TW466589B - Silicon wafer with epitaxial layer and its production - Google Patents
Silicon wafer with epitaxial layer and its production Download PDFInfo
- Publication number
- TW466589B TW466589B TW89118661A TW89118661A TW466589B TW 466589 B TW466589 B TW 466589B TW 89118661 A TW89118661 A TW 89118661A TW 89118661 A TW89118661 A TW 89118661A TW 466589 B TW466589 B TW 466589B
- Authority
- TW
- Taiwan
- Prior art keywords
- silicon
- wafer
- crystal
- epitaxial layer
- epitaxial
- Prior art date
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- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8464199A JP2000272998A (ja) | 1999-03-26 | 1999-03-26 | エピタキシャル層付きシリコンウェーハ及びその製造方法。 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW466589B true TW466589B (en) | 2001-12-01 |
Family
ID=13836330
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW89118661A TW466589B (en) | 1999-03-26 | 2000-09-13 | Silicon wafer with epitaxial layer and its production |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP2000272998A (ja) |
TW (1) | TW466589B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112002639A (zh) * | 2020-07-21 | 2020-11-27 | 上海新昇半导体科技有限公司 | 一种外延晶圆的制造方法和外延晶圆 |
TWI828442B (zh) * | 2022-11-25 | 2024-01-01 | 日商Sumco股份有限公司 | 磊晶晶圓 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001068420A (ja) * | 1999-08-30 | 2001-03-16 | Komatsu Electronic Metals Co Ltd | エピタキシャルシリコンウエハの製造方法 |
KR20030035152A (ko) | 2001-10-30 | 2003-05-09 | 주식회사 하이닉스반도체 | 반도체웨이퍼 제조방법 |
-
1999
- 1999-03-26 JP JP8464199A patent/JP2000272998A/ja active Pending
-
2000
- 2000-09-13 TW TW89118661A patent/TW466589B/zh not_active IP Right Cessation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112002639A (zh) * | 2020-07-21 | 2020-11-27 | 上海新昇半导体科技有限公司 | 一种外延晶圆的制造方法和外延晶圆 |
TWI828442B (zh) * | 2022-11-25 | 2024-01-01 | 日商Sumco股份有限公司 | 磊晶晶圓 |
Also Published As
Publication number | Publication date |
---|---|
JP2000272998A (ja) | 2000-10-03 |
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Legal Events
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GD4A | Issue of patent certificate for granted invention patent | ||
MM4A | Annulment or lapse of patent due to non-payment of fees |