TW430903B - Silicon wafer, and method of manufacturing the same - Google Patents

Silicon wafer, and method of manufacturing the same

Info

Publication number
TW430903B
TW430903B TW086103680A TW86103680A TW430903B TW 430903 B TW430903 B TW 430903B TW 086103680 A TW086103680 A TW 086103680A TW 86103680 A TW86103680 A TW 86103680A TW 430903 B TW430903 B TW 430903B
Authority
TW
Taiwan
Prior art keywords
silicon wafer
layer
gettering
manufacturing
same
Prior art date
Application number
TW086103680A
Other languages
English (en)
Inventor
Shoichi Takamizawa
Norihiro Kobayashi
Original Assignee
Shinetsu Handotai Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Handotai Kk filed Critical Shinetsu Handotai Kk
Application granted granted Critical
Publication of TW430903B publication Critical patent/TW430903B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/977—Thinning or removal of substrate
TW086103680A 1996-03-28 1997-03-24 Silicon wafer, and method of manufacturing the same TW430903B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8099370A JPH09266212A (ja) 1996-03-28 1996-03-28 シリコンウエーハおよびその製造方法

Publications (1)

Publication Number Publication Date
TW430903B true TW430903B (en) 2001-04-21

Family

ID=14245662

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086103680A TW430903B (en) 1996-03-28 1997-03-24 Silicon wafer, and method of manufacturing the same

Country Status (4)

Country Link
US (1) US5970365A (zh)
EP (1) EP0798771A3 (zh)
JP (1) JPH09266212A (zh)
TW (1) TW430903B (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6027569A (en) * 1998-06-03 2000-02-22 Seh America, Inc. Gas injection systems for a LPCVD furnace
DE10197041T1 (de) * 2000-12-15 2003-12-11 Cyberoptics Corp Leiterplattenausrichtungsbildaufnahmevorrichtung mit verbesserter Schnittstelle
WO2002085091A2 (en) * 2000-12-15 2002-10-24 Cyberoptics Corporation Camera with improved illuminator
WO2002052643A2 (en) * 2000-12-27 2002-07-04 Memc Electronic Materials, Inc. Semiconductor wafer manufacturing process
JP2002231665A (ja) * 2001-02-06 2002-08-16 Sumitomo Metal Ind Ltd エピタキシャル膜付き半導体ウエーハの製造方法
US6582995B2 (en) * 2001-07-11 2003-06-24 Taiwan Semiconductor Manufacturing Co., Ltd. Method for fabricating a shallow ion implanted microelectronic structure
US8846500B2 (en) 2010-12-13 2014-09-30 Semiconductor Components Industries, Llc Method of forming a gettering structure having reduced warpage and gettering a semiconductor wafer therewith

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT380974B (de) * 1982-04-06 1986-08-11 Shell Austria Verfahren zum gettern von halbleiterbauelementen
JPS60119733A (ja) * 1983-12-01 1985-06-27 Fuji Electric Corp Res & Dev Ltd シリコン板の重金属ゲッタリング方法
JPS6124240A (ja) * 1984-07-13 1986-02-01 Toshiba Corp 半導体基板
JPH042133A (ja) * 1990-04-18 1992-01-07 Mitsubishi Electric Corp 結晶板
JP2583803B2 (ja) * 1990-06-08 1997-02-19 東芝セラミックス株式会社 アモルファス構造を有するウェーハ
JP3063143B2 (ja) * 1990-10-29 2000-07-12 日本電気株式会社 Ｓｉ基板の製造方法
JP2726583B2 (ja) * 1991-11-18 1998-03-11 三菱マテリアルシリコン株式会社 半導体基板
DE4304849C2 (de) * 1992-02-21 2000-01-27 Mitsubishi Electric Corp Halbleitervorrichtung und Verfahren zur Herstellung einer Halbleitervorrichtung
JP2839801B2 (ja) * 1992-09-18 1998-12-16 三菱マテリアル株式会社 ウェーハの製造方法
JPH07221112A (ja) * 1994-02-02 1995-08-18 Hitachi Ltd 半導体ウエーハの製造方法
US5757063A (en) * 1994-03-25 1998-05-26 Kabushiki Kaisha Toshiba Semiconductor device having an extrinsic gettering film

Also Published As

Publication number Publication date
US5970365A (en) 1999-10-19
EP0798771A2 (en) 1997-10-01
EP0798771A3 (en) 1997-10-08
JPH09266212A (ja) 1997-10-07

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Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees