CN1365517A - 部件及其制造方法 - Google Patents

部件及其制造方法 Download PDF

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Publication number
CN1365517A
CN1365517A CN00809564A CN00809564A CN1365517A CN 1365517 A CN1365517 A CN 1365517A CN 00809564 A CN00809564 A CN 00809564A CN 00809564 A CN00809564 A CN 00809564A CN 1365517 A CN1365517 A CN 1365517A
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China
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layer
preferred
parts
copper
under
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Granted
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CN00809564A
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CN1199254C (zh
Inventor
J·拉姆
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Inficon GmbH
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Unaxis Balzers AG
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Abstract

本发明涉及一种部件及其制造方法,该部件的基片(1)有基本上由铜构成的层(2)。金属丝(3)通过压焊和形成金属间化合物与铜层(2)连接,而且在基本上由铜构成的层(2)上涂敷的硬层(5)在连接区裂开。该硬层至少在80℃的温度下是稳定的,在此温度下起氧扩散阻挡层的作用,其作用接近标准环境下在铝上形成的氧化铝层。

Description

部件及其制造方法
本发明尤其涉及半导体工业领域并且特别涉及其中的装配和组装“(Assembling and Packaging)(A+P)”部份。
当然，应该着重指出，本发明亦可应用于其它技术领域，其中希望在铜表面上实现电压焊连接。
因此如果本发明的起因问题是半导体工业并提出其相关的解决办法，则应该理解它在技术上并不受限制。该问题本身完全可出现在其它的技术中，所建议的解决途径亦可在那里应用。
在半导体工业中广泛通过压焊或所谓的“引线压焊”连接零件，通常是金属丝，而且至少是由铝构成的零件。由铝构成的零件的“引线压焊”受限于众所周知的在标准气氛中形成的氧化铝层。为了建立良好的金属间的连接，例如在铝和金之间的连接，来确保尽可能小电阻及可再现的、长时间稳定的、电和力学上可靠的连接必需将零件加热至至少80℃，优选更高的温度。
众所周知，铝由于其电导性并不是第一选择的金属。
由于铜高得多的电导性，以及随之在给定电状态下可能的较小的导电零件，特别是芯片上的金属印制电路、以及金属丝及接触点等，特别在半导体工业中迫切需要采用与导电的铜零件连接的电接头，如Terrence Thompson，“Copper IC Interconnect Uptdate”铜集成电路互连的新改进，HDT，2卷，5期1999年5月，第42页所述。
例如在铜/金-引线压焊体系中出现的问题，在George G.Harmann，“Wire Bonding in Microelectronics”，(微电子学中的引线连接)McGraw-Hill，1997，138-140页中已有阐述。
在同一文献的171页上说明了为什么铝的连接比较无问题，即由于在其中生成一种硬的易脆的氧化物层，该层通过连接裂开。与此相反，软的氧化物，例如铜的氧化物和镍的氧化物降低了可连接性。
原则上从该文献的128页，表I-3“改变连接的金属界面”可以看出，软金属上的硬氧化物使连接变得容易。这点与197，198页上的叙述相符，根据这点，在联接期间，易脆膜裂开并在“脱落区”经冲洗，从而允许通过较厚的层完成满意的超声连接和热离子连接。与清洁焊点的连接能力相比，通过2.5nm CVD-涂复的氧化物的连接能力没有差别。
概括地从有关半导体工业的叙述可以看出，铝和铜的接头可使芯片进一步小型化。带铜印制电路的芯片的制造方法被受限。困难首先出现于，如上所述，应该实现芯片铜接触点与“芯片载体”的压焊连接(引线压焊，倒装技术)。在铝上形成的氧化铝是一种硬的、薄的阻氧层，该层在引线压焊期间的普通温度下保护层下面的金属不进一步氧化或沾污，与此相反，氧化铜是软的，它既不能在压焊时如氧化铝那样立即裂开，以完成无熔剂的焊接或钎焊，又不能尤其在压焊温度下形成阻止氧扩散的层。
本发明的目的在于提供一种部件，该部件具有至少一个由至少是基本上由铜组成的金属零件与由金属组成的第二个零件的连接，该连接在机械与电方面上是无可置疑的，本发明的目的还在于提供一种制造这种部件的方法。本发明部件的特征由权利要求1或2表征。这种部件的优选实施方案专述于权利要求3-12。
该目的通过本发明的方法实现，即在拟通过压焊连接的铜零件假设两个铜零件上涂复一种层，该层至少在80℃的温度下是稳定的并且它还在此温度下形成一种阻止氧扩散的阻挡层，如果不优于也至少接近在标准环境下在铝上形成的氧化铝层，并且按照权利要求13在加热至至少所提及的温度下通过压焊使零件连接。另一些优选实施方案，按其含义亦适用于本发明的部件。
按照权利要求14，为此采用一种层，该层宜在至少100℃的温度下，优选至少在150℃下，优选直到至少200℃下是稳定的，尤其优选直到至少300℃下，而且在加热至至少预期的温度下进行压焊。但这并不意味如果该层亦在更高的温度下，例如350℃是稳定的，压焊亦在此温度下进行。压焊完全可在较低的温度下进行，但至少在80℃，应至少在150℃，更优选至少在200℃。
在另一优选实施方案中，采用一种层，该层在机械和热性质方面以及在对氧一扩散行为方面如不比在标准环境下在铝上形成的氧化铝层更好的话，也接近或相等。
在这种情况下，按照权利要求16，第二个零件同样至少基本上可由铜组成，而且相应地如上所述涂敷一种层，或者优选基本上由金或铝组成。
至于优选的应用领域，即半导体技术，按照权利要求17优选是零件中的至少一个由金属丝构成，并用作“引线压焊”。
其次，根据应用领域，所述的层以导电层或以电绝缘层提供，其有关的性质可以得到充分利用，即将该层用作绝缘层或导电层。
下述的材料或其混合物适宜作上述层的材料：a)SiOx，其中1.5≤x≤2，优选x＜2，b)TaSiN，优选TaxSiyNz，其中
      35≤x≤55
      12≤y≤18
      32≤z≤48，并且x+y+z＝100，尤其优选Ta45Si15N40c)TiNd)AlOe)TiSiNf)TaNg)SiN，优选Si3N4h)WSiNI)ReOk)PdOl)ZrOm)YOn)ZrNo)NbNp)VNq)有时采用CuN。
在此应指出实质性的实情，在本发明方法的范围内，如上所述，在一个或多个铜零件上采用一种层。这种考虑包括层的涂敷和需要时此涂层的后处理，这样得到的层是经涂敷和加上后处理的层产生的。
据此，上述所考虑的层宜用真空涂层方法涂敷，例如用CVD方法、PVD方法、PECVD方法、PEPVD方法或者用等离子体聚合方法。
需要时应该区分用涂敷过程涂上的层和附加考虑后处理而得到的本发明拟采用层。
再次，根据有关的基本上由铜构成的零件的历程，建议在涂层之前清洗零件，而且优选通过在氢等离子体或在氢-氮-等离子体中进行处理。
再次，层的厚度d至少为1.5nm，优选至少2.0nm，尤其是在下述范围内：
2.0nm≤d≤15nm，其中尤其是
2.5nm≤d≤3.5nm。
下面，层的厚度尤其受到其上作为氧-扩散阻挡层的要求的限制。与上面的叙述相反，拟采用的厚度特别受到对拟压焊的可裂开性的限制。
为了优化该层作为氧-扩散阻挡层的作用，另外建议，层的结构是伦琴无定型的或玻璃状的。该要求决定了层厚d的下限，因此它不可由原子单层构成，或者不再是氧致密的。其次，层可由有氧-吸收剂作用的材料构成，例如由欠化学式计量的氧化物，尤其是由x＜2的SiOx构成。
考虑到本发明拟采用的层是导电的或电绝缘的结构，亦存在着这种可能性，即使这种本来由可压焊性而考虑的层也可从涂敷零件的电导性方面用作功能层，即作为电导层或绝缘层。
在本发明方法的另一优选实施方案中，上述的层可以下述方式提供、即涂复一种层，此层然后通过在氮等离子体和/或通过在标准气氛下的后处理。这种过程尤其适宜于涂敷SiO2层，优选涂敷在清洗后的铜表面上，而且后处理预计采用氮等离子体。优选通过溅射涂敷该SiO2层。
在上述本发明方法的一个优选实施方案的范围内，其中拟采用的层包括层的涂敷和层的后处理，还建议涂敷Si层，再又优选通过溅射，并通过在标准气氛下进行的后处理，优选热处理。
其次，在上述优选的实施方案的范围内，即层的涂敷和后处理，建议涂复金属层，然后将其充分氧化。实现这个过程的优选方式是，在此过程中通过对涂敷层厚和/或氧化温度和/或氧化期间的气氛的相应选择控制该充分氧化过程。
在这种情况下，涂敷和充分氧化后的层厚d优选为：
   3nm≤d≤10nm，更优选
   4nm≤d≤6nm而且在标准气氛下的完全氧化有时在加热下进行。
本发明将在下面用试验及其结果作例以及根据附图加以实例性阐明。
附图1表示本发明的压焊连接的层厚与可拉性的关系，该结合采用SiO2-层涂敷在1μm厚的电解涂敷的铜层上或涂敷在500nm厚的溅射的铜层上，和
附图2表示在本发明部件上的压焊连接。
作为试验的原始基片采用涂敷铜的晶片。采用的铜层厚度为500nm和1000nm。
500nm范围内的较薄的铜层，藉助溅射涂敷，较厚的则采用电解沉积。在某些试验中铜表面在氢等离子体中进行净化。但是结果表明，该表面净化与具有相同的层，但未进行任何净化的晶片相比并未导致可拉伸性的提高。
因此预先采用净化的必要性未被试验证明。当然应该考虑，在生产条件下铜表面要经受不同环境条件，最可能完全有利的是在沉积本发明层之前，预先进行上面提及的净化工序，以便总在相同的初始条件下进行涂敷。
曾经对不同层厚的多种不同材料进行研究，每次在不同的压焊连接温度下对直径为1.0mil的金丝进行连接。表1层(厚度nm)
Nr.    SiO2(1)   SiO(H)(2)   SiN(H)(3)    Si3N4(4)    CrO2(5)    Nb2O5(5)    Ta45Si15N40(7)    TiN(8)
   d 3nm   7nm 3nm   7nm  3nm  7nm 3nm   7nm 3nm   7nm 3nm   7nm  3nm        7nm 3nm    7nm
  40℃ V     V V     V  V    (V) V     (V) V     (V) V     (V) V           (V) V      (V)
  200℃ V     V -     - -      -  V     V -     - -      -  V          (V) V      (V)
V…可压焊                               (V)…有限的可压焊                       -…不可压焊
表1列出了八种硬层材料Nr.1-Nr.8的结果，每种为两种厚度，压焊试验温度为40℃和200℃。可以看出，在压焊温度为200℃时，该温度由于上面所述的原因是要力求达到的，在这种情况下SiO2，Si3N4，或Ta45Si15N40和TiN具有可压焊的能力。还可看出，在3nm范围内的层厚的可压焊性比较大层厚的情况要好。在铜的氧化不起任何作用的60℃温度以下，只表明连接中层的硬度与其厚度有决定性的作用：在这种情况下，层不能太厚，因为否则它在引线压焊时不能完全裂开。在温度高于80℃时出现软的、油污的氧化铜，它不再符合相应于只是脆的硬层的厚度。层应该有效地防止铜在压焊温度下的氧化，因此，在较高温度下，按本发明涂敷的层作为氧-扩散阻挡层的作用更为重要。在表2中列出了表1的层Nr.1-8的沉积方法和重要的工艺条件。表2
  Nr.
  (1) 溅射涂敷 Si-靶，Ar/O2-混合物3×10-3mbar
  (2) 等离子体聚合 二甲基二乙氧基-硅烷Si(CH3)2(OC2H5)2，10-2mbar
  (3) 溅射涂敷 Si-靶，Ar/N2-混合物10-2mbar
  (4) 离子镀 Si-蒸汽，Ar/N2-混合物5×10-3mbar
  (5) 溅射涂敷 Cr-靶，Ar/O2-混合物5×10-3mbar
  (6) 溅射涂敷 Nb-靶，Ar/O2-混合物4×10-3mbar
  (7) 溅射涂敷 Ta-Si-靶，Ar/N2-混合物5×10-3mbar
  (8) 离子镀 Ti-蒸汽，Ar/N2-混合物5×10-3mbar
表3
    硬层     厚度d/nm     拉伸力/g     Nr.
