TW457557B - Semiconductor wafer and its manufacturing method - Google Patents
Semiconductor wafer and its manufacturing method Download PDFInfo
- Publication number
- TW457557B TW457557B TW088118650A TW88118650A TW457557B TW 457557 B TW457557 B TW 457557B TW 088118650 A TW088118650 A TW 088118650A TW 88118650 A TW88118650 A TW 88118650A TW 457557 B TW457557 B TW 457557B
- Authority
- TW
- Taiwan
- Prior art keywords
- gas
- single crystal
- semiconductor
- resistivity
- main surface
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 199
- 238000004519 manufacturing process Methods 0.000 title claims description 40
- 239000000758 substrate Substances 0.000 claims abstract description 169
- 239000013078 crystal Substances 0.000 claims abstract description 93
- 238000006243 chemical reaction Methods 0.000 claims abstract description 76
- 239000010409 thin film Substances 0.000 claims abstract description 68
- 238000000034 method Methods 0.000 claims abstract description 27
- 239000002994 raw material Substances 0.000 claims abstract description 26
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 136
- 238000009826 distribution Methods 0.000 claims description 47
- 239000010408 film Substances 0.000 claims description 43
- 230000002079 cooperative effect Effects 0.000 claims description 10
- 238000005259 measurement Methods 0.000 claims description 6
- 238000012856 packing Methods 0.000 claims description 2
- 239000007789 gas Substances 0.000 abstract description 263
- 239000002019 doping agent Substances 0.000 abstract description 37
- 229910052710 silicon Inorganic materials 0.000 abstract description 10
- 239000010703 silicon Substances 0.000 abstract description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 9
- 235000012431 wafers Nutrition 0.000 description 59
- 238000001947 vapour-phase growth Methods 0.000 description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- 239000004576 sand Substances 0.000 description 12
- 230000007423 decrease Effects 0.000 description 10
- 238000012545 processing Methods 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- 230000005855 radiation Effects 0.000 description 8
- 239000012159 carrier gas Substances 0.000 description 6
- 238000001816 cooling Methods 0.000 description 5
- 229910021419 crystalline silicon Inorganic materials 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 230000002265 prevention Effects 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000012808 vapor phase Substances 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 229910003822 SiHCl3 Inorganic materials 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910003910 SiCl4 Inorganic materials 0.000 description 1
- 229910003818 SiH2Cl2 Inorganic materials 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000005202 decontamination Methods 0.000 description 1
- 230000003588 decontaminative effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/2205—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32603398 | 1998-10-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW457557B true TW457557B (en) | 2001-10-01 |
Family
ID=18183360
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW088118650A TW457557B (en) | 1998-10-29 | 1999-10-28 | Semiconductor wafer and its manufacturing method |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US6454854B1 (de) |
| EP (1) | EP1043764A4 (de) |
| JP (1) | JP3671418B2 (de) |
| KR (1) | KR100680122B1 (de) |
| TW (1) | TW457557B (de) |
| WO (1) | WO2000026949A1 (de) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000138168A (ja) * | 1998-10-29 | 2000-05-16 | Shin Etsu Handotai Co Ltd | 半導体ウェーハ及び気相成長装置 |
| US6444027B1 (en) | 2000-05-08 | 2002-09-03 | Memc Electronic Materials, Inc. | Modified susceptor for use in chemical vapor deposition process |
| DE60127252T2 (de) * | 2000-05-08 | 2007-12-20 | Memc Electronic Materials, Inc. | Epitaktischer siliziumwafer frei von selbstdotierung und rückseitenhalo |
| EP1393361A2 (de) * | 2001-05-30 | 2004-03-03 | ASM America, Inc. | Beladen und wärmebehandeln bei niedriger temperatur |
| WO2003106908A1 (en) * | 2002-06-15 | 2003-12-24 | Solios Thermal Limited | Electromagnetic induction apparatus and method of treatment of molten materials |
| US7112509B2 (en) * | 2003-05-09 | 2006-09-26 | Ibis Technology Corporation | Method of producing a high resistivity SIMOX silicon substrate |
| TW200528589A (en) * | 2004-02-17 | 2005-09-01 | Nikko Materials Co Ltd | Vapor-phase deposition method |
| US7205216B2 (en) * | 2004-07-29 | 2007-04-17 | International Business Machines Corporation | Modification of electrical properties for semiconductor wafers |
| US7910494B2 (en) * | 2006-03-29 | 2011-03-22 | Tokyo Electron Limited | Thermal processing furnace, gas delivery system therefor, and methods for delivering a process gas thereto |
| US8278176B2 (en) | 2006-06-07 | 2012-10-02 | Asm America, Inc. | Selective epitaxial formation of semiconductor films |
| US7789965B2 (en) | 2006-09-19 | 2010-09-07 | Asm Japan K.K. | Method of cleaning UV irradiation chamber |
| US7759199B2 (en) | 2007-09-19 | 2010-07-20 | Asm America, Inc. | Stressor for engineered strain on channel |
| US7871937B2 (en) | 2008-05-16 | 2011-01-18 | Asm America, Inc. | Process and apparatus for treating wafers |
| US8367528B2 (en) | 2009-11-17 | 2013-02-05 | Asm America, Inc. | Cyclical epitaxial deposition and etch |
| JP5565131B2 (ja) * | 2010-06-22 | 2014-08-06 | 株式会社デンソー | 半導体製造装置 |
| US9885123B2 (en) | 2011-03-16 | 2018-02-06 | Asm America, Inc. | Rapid bake of semiconductor substrate with upper linear heating elements perpendicular to horizontal gas flow |
| US8809170B2 (en) | 2011-05-19 | 2014-08-19 | Asm America Inc. | High throughput cyclical epitaxial deposition and etch process |
| JP2015018960A (ja) * | 2013-07-11 | 2015-01-29 | 三菱電機株式会社 | 半導体装置の製造方法 |
| US11414759B2 (en) * | 2013-11-29 | 2022-08-16 | Taiwan Semiconductor Manufacturing Co., Ltd | Mechanisms for supplying process gas into wafer process apparatus |
| CN111575675A (zh) * | 2019-02-15 | 2020-08-25 | 北京北方华创微电子装备有限公司 | 一种半导体设备 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5936927A (ja) | 1982-08-25 | 1984-02-29 | Hitachi Ltd | 半導体気相成長装置 |
| JP2783037B2 (ja) | 1992-02-18 | 1998-08-06 | 日本電気株式会社 | 気相シリコンエピタキシャル成長装置 |
| JP2790009B2 (ja) * | 1992-12-11 | 1998-08-27 | 信越半導体株式会社 | シリコンエピタキシャル層の成長方法および成長装置 |
| US5444217A (en) * | 1993-01-21 | 1995-08-22 | Moore Epitaxial Inc. | Rapid thermal processing apparatus for processing semiconductor wafers |
| JP3042335B2 (ja) * | 1994-10-25 | 2000-05-15 | 信越半導体株式会社 | 気相成長方法及びその装置 |
| JP2701767B2 (ja) * | 1995-01-27 | 1998-01-21 | 日本電気株式会社 | 気相成長装置 |
| JP3725598B2 (ja) | 1996-01-12 | 2005-12-14 | 東芝セラミックス株式会社 | エピタキシャルウェハの製造方法 |
| JP2000138168A (ja) * | 1998-10-29 | 2000-05-16 | Shin Etsu Handotai Co Ltd | 半導体ウェーハ及び気相成長装置 |
-
1999
- 1999-10-28 TW TW088118650A patent/TW457557B/zh not_active IP Right Cessation
- 1999-10-28 JP JP2000580239A patent/JP3671418B2/ja not_active Expired - Fee Related
- 1999-10-28 US US09/582,408 patent/US6454854B1/en not_active Expired - Lifetime
- 1999-10-28 EP EP99952799A patent/EP1043764A4/de not_active Ceased
- 1999-10-28 KR KR1020007007209A patent/KR100680122B1/ko not_active IP Right Cessation
- 1999-10-28 WO PCT/JP1999/005969 patent/WO2000026949A1/ja active IP Right Grant
-
2002
- 2002-08-23 US US10/226,122 patent/US6746941B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP1043764A1 (de) | 2000-10-11 |
| US6454854B1 (en) | 2002-09-24 |
| EP1043764A4 (de) | 2004-05-26 |
| US6746941B2 (en) | 2004-06-08 |
| KR100680122B1 (ko) | 2007-02-07 |
| WO2000026949A1 (fr) | 2000-05-11 |
| US20030001160A1 (en) | 2003-01-02 |
| KR20010033686A (ko) | 2001-04-25 |
| JP3671418B2 (ja) | 2005-07-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW457557B (en) | Semiconductor wafer and its manufacturing method | |
| TW452859B (en) | Semiconductor wafer and vapor phase growth apparatus | |
| US6245647B1 (en) | Method for fabrication of thin film | |
| JP4948628B2 (ja) | エピタキシャルに被覆されたシリコンウェハの製造方法 | |
| JP6009237B2 (ja) | エピタキシャルシリコンウェーハの製造方法、および、エピタキシャルシリコンウェーハ | |
| JP3042335B2 (ja) | 気相成長方法及びその装置 | |
| CN109937468B (zh) | p型SiC外延晶片及其制造方法 | |
| US5096534A (en) | Method for improving the reactant gas flow in a reaction chamber | |
| US20030219981A1 (en) | Process and apparatus for epitaxially coating a semiconductor wafer and epitaxially coated semiconductor wafer | |
| US5044315A (en) | Apparatus for improving the reactant gas flow in a reaction chamber | |
| JP2023042593A (ja) | ＳｉＣエピタキシャルウェハ | |
| JP2015002286A (ja) | エピタキシャルウェーハの製造方法及びその製造装置 | |
| JPH01253229A (ja) | 気相成長装置 | |
| JP6924593B2 (ja) | エピタキシャルウェーハの製造方法 | |
| CN111128696A (zh) | 外延硅晶片的制造方法及外延硅晶片 | |
| JP2020126885A (ja) | 成膜装置及び成膜方法 | |
| JP7448076B2 (ja) | ＳｉＣエピタキシャルウェハ | |
| JP2004134625A (ja) | 半導体装置の製造方法と製造装置 | |
| JPS6235516A (ja) | 半導体装置の製造方法 | |
| JPH06244109A (ja) | 化合物半導体の気相成長方法 | |
| JPS5913699A (ja) | 半導体気相成長方法 | |
| JPH07321055A (ja) | エピタキシャル成長装置及びエピタキシャル成長方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |