TW429398B - Method for manufacturing a flip chip semiconductor device - Google Patents

Method for manufacturing a flip chip semiconductor device

Info

Publication number
TW429398B
TW429398B TW088111432A TW88111432A TW429398B TW 429398 B TW429398 B TW 429398B TW 088111432 A TW088111432 A TW 088111432A TW 88111432 A TW88111432 A TW 88111432A TW 429398 B TW429398 B TW 429398B
Authority
TW
Taiwan
Prior art keywords
semiconductor device
solder
flip chip
chip semiconductor
manufacturing
Prior art date
Application number
TW088111432A
Other languages
English (en)
Chinese (zh)
Inventor
Masaru Saitoh
Original Assignee
Citizen Watch Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Citizen Watch Co Ltd filed Critical Citizen Watch Co Ltd
Application granted granted Critical
Publication of TW429398B publication Critical patent/TW429398B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10—Containers or parts thereof
    • H10W76/12—Containers or parts thereof characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/11—Separation of active layers from substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7422—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07251—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/9415—Dispositions of bond pads relative to the surface, e.g. recessed, protruding
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/135—Removal of substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/977—Thinning or removal of substrate

Landscapes

  • Mechanical Treatment Of Semiconductor (AREA)
  • Wire Bonding (AREA)
TW088111432A 1998-07-10 1999-07-06 Method for manufacturing a flip chip semiconductor device TW429398B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19517198A JP4343286B2 (ja) 1998-07-10 1998-07-10 半導体装置の製造方法

Publications (1)

Publication Number Publication Date
TW429398B true TW429398B (en) 2001-04-11

Family

ID=16336632

Family Applications (1)

Application Number Title Priority Date Filing Date
TW088111432A TW429398B (en) 1998-07-10 1999-07-06 Method for manufacturing a flip chip semiconductor device

Country Status (4)

Country Link
US (1) US6060373A (https=)
JP (1) JP4343286B2 (https=)
KR (1) KR100572525B1 (https=)
TW (1) TW429398B (https=)

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CN102194761A (zh) * 2010-03-17 2011-09-21 台湾积体电路制造股份有限公司 无残留物晶片的制造方法

