TW471113B - An SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOFETs and method of fabricating the same - Google Patents
An SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOFETs and method of fabricating the same Download PDFInfo
- Publication number
- TW471113B TW471113B TW90103360A TW90103360A TW471113B TW 471113 B TW471113 B TW 471113B TW 90103360 A TW90103360 A TW 90103360A TW 90103360 A TW90103360 A TW 90103360A TW 471113 B TW471113 B TW 471113B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- trench
- area
- transistor
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 85
- 238000004519 manufacturing process Methods 0.000 title abstract description 9
- 230000000694 effects Effects 0.000 title description 9
- 238000007667 floating Methods 0.000 title description 4
- 238000002955 isolation Methods 0.000 claims abstract description 59
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 239000002019 doping agent Substances 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 230000002079 cooperative effect Effects 0.000 claims description 5
- 150000004767 nitrides Chemical class 0.000 claims description 2
- 239000012212 insulator Substances 0.000 abstract 1
- 239000007943 implant Substances 0.000 description 8
- 238000009413 insulation Methods 0.000 description 6
- 230000003071 parasitic effect Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 2
- 230000036039 immunity Effects 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 210000000746 body region Anatomy 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 235000012054 meals Nutrition 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78612—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing the kink- or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
- H01L29/78615—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing the kink- or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect with a body contact
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Element Separation (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020000082006A KR100672932B1 (ko) | 2000-12-26 | 2000-12-26 | 실리콘 온 인슐레이터 트랜지스터 및 그 제조방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW471113B true TW471113B (en) | 2002-01-01 |
Family
ID=19703592
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW90103360A TW471113B (en) | 2000-12-26 | 2001-02-15 | An SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOFETs and method of fabricating the same |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2002217420A (ja) |
| KR (1) | KR100672932B1 (ja) |
| DE (1) | DE10107923B4 (ja) |
| TW (1) | TW471113B (ja) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6521959B2 (en) * | 1999-10-25 | 2003-02-18 | Samsung Electronics Co., Ltd. | SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETs and method of fabricating the same |
| JP2002208705A (ja) * | 2001-01-09 | 2002-07-26 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
| JP4154578B2 (ja) | 2002-12-06 | 2008-09-24 | 日本電気株式会社 | 半導体装置及びその製造方法 |
| JP2006237564A (ja) | 2005-01-31 | 2006-09-07 | Renesas Technology Corp | 半導体装置及びその製造方法並びに半導体集積回路 |
| JP5114844B2 (ja) * | 2005-02-14 | 2013-01-09 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5283457A (en) * | 1989-10-02 | 1994-02-01 | Texas Instruments Incorporated | Semiconductor on insulator transistor |
| USH1435H (en) * | 1991-10-21 | 1995-05-02 | Cherne Richard D | SOI CMOS device having body extension for providing sidewall channel stop and bodytie |
| KR970024287A (ko) * | 1995-10-05 | 1997-05-30 | 양승택 | 실리콘-온- 절연체 모스 전계효과 트랜지스터 및 그의 제조방법(Silicon-On-Insulator MOS transistor and fabricating method thereof) |
| JPH10189978A (ja) * | 1996-12-20 | 1998-07-21 | Hitachi Ltd | 半導体集積回路装置 |
| KR100252866B1 (ko) * | 1997-12-13 | 2000-04-15 | 김영환 | 반도체소자 및 이의 제조방법 |
| JPH11233785A (ja) * | 1998-02-17 | 1999-08-27 | Oki Electric Ind Co Ltd | Ｓｏｉｍｏｓｆｅｔおよびその製造方法 |
| JP3410957B2 (ja) * | 1998-03-19 | 2003-05-26 | 株式会社東芝 | 半導体装置及びその製造方法 |
| EP0989613B1 (en) * | 1998-08-29 | 2005-05-04 | International Business Machines Corporation | SOI transistor with body contact and method of forming same |
| JP4540146B2 (ja) * | 1998-12-24 | 2010-09-08 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| KR100372645B1 (ko) * | 2000-06-30 | 2003-02-17 | 주식회사 하이닉스반도체 | 에스오아이 소자의 제조방법 |
-
2000
- 2000-12-26 KR KR1020000082006A patent/KR100672932B1/ko not_active IP Right Cessation
-
2001
- 2001-02-13 DE DE2001107923 patent/DE10107923B4/de not_active Expired - Fee Related
- 2001-02-15 TW TW90103360A patent/TW471113B/zh active
- 2001-02-15 JP JP2001038978A patent/JP2002217420A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JP2002217420A (ja) | 2002-08-02 |
| KR100672932B1 (ko) | 2007-01-23 |
| KR20020052610A (ko) | 2002-07-04 |
| DE10107923A1 (de) | 2002-07-04 |
| DE10107923B4 (de) | 2004-06-03 |
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| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent |