TW457618B - Silicon fixtures for wafer processing and method of fabrication - Google Patents

Abstract

A silicon tower for removably supporting a plurality of silicon wafers during thermal processing. A preferred embodiment of the tower includes four legs secured on their ends to two bases. A plurality of slots are cut in the legs allowing slidable insertion of the wafers and support for them. The legs preferably have a rounded wedge shape with a curved front surface of small radius cut with the slots and a curved back surface of a substantially larger radius. Preferably, the legs are machined from a round bar of virgin polysilicon. The bases may be either virgin poly or monocrystalline silicon. Various attachment methods are available for securing the legs to the bases, including fusing legs to the bases with the application of energy.

Description

4576 18 A7 --- B7 V. Description of the invention () Field of invention: (Please read the precautions on the back before filling out this page) This invention relates to the use of fixed wafer towers during the manufacturing process of semiconductor integration cycles, especially It is said that the present invention relates to a silicon wafer holding tower supporting a wafer. Background of the Invention: In the development of commercial manufacture of silicon wafers, more and more large wafers are processed and manufactured at the same time, and their characteristic sizes have also been reduced to 0.18 # m and smaller. This process has been used for the increasing demand for higher process equipment's efficiency and the handling and handling machinery that wafers need to move, transport and store during the process. These requirements, whether they are impurities or particles, include temperature uniformity and impurity contamination. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. In many chemical and heat treatment operations, wafers often need to be fixed in precise positions in various process steps, especially in refining, diffusion of additives, or Chemical vapor sinks on many wafers at the same time; Larger and more complex structures such as "boat-shaped vessels" or "towers" are most typically used. An example of this structure is described in Tanaka et ai. U.S. Patent No. 5,492,229-Tanakaetal. Describes a vertical boat-shaped container supporting a number of semi-conductive wafers. This container contains two end members and several support members. In one embodiment, 'the support member is formed by a longitudinally cut tubular member to provide a quarter member with a circular circle. In another embodiment, the support member is formed of a long member cut in a tubular member vertically to provide a half arc. Tanaka et al. Listed all possible materials for its boat-shaped container, such as silica glass, broken carbide, carbon, single crystal, and more. Page 2 This paper applies Chinese National Standard (CNS) A4 (210 x 297 mm) ) 457618 A7 B7 printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention () Crystal silicon and silicon carbide doped with silicon. These various ingredients can be fused to each other if they are made of silica glass; otherwise, "they are combined in a predetermined way".

Koons U.S. Patent No. 5,534,074 also uses a vertical ship-shaped container for supporting semiconductor wafers. This container contains several rods and has many cuts along its length. The grooving structure is intended to reduce the shielding of the wafers placed in the boat-shaped container during the manufacturing process. Although any known material suitable for supporting wafers can be used, the rod is cylindrical and is designated to be made of fused quartz.

Quernemoen's U.S. Patent No. 4,872,554 shows a reinforced support for silicon circles and other similar items. The support frame includes a side assembly consisting of a tubular track with protruding teeth to support the wafer at a fixed pitch. The track is made of plastic and can contain a sturdy insert for reinforcement. These teeth can be molded at the same time as the track or shocked onto the track D

Kato et al. U.S. Patent No. 5,752,609 is applied to a wafer ship container containing several arrangements to support a ring member. Several wafer support units are connected to the ring member and contain angled protrusions to make contact with the wafer. Kato et al. Also described a wafer ship-shaped container, one of several cylindrical quartz rods with wafer support grooves. The theoretical advantages provided by pure silicon structures are widely understood. Traditional towers and boat-shaped vessels are basically made of quartz or silicon carbide, which will cause pollution and become unstable at higher temperatures. Use the same material as the wafer to assemble the wafer support structure, that is, silicon. The pollution and page 3 of this paper are applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 cm)-(please listen first Read the notes on the back and fill in this page) Order *-. Line · Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 457618 Α7 __— -—__ Β7 V. Description of the invention (the flt4 properties of the A-shape are reduced. This The broken structure will reflect the process temperature, conditions, and chemistry of the wafer in exactly the same way, so it can greatly enhance the overall effective life of the structure. Unfortunately, the standard assembly of the silicon structure in the "predetermined method" As Katoetal • Proposed is pure silicon / It is also known to be widely accepted as one of the reasons for materials such as vessel-shaped vessels and tower structures. The difficulties in working with monocrystalline silicon, polycrystalline silicon, and primitive polycrystals have led to problems like Tanakaetal The development of the structure shown, in which when the single crystal is considered as the selected material, the connection between the support member and the end member is not mentioned at all, and the only specifically described assembly support structure The method is about cutting out an extruded tubular member. The support structure is inherently more unstable than those made from materials that are more traditional and easier to apply, such as quartz or silicon carbide. Similarly, Koons, Quernemoen, and Kat Oet al's patents are also unable to meet the problem of providing a robust and reliable wafer support structure to reduce shading and contamination. Although effective in some areas, the protrusions and None of the grooves are suitable for assembly with materials such as silicon 'or require a considerable cross-sectional area to provide stable and accurate wafer support. We understand that silicon is extremely brittle and does not easily melt. As a result of this knowledge, Dahlia knows The broken structure is widely considered to be fragile, and to the disadvantages it is unreliable and fragile. Therefore, they are difficult to obtain widespread commercial recognition. Furthermore, due to the crystal structure of single crystal silicon, from crystalline silicon The extruded material has a pronounced "texture" which generally goes in the longitudinal direction. Silicon materials are often page 4 This paper is in accordance with Chinese national standards (CNS & g) t; A4 size (210 x 297 mm) ------------ face mount! l · --- order ------! line_ '{. C Feng first read the back Note for refilling this page} 4576 1 8 A7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economy The cutting technology will texture this silicon material along the texture, and cause the destruction of this material. We can see that the demand for the assembly method of monocrystalline and polycrystalline silicon structural members used in semiconductor wafer production is, & 仔 在In addition, the advantages of S-retention dreams as structural materials will eliminate the shortcomings of C-knowledge silicon structure. CZChralski (CZ) single crystal seconds are used in the form of wafers in semiconductor bonding cycles ’and are made of molten silicon scales whose horizontal dimensions can reach one-single crystal ::::. CZochralski polycrystalline wheat is often referred to as a semi-single crystal second. It has the same local structure as the single junction alumina, but is composed of different crystals. The crystals range in size from 1 mm to 100 mm and are separated by the grain boundaries. The CZ polycrystalline @ is considered to be a polycrystalline silicon that has traditionally appeared in the context of structural members. The form of cz 彳 which forms single crystals or polycrystals depends on the rate of its formation. Cz silicon can be formed by adding lp- heavy metal impurities, but carbon and nitrogen will appear at concentrations between i and 7 ppm, and oxygen will appear at concentrations between 10 and 25 ppm. The crystals basically have very similar directions to each other. Furthermore, polycrystalline silicon often forms a thin layer in a silicon-combined cycle of chemical vapor deposition, but the thin film cannot be directly applied to the present invention. Primitive polycrystalline silicon, hereinafter referred to as primitive polycrystalline silicon, is a special type of polycrystalline silicon and is widely manufactured for use in the semiconductor industry. Primitive multi-knots are made by using various silanes condensed on seed seed as the lead --------------------------------- (Notes on the back then fill out this page)

This paper is scaled to M House Standard (CNS) A4 specifications (210 X p. 5 297 mm)

V. Description of the invention (Consumer cooperation with employees of the Intellectual Property Bureau of the Ministry of Economic Affairs and Du Duchua University for vapor deposition (CVD) to form a relatively large ingot (diameter up to Bcm). The precursor contains SiH4, Sicm3, SiCl2H2, Sici ^ And SiCU. Among these, Sicl3H is the most commonly used commercially, but the single wonderland (SiH〇) has been adopted from time to time based on its historically well-known use in floating area (n〇at_zone) deposition. The original polycrystal is a very high-level pure substance with an impurity concentration of 10-i2cm-3 or lower. The standard generally expressed is that it contains lppt (one part per trillion, 1x10-υ Impurities containing all possible pollutants of oxygen). Even if there are some changes, the impurity content of the original polycrystal is still less than 10 ppt. This and the polycrystalline silicon produced by Czochralski have at least ippm of various heavy metal impurities and can be high To 25ppm and more dissolved gases. The original polycrystals are generated commercially and they contain high stresses and are easily damaged. Semiconductor silicon wafers are often produced by the Czochralski method, in which polycrystalline silicon is produced. Broken and then intentionally introduced dopants and fused together at a temperature just above 1 4 1 6 C. 1416 ° C is the melting point of silicon under ambient pressure. — A single crystal is placed on a small surface on the melting surface. The crystal seeds are aggregated, and the resulting single crystal ingot is slowly withdrawn from the melting solution. Whether Czochralski generates silicon in the state of single crystal or polycrystal is mostly determined by its extraction speed, and the crystal Although there are different sizes, it tends to be larger. On the other hand, the original polycrystals are assembled from a hot seed rod and thus form a crystalline arm that develops from the center of the rod to all sides. As far as known, 'primitive polycrystals' It has never been used in a silicon fixed tower that supports wafers in the semiconductor manufacturing process. Therefore, it must be known that a fixed tower for wafer processing must exist-page 6 This paper applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) -------------,. Ill · --- order --------- line ^. F Please read the notes on the back before filling in this page )

Dyeing and providing a solid and reliable support member ’will reduce shading and contamination. Stable and accurate wafer support. Purpose and summary of the invention: The present invention includes a silicon wafer process fixed tower. This tower contains-generally elongated support members with elements extending outwardly from their ends. This tower = contains a general planar silicon substrate. This substrate contains a receiving area to which the supporting members are fixed. In a basic embodiment, at least a portion of the fixed tower is composed of polycrystalline silicon. In a more specific embodiment, the long structure is processed from the original polycrystalline substrate, and the substrate is a single-junction silicon. In another embodiment, the substrate is composed of several parts. These Some and long members are formed from the original polycrystals. A method for assembling a long structural member from a unitary material of a crystalline material is provided. This material is predetermined in length, width, and degree. Cut the first plane roughly in this material. This cut extends along the entire length of the material and needs to be smaller than the entire width of the material. It is necessary to cut at least one more time on the material. This at least one more cut is like the first plane extension of the cutting material, and this material is cut into two parts. The step of making at least one additional cut may include several times: Outer cuts' In one embodiment, there are at least three additional cuts. Cutting. Use a circular saw with a diamond-coated surface on the edge. This circle 3 can be operated between 50 rpm and 50,000 rpm, preferably around 40,000 rp. This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) ----------- '! Packing ----- r --- Order ---- I-- Line ^ '(Please read the precautions on the back before filling out this page) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 4576 1 8 A7 Printed by the Employee Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the Invention (Materials of this crystalline material Can provide simple methods such as silicon materials can be made of crystalline and hard materials. This is the first one from 发 明 夕 夕 明 ～ ~ silicon materials to implement. In the embodiment, the material can provide a general cylindrical element Make a roughly flat cutting step and at least-the casting step can be repeated for each of the two parts ... two sections of the cylinder are cut into four pieces. Repeat the above to cut the original cylinder into eight Each block of block 2 has a wedge-shaped cross section. The block fixes the first concrete member to the second broken member to form a small sand wafer process fixing tower—a part of the method has been disclosed, as / The round process fixes the tower itself—as usual. This method involves providing a first silicon The second silicon component has a receiving area suitable for at least partially containing the accessory. The accessory is then secured within the receiving area. A method for assembling a support member for a wafer fabrication tower has been disclosed. The first in this method In the step, the basic form of a long supporting member has been provided. This basic form has a wedge-shaped cross section and angled edges. Next, the edges of the basic form of the supporting member are processed to replace the angled edges with arched edges. Several wafer placement grooves are cut along one side of the basic form of the support member. The basic form of the support member may include a front surface and a rear surface, each of which has at least one corner edge. The basic form of the processing support member The steps of the edges can be completed as the edges of the respective surfaces are machined to a radius between 0 2 5 " (6.3mm) and 5.25 "(1 3 3 · 3mm). In an embodiment, the At least one corner edge can be processed to a radius of about page β. This paper applies the national standard (CMS) A4 specification (210 X 297 mm) ------------- "Packing --- --r --- Order --------- line ---. 1 C Please read the notes on the back before filling out this page) 4576 1 8 A7 Consumption Cooperation between Employees and Intellectual Property Bureau of the Ministry of Economic Affairs. "(38_)" and the main surface has an angular angle of about 0.35, (8.9mmp has the advantage that σ is half of the moxibustion with other support members & the diameter of the front surface is smaller than the radius of the front surface. There are at least one connection structure in the basic form of the supporting member. This connection member q is incorporated to provide at least attachments to become-like planar substrate members. The connection members in the piece can be provided as a pair of cylindrical piles, each -1 In the middle, even the end of this form extends. 〖Self-supporting member base The basic shape of the long supporting member is as follows: It is constructed from inert crystalline materials, such as polycrystalline silicon or single crystalline silicon. Along the basic form of the support member, the side-cutting of several wafers is fixed, and the steps can be performed into several cutting operations. Dupanshi should be perpendicular to the vertical direction of the basic form of the support member. axis. This cutting yields a proper distance extending through the depth of the basic form of the support member. Qin Er. 1 is performed using a circular saw with a coated diamond cutting surface on the blade. The wafer holding groove is thus formed perpendicular to the front surface of the basic form of the supporting member. The supporting structure of the wafer process fixed tower, A Ant, is also disclosed at the same time. This supporting structure contains-the strip has-opposite ends, having a first-half curvature: chess-shaped front surface 'and an arch-shaped rear surface with a second curvature radius. The first radius of curvature is actually smaller than the second radius of curvature. Several parallel wafer mounting grooves are formed on the front surface of the long portion. Qiu In the embodiment, the pair of connecting member structures can be shaped and extended from the ends of the respective supporting members. The connection element is generally cylindrical, and the connection element receiving area is formed as a round countersink and has the same diameter and length as the connection element. Ran [Paper Size (CNS) A-4 Specification ⑵0_ Page 9 x 2 * ^ 7 公 楚) ------------ 『Raid ------ Order --- I- ---- Line J (Please read the notes on the back before filling this page)

Yin Changxiang, an employee consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, whose first and second silicon components, such as rude 镬 w 』, can be formed from monocrystalline silicon, crystalline silicon, or virgin polycrystalline sand.

