TW445554B - Flip chip bump bonding - Google Patents

Flip chip bump bonding Download PDF

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Publication number
TW445554B
TW445554B TW089103182A TW89103182A TW445554B TW 445554 B TW445554 B TW 445554B TW 089103182 A TW089103182 A TW 089103182A TW 89103182 A TW89103182 A TW 89103182A TW 445554 B TW445554 B TW 445554B
Authority
TW
Taiwan
Prior art keywords
layer
solder
buffer layer
ubm
photoresist mask
Prior art date
Application number
TW089103182A
Other languages
English (en)
Inventor
Yinon Degani
Dean Paul Kossives
Original Assignee
Lucent Technologies Inc
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Filing date
Publication date
Application filed by Lucent Technologies Inc filed Critical Lucent Technologies Inc
Application granted granted Critical
Publication of TW445554B publication Critical patent/TW445554B/zh

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
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  • Manufacturing & Machinery (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Wire Bonding (AREA)

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44555 4 at ______B7 五、發明說明（1 ) 發明領域 (請先閱讀背面之注意事項再填寫本頁) 一般而言，本發明與電子組裝技術有關，更明確地說 ，與以焊塊將I C晶片及之類物安裝於互連之基底’例如 矽、陶瓷或印刷電路板上有關 發明背景 電子裝置的製造已廣泛使用焊塊互連技術電氣連接組 件的封裝以及將其安裝於互連基底（例如印刷電路板）上 。互連基底包括數種型式的電子裝置支撐基底，包括矽及 陶瓷。爲便於說明，在本文中所討論的支撐基底是印刷電 路板。 現代化的組件封裝要既小且輕，且要可以使用細微圖 案的焊塊表面黏裝到印刷電路板上。典型上，焊塊或接墊 是成形在印刷電路板上，且組件封裝上有對應配對的陣歹[J 。加熱鎔化焊料以構成焊接與互連以完成組裝。此技術是 使用倒裝式晶片技術，組件封裝內之I C晶片的表面上配 置有接墊或焊塊，且晶片是面朝下黏裝於印刷電路板上。 經濟部智慧財產局員工消費合作社印製 在組裝前，焊塊先成彤在I /〇接墊陣列上。爲便於 定位或選擇性地施加焊料到接墊陣列，接墊的表面必須可 被焊料浸濕（wettable)。因此，要在組件上要被接合的焊接 位置上配置焊塊下金屬（under bump metallization,UBM )。 接著將焊料，典型上是以錫爲主的焊料，例如錫一鉛、錫 一銻、施加於U B Μ。 