TW466589B - Silicon wafer with epitaxial layer and its production - Google Patents

Silicon wafer with epitaxial layer and its production Download PDF

Info

Publication number
TW466589B
TW466589B TW89118661A TW89118661A TW466589B TW 466589 B TW466589 B TW 466589B TW 89118661 A TW89118661 A TW 89118661A TW 89118661 A TW89118661 A TW 89118661A TW 466589 B TW466589 B TW 466589B
Authority
TW
Taiwan
Prior art keywords
silicon
wafer
crystal
epitaxial layer
epitaxial
Prior art date
Application number
TW89118661A
Other languages
English (en)
Chinese (zh)
Inventor
Hiroshi Koya
Masataka Kimura
Kazuhiro Ikezawa
Ken Nakajima
Hiroyuki Shiraki
Original Assignee
Mitsubishi Material Silicon
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Material Silicon filed Critical Mitsubishi Material Silicon
Application granted granted Critical
Publication of TW466589B publication Critical patent/TW466589B/zh

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
TW89118661A 1999-03-26 2000-09-13 Silicon wafer with epitaxial layer and its production TW466589B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8464199A JP2000272998A (ja) 1999-03-26 1999-03-26 エピタキシャル層付きシリコンウェーハ及びその製造方法。

Publications (1)

Publication Number Publication Date
TW466589B true TW466589B (en) 2001-12-01

Family

ID=13836330

Family Applications (1)

Application Number Title Priority Date Filing Date
TW89118661A TW466589B (en) 1999-03-26 2000-09-13 Silicon wafer with epitaxial layer and its production

Country Status (2)

Country Link
JP (1) JP2000272998A (ja)
TW (1) TW466589B (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112002639A (zh) * 2020-07-21 2020-11-27 上海新昇半导体科技有限公司 一种外延晶圆的制造方法和外延晶圆
TWI828442B (zh) * 2022-11-25 2024-01-01 日商Ｓｕｍｃｏ股份有限公司 磊晶晶圓

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001068420A (ja) * 1999-08-30 2001-03-16 Komatsu Electronic Metals Co Ltd エピタキシャルシリコンウエハの製造方法
KR20030035152A (ko) 2001-10-30 2003-05-09 주식회사 하이닉스반도체 반도체웨이퍼 제조방법

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112002639A (zh) * 2020-07-21 2020-11-27 上海新昇半导体科技有限公司 一种外延晶圆的制造方法和外延晶圆
TWI828442B (zh) * 2022-11-25 2024-01-01 日商Ｓｕｍｃｏ股份有限公司 磊晶晶圓

Also Published As

Publication number Publication date
JP2000272998A (ja) 2000-10-03

Similar Documents

Publication Publication Date Title
KR100369760B1 (ko) 실리콘 웨이퍼의 제조 방법
TW505709B (en) A method for producing an epitaxial silicon single crystal wafer and the epitaxial silicon single crystal wafer
EP2110466B1 (en) Silicon single crystal manufacturing method
KR101812889B1 (ko) 단결정 실리콘 성장 방법 및 이로 제조된 단결정 실리콘 잉곳
TWI402383B (zh) 磊晶晶圓及其製備方法
US6547875B1 (en) Epitaxial wafer and a method for manufacturing the same
JP2013170104A (ja) エピタキシャル炭化珪素ウエハの製造方法
TW466589B (en) Silicon wafer with epitaxial layer and its production
US6818197B2 (en) Epitaxial wafer
US9957639B2 (en) Method for producing epitaxial silicon carbide wafer
JP4510997B2 (ja) シリコン半導体基板およびその製造方法
JP4750916B2 (ja) シリコン単結晶インゴットの育成方法およびそれを用いたシリコンウェーハ
JP5589867B2 (ja) シリコンエピタキシャルウェーハの製造方法
CN106498493B (zh) 外延硅晶片
JP2001089294A (ja) 点欠陥の凝集体が存在しないシリコン単結晶の連続引上げ法
JP4442955B2 (ja) エピタキシャルウェーハの製造方法
TW503463B (en) Silicon wafer and manufacture method thereof
KR100386230B1 (ko) 에피택셜층 적층용 실리콘 웨이퍼 및 에피택셜 웨이퍼 및그의 제조 방법
TW201909246A (zh) 晶圓製造方法和晶圓
JP4577320B2 (ja) シリコンウェーハの製造方法
JP3903643B2 (ja) エピタキシャルウェーハの製造方法
TW528816B (en) Method for heat treating silicon wafer
CN109075039A (zh) 外延晶片的制造方法
TWI654343B (zh) 單晶矽之成長方法及其製備之單晶矽錠（一）
KR100369767B1 (ko) 실리콘 웨이퍼의 열처리 방법 및 이 방법에 사용되는 웨이퍼 및 이 방법으로 열처리한 웨이퍼

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees