TW434325B - Chemical vapor deposition (CVD) apparatus - Google Patents
Chemical vapor deposition (CVD) apparatus Download PDFInfo
- Publication number
- TW434325B TW434325B TW086110541A TW86110541A TW434325B TW 434325 B TW434325 B TW 434325B TW 086110541 A TW086110541 A TW 086110541A TW 86110541 A TW86110541 A TW 86110541A TW 434325 B TW434325 B TW 434325B
- Authority
- TW
- Taiwan
- Prior art keywords
- gas
- reaction
- reaction gas
- container
- flow
- Prior art date
Links
- 238000005229 chemical vapour deposition Methods 0.000 title 2
- 239000012495 reaction gas Substances 0.000 claims abstract description 73
- 239000007789 gas Substances 0.000 claims abstract description 68
- 238000006243 chemical reaction Methods 0.000 claims abstract description 63
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 238000010926 purge Methods 0.000 claims abstract description 30
- 230000000717 retained effect Effects 0.000 claims abstract description 4
- 230000007246 mechanism Effects 0.000 claims description 20
- 230000002079 cooperative effect Effects 0.000 claims description 4
- 238000010574 gas phase reaction Methods 0.000 claims description 2
- 210000000170 cell membrane Anatomy 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- 230000008021 deposition Effects 0.000 abstract description 12
- 230000014759 maintenance of location Effects 0.000 abstract description 7
- 239000010409 thin film Substances 0.000 abstract description 6
- 239000010408 film Substances 0.000 description 39
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 19
- 238000000151 deposition Methods 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 7
- 238000001179 sorption measurement Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000012212 insulator Substances 0.000 description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 230000000875 corresponding effect Effects 0.000 description 4
- 239000000428 dust Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 230000002441 reversible effect Effects 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 102000002322 Egg Proteins Human genes 0.000 description 1
- 108010000912 Egg Proteins Proteins 0.000 description 1
- 229910010165 TiCu Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 210000004681 ovum Anatomy 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 229910052704 radon Inorganic materials 0.000 description 1
- SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 235000015170 shellfish Nutrition 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45519—Inert gas curtains
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45568—Porous nozzles
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32114496A JP3925566B2 (ja) | 1996-11-15 | 1996-11-15 | 薄膜形成装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW434325B true TW434325B (en) | 2001-05-16 |
Family
ID=18129301
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW086110541A TW434325B (en) | 1996-11-15 | 1997-07-24 | Chemical vapor deposition (CVD) apparatus |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US6103304A (enExample) |
| JP (1) | JP3925566B2 (enExample) |
| KR (1) | KR100272849B1 (enExample) |
| TW (1) | TW434325B (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111863589A (zh) * | 2019-04-24 | 2020-10-30 | 北京北方华创微电子装备有限公司 | 吹扫方法及结构、沉积工艺及进气系统 |
| CN119779683A (zh) * | 2025-01-10 | 2025-04-08 | 中国矿业大学 | 一种视窗可更换的控温控压定容弹 |
Families Citing this family (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5254212A (en) * | 1990-09-13 | 1993-10-19 | Hitachi Metals, Ltd. | Method of fabricating electrostrictive-effect device |
| JP2000049216A (ja) * | 1998-07-28 | 2000-02-18 | Mitsubishi Electric Corp | プラズマ処理装置および当該装置で用いられる静電チャック吸着方法 |
| US6450117B1 (en) * | 2000-08-07 | 2002-09-17 | Applied Materials, Inc. | Directing a flow of gas in a substrate processing chamber |
| US6508919B1 (en) * | 2000-11-28 | 2003-01-21 | Tokyo Electron Limited | Optimized liners for dual damascene metal wiring |
| US6949450B2 (en) * | 2000-12-06 | 2005-09-27 | Novellus Systems, Inc. | Method for integrated in-situ cleaning and subsequent atomic layer deposition within a single processing chamber |
| US6416822B1 (en) | 2000-12-06 | 2002-07-09 | Angstrom Systems, Inc. | Continuous method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD) |
| WO2002045871A1 (en) * | 2000-12-06 | 2002-06-13 | Angstron Systems, Inc. | System and method for modulated ion-induced atomic layer deposition (mii-ald) |
| US6878402B2 (en) * | 2000-12-06 | 2005-04-12 | Novellus Systems, Inc. | Method and apparatus for improved temperature control in atomic layer deposition |
| US6428859B1 (en) | 2000-12-06 | 2002-08-06 | Angstron Systems, Inc. | Sequential method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD) |
| US7378127B2 (en) | 2001-03-13 | 2008-05-27 | Micron Technology, Inc. | Chemical vapor deposition methods |
| US6697079B2 (en) * | 2001-03-15 | 2004-02-24 | Apple Computer, Inc. | Color palette providing cross-platform consistency |
| US7348042B2 (en) | 2001-03-19 | 2008-03-25 | Novellus Systems, Inc. | Continuous method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD) |
| JP4236882B2 (ja) * | 2001-08-01 | 2009-03-11 | 東京エレクトロン株式会社 | ガス処理装置およびガス処理方法 |
| EP1454346B1 (en) * | 2001-10-18 | 2012-01-04 | Chul Soo Byun | Method and apparatus for chemical vapor deposition capable of preventing contamination and enhancing film growth rate |
| KR100443598B1 (ko) * | 2001-11-05 | 2004-08-09 | 주성엔지니어링(주) | Ｃｖｄ 장치 |
| US7229666B2 (en) * | 2002-01-22 | 2007-06-12 | Micron Technology, Inc. | Chemical vapor deposition method |
| US6866746B2 (en) * | 2002-01-26 | 2005-03-15 | Applied Materials, Inc. | Clamshell and small volume chamber with fixed substrate support |
| US6787185B2 (en) * | 2002-02-25 | 2004-09-07 | Micron Technology, Inc. | Deposition methods for improved delivery of metastable species |
| KR100476788B1 (ko) * | 2002-05-14 | 2005-03-16 | 주성엔지니어링(주) | Ｍｏｃｖｄ시스템 |
| US7468104B2 (en) * | 2002-05-17 | 2008-12-23 | Micron Technology, Inc. | Chemical vapor deposition apparatus and deposition method |
| US6887521B2 (en) * | 2002-08-15 | 2005-05-03 | Micron Technology, Inc. | Gas delivery system for pulsed-type deposition processes used in the manufacturing of micro-devices |
| KR100505367B1 (ko) * | 2003-03-27 | 2005-08-04 | 주식회사 아이피에스 | 박막증착용 반응용기 |
| TW200508413A (en) * | 2003-08-06 | 2005-03-01 | Ulvac Inc | Device and method for manufacturing thin films |
| US7374099B2 (en) * | 2004-02-24 | 2008-05-20 | Sun Microsystems, Inc. | Method and apparatus for processing an application identifier from a smart card |
| KR101063197B1 (ko) * | 2004-06-25 | 2011-09-07 | 엘지디스플레이 주식회사 | 액정표시장치 제조용 플라즈마 화학기상증착장치 |
| US20070105768A1 (en) * | 2004-11-10 | 2007-05-10 | Rajiv Nayar | Dry recombinant human alpha 1-antitrypsin formulation |
| KR20060076714A (ko) * | 2004-12-28 | 2006-07-04 | 에이에스엠지니텍코리아 주식회사 | 원자층 증착기 |
| US7615061B2 (en) | 2006-02-28 | 2009-11-10 | Arthrocare Corporation | Bone anchor suture-loading system, method and apparatus |
| JP5176358B2 (ja) * | 2007-03-27 | 2013-04-03 | 東京エレクトロン株式会社 | 成膜装置及び成膜方法 |
| TWI349720B (en) * | 2007-05-30 | 2011-10-01 | Ind Tech Res Inst | A power-delivery mechanism and apparatus of plasma-enhanced chemical vapor deposition using the same |
| WO2009006415A1 (en) | 2007-06-29 | 2009-01-08 | Kfi Intellectual Properties L.L.C. | Method for extracting oil from a water and solids composition, method for the production of ethanol, and ethanol production facility |
| US8118946B2 (en) | 2007-11-30 | 2012-02-21 | Wesley George Lau | Cleaning process residues from substrate processing chamber components |
| US9695510B2 (en) * | 2011-04-21 | 2017-07-04 | Kurt J. Lesker Company | Atomic layer deposition apparatus and process |
| US9741575B2 (en) * | 2014-03-10 | 2017-08-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | CVD apparatus with gas delivery ring |
| JP5837962B1 (ja) * | 2014-07-08 | 2015-12-24 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法およびガス整流部 |
| KR102405123B1 (ko) * | 2015-01-29 | 2022-06-08 | 삼성디스플레이 주식회사 | 표시 장치의 제조 장치 및 표시 장치의 제조 방법 |
| CN113445029A (zh) * | 2020-03-25 | 2021-09-28 | 拓荆科技股份有限公司 | 双面沉积设备及方法 |
| CN115011948A (zh) * | 2022-08-05 | 2022-09-06 | 拓荆科技(北京)有限公司 | 改善薄膜颗粒度装置及其气体输送方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5000113A (en) * | 1986-12-19 | 1991-03-19 | Applied Materials, Inc. | Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process |
| JPS6429974A (en) * | 1987-07-24 | 1989-01-31 | Nec Corp | Document displaying method |
| JPH07116609B2 (ja) * | 1987-11-13 | 1995-12-13 | 富士通株式会社 | 化学気相成長装置 |
| DD274830A1 (de) * | 1988-08-12 | 1990-01-03 | Elektromat Veb | Vorrichtung zur gasphasenbearbeitung von scheibenfoermigen werkstuecken |
| JPH02222134A (ja) * | 1989-02-23 | 1990-09-04 | Nobuo Mikoshiba | 薄膜形成装置 |
| JPH03268320A (ja) * | 1990-03-19 | 1991-11-29 | Toshiba Corp | 光ｃｖｄ装置 |
| JP2763222B2 (ja) * | 1991-12-13 | 1998-06-11 | 三菱電機株式会社 | 化学気相成長方法ならびにそのための化学気相成長処理システムおよび化学気相成長装置 |
-
1996
- 1996-11-15 JP JP32114496A patent/JP3925566B2/ja not_active Expired - Lifetime
-
1997
- 1997-07-24 TW TW086110541A patent/TW434325B/zh not_active IP Right Cessation
- 1997-08-30 KR KR1019970044447A patent/KR100272849B1/ko not_active Expired - Lifetime
-
1999
- 1999-09-13 US US09/394,899 patent/US6103304A/en not_active Expired - Lifetime
- 1999-09-13 US US09/394,900 patent/US6085690A/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111863589A (zh) * | 2019-04-24 | 2020-10-30 | 北京北方华创微电子装备有限公司 | 吹扫方法及结构、沉积工艺及进气系统 |
| CN119779683A (zh) * | 2025-01-10 | 2025-04-08 | 中国矿业大学 | 一种视窗可更换的控温控压定容弹 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3925566B2 (ja) | 2007-06-06 |
| KR100272849B1 (ko) | 2000-12-01 |
| JPH10147880A (ja) | 1998-06-02 |
| US6085690A (en) | 2000-07-11 |
| KR19980041859A (ko) | 1998-08-17 |
| US6103304A (en) | 2000-08-15 |
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