TW469550B - Component and its production method - Google Patents

Component and its production method Download PDF

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Publication number
TW469550B
TW469550B TW089112547A TW89112547A TW469550B TW 469550 B TW469550 B TW 469550B TW 089112547 A TW089112547 A TW 089112547A TW 89112547 A TW89112547 A TW 89112547A TW 469550 B TW469550 B TW 469550B
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Taiwan
Prior art keywords
layer
patent application
item
copper
scope
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TW089112547A
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English (en)
Inventor
Jurgen Ramm
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Unaxis Balzers Ag
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    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
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  • Engineering & Computer Science (AREA)
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  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Description

A7 -9 5 5 Ο "^ --------Β7___ 五、發明說明（/ ) 本發明特別是關於半導體工業之領域且特別是有關〃 組合與封裝（Assembling and Packaging (Α + Ρ))# 之範圍。 當然要強調的是：本發明亦可用在其它技術範圍中， 其中可達成一種至銅表面之連接。 若本發明所依據之問題已針對半導體工業來描述且已 提出一種與此有關之解法，則可理解的是本發明在技術 上並不限於此。同樣問題亦發生在其它技術中，本發明 所建議之解法亦可適用於該處。 在半導體工業中，藉由連結（Bond)或所謂〃導線連結 (WireBondingK來連接各組件（其中至少一個通常是導 線）是很廣泛的，其中各組件之至少一部份是由鋁所構 成。各組件（其中之一是由鋁所構成）之〃導線連結〃 是以習知之以一般大氣來形成之氧化鋁層爲主。爲了達 成一種良好之金屬間之連接（例如 > 鋁和金之間的連接） 以確保電阻儘可能小，具有可再生性，長時間之穩定性， 電性以及機械性上之可靠性，則須加熱各組件到至少80 °C (較佳是更高）以達成此種連接》 但習知方式中就鋁之導電性而言鋁並非第一選擇。 由於銅之導電性較鋁者好很多，因此在給定之電性特 性中電流導電部份可以有較小之大小，特別是晶片上之 金屬導電軌以及導線和其接觸位置可較小，因此在半導 體工業中特別是有較大之需求，以便特別是利用導引電 流之銅組件來使用其電性接觸面，例如在Terrence Thompson, "Copper 1C Interconnect Update'1; HDI, Vol, 2, 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -----^---,-----一^·-------訂---------線J ' (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消f合作社印製 469550 A7 B7____ 五、發明說明（> )
No_ 5，May 1999，p42 中所述者。 銅/金·導線-連結系統中所發生之問題詳述在George. G. Harmann, "Wire Bonding in Microelectronics", McGraw-Hill, 1997，page 138 至 140 中。 在同一文件page 1 7 1中因此描述了 〃爲何鋁之連結較 無問題〃，即由於其.上形成一種硬的易碎之氧化物，其會 由於此種連結而中斷。因此，較軟之氧化物（例如，氧 化銅，氧化鎳）可降低此種可連結性。 基本上由此文件第丨28頁表1-3中"Reversing the Bonded Metallurgical Interface"可推知：硬氧化物在軟性 金屬上可達成上述之連結（Bond)。這與第1 97 98頁上
之實施形式相一致1於是可推知：在連結期間易碎之膜 已裂開且在〃廢料區〃中沖洗1這樣可藉由較厚之各層 來調整出較滿意之超音波連結和熱離子連結。藉由2.5 n m 之C V D方法所沈積之氧化物所可達成之可連結性相較於 純接觸墊之可連結性而言是不會改變的D 總之，就半導體工業而言可以下述方式來進行：在導 電軌中此種由鋁至銅之接面可使晶片更小型化。以銅導 電軌來進行之晶片製程目前佔大部份。只有當（如上所 述）由晶片之銅接觸區至#晶片載體a之間的連結（導 線連結，覆晶技術）須達成時才會發生困難性。相對於 以鋁來形成之氧化鋁（其是硬而薄之阻止氧之層且在一 般溫度進行導線連結期間可防止其下方之金屬不會進一 步被氧化或受污染）而言，氧化銅是軟的且在連結時不 -4- 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） ---丨-------丨·(友--------訂--------線-· (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局貝工消費合作社印製 A7 h6 95 5 Ο _B7 五、發明說明（4 ) 允許突然的斷裂（氧化鋁即會如此斷裂），這樣可達成〜 種無熔劑之焊接式連接’且氧化銅並不會形成一種氧擴 散位障，特別是在連結溫度時不會如此。 本發明之0的是設計一種組件1其具有至少·—種由至 少一種由銅所構成之金屬組件與一種由金屬所構成之第 二組件之間的連接，此種連接在機械上和電性上是無缺 點的，本發明亦提供一種此種組件之製造方法。本發明 之組件之特徵是申請專利範圍第1或第2項之條文所述 者。此種組件之較佳實施形式敘述在申請專利範圍第3 至1 2項中。 此目的在本發明之方法中是以下述方式達成：若要藉 由連結而連接二個銅組件，則此銅組件須設有—·種層> 其在溫度至少是8 0°C時是穩定的且在此種溫度時形成一 種氧擴散位障，其至少類似於一種在正常環境中所形成 之以鋁爲主之氧化鋁層（若未較鋁爲佳時）；且藉由連結 而連接各組件，加熱到至少上述之溫度（依據申請專利 範圍第t 3項）。其它較佳是實施形式亦適用於本發明之 組件。. 經濟部智慧財產局貝工消費合作社印製 依據申請專利範圍第1 4項而設置一種層，其在溫度至 少是1 0 〇 °C時（較佳是至少1 5 0 °C，且更佳是直到至少2 0 0 °C )是穩定的，特別優良之情況是直到至少3 0 0 t時都是 穩定的，其中此種連結題在加熱到至少上述溫度時進行 的。但這並不表示：當此層在較高溫度（例如，3 50°C ) 時亦是穩定的，此種連結可在此種高溫中進行。此種連 -5 - 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐) " ~~ A7 B7 4b^5〇 五、發明說明（4 結絕對可在較低溫度中進行，但至少在8 0 °C中進行，較 佳是至少在1 5 〇 °C中進行，更佳是在至少2 0 0°c中進行。 在其它較佳之實施形式中設置一種層，其相對於機械 性和熱性以及氧擴散特性而言至少類似一種在正常環境 中以鋁爲主而形成之氧化鋁層（若功能未較佳時）》 依據申請專利範圍第1 6項，第二組件同樣至少是由銅 所構成且如上述所設有一種層，或此第二組件較佳是由 金或鋁所構成。 就較佳之使用領域（即，半導體技術）而言，依_ _ 請專利範圍1 7項此組件之至少一部份較佳是由導線m ^ 成且使用〃導線連結"作爲連結。 此外，依據使用領域，設置上述之層作爲導電層$ _ 性隔離層。可完全使用其與此相關之特性，即，使用止匕 層作爲隔離層或導電層。 下述各種材料或其混合物適合作爲上述之層之材料_ ·_ a) SiCK 其中 1.5Sxg2，較佳是 1<χ<2， b) Ta SiN，較佳是 TaxSiyNz，其中 3 5 客 x S 55 1 2 S y S 18 3 2^ z S 48 j x + y + z=100， 特別好之情況是：Ta45Sil5N4〇
c) TiN
d) AlO
e) TiSiN 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） --------.1----^ · -------訂---------線 y . (請7t*間讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消费合作社印製 469550 A7 B7 五、發明說明（r)
f) TaN g) SiN，較佳是 Si3N4 (請先閱讀背面之注意事項再填寫本頁)
h) WS iN
i) ReO
k)PdO
!)ZrO
m) YO
n) ZrN
o) NbN
p) VN q) 其它可能之CuN。 在此處可得出一種重要之事實。在本發明之方法中i 以上述方式在銅組件上設置一種層。此種方式包含一種 層之沈積且需要時須對所沈積之層作事後處理，使所造 成之層是由此種已沈積之作多次事後處理之層所產生。 因此，爲了形成上述之層，須沈積一種較佳是由真空 塗層法所形成之層，例如，藉由一種CVD-，PVD- 1 PEPVD 方法或藉由電漿聚合法而形成。 經濟部智慧財產局員工消费合作社印製 在一種由塗層過程所施加之層和此種考慮一種事後處 理所造成之本發明之層之間是有差別的。 此外，依據所加入之由銅所構成之組件之預塗層在沈 積此層之前來淨化此組件，較佳方式是在氫電漿中或在 氫-氮-電漿中進行處理。 此外，較佳是沈積此層之厚度d成爲至少1 . 5 n m，較佳 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 4 6 9 5 5 0 A7 B7 五、發明說明（左） 是至少2 · 0 n m，d特別是在以下之範圍中： 2.0nmS dg 15nm » 特別是 2.5nm 客 dg 3.5nm。 此層之厚度以下特別是會由於其上所設定之需求而被 限制成氧-擴散位障。相較於以上而言，此種即將設置之 厚度特別會受到此種即將連結之可斷裂性所限制 爲了使所需求之層作爲氧-擴散位障時可最佳化，則須 以X射線非定形（a m 〇 r p h 〇 u s)或以玻璃形式來形成此層。 此種需求亦可決定此種層厚度d之下限，此種餍因此不 必由原子式單層所構成或不再是氧密閉性的。此外，此 種層可由一種具有氧吸收功能之材料所構成。例如，可 由一種化學計量上是欠量（u n d e r)之氧化物（特別是 S i 0 s，X < 2 )所構成。 就以導電性或電性隔離方式形成本發明之層而言，亦 可使用此種由於可連結性而獨立設置之層，其就其在塗 層部份上之可導電性而言可作爲功能層，因此可作爲導 電層或隔離層。 在本發明之方法之其它較佳之實施例中以下述方式設 置上述之層：塗佈一層且此層隨後在氮電漿及/或在正 常大氣中進行處理。此種方式特別適用於塗佈一種由 Si〇2所構成之層，較佳是在一種已淨化之銅表面上進行 且在氮電漿中進行事後處理。較佳是藉由濺鍍而塗佈 Si02 層。 在本發明之方法之上述較佳實施形式中，其中包括一 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (諝先閱讀背面之注意事項再填寫本頁) - I I I I I I I - — — — —111 — ^ 經濟部智慧財產局貝工消费合作社印製 46 95 5 0 a7 __________B7_ 五、發明說明（7 ) f請先閱讀背面之注意事項再填寫本頁) 種層之塗佈及此層之事後處理1則進一步建議：塗佈一 樋由矽所構成之層*較佳是藉由濺鍍和在正常大氣中之 處理來進行事後處理，較佳是一種加熱方法。 此外，在上述較佳方法（即，層之塗佈和事後處理） 中，塗佈一種金屬層且隨後進行一種氧化作用。其較佳 方式是：在氧化期間#由適當地選取所塗佈之層厚度及 /或氧化時之溫度及/或大氣之適當之選取來控制此氧 化過程。 較佳是選取此種所施加之已氧化之層之厚度d，使 3nm^ ]〇nm » 較佳是： 4nmSd芸nm 且在正常大氣時之氧化可在加熱情況下進行》 本發下例如依據圖式來詳述。圖式簡單說明如下： m 1 加一種1 β m厚之以電解液來塗佈之銅層或施 一一 人. 加一種n m厚之已職鍍之銅層時由本發明所設置之 S i〇2層結區之厚度和剪力強度之關係圖》 第2 種設置在本發明之組件上之連結方式》 經濟部智慧財產局貝工消費合作社印製 以銅塗佈之晶圓作爲原始基板。使用一種厚度是介於 5 0 0 n m和1 0 0 0 n m之間的銅層。 500nm厚之薄的銅層藉由濺鍍法塗佈而成，其是以較 濃之電解液沈積而成。在一些實驗中在氫電漿中進行銅 表面之淨化。似此種表面之淨化不會使剪力強度較晶圓 者還大，其中在相同之塗層言不須進行淨化》此外，在 實驗中不須一種預先進行之淨化過程。當然亦須考慮： -9- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 46 95 5 0 A7 ---- B7 五、發明說明（β ) 在生產條件時銅表面會受到儘可能不同之環境條件，且 在獨立地沈積本發明之層之前預先進行上述之淨化步驟 是最有利的，以便在每一情況下達成各塗層所需之相同 之起始條件。 可設有許多具有不同層厚度之不同材料且分別在不同 連結溫度時連結1 . 0 m i 1直徑之金導線。 -----：—.-----(!·-------訂---------線 j (請先間讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中囤國家標準（CNS)A4規格（210 X 297公釐〉 經濟部智慧財產局員工消費合作社印製 46 95 5 0 A7 _B7 五、發明說明（9 )
卜 W ε c Ξ c ΓΟ > > 〇 T#· £ c 卜 £ c > > 〇 ^ z E c： r~- Ξ c rn > 1 1 (N 9 - a ^ E a r- E G rn > 1 1 *=r γ*Ί 'T S·^ CO ε c 卜 > B a > > .¾ S ε c r~- B c m > 1 i q S C/} ε c 卜 ε c 0^1 > > 1 1 rv 〇 二 Ιλ w ε £ 卜 > > ε c > > m 盤 τ: o 寸 P o 〇 <N ---------,-----一農--------訂---------線J (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 4 S 9 5 5 Ο A7 一 B7 五、發明說明（α) 表1顯示8個所設定之硬層材料N 〇 . 1至N 0.8之結果， 其分別在二個層厚度和二種連結溫度4 (TC和2 Ο Ο X：時所 進行者。明顯的是在連結溫度2〇〇艺時（由於上述原因這 種溫度是所力求的）只有Si02 ' Si3N4或Ta45Sii5N4。和 TiN可造成可連結性。顯然在3 llm範圍中之層厚度所具 有之連結性較層厚度更大時還好。在溫度小於6 〇 t時（其 中銅氧化作用已不重要）只顯示此種與其厚度d有關之 層硬度：此層因此不必太厚，這是因爲其在導線連結時 不會中斷D在大於8 0 °C之較高溫時會產生軟的油污性氣 化銅，因此不再足以形成厚度相同之裸露之易裂的硬 層。此種層在連結溫度時必須有效地防止銅之氧化。於 是，在較高溫度時本發明所施加之層之作爲氧-擴散位障 之作用會漸漸變得重要。表2中顯示此種依據表1之n 〇. 1 至N ◦. 8之層所用之沈積過程及主要之製程條件。 -----：---.-----一' 义 -------訂---------線-J (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 -12- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 4 ο 5 5 9 6 A7B7 經濟部智慧財產局貝工消費合作社印製 五、發明說明（"） 表2 號碼 ⑴ 藉由濺鍍之塗佈 矽-靶，Ar/02-混合物 3 X 1 (Γ3毫巴 (2) 電漿聚合法 Si(CH3)2(OC2H5)2, 10·2 毫巴 (3) 藉由濺鍍之塗佈 矽-靶，Ar/N2-混合物 1〇_2毫巴 (4) 離子電漿 Si-蒸發，Αγ/Ν2-混合物 5x1 〇_3毫巴 (5) 藉由濺鍍之塗佈 鉻-靶，Ar/02-混合物 5x 1 0-3毫巴 (6) 藉由濺鍍之塗佈 鈮-靶，Ar/02-混合物 4 X I 0 -3毫巴 (7) 藉由濺鍍之塗佈 鉅-矽-靶，Ar/02-混合物 5x 1 (Γ3毫巴 (8) 離子電漿 鈦-靶，Ar/N2-混合物 5xl0_3毫巴 表3 硬層 厚度d/nm 排放力/ g 號碼 S 1〇2 7 17.46 (1) Ta4.5Si2.5N3 3 14.7 (7) s i 3 N 4 3 14.2 (4) -13- (請先閲讀背面之注意事項再填寫本頁) ^\ In (f I I i n 線t 本紙張尺度適用中國國家標準（CNS)A4規格（2〗0 X 297公釐） 經濟部智慧財產局ΒΚ工消費合作社印製 A7 B7 五、發明說明（/) 然後利用層N 〇 1 ' 4和7依據表1對已完成連結之連 接區作排放測試。 由這些結果可知：只有每一層都具有良好之機械特 性，則在所使用之連結溫度（其每—情況都超過8 〇 °C， 所示之情況是2 0 0 °C )時這些層才是穩定的。適當之方式 主要是各層是非晶形穩定的（晶體大小g 3 n m之X射線 非晶形）且在上述溫度時較佳是直至3 0 0 °C時仍保持穩 定。除表1之編號]、4' 7' 8之材料之外，TiN，其 匕之S i Ο x (化學計裏上是欠量之氧化砂）、氧化銘（較佳 是化學計量上是欠量的）、TiSiN、TaN、WSiN、ReO、PdO、 Ζι·〇、Y〇、ZrN、NbN、VN，可能時亦包括（：…都屬這些 材料。 藉由使用化學計量上是欠量之S i 0 2或基本上使用一種 具有氧吸收作用之材料（例如，化學計量上是欠量之氧 化物）’則此種層材料之作用可提高成氧-擴散位障之用。 表3中是依據Μ ο · 1、7和4之實驗而形成之連結區之 剪力強度。 第1圖是在一種Si02層之所塗佈之功能中在溫度200 °C進行連結時所造成之剪力強度對此種層厚度d之關 係，所施加之銅層是lOOOnm和500nm厚。很明顯的是： 在硬層之較小之厚度中已知所造成之連結是最佳化的且 與d之變動及銅層厚度之變動無關。 在已淨化之銅金屬層上施加已濺鍍之SiO;層直至U0 °C而達成一種有效之擴散位障。若上述之s i 〇 2層事後另 -1 4- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） --------：-----^^--------訂---------線 γ (請先閱讀背面之注意事項再填寫本頁) ,-6 95 5 0 A7 _________ B7 五、發明說明（θ ) 外在氮電漿中處理，則直至大約2 5 0 °C時可產生一種擴散 位障作用》 在銅金屬層上就已濺鍍之矽層而言，隨後在正常大氣 時在所施加之層之高熱過程中直至大約2 0 0°C時達成一 種擴散位障作用。 若此銅表面塗佈一稀薄的金屬層（例如，由A丨' S i、 C r等所構成）且此層在大氣中可在加熱時進行氧化作 用’則可形成一種密的擴散位障以阻擋銅之氧化。此種 層須夠薄，使其可完全被氧化且不會殘留其餘之金屬， 以便以此銅達成一種金屬間之連接，這可在金屬性之層 厚度是3nm至i〇nm時達成，較佳是4nm至6nm。 第2圖中顯示-種在本發明之組件上之連結區，其中 顯示： 1 : 一個基板 2 : —種至少主要是由銅所構成之層， 3 : —種由金屬間之連接件所形成之以銅層2而相連接 之其它4個部份（特別是導線）。 5 :在>Γτ設置之連結區中此種由連結過程所中斷之本發 明之硬層。 此外，利用本發明亦可使用現有之標準設備來作導線 連結，以便使用銅技術於晶片製造中。這種設備亦可在 連結溫度大於8 0 0 °C時工作。 符號說明 d…層厚度 本紙張尺度適用中國國家標準（CNS>A4規格（210 X 297公釐） -----———；-----一1 (請先閱讀背面之注意事項再填寫本頁) ϋ II < If n 經濟部智慧財產局員工消費合作社印製 4,6 9 5 5 Ο Α7 _Β7 五、發明說明（1斗） 件 接 連 之 間 板層屬 基銅金 .—- 2 3 層 硬 5 --------^-----'---------訂---------線·™'· (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局具工消費合作社印製 6 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）

Claims (1)

  1. 409550 ___ 補充丨 六、申請專刹範圍 第8 9 1 1 2 5 4 7號「電子元件及其製造方法」專利案 (90年9月修正） Λ申請專利範圍 丄._ ·種電了'元件’其包括：一種由銅所構成之第一組件； 一種第二金屬組件，其是藉由金屬間之連接之而與第.-組件相連接，此種電子元件之特徵爲：在此種連接之周 圍區域中此種由銅所構成之組件具有一種硬層，其在至 少80t之溫度時是穩定的且在此種溫度時形成一種氧-擴 散位障，至少類似於一種在正常環境時所形成之以鋁爲 .主之氧化錦層（若未較優良時）。 2. —種電+元件，其包括至少…個銅導電軌以及至少一個 可與此銅導電軌相接觸之連接線，其特徵爲：此連接線 和導電軌之間的連接是以金屬作爲中介而達成的。 3. 如申請專利範圍第1項之電子元件，其中由銅所構成之 第-…組件是銅導電軌且第二金屬組件是接觸此銅導電軌 所用之連接線，其中銅導電軌和連接線之間之連接是以 金屬作爲中介而達成的。 4. 如申請專利範圍第1或第3項之電子元件，其中此硬層 在上述區域中在溫度至少1〇〇。，較佳是至少15CTC或至 少至20(TC時是穩定的，特別的好情況是至少至300°C時 是穩定的。 5. 如申請專利範圍第1或第3項之電子元件，其中此硬層 至少相對於機械性和熱性以及相對於氧-擴散特性而言在 作用上至少近似於在正常環境時以鋁爲主而形成之氧化 * 469b* 1--- 補充 --==!==^ae«»^J 六、申請專利範圍 鋁層（若在作用上此硬層未較氣化鋁層更佳時）。 如申請專利範園第1或第3項之電子元件，'其中第.二組 件至少是由銅、金或鋁所構成。 7. 如申請專利範圍第丨或第3項之電子元件，其中較佳是 由銅所構成之此部份是一種晶片之接觸墊，第二部份是 導線。 8. 如申請專利範圍第1或第3項之電子元件，其中此層是 導電性的或電性絕緣的且就其導電性而言較佳是另外用 作此組件上之功能層。 9. 如中請專利範圍第1或第3項之電子元件，其中此層是 由至少'.種材料所構成，較佳是由下述材料之一所構成： a) SiOx，1.5 刍X 刍 2，較佳足 X < 2， b) TaSiN，較佳是 TaxSiyNz，其中 3 5 ^ X ^ 5 5 12^y ^ 18 3 2 客 zS48，X + y + z= 100， 特別好之情況是：Ta45Si15N40 c) TiN d) A10 e) TiSiN f) TaN g) S i N ’較佳是S丨3 N 4 h) WSiN i)ReO 六、申請專利範圍 k)PdO DZrO m) Y〇 n) ZrN 〇)NbN ρ) VN q)可能時亦可用之CuN。 10_如申請專利範「割第1或第3項之電子元件，其中在此區 域中結合氫及/或氮。 1丄·如申請專利範圍第1或第3項之電子元件，其中此層是X 射線非晶形的或玻璃形式的。 12·如申請專利範圍笫I或第3項之電子元件，其中此層具 有厚度d，其値是： d 2 1.5nm，較佳是 d22nm，更佳是 2.0nmSd客lOnm，特別好之情況是 2.5nm$d 芸 3.5nm。 Π —種電子元件之製造方法，此種電子元件包括：至少一 個由銅所構成之第一金屬組件之至少一種連結區；一種 由金屬所構成之第二組件，本方法之特徵爲··此種銅組 件設有.一種層，其在溫度至少80°C時是穩定的且其在此 溫度時形成一種氧-擴散位障’其至少類似於在正常環境 下所形成之以鋁爲主之氧化錦層（若此種層未較此氧化 鋁層更好時），且在加熱到至少上述溫度時使這些組件藉 4 6 9 5 5 0 修正 補充 六、申請專利範圍 由連結而相連接。 14. 如申請專利範圍第〗3項之方法，其中設有種層，其在 溫度至少1 00°C時，較佳是至少1 50°C或至少至20(TC時’ 特別好之情況是至少至300°C時是穩定的° 15. 如中請專利範圍第丨3項之方法，其中設有一種層，其就 機械性和熱性以及氧-擴散特性而言至少在作用上類似於 正常環境時以鋁爲主而形成之氧化鋁層（若此種層在作 用上未較此氧化鋁層更好時）。 1&如申請專利範圍第1 3項之方法，其中這&組件之第.：部 份至少是由銅或金或鋁所構成。 丄7如申請專利範圍笫13項之力法，其中這些組件之至少--部份是導線且此種連結是一種導線連結。 18.如申請專利範圍第1 3項之方法，其中設有一種導電層或 電性隔離層作爲該層。 Η如申請專利範圍第1 3項之方法，其中該層由至少一種材 料所構成，較佳是由以下各材料之一所構成： a) Si〇x，1.5‘xS2，較佳是 χ<2， b) TaSiN，較佳是 TaxSiyNz，其中 35 ^x^55 12^y ^ 18 3 2 ^ z ^ 4 8 ' x + y + z二100， 特別好之情況是：Ta45S】l5N4。 c) TiN d) A10 -4 - 4 6 9 5 5 0 x. ?的-h 3 > 瓜_ 補充_ 六、申請專利範圍 e) TiSiN f) TaN g) SiN，較佳是 Si3N4 h) WSiN i) ReO k) PdO l) ZrO m) Y〇 n) ZrN o) NbN p) VN q) 可能時亦可用C u N。 20. 如申請專利範圍第1 3項之方法，其中藉由真空塗層方法 塗佈…層以設置該層。 21. 如申請專利範圍第13項之方法，其中須淨化此組件，較 佳是藉由氫電漿中之處理或氮-氫-電漿中之處理來進行， 然後形成上述之層。 22. 如申請專利範圍第1 3項之方法，其中設置此種厚度d至 少是1.5nm之層，較佳是至少2.0nm，更佳之範圍是： 2.0nmSd^l0nm ' 特別好之範圍是： 2.5nmSdS3.5nm。 23. 如申請專利範圍第1 3項之方法，其中以X射線非晶形或 玻璃形式設置該層。 469550 %年〒月$ u r.nfi 六、申請專利範圍 汉如申請專利範圍第〗3項之方法，其中此褪層树料具有一 種氧-吸收作用’較佳是π冇…種在化學計量上是欠量比 値（r a t i 〇)之氣。 25·如中請専利範圆笫丨3項之方法，其中設有該層，其過程 是塗佈一層且此層是在氮爾漿中及/或在正常大氣中作 事後處理。 26如申淑專利範圃第2 5項Z方法，其中塗佈一種由ς丨〇2所 構成之層’較佳是塗佈在已淨化之銅表面上且在氮電紫 中作事後處理。 27如申請專利範圍第2 6項之方法，其中藉由濺鍍法而施加 Si02 層。 28.如申請專利範圍第2 5項之方法，K中塗佈一種由矽所構 成之層’較佳是藉由濺鍍法來進行且藉由熱處理而在正 常大氣中進行事後處理。 2¾如申請專利範圍第2 5項之方法，其中施加….種金屬層且 隨後使其被氧化。 30. 如申請專利範圍第29項之方法，其中該氧化作用是藉由 選取 •所塗佈之層厚度 •氧化時之溫度 •氧化期間之大氣 來進行控制。 31. 如申請專利範圍第30項之方法，其中此層所被塗佈之厚 度d是： -6 - 469550 _ 衲充 t、申請專利範圍 3 n m S d S 1 0 n m，較佳是 4nm^d^6nm 且此種氧化足在ιΗ常大氣中進行。
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CN1365517A (zh) 2002-08-21
WO2001001478A1 (de) 2001-01-04
KR100863388B1 (ko) 2008-10-13
US6916739B2 (en) 2005-07-12
CA2377628A1 (en) 2001-01-04
HK1048889A1 (zh) 2003-04-17
US20040087150A1 (en) 2004-05-06
AU5057600A (en) 2001-01-31
KR20020019479A (ko) 2002-03-12
EP1190446A1 (de) 2002-03-27

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