JP3925566B2 - 薄膜形成装置 - Google Patents

薄膜形成装置 Download PDF

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Publication number
JP3925566B2
JP3925566B2 JP32114496A JP32114496A JP3925566B2 JP 3925566 B2 JP3925566 B2 JP 3925566B2 JP 32114496 A JP32114496 A JP 32114496A JP 32114496 A JP32114496 A JP 32114496A JP 3925566 B2 JP3925566 B2 JP 3925566B2
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JP
Japan
Prior art keywords
gas
gas introduction
reaction
reaction vessel
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP32114496A
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English (en)
Japanese (ja)
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JPH10147880A5 (enExample
JPH10147880A (ja
Inventor
茂 水野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
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Canon Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Anelva Corp filed Critical Canon Anelva Corp
Priority to JP32114496A priority Critical patent/JP3925566B2/ja
Priority to TW086110541A priority patent/TW434325B/zh
Priority to KR1019970044447A priority patent/KR100272849B1/ko
Publication of JPH10147880A publication Critical patent/JPH10147880A/ja
Priority to US09/394,899 priority patent/US6103304A/en
Priority to US09/394,900 priority patent/US6085690A/en
Publication of JPH10147880A5 publication Critical patent/JPH10147880A5/ja
Application granted granted Critical
Publication of JP3925566B2 publication Critical patent/JP3925566B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45568—Porous nozzles

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
JP32114496A 1996-11-15 1996-11-15 薄膜形成装置 Expired - Lifetime JP3925566B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP32114496A JP3925566B2 (ja) 1996-11-15 1996-11-15 薄膜形成装置
TW086110541A TW434325B (en) 1996-11-15 1997-07-24 Chemical vapor deposition (CVD) apparatus
KR1019970044447A KR100272849B1 (ko) 1996-11-15 1997-08-30 Cvd장치
US09/394,899 US6103304A (en) 1996-11-15 1999-09-13 Chemical vapor deposition apparatus
US09/394,900 US6085690A (en) 1996-11-15 1999-09-13 Chemical vapor deposition apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP32114496A JP3925566B2 (ja) 1996-11-15 1996-11-15 薄膜形成装置

Publications (3)

Publication Number Publication Date
JPH10147880A JPH10147880A (ja) 1998-06-02
JPH10147880A5 JPH10147880A5 (enExample) 2004-11-04
JP3925566B2 true JP3925566B2 (ja) 2007-06-06

Family

ID=18129301

Family Applications (1)

Application Number Title Priority Date Filing Date
JP32114496A Expired - Lifetime JP3925566B2 (ja) 1996-11-15 1996-11-15 薄膜形成装置

Country Status (4)

Country Link
US (2) US6103304A (enExample)
JP (1) JP3925566B2 (enExample)
KR (1) KR100272849B1 (enExample)
TW (1) TW434325B (enExample)

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US5254212A (en) * 1990-09-13 1993-10-19 Hitachi Metals, Ltd. Method of fabricating electrostrictive-effect device
JP2000049216A (ja) * 1998-07-28 2000-02-18 Mitsubishi Electric Corp プラズマ処理装置および当該装置で用いられる静電チャック吸着方法
US6450117B1 (en) * 2000-08-07 2002-09-17 Applied Materials, Inc. Directing a flow of gas in a substrate processing chamber
US6508919B1 (en) * 2000-11-28 2003-01-21 Tokyo Electron Limited Optimized liners for dual damascene metal wiring
US6949450B2 (en) * 2000-12-06 2005-09-27 Novellus Systems, Inc. Method for integrated in-situ cleaning and subsequent atomic layer deposition within a single processing chamber
US6416822B1 (en) 2000-12-06 2002-07-09 Angstrom Systems, Inc. Continuous method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
WO2002045871A1 (en) * 2000-12-06 2002-06-13 Angstron Systems, Inc. System and method for modulated ion-induced atomic layer deposition (mii-ald)
US6878402B2 (en) * 2000-12-06 2005-04-12 Novellus Systems, Inc. Method and apparatus for improved temperature control in atomic layer deposition
US6428859B1 (en) 2000-12-06 2002-08-06 Angstron Systems, Inc. Sequential method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
US7378127B2 (en) 2001-03-13 2008-05-27 Micron Technology, Inc. Chemical vapor deposition methods
US6697079B2 (en) * 2001-03-15 2004-02-24 Apple Computer, Inc. Color palette providing cross-platform consistency
US7348042B2 (en) 2001-03-19 2008-03-25 Novellus Systems, Inc. Continuous method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
JP4236882B2 (ja) * 2001-08-01 2009-03-11 東京エレクトロン株式会社 ガス処理装置およびガス処理方法
EP1454346B1 (en) * 2001-10-18 2012-01-04 Chul Soo Byun Method and apparatus for chemical vapor deposition capable of preventing contamination and enhancing film growth rate
KR100443598B1 (ko) * 2001-11-05 2004-08-09 주성엔지니어링(주) Ｃｖｄ 장치
US7229666B2 (en) * 2002-01-22 2007-06-12 Micron Technology, Inc. Chemical vapor deposition method
US6866746B2 (en) * 2002-01-26 2005-03-15 Applied Materials, Inc. Clamshell and small volume chamber with fixed substrate support
US6787185B2 (en) * 2002-02-25 2004-09-07 Micron Technology, Inc. Deposition methods for improved delivery of metastable species
KR100476788B1 (ko) * 2002-05-14 2005-03-16 주성엔지니어링(주) Ｍｏｃｖｄ시스템
US7468104B2 (en) * 2002-05-17 2008-12-23 Micron Technology, Inc. Chemical vapor deposition apparatus and deposition method
US6887521B2 (en) * 2002-08-15 2005-05-03 Micron Technology, Inc. Gas delivery system for pulsed-type deposition processes used in the manufacturing of micro-devices
KR100505367B1 (ko) * 2003-03-27 2005-08-04 주식회사 아이피에스 박막증착용 반응용기
TW200508413A (en) * 2003-08-06 2005-03-01 Ulvac Inc Device and method for manufacturing thin films
US7374099B2 (en) * 2004-02-24 2008-05-20 Sun Microsystems, Inc. Method and apparatus for processing an application identifier from a smart card
KR101063197B1 (ko) * 2004-06-25 2011-09-07 엘지디스플레이 주식회사 액정표시장치 제조용 플라즈마 화학기상증착장치
US20070105768A1 (en) * 2004-11-10 2007-05-10 Rajiv Nayar Dry recombinant human alpha 1-antitrypsin formulation
KR20060076714A (ko) * 2004-12-28 2006-07-04 에이에스엠지니텍코리아 주식회사 원자층 증착기
US7615061B2 (en) 2006-02-28 2009-11-10 Arthrocare Corporation Bone anchor suture-loading system, method and apparatus
JP5176358B2 (ja) * 2007-03-27 2013-04-03 東京エレクトロン株式会社 成膜装置及び成膜方法
TWI349720B (en) * 2007-05-30 2011-10-01 Ind Tech Res Inst A power-delivery mechanism and apparatus of plasma-enhanced chemical vapor deposition using the same
WO2009006415A1 (en) 2007-06-29 2009-01-08 Kfi Intellectual Properties L.L.C. Method for extracting oil from a water and solids composition, method for the production of ethanol, and ethanol production facility
US8118946B2 (en) 2007-11-30 2012-02-21 Wesley George Lau Cleaning process residues from substrate processing chamber components
US9695510B2 (en) * 2011-04-21 2017-07-04 Kurt J. Lesker Company Atomic layer deposition apparatus and process
US9741575B2 (en) * 2014-03-10 2017-08-22 Taiwan Semiconductor Manufacturing Co., Ltd. CVD apparatus with gas delivery ring
JP5837962B1 (ja) * 2014-07-08 2015-12-24 株式会社日立国際電気 基板処理装置、半導体装置の製造方法およびガス整流部
KR102405123B1 (ko) * 2015-01-29 2022-06-08 삼성디스플레이 주식회사 표시 장치의 제조 장치 및 표시 장치의 제조 방법
CN111863589A (zh) * 2019-04-24 2020-10-30 北京北方华创微电子装备有限公司 吹扫方法及结构、沉积工艺及进气系统
CN113445029A (zh) * 2020-03-25 2021-09-28 拓荆科技股份有限公司 双面沉积设备及方法
CN115011948A (zh) * 2022-08-05 2022-09-06 拓荆科技(北京)有限公司 改善薄膜颗粒度装置及其气体输送方法
CN119779683A (zh) * 2025-01-10 2025-04-08 中国矿业大学 一种视窗可更换的控温控压定容弹

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JPH02222134A (ja) * 1989-02-23 1990-09-04 Nobuo Mikoshiba 薄膜形成装置
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Also Published As

Publication number Publication date
KR100272849B1 (ko) 2000-12-01
JPH10147880A (ja) 1998-06-02
US6085690A (en) 2000-07-11
KR19980041859A (ko) 1998-08-17
US6103304A (en) 2000-08-15
TW434325B (en) 2001-05-16

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