According to a method of the embodiment, 'fixed and continuous pulling; the step of connecting the L and L pieces can be provided by a first transverse hole in the connecting element and a second transverse hole in the cross-border area. To be done. The first and second transverse south 3 丨 4α 饫 direction holes are coaxial with each other 'and are suitable for fixed pin insertion. Because of this, the first and second holes are coaxial with each other and the straight fixed pins are fixed to the first and second holes. The length of this pin should be slightly longer than that of the first and second holes, 11 Q < length, so that the pin can be firmly fixed in the next method. In + First, the fixed inserts are slightly inserted into the holes arranged in a row, so the-% ton of the fixed inserts extend outward from the outer boundary of the first and second holes. Next, the protruding portion of the fixed bracket M < is inserted into the outer boundary of the first and second holes. In addition — 1U million method, the outer diameter of the fixed pin can be made the same as that of the first and second holes, so that the pin can be firmly fixed in the next method. The first tile has no tiles, and the fixed pins have been frozen to shrink. Then, when the temperature of the hole is maintained at the ambient temperature or higher, the fixed pin is inserted into the lined hole J. Then, when the temperature of the plug returns to the ambient temperature, it will begin to swell. In an alternative eye-catching step, energy can be used on at least one of the connecting objects and the connecting receiving area to melt the connecting elements and the connecting receiving area. In an embodiment, the connection receiving area of the second chopping member is provided with a tunnel hole. Laser energy is used through the channel hole to form an adhesive bond between the connecting element and the receiving area. As another method, the connecting element can be connected to the receiving space. ㈣Energy can be used in the “Adjacent Step” page 10 This paper is sized according to the Chinese National Standard (CMS) A4 (210 X 297 mm) I -------- 111 ^ ----- r --- Order! --I--line J (please read the notes on the back before filling this page) A7 V. Description of the invention (in the area of both the connection element and the connection accommodation space. There are other ~ embodiments, the first ... The τ 珩 silicon member has a circular roof ridge at its end. The sandy member has a | circumferential groove at | i * ji [7-±-. It uses laser energy to make the first silicon member round. The house is called Wang poor tower into the circular groove of the second silicon component. The laser energy is used to heat the roof ridge so that its temperature reaches the melting point of the silicon ⑷6. The molten silicon has filled the circular grooves. In another embodiment, the step of securing the connecting element in the connecting receiving area includes using a kind of adhesive force and treatment between the connecting element and the connecting receiving space. This connection element is generally cylindrical, and the connection receiving area is also formed like a cylindrical hole, and its diameter and length are consistent with the connection element. Shibu __ <} jfa -¾ ^ Silicon components can be made of monocrystalline silicon, polycrystalline silicon, or primary It is formed by multiple crystals. It is stated that the simple and transparent crystalline silicon of the tower-fixed solid-processed circular silicon is shown in Figure 11 Figure ------------------------ r- --Order · -------, line γ (Please read the precautions on the back before filling out this page) Printed by the first legal party of the Intellectual Property Bureau of the Ministry of Economic Affairs's Consumer Cooperatives. The photos of the vegetarian package of this material are shown in Figure 6 and Figures 3 and 4; Examples of side steps in the flow diagram of the flow chart; Shi Zhongcai's actual cuts of the process and the steps of each method are clearly disclosed. This book contains the pictures. The first and the fifth, the eighth, the sixth, the fourth, and the fourth are the materials of the broken axis of the figure. 1 2 1 1 The middle-range pass is generated in the shape of the base piece, and the supporting piece is the end of the figure. The paper size applies to the Chinese National Standard (CNS) A4 specification (210 χ 297 mm) 4578 1 8 A7 _____B7 5 2. Description of the invention () Front view; Figure 13 shows the basic shape of the supporting member A side elevation view of the next stage in the production process; FIG. 14 is a perspective view of the first embodiment incorporating a substrate; FIG. 15 is a side elevation view of the basic form of the supporting member at another stage of the production process; Fig. 16 is a perspective view of a second embodiment combining a pillar and a substrate; Figs. 17 to 23 are cross-sectional views showing a method for firmly fixing a tower part of a silicon wafer process. (Please read the precautions on the back before filling out this page.) Printed reference numbers for printing of employee cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs: 10 Wafer fixed towers 12 Pillars 14 Base plates 16 Slots 20 Materials C1 First plane cutting C2 Second Sub-plane cutting material halves Q1-Q4 materials halving E1- E8 materials halving 30 basic pillar form 32 front surface 34 corner edge 36 rear surface 38 corner edge 40 rounded trapezoidal block 42 slotted pillar 44 Post end 46 Concealed circular wedge-shaped hole 50 Connection structure 52 End 54 Post 56 Concealed cylindrical mortise hole 60 First silicon member 62 Tenon 64 Second silicon member Page 12 This paper size applies to China National Standard (CNS) A4 specifications (210 X 297 mm) Intellectual property of the Ministry of Economic Affairs 曷 618618 for employee consumer cooperation. A. _B7 V. Description of the invention (66) Mortice 70 The first — transverse hole 72 The second transverse tie 74 Fixed pin 7 6 Fixed pin exposed Fen 78 No. — Hole outer line 80 Fixing pin 82 No. — Lateral hole 84 Second transverse hole 88 Channel hole 90 Round ridge 92 Tenon end 94 The detailed description of the invention of the circular groove is as follows: A silicon wafer process fixed tower 10 is shown in FIG. 1 "This silicon wafer process fixed tower 10 includes several long branch members 12, which are hereinafter referred to as The pillars are firmly fixed between a pair of planar substrates 14 and are hereinafter referred to as substrates. A plurality of slots 16 are cut in each pillar 12 and generally have the same pitch 'to support a large number of wafers in the completed tower 100. This tower is usually semi-permanently placed in a semiconductor process reactor and installed for one of several different processes. Various wafers are placed in the tower 10 and then processed simultaneously. The temperature of this process is medium temperature in the range of 400 to 70CTC or high temperature in the range of 1000 to 1 380 ° C. It depends on whether there is any action such as chemical evaporation, annealing, or thermal diffusion. The tower 10 described above has four pillars 12, but three pillars 12 or even two pillars 12 or maybe one pillar 12 are dog-footed. In the most typical case, the pillars connected around the substrate 14 should be slightly larger than 180 ° around the substrate 14. Therefore, the pillars 12 can reliably support the wafer and the wafer can be supported by the robot on its plate. Movement to the line of tower 10

13X This paper size is applicable to China National Standard (CNS) A4 specification (210 X 297 male cage) ------------ dd ----- r --- order ------ --- Line —-, | (Please read the precautions on the back before filling this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 4576 1 8 A7 ---- B7 V. Description of the invention () and straight insertion Slots 1 6 _. The support 12 and the substrate 14 may be joined from an inert crystalline material, such as monocrystalline or polycrystalline silicon, and may be established by any suitable method. Preferably, the support 12 is formed from the original polycrystals with a lower degree of impurities because the support 12 is in direct contact with the wafer. At the same time, the pillar 12 requires considerable length in many applications, and long primordial polycrystals are readily available. However, substrates are traditionally formed of single crystal silicon. Substrate] 4 Traditionally, they are formed into a generally circular shape, and the diameter must be larger than the diameter of the wafer being manufactured. Most of today's wafers have a diameter of & 200mm, but wafers of & 300 have already begun production. Primarily polycrystalline ingots larger than 300mm or even 200mm are not easily available and particularly large cz crystal ingots are available for special manufacturing applications. The assembly of the pillar is divided into two main steps: (丨) the formation of a wedge-shaped basic form: and (2) the basic form is processed into a pillar with a new style cross section. This basic form is processed from a cylindrical material 20 as shown in Figure 2. The material 20 is generally cylindrical, and the length is L and the diameter is. However, it is worth thinking that the present invention is applicable to any available material having virtually any type. The material 20 may be composed of a crystalline material, such as single crystalline or polycrystalline silicon, but the original polycrystalline is currently preferred. Silicon materials are widely used commercially. One suitable silicon material supplier is siliconON INC. The material can be made into any size, but the general length is between 4 ”(10 Cm) and 80” (200 Cm). The diameter is between 0 75, (2⑽) and page 14. This paper size applies Chinese national standards (CNS) A4 specification (210 X 297 mm) ------------ " Shocking --- II --- Order ------- Line 1 (Please read the note on the back first Please fill in this page again) 4576 1 8 A7 B7

V. Description of the invention () Between 36 ”(91cm) of the consumer cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. As shown in Figure 3, the method according to the present invention uses a _ The vertical axis of the material 10 cuts the material into several pieces. In step 22, a first plane cut ci is cut on the material 20. The side sectional view shown in FIG. 4 and the vertical direction shown in FIG. 5 are cut. Sectional view 'The first cut ci extends along the entire length L of the material 20 and is smaller than the full width (ie, the diameter D) of the material π. In step 24 of FIG. 3, cut on the material 20 An additional cut C2 ^ As in the side cross-sectional view shown in FIG. 6 and the longitudinal cross-sectional view shown in FIG. 7, the C2 cut extends in a plane like the first cut C1. If the material 20 has With a relatively small diameter, two cuts are enough to divide the material-= HI _ H2, as shown in 8_. Otherwise, an additional (N-2) C3 to CN cuts are needed, as in 3 As shown in step 26 in the figure, 'το is the first one—divided into one Hl, H2. Generally, the typical material diameter is 3 (76mm). Very good results. However, 0-pressure liquid sectioning has shown its feasibility in cutting a complete piece of material in a single step. Furthermore, single-step cutting with a diamond knife is feasible if the problem of surface polishing can be solved. The cutting of the material 20 can be completed by any appropriate technology. The cutting of the sacral it that is currently under consideration can be efficiently completed by using the Soviet Union, such as the model M4K34F21G manufactured by MK. This type of circle Saw the blade with a diamond-tipped blade, such as part number 10125D22 or i25i100 produced by NaU〇nal Diam〇nd Lab. The 15th through ¥ paper size of the recut material is subject to the Chinese National Standard (CNS) A4 specification 21. X 297 public hair)-------------- ▲ ---- l · --- Order --------- line-. 1 {Please read first Note on the back, please fill out this page again) 4576 1 8 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of invention () In the process, the operating speed of the saw needs to be in the range of 5 Orpm to 50000. Already It was found to be particularly efficient at about 400Orpm. We can understand that circular saws are used in Its effectiveness is for illustration purposes only. What must be considered is another cutting device that can be used to achieve acceptable results. Examples of such devices include (but are not limited to) saws with no diamond face , Laser, wire saw, grinding wheel saw, reciprocating saw and grinding liquid cutting device. Structural support members can often be built by providing a block smaller than half of the I material shown in Figure 8 and H2. In this case, in step 26 of FIG. 3, the above-mentioned added cutting step can be repeated on each of the two pieces to make the original material 20 into four pieces from q1 to q4, as shown in FIG. 9 'Or eight pieces of E1 to E8 as shown in Figure 10. The perspective view shown in Figure π is the final basic pillar form 3 0 to 4 5. Vertex angle. The cutting depth at step 26 has been reduced, so the number of cuts N will also be reduced to 0. The above process can be modified as needed to produce a solid block with a small vertex angle of 90, but an angle of 45 or less Better to reduce shadowing effects. The basic pillar form 30 shown in Figure 11 has a wedge-shaped section. This basic pillar form 30 has a front surface 32 and a corner edge 34 in front of its wedge shape. This basic pillar form 30 has an arched rear surface 36 with a pair of corner edges 38 at the rear of the wedge and two mutually inclined side planes. The steps of the supporting member assembled from the supporting member basic form 30 are shown in Figs. 12 to 14. As shown in Figure 12, 'The first step, page 16, this paper rule applies to the Chinese National Standard (CNS :) A4 size mo X 297 Gongchu------ ----------- Table 1 --- r --- Order ----- 11--line γ (Please read the precautions on the back before filling out this page) Printed by the Employee Consumption Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 457618 A7 — -I · —_ B7______________ V. Description of the invention () 'About the processing of the front and back surfaces of the basic pillar form 3 0 (represented here by dashed lines) to eliminate the corner edges 34 and 38 to form a circular trapezoidal block 40. The surface can be machined to a radius between 0,25 " (6mm) and 5.25, (133mm). In this example, the front surface of the trapezoidal block 40 is processed to a radius of about 0.3 5 " (9mm), and the rear surface is processed to a larger radius, about ^ 5 " (3 The preferred radius ratio of the rear surface to the front surface is at least Yes 3, preferably at least 4 ^ The advantage of this obviously different ratio is that the groove supporting the wafer is cut on the side with a smaller radius, so the wafer is shielded less during the private manufacturing process, and the distance away from the wafer is larger. The radius provides mechanical rigidity. The round wedge in Figure 12 has two further advantages. First, it reduces material loss during processing. Second, there is no sharper (smaller radius) than the front surface of the groove Features. Because sharp angles will cause the accumulation of exfoliated deposits and thus increase the number of particles. That is, the round shape can increase its adhesion to any film deposited on the fixed tower during the wafer process. Another embodiment includes a front All the surfaces of the square-shaped wedge and the square-shaped pillar at the rear are connected by curved parts with the same radius or larger than the front angle of the slot. The radius shown in Figure 12 can be processed by appropriate processing tools. An example of a tool is a gold-plated diamond gouge with a water runner or a diamond-bonded diamond wheel produced by Nationai Diamond Lab. This machining tool has been found to be compatible with National Diamond Lab. 1Ding for resin-bonded diamond wheels, the processing tool will achieve efficient results when used at the same time. Once the basic pillar 40 has been processed, several wafer support grooves 16 can be used. Page 17 This paper applies Chinese national standards ( CNS) A4 specification (210 X 297 mm) --------- I --- l ^ i ---!