TW457618B - Silicon fixtures for wafer processing and method of fabrication - Google Patents
Silicon fixtures for wafer processing and method of fabrication Download PDFInfo
- Publication number
- TW457618B TW457618B TW89106650A TW89106650A TW457618B TW 457618 B TW457618 B TW 457618B TW 89106650 A TW89106650 A TW 89106650A TW 89106650 A TW89106650 A TW 89106650A TW 457618 B TW457618 B TW 457618B
- Authority
- TW
- Taiwan
- Prior art keywords
- silicon
- item
- tower
- patent application
- scope
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 73
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 71
- 239000010703 silicon Substances 0.000 title claims abstract description 71
- 238000012545 processing Methods 0.000 title abstract description 12
- 238000004519 manufacturing process Methods 0.000 title description 13
- 235000012431 wafers Nutrition 0.000 claims abstract description 70
- 238000000034 method Methods 0.000 claims abstract description 61
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 21
- 239000000463 material Substances 0.000 claims description 50
- 239000000758 substrate Substances 0.000 claims description 33
- 239000013078 crystal Substances 0.000 claims description 22
- 230000002079 cooperative effect Effects 0.000 claims description 13
- 230000004308 accommodation Effects 0.000 claims description 2
- 239000004576 sand Substances 0.000 claims description 2
- 210000005069 ears Anatomy 0.000 claims 1
- 239000012634 fragment Substances 0.000 claims 1
- 235000012054 meals Nutrition 0.000 claims 1
- 235000012976 tarts Nutrition 0.000 claims 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract description 7
- 238000003780 insertion Methods 0.000 abstract description 4
- 230000037431 insertion Effects 0.000 abstract description 4
- 229920005591 polysilicon Polymers 0.000 abstract 1
- 238000005520 cutting process Methods 0.000 description 26
- 239000010432 diamond Substances 0.000 description 12
- 229910003460 diamond Inorganic materials 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000012535 impurity Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 239000000853 adhesive Substances 0.000 description 7
- 230000001070 adhesive effect Effects 0.000 description 7
- 239000002210 silicon-based material Substances 0.000 description 6
- 239000002178 crystalline material Substances 0.000 description 5
- 229910021419 crystalline silicon Inorganic materials 0.000 description 5
- 230000008018 melting Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000011109 contamination Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910001385 heavy metal Inorganic materials 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 244000115658 Dahlia pinnata Species 0.000 description 1
- 235000012040 Dahlia pinnata Nutrition 0.000 description 1
- 229910004028 SiCU Inorganic materials 0.000 description 1
- 229910003915 SiCl2H2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 241000209140 Triticum Species 0.000 description 1
- 235000021307 Triticum Nutrition 0.000 description 1
- 102000016663 Vascular Endothelial Growth Factor Receptor-3 Human genes 0.000 description 1
- 108010053100 Vascular Endothelial Growth Factor Receptor-3 Proteins 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- -1 broken carbide Chemical compound 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 238000010961 commercial manufacture process Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000004043 dyeing Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 230000010076 replication Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/292,496 US6205993B1 (en) | 1999-04-15 | 1999-04-15 | Method and apparatus for fabricating elongate crystalline members |
| US09/292,495 US6196211B1 (en) | 1999-04-15 | 1999-04-15 | Support members for wafer processing fixtures |
| US09/292,491 US6225594B1 (en) | 1999-04-15 | 1999-04-15 | Method and apparatus for securing components of wafer processing fixtures |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW457618B true TW457618B (en) | 2001-10-01 |
Family
ID=27404131
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW89106650A TW457618B (en) | 1999-04-15 | 2000-04-10 | Silicon fixtures for wafer processing and method of fabrication |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP1171905A1 (enExample) |
| JP (2) | JP4328468B2 (enExample) |
| TW (1) | TW457618B (enExample) |
| WO (1) | WO2000063952A1 (enExample) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6284997B1 (en) * | 2000-11-08 | 2001-09-04 | Integrated Materials, Inc. | Crack free welding of silicon |
| US6811040B2 (en) * | 2001-07-16 | 2004-11-02 | Rohm And Haas Company | Wafer holding apparatus |
| JP2003086525A (ja) * | 2001-09-12 | 2003-03-20 | Toshiba Ceramics Co Ltd | シリコンウエハ熱処理用治具およびその製造方法 |
| US6838114B2 (en) | 2002-05-24 | 2005-01-04 | Micron Technology, Inc. | Methods for controlling gas pulsing in processes for depositing materials onto micro-device workpieces |
| US6955725B2 (en) | 2002-08-15 | 2005-10-18 | Micron Technology, Inc. | Reactors with isolated gas connectors and methods for depositing materials onto micro-device workpieces |
| US7335396B2 (en) | 2003-04-24 | 2008-02-26 | Micron Technology, Inc. | Methods for controlling mass flow rates and pressures in passageways coupled to reaction chambers and systems for depositing material onto microfeature workpieces in reaction chambers |
| US7344755B2 (en) | 2003-08-21 | 2008-03-18 | Micron Technology, Inc. | Methods and apparatus for processing microfeature workpieces; methods for conditioning ALD reaction chambers |
| US7235138B2 (en) | 2003-08-21 | 2007-06-26 | Micron Technology, Inc. | Microfeature workpiece processing apparatus and methods for batch deposition of materials on microfeature workpieces |
| US7422635B2 (en) | 2003-08-28 | 2008-09-09 | Micron Technology, Inc. | Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces |
| US7056806B2 (en) | 2003-09-17 | 2006-06-06 | Micron Technology, Inc. | Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces |
| US7282239B2 (en) | 2003-09-18 | 2007-10-16 | Micron Technology, Inc. | Systems and methods for depositing material onto microfeature workpieces in reaction chambers |
| US7323231B2 (en) | 2003-10-09 | 2008-01-29 | Micron Technology, Inc. | Apparatus and methods for plasma vapor deposition processes |
| US7581511B2 (en) | 2003-10-10 | 2009-09-01 | Micron Technology, Inc. | Apparatus and methods for manufacturing microfeatures on workpieces using plasma vapor processes |
| US7258892B2 (en) | 2003-12-10 | 2007-08-21 | Micron Technology, Inc. | Methods and systems for controlling temperature during microfeature workpiece processing, e.g., CVD deposition |
| US7906393B2 (en) | 2004-01-28 | 2011-03-15 | Micron Technology, Inc. | Methods for forming small-scale capacitor structures |
| US7584942B2 (en) | 2004-03-31 | 2009-09-08 | Micron Technology, Inc. | Ampoules for producing a reaction gas and systems for depositing materials onto microfeature workpieces in reaction chambers |
| US8133554B2 (en) | 2004-05-06 | 2012-03-13 | Micron Technology, Inc. | Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces |
| US7972703B2 (en) * | 2005-03-03 | 2011-07-05 | Ferrotec (Usa) Corporation | Baffle wafers and randomly oriented polycrystalline silicon used therefor |
| JP2006286874A (ja) * | 2005-03-31 | 2006-10-19 | Komatsu Electronic Metals Co Ltd | ウェーハ熱処理用治具及び熱処理後のウェーハ |
| JP5519389B2 (ja) * | 2010-04-23 | 2014-06-11 | 株式会社ブリヂストン | 支持ピン |
| KR101035552B1 (ko) * | 2011-03-24 | 2011-05-23 | (주)상아프론테크 | 솔라웨이퍼 카세트 |
| TWI602779B (zh) * | 2013-03-28 | 2017-10-21 | 三菱綜合材料股份有限公司 | 矽構材及矽構材之製造方法 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6228437U (enExample) * | 1985-08-01 | 1987-02-20 | ||
| JPH0761849B2 (ja) * | 1987-12-09 | 1995-07-05 | 株式会社トクヤマ | 構造体 |
| US4914269A (en) * | 1989-07-24 | 1990-04-03 | Micron Technology, Inc. | Method of sealing a ceramic lid on a ceramic semiconductor package with a high-power laser |
| JPH046826A (ja) * | 1990-04-24 | 1992-01-10 | Tokyo Electron Ltd | 熱処理装置 |
| JP2566340B2 (ja) * | 1990-11-19 | 1996-12-25 | 東芝セラミックス株式会社 | シリコン製ウエハ支持ボートの製造方法 |
| JPH04300262A (ja) * | 1991-03-28 | 1992-10-23 | Shin Etsu Chem Co Ltd | 炭化珪素質治具 |
| JPH06151571A (ja) * | 1992-11-06 | 1994-05-31 | Toshiba Ceramics Co Ltd | 単結晶シリコン製ウェーハボート |
| JPH06163676A (ja) * | 1992-11-20 | 1994-06-10 | Toshiba Ceramics Co Ltd | ウエハボート |
| US5492229A (en) * | 1992-11-27 | 1996-02-20 | Toshiba Ceramics Co., Ltd. | Vertical boat and a method for making the same |
| JP3245246B2 (ja) * | 1993-01-27 | 2002-01-07 | 東京エレクトロン株式会社 | 熱処理装置 |
| JP3117573B2 (ja) * | 1993-04-02 | 2000-12-18 | 東芝セラミックス株式会社 | 窒化ケイ素繊維強化シリコン材及びその製造方法 |
| JPH08107079A (ja) * | 1994-09-30 | 1996-04-23 | Toshiba Ceramics Co Ltd | 縦型ウェ−ハボ−ト及び縦型熱処理炉 |
| JP3773973B2 (ja) * | 1995-12-25 | 2006-05-10 | 株式会社トクヤマ | シリコン成形体用前駆体 |
| JPH09213645A (ja) * | 1996-01-29 | 1997-08-15 | Sumitomo Sitix Corp | ウェーハ支持装置及びその製造方法 |
| TW325588B (en) * | 1996-02-28 | 1998-01-21 | Asahi Glass Co Ltd | Vertical wafer boat |
| JP3479201B2 (ja) * | 1997-03-28 | 2003-12-15 | 東芝セラミックス株式会社 | 組立式ウエハ用ボート及びその取付治具 |
| JPH10284427A (ja) * | 1997-04-03 | 1998-10-23 | Mitsubishi Materials Corp | シリコンウエハ支持装置 |
| JP3507975B2 (ja) * | 1997-04-15 | 2004-03-15 | 東芝セラミックス株式会社 | 縦型ウエハボート |
| JP3568017B2 (ja) * | 1997-06-25 | 2004-09-22 | 東芝セラミックス株式会社 | ウエハボート |
| US6171400B1 (en) * | 1998-10-02 | 2001-01-09 | Union Oil Company Of California | Vertical semiconductor wafer carrier |
-
2000
- 2000-04-06 JP JP2000612987A patent/JP4328468B2/ja not_active Expired - Lifetime
- 2000-04-06 EP EP00928143A patent/EP1171905A1/en not_active Withdrawn
- 2000-04-06 WO PCT/US2000/009362 patent/WO2000063952A1/en not_active Ceased
- 2000-04-10 TW TW89106650A patent/TW457618B/zh not_active IP Right Cessation
-
2009
- 2009-04-24 JP JP2009106498A patent/JP2009170938A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JP2002542621A (ja) | 2002-12-10 |
| EP1171905A1 (en) | 2002-01-16 |
| JP4328468B2 (ja) | 2009-09-09 |
| JP2009170938A (ja) | 2009-07-30 |
| WO2000063952A1 (en) | 2000-10-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MK4A | Expiration of patent term of an invention patent |