TW418405B - Barium titanate series semiconductor porcelain composition - Google Patents

Barium titanate series semiconductor porcelain composition Download PDF

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Publication number
TW418405B
TW418405B TW086116726A TW86116726A TW418405B TW 418405 B TW418405 B TW 418405B TW 086116726 A TW086116726 A TW 086116726A TW 86116726 A TW86116726 A TW 86116726A TW 418405 B TW418405 B TW 418405B
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mol
barium titanate
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mole
calculated
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TW086116726A
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Chinese (zh)
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Satoshi Kakihara
Toshiharu Hirota
Yasuhiro Nabika
Noriyuki Yamamoto
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Murata Manufacturing Co
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    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
    • H01C7/022—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient mainly consisting of non-metallic substances
    • H01C7/023—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient mainly consisting of non-metallic substances containing oxides or oxidic compounds, e.g. ferrites
    • H01C7/025—Perovskites, e.g. titanates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
    • C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
    • C04B35/465—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates
    • C04B35/468—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on barium titanates
    • C04B35/4682—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on barium titanates based on BaTiO3 perovskite phase
    • C04B35/4684—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on barium titanates based on BaTiO3 perovskite phase containing lead compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Structural Engineering (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Thermistors And Varistors (AREA)
  • Lock And Its Accessories (AREA)

Abstract

A barium titanate series semiconductor porcelain composition is disclosed, which comprises a principal component made up of barium titanate or a solid solution thereof together with a semiconducting agent, and additives, wherein in the principal component, a part of Ba of BaTiO3 is replaced with from 1 to 25 mol% Ca, from 1 to 30 mol% Sr, and from 1 to 50 mol% Pb; the semiconducting agent is added in an amount of from 0.2 to 1.0 mol% calculated as the element to 100 mol% of the principal component; and as the above-described additives, manganese oxide is added in an amount of from 0.01 to 0.10 mol% calculated as Mn, silica is added in an amount of from 0.5 to 5 mol% calculated as SiO2, and magnesium oxide is added in an amount of from 0.0028 to 0.093 mol% calculated as Mg. The semiconductor porcelain composition has improved rush current resisting characteristics, whereby a thermistor element can be small-sized.

Description

經濟部智慧財產局員工消費合作社印製 I 418400 A7 一.:____B7_._Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs I 418400 A7 I .: ____ B7 _._

