TW466560B - Surface structure and method of making, and electrostatic wafer clamp incorporating surface structure - Google Patents
Surface structure and method of making, and electrostatic wafer clamp incorporating surface structure Download PDFInfo
- Publication number
- TW466560B TW466560B TW089120456A TW89120456A TW466560B TW 466560 B TW466560 B TW 466560B TW 089120456 A TW089120456 A TW 089120456A TW 89120456 A TW89120456 A TW 89120456A TW 466560 B TW466560 B TW 466560B
- Authority
- TW
- Taiwan
- Prior art keywords
- patent application
- item
- scope
- surface structure
- coating
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 238000000576 coating method Methods 0.000 claims abstract description 87
- 239000011248 coating agent Substances 0.000 claims abstract description 85
- 239000002245 particle Substances 0.000 claims abstract description 23
- 239000000112 cooling gas Substances 0.000 claims abstract description 13
- 238000012545 processing Methods 0.000 claims abstract description 6
- 239000010410 layer Substances 0.000 claims description 181
- 235000012431 wafers Nutrition 0.000 claims description 127
- 239000004065 semiconductor Substances 0.000 claims description 43
- 238000000034 method Methods 0.000 claims description 39
- 239000007789 gas Substances 0.000 claims description 32
- 238000011049 filling Methods 0.000 claims description 30
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 24
- 229920002379 silicone rubber Polymers 0.000 claims description 16
- 239000004945 silicone rubber Substances 0.000 claims description 16
- 239000011247 coating layer Substances 0.000 claims description 15
- 238000001816 cooling Methods 0.000 claims description 14
- 230000002079 cooperative effect Effects 0.000 claims description 13
- 239000000853 adhesive Substances 0.000 claims description 12
- 230000001070 adhesive effect Effects 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 12
- 229920000642 polymer Polymers 0.000 claims description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 10
- 229910052799 carbon Inorganic materials 0.000 claims description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- 235000012239 silicon dioxide Nutrition 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 7
- 239000004576 sand Substances 0.000 claims description 7
- 239000010408 film Substances 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 238000003825 pressing Methods 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- 239000011149 active material Substances 0.000 claims description 3
- 239000002783 friction material Substances 0.000 claims description 3
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 2
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 2
- -1 polydimethylsiloxane Polymers 0.000 claims description 2
- 238000007639 printing Methods 0.000 claims description 2
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 claims 1
- 238000005507 spraying Methods 0.000 claims 1
- 238000012546 transfer Methods 0.000 abstract description 47
- 238000011109 contamination Methods 0.000 abstract description 12
- 239000012212 insulator Substances 0.000 description 39
- 239000000463 material Substances 0.000 description 27
- 238000005468 ion implantation Methods 0.000 description 11
- 238000010884 ion-beam technique Methods 0.000 description 10
- 230000008569 process Effects 0.000 description 9
- 239000012790 adhesive layer Substances 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000007767 bonding agent Substances 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 229910010293 ceramic material Inorganic materials 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000011068 loading method Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000010992 reflux Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229920001940 conductive polymer Polymers 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 239000012811 non-conductive material Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000004963 Torlon Substances 0.000 description 1
- 229920003997 Torlon® Polymers 0.000 description 1
- YKTSYUJCYHOUJP-UHFFFAOYSA-N [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] Chemical compound [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] YKTSYUJCYHOUJP-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- CAVCGVPGBKGDTG-UHFFFAOYSA-N alumanylidynemethyl(alumanylidynemethylalumanylidenemethylidene)alumane Chemical compound [Al]#C[Al]=C=[Al]C#[Al] CAVCGVPGBKGDTG-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000012636 effector Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 230000002996 emotional effect Effects 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 235000012054 meals Nutrition 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003990 molecular pathway Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- ZPZCREMGFMRIRR-UHFFFAOYSA-N molybdenum titanium Chemical compound [Ti].[Mo] ZPZCREMGFMRIRR-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 239000005304 optical glass Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- 239000002470 thermal conductor Substances 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15739899P | 1999-10-01 | 1999-10-01 | |
| US23303900P | 2000-09-15 | 2000-09-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW466560B true TW466560B (en) | 2001-12-01 |
Family
ID=26854095
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW089120456A TW466560B (en) | 1999-10-01 | 2000-10-02 | Surface structure and method of making, and electrostatic wafer clamp incorporating surface structure |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP1224687A2 (ja) |
| JP (1) | JP4854056B2 (ja) |
| KR (1) | KR20020041448A (ja) |
| TW (1) | TW466560B (ja) |
| WO (1) | WO2001026141A2 (ja) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6593699B2 (en) * | 2001-11-07 | 2003-07-15 | Axcelis Technologies, Inc. | Method for molding a polymer surface that reduces particle generation and surface adhesion forces while maintaining a high heat transfer coefficient |
| US20040066601A1 (en) * | 2002-10-04 | 2004-04-08 | Varian Semiconductor Equipment Associates, Inc. | Electrode configuration for retaining cooling gas on electrostatic wafer clamp |
| US20100144147A1 (en) * | 2005-07-28 | 2010-06-10 | Kyocera Corporation | Sample holding tool, sample suction device using the same and sample processing method using the same |
| US8023247B2 (en) * | 2008-12-10 | 2011-09-20 | Axcelis Technologies, Inc. | Electrostatic chuck with compliant coat |
| JP2014027207A (ja) * | 2012-07-30 | 2014-02-06 | Hitachi Chemical Co Ltd | 誘電体及びこの誘電体を用いた静電チャック |
| US20200381271A1 (en) * | 2019-05-28 | 2020-12-03 | Applied Materials, Inc. | System and apparatus for enhanced substrate heating and rapid substrate cooling |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5582771A (en) * | 1978-12-20 | 1980-06-21 | Toshiba Corp | Ion implanting device |
| US4457359A (en) * | 1982-05-25 | 1984-07-03 | Varian Associates, Inc. | Apparatus for gas-assisted, solid-to-solid thermal transfer with a semiconductor wafer |
| US4583012A (en) * | 1983-10-20 | 1986-04-15 | General Instrument Corporation | Logical circuit array |
| JPS60103829U (ja) * | 1983-12-20 | 1985-07-15 | 日新電機株式会社 | 熱伝導性弾性シ−ト |
| JPS61197500A (ja) * | 1985-02-27 | 1986-09-01 | Ulvac Corp | 基板の冷却装置 |
| JPS6276146A (ja) * | 1985-09-27 | 1987-04-08 | Nissin Electric Co Ltd | イオン処理装置用熱伝導体 |
| KR970008322B1 (en) * | 1988-01-07 | 1997-05-23 | Varian Associates | Method and apparatus fro thermal transfer with a semiconductor wafer in vacuum |
| US4832781A (en) * | 1988-01-07 | 1989-05-23 | Varian Associates, Inc. | Methods and apparatus for thermal transfer with a semiconductor wafer in vacuum |
| JPH0755423B2 (ja) * | 1991-03-29 | 1995-06-14 | 日本碍子株式会社 | ウエハー保持具の製造方法 |
| JPH0633236A (ja) * | 1992-07-14 | 1994-02-08 | Nissin Electric Co Ltd | 基体保持装置 |
| JP3021264B2 (ja) * | 1993-12-13 | 2000-03-15 | アネルバ株式会社 | 基板加熱・冷却機構 |
| US5822171A (en) * | 1994-02-22 | 1998-10-13 | Applied Materials, Inc. | Electrostatic chuck with improved erosion resistance |
| EP0668608A1 (en) * | 1994-02-22 | 1995-08-23 | Applied Materials, Inc. | Electrostatic chuck with erosion-resistant electrode connection |
| JP4079992B2 (ja) * | 1994-10-17 | 2008-04-23 | バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド | 導電性被処理体を載置部材に締め付けるための装置及び静電クランピング方法 |
| US5583736A (en) * | 1994-11-17 | 1996-12-10 | The United States Of America As Represented By The Department Of Energy | Micromachined silicon electrostatic chuck |
| JPH09172055A (ja) * | 1995-12-19 | 1997-06-30 | Fujitsu Ltd | 静電チャック及びウエハの吸着方法 |
| JPH09219442A (ja) * | 1996-02-09 | 1997-08-19 | Kobe Steel Ltd | 静電チャックおよびその製造方法 |
| JP2817698B2 (ja) * | 1996-03-12 | 1998-10-30 | 日本電気株式会社 | 半導体基板の冷却装置 |
| US5812362A (en) * | 1996-06-14 | 1998-09-22 | Applied Materials, Inc. | Method and apparatus for the use of diamond films as dielectric coatings on electrostatic chucks |
| JP3687877B2 (ja) * | 1996-12-18 | 2005-08-24 | 信越化学工業株式会社 | イオン注入機用プラテン |
| JPH10335439A (ja) * | 1997-06-04 | 1998-12-18 | Shin Etsu Chem Co Ltd | 静電チャック |
| US5903428A (en) * | 1997-09-25 | 1999-05-11 | Applied Materials, Inc. | Hybrid Johnsen-Rahbek electrostatic chuck having highly resistive mesas separating the chuck from a wafer supported thereupon and method of fabricating same |
| JP3933289B2 (ja) * | 1998-02-02 | 2007-06-20 | 太平洋セメント株式会社 | 静電チャック |
-
2000
- 2000-09-29 JP JP2001529010A patent/JP4854056B2/ja not_active Expired - Fee Related
- 2000-09-29 KR KR1020027004166A patent/KR20020041448A/ko not_active Application Discontinuation
- 2000-09-29 EP EP00968508A patent/EP1224687A2/en not_active Withdrawn
- 2000-09-29 WO PCT/US2000/026910 patent/WO2001026141A2/en not_active Application Discontinuation
- 2000-10-02 TW TW089120456A patent/TW466560B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| WO2001026141A3 (en) | 2001-10-25 |
| EP1224687A2 (en) | 2002-07-24 |
| JP2003511856A (ja) | 2003-03-25 |
| JP4854056B2 (ja) | 2012-01-11 |
| KR20020041448A (ko) | 2002-06-01 |
| WO2001026141A2 (en) | 2001-04-12 |
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Legal Events
| Date | Code | Title | Description |
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| GD4A | Issue of patent certificate for granted invention patent | ||
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