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US6352881B1 (en) 1999-07-22 2002-03-05 National Semiconductor Corporation Method and apparatus for forming an underfill adhesive layer
US6338980B1 (en) * 1999-08-13 2002-01-15 Citizen Watch Co., Ltd. Method for manufacturing chip-scale package and manufacturing IC chip
JP2001094005A (ja) * 1999-09-22 2001-04-06 Oki Electric Ind Co Ltd 半導体装置及び半導体装置の製造方法
KR100674501B1 (ko) * 1999-12-24 2007-01-25 삼성전자주식회사 플립 칩 본딩 기술을 이용한 반도체 칩 실장 방법
US6656765B1 (en) * 2000-02-02 2003-12-02 Amkor Technology, Inc. Fabricating very thin chip size semiconductor packages
US6190943B1 (en) * 2000-06-08 2001-02-20 United Test Center Inc. Chip scale packaging method
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JP3485525B2 (ja) * 2000-07-06 2004-01-13 沖電気工業株式会社 半導体装置の製造方法
KR100394377B1 (ko) * 2000-09-07 2003-08-14 이진구 플립칩용 범프 제조 방법
JP2002093831A (ja) * 2000-09-14 2002-03-29 Shinko Electric Ind Co Ltd 半導体装置およびその製造方法
US20030221313A1 (en) * 2001-01-26 2003-12-04 Gann Keith D. Method for making stacked integrated circuits (ICs) using prepackaged parts
US7174627B2 (en) * 2001-01-26 2007-02-13 Irvine Sensors Corporation Method of fabricating known good dies from packaged integrated circuits
US20020100600A1 (en) * 2001-01-26 2002-08-01 Albert Douglas M. Stackable microcircuit layer formed from a plastic encapsulated microcircuit and method of making the same
US6949158B2 (en) * 2001-05-14 2005-09-27 Micron Technology, Inc. Using backgrind wafer tape to enable wafer mounting of bumped wafers
US6794751B2 (en) * 2001-06-29 2004-09-21 Intel Corporation Multi-purpose planarizing/back-grind/pre-underfill arrangements for bumped wafers and dies
WO2003005782A2 (en) * 2001-07-02 2003-01-16 Irvine Sensors Corporation Stackable microcircuit and method of making the same
JP3649169B2 (ja) * 2001-08-08 2005-05-18 松下電器産業株式会社 半導体装置
JP3530158B2 (ja) * 2001-08-21 2004-05-24 沖電気工業株式会社 半導体装置及びその製造方法
US6624048B1 (en) * 2001-12-05 2003-09-23 Lsi Logic Corporation Die attach back grinding
US6908784B1 (en) * 2002-03-06 2005-06-21 Micron Technology, Inc. Method for fabricating encapsulated semiconductor components
US6753482B1 (en) 2002-05-06 2004-06-22 Micron Technology, Inc. Semiconductor component with adjustment circuitry
US7423337B1 (en) 2002-08-19 2008-09-09 National Semiconductor Corporation Integrated circuit device package having a support coating for improved reliability during temperature cycling
US6903442B2 (en) * 2002-08-29 2005-06-07 Micron Technology, Inc. Semiconductor component having backside pin contacts
US6638837B1 (en) * 2002-09-20 2003-10-28 Taiwan Semiconductor Manufacturing Company Method for protecting the front side of semiconductor wafers
US20050176233A1 (en) * 2002-11-15 2005-08-11 Rajeev Joshi Wafer-level chip scale package and method for fabricating and using the same
US7388294B2 (en) 2003-01-27 2008-06-17 Micron Technology, Inc. Semiconductor components having stacked dice
US7301222B1 (en) 2003-02-12 2007-11-27 National Semiconductor Corporation Apparatus for forming a pre-applied underfill adhesive layer for semiconductor wafer level chip-scale packages
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JP4049035B2 (ja) * 2003-06-27 2008-02-20 株式会社デンソー 半導体装置の製造方法
JP4260617B2 (ja) * 2003-12-24 2009-04-30 株式会社ルネサステクノロジ 半導体装置の製造方法
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JP4547187B2 (ja) * 2004-05-24 2010-09-22 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
KR100618543B1 (ko) * 2004-06-15 2006-08-31 삼성전자주식회사 웨이퍼 레벨 적층 패키지용 칩 스케일 패키지 제조 방법
SG130055A1 (en) * 2005-08-19 2007-03-20 Micron Technology Inc Microelectronic devices, stacked microelectronic devices, and methods for manufacturing microelectronic devices
SG130066A1 (en) * 2005-08-26 2007-03-20 Micron Technology Inc Microelectronic device packages, stacked microelectronic device packages, and methods for manufacturing microelectronic devices
CN100435300C (zh) * 2005-09-28 2008-11-19 相丰科技股份有限公司 晶片封装方式
JP2007123362A (ja) * 2005-10-25 2007-05-17 Disco Abrasive Syst Ltd デバイスの製造方法
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US7838424B2 (en) * 2007-07-03 2010-11-23 Taiwan Semiconductor Manufacturing Company, Ltd. Enhanced reliability of wafer-level chip-scale packaging (WLCSP) die separation using dry etching
US9064716B2 (en) * 2009-09-30 2015-06-23 Virtium Technology, Inc. Stacking devices at finished package level
US9136144B2 (en) * 2009-11-13 2015-09-15 Stats Chippac, Ltd. Method of forming protective material between semiconductor die stacked on semiconductor wafer to reduce defects during singulation
JP2012079910A (ja) * 2010-10-01 2012-04-19 Disco Abrasive Syst Ltd 板状物の加工方法
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JP7470411B2 (ja) * 2020-09-30 2024-04-18 フジコピアン株式会社 ウェーハ加工用積層体、それを用いた薄型ウェーハの製造方法及び薄型ウェーハ個片化の製造方法

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CN102194761A (zh) * 2010-03-17 2011-09-21 台湾积体电路制造股份有限公司 无残留物晶片的制造方法
CN102194761B (zh) * 2010-03-17 2013-07-24 台湾积体电路制造股份有限公司 无残留物晶片的制造方法
US8642390B2 (en) 2010-03-17 2014-02-04 Taiwan Semiconductor Manufacturing Company, Ltd. Tape residue-free bump area after wafer back grinding

Also Published As

Publication number Publication date
US6060373A (en) 2000-05-09
JP4343286B2 (ja) 2009-10-14
KR20000011527A (ko) 2000-02-25
KR100572525B1 (ko) 2006-04-24
JP2000031185A (ja) 2000-01-28

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