    SiO2     7     17.46     (1)
    Ta4.5Si2.5N3     3     14.7     (7)
    Si3N4     3     14.2     (4)
下面对成功压焊的表1的层Nr1、4和7进行拉伸试验。
从结果可以看出，只有在所采用的压焊温度总是高于80℃，如列出的200℃下是稳定的那些层具有良好的机械行为。首先是稳定的无定形的(伦琴无定形，晶粒尺寸≤3nm)并在上述温度下，甚至到300℃下仍保持稳定的层是适宜的。这类材料包括表1的Nr.1、4、7、8和TiN，以及SiOx(欠化学式量的硅氧化物)、氧化铝(优选欠化学式量的)、TiSiN、TaN、WSiN、ReO、PbO、ZrO、YO、ZrN、NbN、VN、亦可能包括CuN。
通过采用欠化学式量的SiOx或一种基本上具有氧-吸收剂作用的材料，例如一种欠化学式量的氧化物，可以提高层材料作为氧-扩散阻挡层的作用。
表3列出了由试验Nr.1，4，7所得的压焊连接所得的可拉伸性。
图1是一种SiO2一层的涂敷层厚d与所得可拉伸性的函数关系，压焊在200℃的温度下进行，一铜层为1000nm，一铜层为500nm。可以看出，在硬层层厚小的情况下，所得压焊连接明显优化，而且在实质上与d的变化和铜层厚度无关。
通过在净化后的铜敷金属上溅射涂敷SiO2-层可以制造在约达180℃下有效的扩散阻挡层。如果上述SiO2层然后补充在氮等离子体中处理，结果可得到在约达250℃下有效的扩散阻挡层。
对于铜敷金属上溅射的Si层而言，接着将涂复的层在标准气氛中加高温，则其扩散阻挡层作用可达到200℃。
如果铜表面涂敷一种薄的金属层，例如Al、Si、Cr等，然后在大气中需要时加热以充分氧化，与铜的氧化相比可得到一种致密的扩散阻挡层。在这种情况下形成的层足够薄，致使它能充分被氧化，而不残留任何金属，以与铜形成金属间的结合。这在金属层厚为3nm-10nm的情况下可以达到，并且优选4nm-6nm。
图2表示本发明的部件上的压焊连接区，其中：
1：基片；
2：至少主要由铜构成的层；
3：通过在4处与铜层2压焊和形成金属间化合物而连接上的另一零件，尤其是金属丝；
5：在进行压焊区通过压焊过程裂开的本发明拟采用的硬层。
此外，本发明亦可利用现有的为铜工艺，例如在芯片制造中，提供用于引线压焊的标准设备。此设备在这高于80℃的压焊温度下工作。

Claims (31)

1.一种包括基本上由铜构成的零件以及第二金属零件的电子部件，两部件之间通过形成金属间化合物连接，其特征在于，在基本由铜构成的零件的连接的周围区存在一硬层，该层在至少80℃的温度下是稳定的，并在该温度下形成氧-扩散阻挡层，如果不优于也至少接近在标准环境下在铝上形成的氧化铝层。
2.一种包括至少一个铜印制电路及至少一种与铜印制电路接触的连接金属丝的部件，其特征在于，该金属丝和印制电路的连接是金属间的。
3.权利要求1和2的部件。
4.权利要求1或3的部件，其特征在于，在上述区的硬层至少在100℃，优选至少150℃，优选达至少200℃的温度下是稳定的，尤其优选达至少300℃是稳定的。
5.权利要求1，3或4中之一的部件，其特征在于，该硬层至少在机械和热性质以及在氧扩散行为方面如果不优于也至少接近一种在标准环境下在铝上形成的氧化铝层。
6.权利要求1、3-5中之一的部件，其特征在于，该第二零件至少基本上由铜，优选由金或铝构成。
7.权利要求1、3-6中之一的部件，其特征在于，该一个零件，优选基本上由铜构成的那一个为芯片的焊盘，该第二个零件为金属丝。
8.权利要求1、3-7中之一的部件，其特征在于，该层是电导的或电绝缘的，而且优选在其电导性方面还用作为该零件的功能层。
9.权利要求1、3-8中之一的部件，其特征在于，该层由至少一种，优选由下列材料之一构成：
a)SiOx，其中1.5≤x≤2，优选x＜2，
b)TaSiN，优选TaxSiyNz，其中
35≤x≤55
12≤y≤18
32≤z≤48，而且x+y+z＝100，
尤其优选Ta45Si15N40
c)TiN
d)AlO
e)TiSiN
f)TaN
g)SiN，优选Si3N4
h)WSiN
i)ReO
k)PdO
1)ZrO
m)YO
n)ZrN
o)NbN
p)VN
q)亦可能CuN。
10.权利要求1、3-9中之一的部件，其特征在于，在连接区内有氢和/或氮连接。
11.权利要求1、3-10中之一的部件，其特征在于，该层是伦琴无定形的或玻璃状的。
12.权利要求1、3-11中之一的部件，其特征在于，该层的厚度d宜为：
     d≥1.5nm，
优选  d≥2nm，
更优选  2.0≤d≤10nm，
特别优选  2.5≤d≤3.5nm。
13.一种制造部件的方法，该部件至少包括压焊连接以将至少基本上由铜构成的第一金属零件和由金属构成的第二零件连接，其特征在于，该一个或多个铜零件涂有涂层，该层在至少80℃的温度下是稳定的，而且该层在此温度下形成氧扩散阻挡层，如果不优于也至少接近标准环境下在铝上形成的氧化铝层，其特征在于该零件在至少加热到上面提及的温度下藉助压焊连接。
14.权利要求13的方法，其特征在于，涂以涂层，该层在至少100℃下，优选至少150℃下，优选达至少200℃，尤其优选达至少300℃的温度下是稳定的。
15.权利要求13或14之一的方法，其特征在于，拟采用的层在机械和热性质方面以及在氧-扩散行为方面，如果不优于也至少接近于在标准环境中在铝上形成的氧化铝层。
16.权利要求13-15中之一的方法，其特征在于，该第二零件至少基本上由铜或优选由金或铝构成。
17.权利要求13-16中之一的方法，其特征在于，至少一个零件为金属丝，而以压焊连接。
18.权利要求13-17中之一的方法，其特征在于，采用电导层或电绝缘层作为涂层。
19.权利要求13-18中之一的方法，其特征在于，该层由至少一种，优选由下列材料之一种构成：
a)SiOx，其中1.5≤x≤2，优选x＜2，
b)TaSiN，优选TaxSiyNz，其中
35≤x≤55
12≤y≤18
32≤z≤40，而且x+y+z＝100，尤其优选Ta45Si15N40
c)TiN
d)AlO
e)TiSiN
f)TaN
g)SiN，优选Si3N4
h)WSiN
i)ReO
k)PdO
1)ZrO
m)YO
n)ZrN
o)NbN
p)VN
q)亦可能CuN。
20.权利要求13-19中之一的方法，其特征在于，通过真空涂敷方法涂以拟采用的层。
21.权利要求13-20中之一的方法，其特征在于，对零件进行净化，优选通过在氢等离子体中或者在氮-氢-等离子体中净化，然后涂敷该层。
22.权利要求13-21中之一的方法，其特征在于，层的厚度至少为1.5nm，优选至少2.0nm，更优选的范围为
     2.0nm≤d≤10nm尤其优选的范围为
     2.5nm≤d≤3.5nm。
23.权利要求13-22中之一的方法，其特征在于，该层是伦琴无定形或者玻璃状的。
24.权利要求13-23中之一的方法，其特征在于，该层材料具有氧吸收剂的作用，而且优选氧呈欠化学式量的比例。
25.权利要求13-24中之一的方法，其特征在于，采用的层，在涂敷后通过在氮等离子体中处理和/或在标准气氛中的处理。
26.权利要求25的方法，其特征在于，涂敷由SiO2构成的层，优选涂敷在净化过的铜表面上，并在氮的等离子体中进行后处理。
27.权利要求26的方法，其特征在于，SiO2层通过溅射涂敷。
28.权利要求25的方法，其特征在于，涂敷由硅构成的层，优选通过溅射，并通过在标准气氛中的热处理进行后处理。
29.权利要求25的方法，其特征在于，涂敷金属层，然后将其充分氧化。
30.权利要求29的方法，其特征在于，通过选择
·涂敷的层厚
·氧化温度
·氧化期间的气氛来对充分氧化进行控制。
31.权利要求30的方法，其特征在于，涂敷厚度为d的层，其原则为：
     3nm≤d≤10nm，优选
     4nm≤d≤6nm而且充分氧化在标准气氛中进行。
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