-丨 _ 丨 order --------- line {Please read first Note on the back, please fill in this page again) 4 6 7 6 1 Α7 Β7 Printed by the Consumer Property Cooperative, Member of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (as shown in Figure 13). The groove 16 is formed along the basic support 40 One side is cut (here the front surface) to form all groove supports 4 2. The grooves I 6 are parallel to each other and perpendicular to the longitudinal axis A of the basic pillar form 36 in Fig. 13. The grooves 16 are along the length l Partially extended but avoiding the end length E. The slot 16 may extend beyond or less than half the depth D of the basic form of the support member, depending on the requirements of the particular application Decided. Although the above grooves 6 have two flat and parallel faces, more complex shapes may be more advantageous and easier to form using standard machining techniques. The grooves 16 may be formed by any suitable diamond tool, such as Commercial diamond ore cutter. An example of a more suitable cutting device is a 3 "to 4" resin gluing wheel produced by National Diamond Lab. This grooving machine is used in conjunction with a diamond-covered cutting surface Particularly efficient > For example, 16 grit to 400 grit blades produced by National Diamond Lab. The speed of the grooving machine during the grooving 16 can be controlled within a range from $ r pm to 12500 rpm. We found that it was particularly efficient at speeds around 4500 rpm. We must understand that the use of specific and efficient cutting tools is for illustration only. Consideration must be given to alternative cutting equipment to achieve acceptable results. Examples of this equipment include, but are not limited to, cutting machines using diamond-free blades, laser and abrasive liquid cutting devices. There are two different designs to connect the pillar 12 and the base plate 14. As shown in the side elevational view shown in FIG. 13 and the perspective view shown in FIG. 14, the slotted strut 42 has a round building shape in which its cross section extends to the end 44 except for the slot 16. On the two opposite substrates 丨 4, the concealed eighteenth paper rule M, which is fitted with each other, is used in Zhongguanjia Standard (CNS) A4i " (2.i () χ 29``public $ --- 11 1-- -^ Table --------- Order ------ 1! Line γ < {Please read the notes on the back before filling out this page) 457 6 18 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs System A7 B7 V. Description of the invention () The round-shaped hole 46 accommodates the round wedge-shaped end of the strut 42. This design provides the advantage of increased rotational rigidity. Another design is the side elevation view of FIG. Perspective view 'at least one connecting structure 50 is processed on each end 52 of a pillar 54. This connecting structure 50 is like a pair of opposing cylindrical seals. This lamp is formed by processing the basic form 30 of the supporting member " This process can be redundant with any suitable cutting machine. An example of a suitable cutting equipment such as a vertical or horizontal grinder, or a CNC machine, is manufactured by a company such as NOVA, JET, or PRESTO. The connection structure 50 is designed for building It is convenient for the pillar 54 and the flat substrate 14 having the same hidden cylindrical mortise hole 56 to be joined to each other. However, The connection structure 50 in its form is also possible, such as the leaf shape and the corresponding groove shape in the substrate. We can further understand that the pillar can be connected to the substrate by any appropriate method. The completed pillar 22 can be manufactured into various desired Size. For example, the above pillar can come from the basic pillar form. It has a width of about 0475, (12mm), a length of about 45 "(1 14mm), and a wedge-shaped angle of about 22.60". The groove 16 has a depth of about 0.25 (6 mm) in this embodiment, and extends about 43 (109 cm) along the length of the pillar 22 (although it can be extended longer). The cylindrical nail 50 is formed. The connection structure in FIG. 16 extends from the end of the pillar 54 to a length of about 0.6 '' (15 mm), and its diameter is about 0.00 mm). Various techniques for fixing the pillars to the substrate are described in Figures 17 to 23. As shown in Fig. 17, the first silicon member 60 in each example is shown here as a supporting member 'equipped with an outwardly extending connecting element or tongue 62. However, it must be understood that the tenon 62 may be used by the first silicon member 60 on page 19 of this paper. The standard of China Paper (CNS) A4 (210 X 297 public love) ---- I ---- ! '·'-^ — Order ·! (Please read the notes on the back before filling out this page)

Line J Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 457618 A7

Outer edge line 78. Another firm technique is shown in Figure 18. A fixed pin 80 has an outer diameter D1 substantially equal to the inner diameter d2 of the first and second holes 82, 84 in the mortise 62 and in the portion of the second silicon member 64 adjacent to the mortise 66. In this example, the fixed pin 80 is frozen at a low temperature to about _] 0 (rc, which causes the contraction of the fixed pin 80. Next, when the hole is maintained at the ambient temperature, the cooled fixed pin 80 is inserted into a row One of the holes 8 2 and 8 4. Then, the fixed pin 80 starts to expand as it returns to ambient temperature. The diameter of the fixed pin shrinks by about 0.01% when frozen at low temperature. It becomes another combination of fixed pin Technology, energy can be used for tenon, page 20 This paper is scaled _ National National Standard < CNS) A4 size (210 X 297 mm) One " 11 !! *-4 · I 1 I --- 1 Order ill! —-- 4 (Please read the notes on the back before filling out this page) 4576 1 8 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (mortise or both to fuse the tenon to A mortise. An example of this technique is shown in Figures 9 and 9. In this example, a channel hole 88 is drilled into the second silicon member 64 to the bottom of the mortise 66. Laser energy is used to pass through the channel hole 88 at the tenon. An adhesive weld w is formed between 62 and the mortise 66. It has been found that the laser energy is 25 watts and has a wave 3 0ns and a wave period of 0.001s irradiated for 1 to 5 minutes can achieve the most favorable effect. Any suitable source of laser energy can be used, such as Coherent's C02 laser. Another combination method description In the cross-sectional view of Figure 20. In this example, the tenon 62 and the tenon 66 extending through the second silicon member have a common space. The laser energy is used between the tenon 66 and the tenon 62 Interface area A 1 to form an adhesive weld that extends to all or part of the interface A1. Any suitable source of laser energy can be used. Examples of further steps in Figures 21 and 22 In the middle, the tenon 62 extends through the second silicon member 64 and includes a circular ridge 90 at its end 92. The second silicon member 64 includes a circular groove 94 surrounding the end of the tenon 66. The thermal energy is used The circular ridge 90 of the first silicon member 60 is melted into the circular groove 94 of the second silicon member 64, so that the tenon 62 and the sample eye are fused. Any suitable heat source can be used for heating. It has been found that The underutilized heat source is the heat generated by the laser energy. Use Radiation energy ^ The hot ridge is 90 to more than the start point of the second, it is best to reach the temperature ° C for about 3 minutes, or until the silicon melts and fills the circular groove 22 shown in the figure. Figure 23. In this example, the fixed page 21 of this paper applies the Chinese National Standard (CNS) A4 specification (210 X 297 foot) —-1 — I l · II 1 t 1 — 1 Sleep 1 — — • 1 , (Please read the precautions on the back before filling this page) 457 6 1 8 A7 B7 Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs ΗConsumer Cooperatives V. Description of the invention () The steps of the tenon 62 within the tenon 66 include the tenon And the longitudinal axis extension area A2 between the mortise holes α is coated with an adhesive ... to avoid the pollution often associated with the use of the adhesive 'the high temperature, non-polluting adhesive should be used. The connecting element described in heading 17i23 is generally cylindrical, and the receiving area of the connecting element is also a cylindrical hole. However, we must understand that these shapes are for demonstration purposes only, and we must choose any suitable matching shape for the connecting element and the associated receiving area. The above-mentioned various fixing methods are not only used for assembling wafer fixing towers, but also can be used for other structures that require two or more silicon blocks to be firmly combined. In order to complete the tower 10 as shown in FIG. 1, one of the above-mentioned firm methods must be applied to each pillar 12 and each base plate 14; however, there are other feasible firm methods. Β four pillars 12 are the best; three The supporting pillars 12 are sufficient, and even two supporting pillars 12 are competent. The mortise is in the position where the holes of the two substrates 14 are at the same angle, and the angle is slightly greater than 80. . The extra space provided by the slot 16 should allow the robot to slide the wafer horizontally into the tower 10 by sliding into the slot 16, and it is best not to be caught by the sides of the slot 16 during the insertion process. Moreover, it is firmly supported on the bottom surface of the groove 16. Although the substrate 14 is a continuous and symmetrical circle as shown in FIG. 1, the & For example, they may include external plates and internal holes. Furthermore, although the substrate is preferably made of a single junction material, it is possible to combine a plurality of parts together to form a multi-component substrate. In this case, the use of the original polycrystals on the substrate becomes more accurate. Page 22 This paper size applies the Zhongguan Standard (CNS) A4 specification (21G X 297). I ---- I ---! 1 " · ---- r I--Order --------- Line N (Please read the notes on the back before filling out this page) 457 6 1 Printed by A7, Consumer Cooperatives, Intellectual Property Bureau, Ministry of Economic Affairs B7 V. Explanation of Invention () In the above-mentioned embodiment, the 'grooves are cut in the floor pillars. However, the invention is not so limited. Other types of pillars and wafer support are possible, such as a silicon arm protruding from a cylindrical or square pillar and supporting the wafer at its end. The present invention makes it possible to manufacture single crystalline silicon, polycrystalline silicon, or the original polycrystalline structural members used in semiconductor wafer production and the like, and is used for any large size and / or complex fixed tower or part of Miaojing Round processing. The use of structural members for component parts is consistent with the elimination of deformation in high temperature processing applications of the present invention. Because the raw materials have the same quality as the crystal family, the known materials, such as after-dream compounds, have inherent particles;: defective, and crystal slipping has been virtually eliminated. Furthermore, there is no shading problem, as the raw materials provide key constants for one-to-one physical property replication and processing of the wafer. Single-continuous fixed towers and parts made from widely used materials such as quartz or dream carbide provide unachievable tolerances and expected useful lives. This invention can

Enabling the manufacture of silicon parts and fixed towers can provide its advantages to allow the industry to increase wafer diameters to 300 mm and larger. Although the present invention has been described with reference to specific embodiments, those skilled in the art will understand that changes can be made to this. Without departing from the field and spirit of the present invention. Page 23 The paper size applies to the Chinese national standard ¥ icNS) A4 specification (^^ 7 ^ ------------ installation ---- order! ---- line ^. · &Quot;- Please read the notes on the back before filling out this page}

Claims (1)

4 5 7 6 1 Α8 Β8 C8 D8 6. Scope of patent application1. A silicon tower supporting several wafers, the tower contains at least two. Two substrates composed of silicon; and a plurality of original polycrystals The first pillar is fixed at the two ends to the two substrates and is provided with a plurality of movable supporting wafers. 2. According to the silicon tower described in item 1 of the scope of the patent application, each pillar on the ground has a plurality of grooves cut on the first side. It is used as a support to cut multiple crystals. Round and slide the wafer into the groove. 3. The silicon tart described in the patent application Fanyuan Item 2, " each of the above pillars is formed according to the cross-sectional shape of the pillar including the shape of the radius side of the $ -radial curve 'the pillar shape of the other The partial curvature radius is not smaller than the first radius. Item 3 Di Wei Li Zhuan, Yi Si Shen Ru 4 pairs of opposite diameters, diameters, diameters, diameters, diameters, diameters, diameters, diameters, and diameters. 1UJ . I-shaped curved line I of the tower of the first tower of the Scout I ------------.! II I --- «— I11III1 < Please read the notes on the back before filling in (This page) Member of the Intellectual Property Bureau of the Ministry of Economic Affairs, Consumer Cooperation, Du Duan, said that the 4th section of the above description should be included in the description of Baogan Tower Silicon. Ο The application surface of the special slot is as described on the side of the 5-shaped pillar support. On the side of the middle surface, _ Taste the silicon should be described on the 3 sides of the phase surface on the second side of the surface, and the surface should be flat. Please include the application package 6 ears 2 Λ first cent ί 129 X 1 (210 Grid || S Ν (c Moderate rule papers for the junior and senior citizens in the country A8 B8 C8 D8 4576 1 8 VI. Scope of patent application 7. The silicon tower 'as described in item 3 of the patent application park further includes a cylindrical hole formed in the base plate and has the shape of the pillar to accommodate the pillar. (Please read the precautions on the back before filling this page) 8. According to the broken tower described in item 3 of the scope of patent application, the shape of the above pillars is non-circular, and each of the above pillars is formed at its two ends The cylindrical nail further includes a cylindrical hole formed in the substrate to accommodate the cylindrical nail. 9. The tower according to item 3 of the scope of patent application, wherein the shape of the above pillars is non-circular. 10. The silicon tower described in item 9 of the scope of patent application, further comprising a hole formed in the base plate having the non-circular shape to accommodate the pillar. 1 1. The silicon tower according to item 1 of the scope of patent application, wherein each of the above substrates is composed of original polycrystalline silicon. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 1 2. The silicon tower described in item 1 of the scope of patent application, wherein each of the above substrates is composed of Czochralski-generated sand. 1 3. A silicon tower that supports several wafers, which includes: two substrates, each substrate including a plurality of parts joined together and composed of an original polycrystal; and an original polycrystalline silicon Consisting of multiple first pillars and applying the Chinese National Standard (CNS) A4 specification (210 X 297 mm) on both pages of this page 25. 8 05892 AKCD Intellectual Property Bureau, Ministry of Economic Affairs, Consumer Consumption, Du Print 6. Application The patent scope end is fixed to the two substrates and is provided with a plurality of wafers supporting mobility. 14 The silicon tower according to item 13 of the patent application Fangu, wherein each of the pillars mentioned above includes a plurality of grooves cut on one side to support the wafers and slide the wafers into the In the slot. 1. A supporting member of a fixed tower for a wafer process, comprising: a silicon strip body whose cross-sectional shape includes an arched front surface having a first radius of curvature and a flat or relatively flat surface with respect to the front surface. The first curvature radius is larger than the second curvature radius, the other surface of the shape has a curvature radius smaller than the first curvature radius, and a plurality of parallel wafers formed on the front surface of the shape are placed groove. 1 6. The support member according to item 15 of the patent application park, wherein the above rear surface is a government policy. The ratio of the second radius to the first radius is at least 3 = 1. 7. The supporting member according to item 5, wherein the rear surface is a flat surface. 18. The supporting member according to item 15 of the scope of patent application, wherein the above-mentioned silicon member is composed of original polycrystals. The 26th edition of the paper is applicable to the Zhongguanjia Standard (CNS) A4 specification (210 X 297 meals) -------------------------- Order --- ------ Line j Γ% Read the back ¾v'iit matters before filling out this page) 1576 1 AS B8 C8 D8 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs and applied for patent scope 19. 15. The supporting member according to item 15, wherein the second member is composed of an early crystal dream. 2 0. A method for fixing a first silicon component to a second silicon component to form at least one part of a silicon wafer process fixing tower, the method includes the following steps: providing the first silicon component with an outwardly protruding Part; providing a second silicon member and a connecting element accommodating area so that it can at least partially surround the outwardly protruding portion; placing the outwardly protruding portion into the connecting element accommodating area; and securing the outwardly protruding portion in the connecting element accommodating area Inside, the step of securing includes using energy to fuse the outwardly protruding portion to the connecting element accommodating area at least in one of the outwardly protruding portion and the connecting element accommodating area. 2 1. The method according to item 20 of the scope of patent application, wherein the step of using energy includes the use of laser energy. 22. The method according to claim 20 of the scope of patent application, wherein the above-mentioned connection element receiving area includes a beveled angle around the hole for receiving the outwardly protruding portion. 23. The method as described in item 20 of the scope of patent application, wherein the above-mentioned outwardly protruding portion includes a portion extending beyond the accommodating area of the connecting element so that the page 27 (please read the precautions on the back before filling this page) Standards apply to China National Standard (CNS) A4 (210 X 297 mm) 、 Applicable patent scope: Consumption cooperation by employee of Intellectual Property Bureau of the Ministry of Economic Affairs, Du printed 4576 U A8 B8 C8 D8 __ 々 When using this energy, it can be melted to fuse with the connection accommodation area. Method 'wherein the above-mentioned first and fA UI · —silicon components are formed of a material selected from the group consisting of monocrystalline Czochralski-generated silicon, polycrystalline Czochralski-generated fragments, and original polycrystalline silicon. 2 5 »The method described in item 24 of the scope of patent application, wherein at least one of the above-mentioned first and second silicon components is composed of original polycrystalline silicon. 2 6 -4 tb _ σ The method described in the scope of patent application No. 20, wherein the above-mentioned step of using the amount includes the use of lightning rays at a temperature higher than 1 4 1 6 ° C to brighten this outward protrusion Of the components. 27. The method described in item 20 of the scope of the patent application, wherein the outwardly protruding portion of the above-mentioned first element is a general cylindrical outwardly protruding connection member, and the connection element receiving area is formed in the second A cylindrical hole in the silicon member is used to receive the outwardly protruding portion. 28. The method according to item 20 of the scope of patent application, wherein the first silicon member has a non-circular shape and the outwardly protruding portion and the connection receiving area have the non-circular shape. Page 28 This paper size is in accordance with Chinese National Standard lCNS) A4 (210 X 297 mm) _ ---------------------------- -(Please read the notes on the back before filling this page)