在IC晶片及互連基底上施加焊塊的方法愈來愈多。 -4 - 本紙張尺度適用中國國家標準（CNS)A4規格（210 « 297公爱） 445554 A7 _______B7_____ 五、發明說明（2 ) (請先閱讀背面之注意事項再填寫本頁) 最普通的方法是透過網板或印刷模板印刷焊糊的圖案，接 著移開模板並回流焊料。以相同的方法，但不使用焊糊， 透過一遮罩將焊料蒸鍍到U B Μ上。在這兩種情況中，當 爲順應愈來愈小的互連間距而不斷縮小模板或遮罩的特徵 尺寸時’可靠度的問題也跟著增加。一般來說，模板及遮 罩技術的極限爲焊塊的間距在大約2 0 0微米或以上。 使用較厚的光阻圖案並將焊料蒸鍍到圖案上，接著去 除不需要的部分，這樣可以製造出較細的圖案。不過，在 大基底或板上蒸鍍均勻的層*需要昂貴的設備，以外，一 般來說只限使用含鉛量高的焊料以得到合理的蒸鍍速率^ 使用電解液或無電解的方法電鍍焊料可以得到細微間 距陣列的焊塊。兩種技術都要使甩光學製版術定義焊塊， 且可以製造精密的配置、細線及焊塊等圖案。不過，使用 電解液或無電解的方法會發生其它的可靠度問題。它們需 要非常淸潔的處理環境，以及極度淸潔、電氣活性的基底 表面，這些都增加了成本與製程複雜度- 經濟部智慧財產局員工消費合作社印製 近來提出的焊塊施加方法，以簡單的焊糊技術，結合 細特徵與精密的光學製版術。在成形定義焊塊位置的 UBM之後，基底被覆以厚光阻層。接著曝光焊塊圖案並 顯影光阻，留下厚的遮罩圖案°在光阻遮罩中所開的孔要 比所需的焊塊尺寸大，以烘足夠的焊料容積從焊糊形成最 後的焊塊。以習用的方法將焊糊施加到光阻遮罩中的開孔 中。加熱焊糊以回流’焊塊即自對準僅可供浸濕的表面’ 即UBM。接著去除光阻。由於有光阻遮罩’因此可避免 -5- 本紙張尺度適用中國画家標準（CMS)A4規格（210 =< 297公a ) 44555 4 A- A/ ______B7____ 五、發明說明（3 ) (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 過量的焊料回流與橋接的危險=使用此種技術，可以製造 出間距小於2 0 0微米且可靠度高的焊塊。不過，此技術 的缺點是在焊塊成形後，要去除光阻遮罩很困難。這是因 爲在回流步驟期間’由於熱使得與光阻發生交鏈。當使用 高鎔點的焊料時’此情況更加明顯。在熱與光的雙重影響 下，預聚合物（prepolymei:)材料發生交鏈爲吾人所知。 在光學製版術中使用預聚合物材料，因此，在光化性的曝 光下將會發生某程度的交鏈。此程度足以使得被曝光材料 強固到可做爲光罩，但仍允許在稍後的處理中被去除。如 果光阻材料的交鏈超過設計的水準，就很難將其去除。如 果光阻材料所受到的熱處理比設計値嚴重，光阻材料會彤 成黏固的被覆物。因此可想見，焊料回流步驟期間留在原 處的光阻遮罩傾向發生過量的交鏈，以致很難去除。此外 ，在典型的應用中，要施加焊塊的I C晶片表面上塗布有 一層覆蓋層，通常是聚醯亞胺。光阻聚合物加熱後將黏在 聚醯亞胺上，甚至與其發生交鏈，如何去除光阻但不侵害 到I C的覆蓋層是一大問題。在很多情況，濕溶劑並不適 用。光阻的乾蝕，即灰化，將更爲有效，但乾蝕對顯影及 硬化之光阻與覆蓋層間的選擇性不佳。當此焊塊製程應用 在環氧樹脂-玻璃的互連基底上時，也會發生相同問題。 發明槪述 現已發展出解決上述光阻製程與焊塊製程不相容之問 題的技術。按照此技術，一緩衝層介於I C或互連基底與 本紙張尺度適用令囷圉家標準（CNS)A4規格（21〇χ 297公* ) -6 - W 445554 ： 五、發明說明（4 ) (請先閱讀背面之注t事項再填寫本頁) 光阻層間。緩衝層以金屬薄層爲佳’它可防止光阻與與下 層表面間的黏著。緩衝層很容易沈積也很容易去除。它保 護下層，並允許使用有效的技術（如使用電漿乾蝕）去除 光阻。在較佳實施例中’成形緩衝層的步驟與成形U B Μ 合而爲一。 圖式簡單說明 圖1 _ 1 2的槪圖顯示光阻遮罩與焊塊成形之增進技 術的製程步驟。 元件對照表 11: I C晶片基底 1 2 :場氧化物 1 3 :鋁接點 1 4 :覆蓋層 2 1 :鈦層 2 2 :鉻/銅層 2 3 :銅層 經濟部智慧財產局員工消費合作社印製 2 4 :選用層 3 1 :蝕罩 5 1 :光阻遮罩 5 2 :窗口 6 1 :刮刀 6 2 :焊糊 本紙張尺度適用令固國家標準（CNS>A4規格（210 * 297公爱） 4 4555 4 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（5 ) 7 1 :焊塊 8 1 :基底表面 9 1 :緩衝層 9 2 :光阻遮罩 詳細說明 現請參閱圖1 ，部分的I C晶片基底、場氧化物及鋁 接點分別位在1 1 ' 1 2及1 3。聚醯亞胺的覆蓋層以 1 4表示。熟悉此方面技術之人士應瞭解，圖中並非是按 比例繪製。焊接位置1 3可以是層間金屬互連或基底接點 ，例如源、汲的窗口。下方半導體結構的細節並未顯示， 因爲這些不是本發明的重點。本發明的目的是在鋁焊接位 置1 3的表面提供一焊球或焊塊。由於焊料不會浸濕鋁接 點，因此，焊塊作業的第一步是成形UBM。UBM所使 用的金屬應包括與鋁黏附良好的層，以及能被典型錫焊料 配方浸濕的層。能符合這些要求的層結構是鈦、鉻及銅的 組合。 先沈積鈦•黏附於鋁，接著在鈦上沈積鉻/銅，最後 在鉻/銅上沈積銅I以提供可被焊料浸濕的表面。鉻/銅 提供鈦層與銅層間有效的過渡層。焊料合金會溶解銅且從 鈦去浸濕。因此，直接在鈦上的銅薄層將溶解到鎔融的焊 料中，接著焊料將從鈦層去浸濕。爲確保焊料與u B Μ間 介面的整體性1典型上會在鈦層與銅層間使用一鉻與銅的 合金層。另者，UBM也可包括鉻、鉻/銅、銅。也可使 (請先閱讀背面之注意事項再填寫本頁) -t .線_ 本紙張尺度適用中國國家標準（CNS)A4規格<210 X 297公釐） * Q - v “555 4 A7 B7 五、發明說明（6 ) 用其它的U BM材料。 上述各層習用濺射法成形，沈積它們有數種方法可供 選擇。鉻-銅層可濺射自合金靶，或先使用鉻耙濺射，接 著改用銅靶。 多層的U B Μ順序沈積形成如圖2所示的層結構。在 較佳實施例中1各層是在包含鈦靶、鉻靶及銅靶的濺射裝 置中濺射成形。濺射是習用的技術，在本描述中不再對其 詳細描述。也可使用其它沈積金屬層的技術，例如蒸鍍或 電鑛" 第一層2 1是鈦，厚度大約500-5000Α，以 1 000 - 3 000Α爲佳。鈦與鋁接點1 3及聚醯亞胺 的覆蓋餍間黏附性良好。它也不會被典型的焊料合金浸濕 。這是很重要的特性，稍後即可明白。 第二層2 2是薄的鉻/銅過渡層，提供鈦層與後續成 形的銅層間冶金上的穩固介面，且可被焊料浸濕。層2 2 最好是以濺射成形，厚度大約1 0 0 0 — 5 0 0 0 A ，以 2000-3000A爲佳。 經濟部智慧財產局員工消費合作社印製 接下來的層2 3是銅層，厚度大約1 0 0 0 -100〇0A ，以 2000 — 6000A 爲佳。銅層 23 可被焊塊一般所使用的焊料浸濕。銅與錫焊料共鎔的鎔點 較低，銅層表面在焊接溫度即溶解到焊塊中，構成物理與 電氣上的穩固結合。即使所有的銅都溶解到焊料層中，焊 料仍可浸濕鉻/銅層並與其黏附。 圖2顯示一選用的金層2 4，可以施加於銅層表面， -9- *---------—---* —— (請先閱讀背面之沈意事項再填寫本頁) -線· 本紙張尺度適用中國固家標準（CNS)A4规格（210 X 297公爱） A7 445554 _B7____ 五、發明說明（7 ) 以防止銅層表面氧化。選用之金層2 4的厚度大約5 0 0 -3000A，以 1000 — 2000A 爲佳。 (請先閱讀背面之注意事項再填寫本頁) 如圖3所示，施加一蝕罩3 1以遮住焊塊區。蝕罩最 好是習用的光阻，且成形的方法是在表面層上濺射光阻， 並以適當的光化輻射對其製作圖案。圖3顯示已製作完成 的光罩3 1。另者，遮罩技術也可以使用例如氧化物的硬 罩》 使用位於金層2 4 (如果有）上的光罩，以習用的蝕 劑蝕刻銅層2 3。金的蝕劑包括氰化鉀/氰化鐵溶液，碘 化物/碘溶液，以及王水。銅的蝕劑例如氯化鐵或硫酸與 鉻酸鉀的混合物。在不破壞上方銅層的情況下繼續進行銅 /鉻層2 2的蝕刻步驟。適合的蝕劑是以氫氧化鈉與氰化 鐵鉀爲基本溶液，添加銅的複合劑，例如氫氧化銨，以防 止形成鈍化層。 熟悉此方面技術之人士應瞭解，上述的技術是負製程 ’與1 9 9 7年4月2日提出的美國專利申請案0 8/ 8 2 5 ，9 2 3中所描述的相同。其它的多層UBM技術 也可使用，例如使用遮罩定義U B Μ接墊。 經濟部智慧財產局員工消費合作社印製 按本發明的實施例，鈦層2 1留在原處做爲障層。如 圖4所示。 接著使用習用的光阻技術施加光罩。成形光罩的方法 是在表面上濺射光阻，並以適當的光化輻射在光阻上製作 圖案。在圖5中，光罩位在5 1所示之處=它的圖案露出 U ΒΜ，並提供足夠的焊糊容積以形成所要大小的焊塊。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱) -10: '44555 4 A7 B7 五、發明說明（8 ) <請先閱讀背面之注意事項再填寫本頁) 典型上，當焊糊回流成焊料時，體積大約縮小5 0 %。因 此，在光罩上之窗口 5 2的面積，乘上光罩的高度或厚度 ’應該大約等於所要的焊糊體積，且是焊塊體積的兩倍》 假設焊塊大致上是球形，1 〇 〇微米（直徑）的焊塊需要 大約3 3 m i 1 3的焊糊。在焊塊與光罩間留下一間隙有利 於光阻的去除，並提供遮罩開孔一合理的寬深比。開孔寬 度（直徑）與焊球寬度（直徑）的適當比例是1 . 1 -2 . 0。從以上的假設得知，光罩開孔（焊糊）的體積是 焊塊體積的兩倍，光罩的厚度爲t ，光罩中開孔的直徑爲 d i，相關焊塊的直徑大約爲d2，則： ^(di/2)2t-2C4X3)?r(d2)3 如果d ! = 1 . 1 — 2 . 〇 d 2，則可化簡爲t =( 0.33-l.l)d2。 接著使用標準程序將焊糊塡入光罩中的開孔5 2。圖 6說明此步驟，圖中顯示使用一習用的刮刀6 1施加焊糊 。刮刀6 1只是施加焊糊6 2之各種適用方法中的一種（ 很明顯並未按比例繪製）。 經濟部智慧財產局員工消費合作社印製 圖7顯示焊料回流後的焊塊7 1 »回流的條件與所使 用的焊糊而異。例如使6 3/6 7的錫/鉛或9 5/5的 錫/鉛，典型上的熱處理是加熱3分鐘到達低於液化溫度 大約1 5 °C，接著再加熱3 0秒，到達高於液化溫度大約 2 0 - 3 0 °C，接著快速冷卻（大約2分鐘）到室溫。在 一般回流條件下，光罩5 1中的聚合物將歷經另一次的交 鏈，且將更硬化與更黏附於聚醯亞胺層1 4。圖7的結構 -11 - 本紙張尺度適用中囷固家標準（CNS)A4規格（210 X 297公釐） 445554 Α7 Β7 經濟部智慧財產局員工消費合作社印制^ 五、發明說明（9 ) 中因爲有緩衝層21而使上述情況得以避免。可以使用習 用的光阻濕溶劑將光罩去除，例如P R S 1 0 0 0加熱到 5 ◦ °C ，接著以標準電漿蝕刻去除殘餘的聚合物。除非有 緩衝層2 1 ，否則電漿蝕刻一般會侵蝕到下方的聚醯亞胺 層1 4。因此，由於有緩衝層的存在，因此可以使用較強 的光阻去除步驟，且不會破壞下方的基底。此可以將光阻 完全去除。 在去除光罩之後，接著使用焊塊與UB Μ做爲遮罩將 緩衝層2 1蝕離。蝕離緩衝層以使用標法的濕蝕法爲佳。 若爲鈦，可以使用1:3的水/乙二醇中加入2.5%的 H F將緩衝層去除。所得到的結構如圖8所示，基底表面 8 1非常乾淨。 還有其它成形緩衝層的方法。較佳且最具成本效益的 方法是緩衝層與U ΒΜ —體成形，如上所述。選擇鈦層做 爲緩衝層，因爲焊料不會浸濕鈦。此特性很重要，且表面 張力致成如圖7所示的焊塊。很明顯，此方法需要緩衝層 能導電，因爲它做爲UBM的一部分。不過，也可以使用 不導電的緩衝層，緩衝層是選擇性地施加|以露出UBM 。另一選擇是在基底上鍍非浸濕的金屬，並在施加焊糊光 阻遮罩前，或在施加焊糊光阻遮罩之後使用光學製版術露 出UBM，在此例中，可以使用焊糊遮罩去除UBM區域 的緩衝層材料。如圖9 — 1 2所示。 圖9顯示圖3下一步驟的結構，光罩3 1仍在原位置 。鈦層2 1在早先的實施例中被保留下做爲緩衝層，但在 [L---------嗦 i (請先閱讀背面之注意事項再填寫本頁) . |線_ 本紙張尺度適用中國國家標準（CNSM4規格（210 * 297公笼） -12- 445554 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（ίο ) 本例中與其它層2 2 - 2 4 —起蝕離。這是以負方法成形 U B Μ的一般程序。 接著沈積緩衝層9 1覆蓋整個表面，如圖1 〇所示 此層以使用非浸濕材料爲佳。本文所使用的”非浸濕”材 料一詞，是指材料不會被焊料浸濕。適用的材料包括鋁、 鈦、鉬、鎢。層9 1的厚度較不重要。然而它的厚度要厚 到足以做爲緩衝層，但要薄到很容易去除。〇 . 1 — 5微 米的範圍較適當。接著施加焊糊光阻遮罩9 2 ，如圖1 1 所示。以遮罩9 2蝕離露出的緩衝層9 1 。如果是鋁，例 如可以使用H F或p A E濕蝕。所得到的結構如圖1 2所 示’在光阻遮罩層9 2下有緩衝層9 1。接下來的製程已 在前文中討論。 如上所述，使用焊糊光阻遮罩製作緩衝層圖案很方便 ，且可節省製程成本。不過，當在去除厚的焊糊遮罩時， 覆蓋層會暴露在與圖1 2有關的製程步驟中 > 可能會發生 損壞的情形。因此，在某些例中，較佳的方法是在製作緩 衝層9 1的圖案時，使用單獨的光阻步驟，僅露出UBM 。在此例的結構中，外觀很像圖1 2 ，但緩衝層會蓋住覆 蓋層。 實例 使用 Sputtered Films 公司的 Endeavor cluster tool 沈積 UBM層21-24。接著以習用的光學製版術對已被覆的晶圓製 作圖案。將晶圓置入YES蒸氣打底烤爐中以黏著促進劑（例 (請先閱讀背面之沒意事項再填寫本頁) 4 _ 線 本紙張尺度適用中國國家標準（CNS>A4规格（21〇χ 297公釐） -13- 445554 A7 B7 經濟部智慧財產局員工消費合作社印製 玉、發明說明（11 ) 如HMDS)處理5分鐘。接著在MTI Flexifab track上旋附5 微米的AZ4620光阻，並在100 °C中軟烤（softbaked ) 1分鐘 。使用G C A縮小投影曝光系統曝光以製作圖案（時間： 30秒，或大約200毫焦耳），並以AZ400k顯影 劑顯影（時間2分鐘）。在進行蝕刻前，晶圓先在電熱板 上以1 3 0 °C硬烤（hardbaked ) 2分鐘。接著蝕刻銅與鉻 /銅層，並去除光阻。接著使用上述的光阻程序施加焊糊 光阻遮罩，並使用習用的刮刀將焊糊施加到已製作圖案的 遮罩中。焊糊光阻遮罩的厚度大約1 〇 〇微米，供塡入焊 糊的開孔直徑大約1 6 0微米。接著在熱氮氣中回流以形 成焊塊，直徑大約1 20微米。接著在PRS 1 〇〇〇中 以1 0 0°C 3 0分鐘以去除光阻，接著以電漿去除殘餘的 光阻°接著使用1/3的水/二乙醇中加入2 . 5%HF 的溶液蝕離鈦層。所得到的晶圓即具有選擇性施加的 U BM及焊塊，其四週的表面非常乾淨。 熟悉此方面技術之人士可對本發明做各種附加的修改 。所有與本說明書之特定教導間的差異，基本上都是靠本 發明的原理及它們的相等物，這些都是在本發明所描述及 申請專利範圍的範圍內。 I -------1 — — — — — — — # * I I (請先閱讀背面之注意事項再填寫本頁) 訂，- ;線
T 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -14-

Claims (1)

  1. d4555 4 as B8 C8 一一 D3 六、申請專利範闻 1 . ~種將i c晶片焊接到一支撐基底上的方法，該 I C晶片具有一覆蓋層，在該覆蓋層上具有複數個鋁質的 焊接位置，其步驟包括： (a )在鋁焊接位置上選擇性地施加焊塊下金屬（ U B Μ )， (b )在該覆蓋層上沈積一緩衝層* (c )對該緩衝層製作圖案以露出該UBM至少一部 分， (d )在該緩衝層上成形光阻遮罩，該光阻遮罩覆蓋 該覆蓋層，它的開孔部分露出該U BM， (e )以焊糊塡充光阻遮罩的該開孔部分， (f )回流該焊糊，以在該U B Μ上形成焊塊， (g)去除該光阻遮罩，以及 (h )去除該緩衝層。 2 .如申請專利範圍第1項的方法，其中部分的該緩 衝層是該U BM的一部分， 3 .如申請專利範圍第2項的方法，其中該UBM是 層狀結構，包括至少兩金靨層，且至少其中之一的該金屬 層延伸覆蓋於該覆蓋層形成該緩衝層。 4 ·如申請專利範圍第3項的方法，其中該UBM是 層狀結構，包括鈦、鉻/銅、銅，且鈦層延伸於整個該覆 蓋層上以形成該緩衝層。 5 .如申請專利範圍第1項的方法，其中該覆蓋層是 聚醯亞胺。 (請先閱讀背面之注意事項再填寫本頁) >---- 經濟部智慧財產局員工消費合作钍印製 h°J II - n n m β ^^1 ί i - a^i I I 1^1 - - n : I I - f— n . 本紙張尺度適用中國0家標準<CNS)A4規格（210x297公釐〉 -15- 4 45 5 5 4 as C8 D8 六、申請專利範$ 6 · —種將I C晶片焊接到一支撐基底上的方法，該 I C晶片具有一覆蓋層，在該覆蓋層上具有複數個鋁質的 焊接位置，其步驟包括： (a )施加一金屬緩衝層覆蓋I C晶片， (b )在緩衝層上施加一 UBM層， (c )對U B Μ層製作圖案，以蓋住至少部分的該鋁 焊接位置，留下該緩衝層的部分露出； (d )在該緩衝層上成形光阻遮罩，該光阻遮罩的開 孔部分露出該U BM層， (e )以焊糊塡充光阻遮罩的開孔部分， (f )回流該焊糊，以在該UBM上形成焊塊， (g)去除該光阻遮罩，以及 (h )去除該緩衝層露出的部分。 7 .如申請專利範圍第6項的方法，其中緩衝層的材 料不會被焊料浸濕。 8. 如申請專利範圍第6項的方法’其中該光阻遮罩 的開孔部分露出圍繞於該U BM層四周周邊區域的該緩衝 層。 9. 一種將IC晶片焊接到一支撐基底上的方法’該 I C晶片具有一覆蓋層，在該覆蓋層上具有複數個鋁質的 焊接位置，其步驟包括： (a )在鋁焊接位置上選擇性地施加焊塊下金屬（ U B Μ )， (b )在該I C晶片及該UBM上毯狀沈積一金屬層 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 I In If - n 1 n I 1 1 1^1 n tf n .^1 n n n n I ^1- J 本紙張尺度適用中國國家標準（CNS)A4規格（210 * 297公釐） -16- ,145 5 5 4 Α8 Β8 C8 D8 六、申請專利範圍 1 (C )在該金屬層上成形一層製作有圖案的光阻遮罩 ’其上的開孔露出該UBM上的該金屬層， (d )使用該製作有圖案的光阻遮罩做爲蝕罩，將該 U β Μ上的該金屬層部分蝕離， (e )以焊糊塡充光阻遮罩的開孔部分， (f )回流該焊糊，以在該U Β Μ上形成焊塊， (g)去除該光阻遮罩，以及 (h )去除該金屬層。 1 〇 .如申請專利範圍第9項的方法，其中第一 U BM層的材料不會被焊料浸濕。 1 1 .如申請專利範圍第1 〇項的方法’其中該覆蓋 層包括聚醯亞胺。 1 2 .如申請專利範圍第9項的方法’其中該光阻遮 罩的開孔部分露出圍繞於該U Β Μ層四周周邊區域的該緩 衝層。 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 '^--------訂丨 ί n n —J I I n n n u n n I ϋ i n ϋ n n n tF —J n n * 本紙張尺度適用中國國家楳準（CNS)A4規格（210 * 297公t) -17-
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