五、發明說明（O 發明嶺域 本發明係有關鈦酸鋇系列半専體陶瓷組成物。 發明觜景 至此之前，有關鈦酸鋇糸列半導體陶瓷組成物•已知 者有下列组成物。亦即，已審査已公開的日本專利申請第 62-43522揭示出由BaTi03 所製成或作為主要成分製成的 钛酸鋇糸列半導體陶瓷，其中一部份的Ba被Pb所取代，其 中含有Μ上文所述.欽酸鋇赛列陶瓷作為1 Q 〇為基準.之 0.00035至0.007 2重量％的鎂Μ増加其擊穿電壓。 此外，已審査已公開的日本專利申請第63-2832 4號揭 示一種鈦酸鋇系列陶瓷半導體，其包括30至35冥耳％ BaTi〇3 ，3 至 25 莫耳 ％CaTi〇3 ，1 至 30 莫耳 ％SrTi03 * 和1 至50莫耳％PbTi03作為主要成分且同時用上述Ca， Sr， 和Pb取代BaTi〇3中的一部份Ba，該钛酸鋇系列陶瓷 半導體組成物與傳統者比較之下具有優良的耐電壓特性和 '急電'流抗拒特性。 另外，已審査已公開的日本專利申請第62- 58 64 2號揭 示一種半導體陶瓷組成物，其具有不高的急電流且正阻溫 度特性顯示出隨畤間過去的較小變化’如在斷謓檢驗等之 中所顯示者。 再者，未審査已公開日本専利申請第2-48464號揭示 出經由使用一種鈦酸鋇糸列半導體陶瓷，其中BaTi〇3 中 的一部份Ba經由0.001至0.1原子％ Mg和0.01至2.0原子 -4 - 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） I ------Γ I-----(.¾--------訂---------線、 • · . ____·-. <請先閱讀背面之注意事項再填寫本頁) A7 I 4184^0 _._ B7 _；_ 五、發明說明（2) % Ca_時取代；或經由使用一钛酸鋇系列半導體陶瓷•其 中一部份BaTi〇3經用至5·0原子％的“和G.01至2.0 原子％C a同時取代；或使用一鈦酸鋇糸列半導體陶瓷’其 中一部份的BaTi〇3經用至〇*1原子％的Mg，0.01至 5.0原子％的1>{)，和〇·(Π至2.0原子鉍的Ca所同時取代* 可將Μ使用環境的溫度範圔内之溫度變化為基準所發生的 電阻變化予W限制住且也可以將常溫下的比電阻值限制在 低值。 .. 更有者，未審査已公開的日本專利申請第2-48465號 揭示出經由使用一鈦酸鋇糸列半導體陶瓷，其中BaTi03 所含一部份的Ba被O.flOl至〇·1原子％的^18所取代，一钛酸 鋇系列半導體陶瓷，其中BaTi03 所含一部份Ba被0 . 0 1至 5.0原子％的卩1)所取代*或一鈦酸鋇系列半導體陶瓷，其 中BaTiOs 所含一部份Ba被0 . 001至0. 1原子％ Mg和Q . 01至 5 . 0原子％ Pb所同時取代，可Μ%制住K使用環境溫度範 圍内的溫度變化為基準之電姐變化。 最近，隨著電子俑器的小型化及密度的增加，對於用 在電子儀器中的以钛酸鋇糸列半導體陶瓷組成物所構成之 正特性熱變電阻器元件，其小型化亦有所進展。不^過' 已 知者當正特性熱變電阻器元件在小型化時1其急電流抗拒 特性（閃耐電壓特性（flash withstand voltage characteristics))會降低，因而傳統正特性熱獎電阻器 元阼不能充分地應付市場對其所要隶更小型化之需求。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 策----！丨訂---------線「 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 ί: 4184 05 Α7 ______Β7___ 五、發明說明（3) 發明概述 · 本發明的一項目的為提出一種钛酸鋇糸列半導體陶瓷 組成物，其能夠經由改良急電流抗拒特性而將正特性熱變 電阻器予Μ小型化。 本發明即為了達到上文所述目的而完成的。 因此.，根據本發明，提出一種鈦酸鋇糸列半導體陶瓷 組成物，其包含由鈦酸鋇或其固體溶液所構成的主要成分 ，以及半導劑，和添加劑，其中於上文所述主要成分中， BaTi〇3所含一部份Ba被1至25莫耳％Ca，1至30莫耳％ 的Sr，和1至5Q莫耳％ Pb所取代；上文所述半導劑係Μ元 素形式相對於主要成份的100冀耳％計算為0.2至1.0莫 耳％之量加入，且有闥上述添加劑，氧化錳的添加量為Μ Μη 計算時的fl.Oi 至0.10莫耳％，氧化矽的添加量為Μ Si Οζ計算時的0.5至 5莫耳％，且氧化鎂的添加量為Μ Mg計算時的0.0028至0.0 9 3萁耳％。 此外，於本發明鈦酸鋇系列半導體陶瓷組成物中，較 佳者上述半導劑為至少一種下列元素：Y ，U，C e，fi b * Bi，.Sb， W，.Th， Ta， Dy， Gd » iid * 和.Set 〇 圖式之藺略說明 圖1為顯示出在正特性熱變電阻器元件中測得的時Μ 與電流值的關係之圖形。 發明之詳細說明 本發明要在下面予以詳细說明。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -------------ί,哀--------訂----1 — J — .線 y (請先閲讀资面之注意事項再填寫本頁) Ί 418405 A7 1 B7 五、發明說明（4 ) 本發明鈦酸鋇系列半導體組成物含有由鈦酸鋇或其固 體溶液構成的主要成分，其中BaTi03 所含一部份Ba被Ca .. ，S r和P bM上文所述調配比例（莫耳％ )取代；含有一> 導劑，且亦含有上述調配比例（冥耳％)的氧化錳*氧化 矽和氧化鎂。經由具有上逑組成，可Μ改良急電流抗拒特 性*由是使正特性熱變電阻器元件的小型化變成可能。 瑄是因為經由用Pb，Ca和Sr同時取代BaTi03 所含一 部份Ba並於其中加入Mg，可Μ使急電流抗拒特性在與只單 獨用每一種成分或用兩種成分取代BaTi03 所含一部分Ba 並添加Mg的傳統情況比較之下大大地改良。 此外，有關調配比例，當从組成物的總量為1 〇 0冥耳 %時，主成分的調配比例為將半導劑和添加繭的總莫耳％ 從100其耳％減去所得值。 另外，對於本發明所用半導劑沒有特別的限制且各棰 半導劑都可以使用。其實用例子包括各元素例如 Y ，La ，Ce，Nb， Bi，Sb * W，.Th，Dy · Gd * Nd，和 Sur ° 本發明要於下文中根據下列實施例予以更實質地說明 但本發明不只受限於該實施例。 〜 實施例 有關原料，係 KBaC03 ，CaC〇3 ，Pb3 〇4 ，SrC〇3 和 Ti02 作為主要成分，MY2 〇3 ，Uz 〇3 ，Er2 〇3 ， 和 Nd2 〇3作為半導劑，且M MnC03 ，Si02 ，和MgC03 作為添加劑•這些原料係經調配致使可Μ得到每一種具有 本紙張尺度適用_國國家標準（CNS)A4規格<210 X 297公釐〉 <請先閲讀背面之注意事項再填寫本頁) /装—------訂---------線' 經濟部智慧財產局員工消費合作社印製 ί /Π 8 4 Q 5 Α7 Β7 五、發明說明（5) 表1至表4中所示調配比例的半導體陶瓷組成物，並將經 調配的混合物更予Μ濕摻合過。將該混合物脫水並乾燥， 然後在1 , 1 0 0至1，2 0 0 的溫度下煅燒2小時。之後，將經 煅燒的原料研磨，添加黏合劑再濕接合，接著造粒，並於 1,000公斤/平方厘张的模造壓力下模造成圓盤彤式。其 後，經由1，300至1，40010溫度下煅燒該模造圓盤，而得到 直徑11.5毫张及厚度2.2毫米之圓盤形式半導題陶瓷。 在所得半導體陶瓷的兩個主要表面形成具有Ni-Ag層 構造之電極，其包括非電解鎳板電極（第一層）和一烤銀 電極（s i 1 ver-baked e 1 ec tr ode)(第二層）而得各樣品 Ο 對於每一所得這些樣品，測董：常溫（25·〇 )電阻值 ，耐電壓特性*居里溫度，和急電流抗拒特性（閃耐電壓 特值）並將這些值列於下面的表5至表8之中。 於上文所述各種特性值中*耐電壓特性值為在將施加 於樣品上的電極逐漸增加時，發生樣品斷裂之前的最高施 加電壓值。此外，急電流抗拒特性值為在對樣品施加交流 急電壓時，半導體陶瓷不破裂之最大電壓值（閃附電壓） 。此外，於諸表中，加上（*) 的樣品镰號皆為在本發明 範園之外者。 〔表1 ] (1 )樣品編號 (2 )主成分（冥耳％ ) 本紙張尺度適用t國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) /¾--------訂---------線；. 經濟部智慧財產局員工消費合作社印製 41 840ο Α7 經濟部智慧財產局員工消費合作社印製 Β7_五、發明說明（6 ) (3 )半専劑（莫耳％ ) (4 )添加劑（莫耳％ ) 〔表2〕 (1 )樣品編號 (2 )主成分（莫耳％ ) (3 )半導劑（莫耳％ ) (4 )添加劑（莫耳％ ) 〔表3〕 (1 )樣品編號 (2) 主成分（莫耳％) (3 )半導劑（莫耳％ ) (4 )添加劑（莫耳％ ) 〔表4〕 (1 )樣品編號 (2 )主成分（莫耳％ ) (3) 半導劑（冥耳％) (4 )添加劑（莫耳％ ) 〔表5 ] (5 )樣品編號 (6 )電阻值（Ω ) (7)耐電壓特性值（V) (8 )居里點（C ) (9 )急電流抗拒特性值（V ) -9- (請先閲讀背面之iit事項再填寫本頁) ^ -------訂----------線( 本紙張尺度適用t國國家標準（CNS)A4規格（210 X 297公釐） 經濟部智慧財產局員工消費合作社印製 ί 4184 05 Α7 _Β7___ 五、發明說明（7) 〔表έ〕 (5 )樣品牖號 (6 )電姐值（Ω ) (7)耐電壓特性值（V) (8 )居里點（Ό ) (9)急電流抗拒特性值（V) ί表7〕 (5 )樣品編號 (6 )電阻值（Ω ) (7)耐電壓特性值（V) (8 )居里點（力） (9)急電流抗拒特性值（V) 〔表8 ] (5 )樣品編號 (6 )電阻值（Ω ) (7 )耐電壓特性值（V ) (8 )居里點< Ό ) (9)急電流抗拒特性值（V) (1 0 )熔接 至此，要解釋限制本發明組成範圍數值之理由。 於用钛酸鋇或其固體溶液所構成的主成分中，將 BaTi03所含一部份Ba用1 至25冥耳％ WCa，1至30莫耳 %的31^和用1至50萬耳％的卩1)予Μ取代所用諸範圍予Μ -10- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） I I I I I L---— II 衷-— — —--I i illllu I <請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 ί 41 84 05 a? Β7 五、發明說明（8) 限制之理由為下文所述者。 亦即，當Ca少於1莫耳％時，其添加效應目卩是不足旦 如比較樣品煸號1 ，樣品編號2 ，和樣品編號3中所示附 電壓特性值之下可知其急電流抗拒特性值會降低。 相反地，當Ca超過2 5莫耳％時，其電阻值會大幅增加 且其急電流抗拒特性值會降低*如經由比較樣品編號2 0和 樣品編號21的附電壓特性值所示者。 此外，當Sr少於1莫耳％時，從比較樣品編號22和樣 品編號23的耐電壓特性值可知•其急電流抗拒特挂值會降 低。另外，樣品編號22和樣品編號23為不加Sr的例子，但 卽使在Sr實際上係K小於1莫耳％的童加入時，業經確定 者，其添加效應亦顯不足且從耐電壓特性值的比較可知， 其急電流抗拒特性值會降低。 相，反地，當Sr超遇30莫耳％時，其電阻值會大幅増加 且其急電流抗拒特性值會降低，如從樣品編號38,樣品編 號3 9，和樣品編號4 0中所示耐電壓特性值的比較可知。 此外，當Pb少於1莫耳％時，其急電流抗拒特性值會 降低，如從樣品編號41與樣品編號42所示耐電壓特性值的 比較可知。另外，樣品編號41與樣品編號42為不加Pb的例 子，但即使實察上K小於1莫耳％的童加人P b，業經確定 者*其添加效應亦顯不足且從耐電壓特性值的比較可知， 其急電流抗拒特性值會降低。 相反地，當Pb超過50莫耳％時，即變得難K形成半導 -11- 本紙張尺度適用中國國家標準（CNS>A4規格（210 X 297公釐） (锖先閱讀背面之注意事項再填寫本頁) ----訂-------：！線、 ί 418405 Α7 Β7 五、發明說明（9) 體，如樣品編號58，樣品編號59，和樣品钃號60中所示者 〇 <請先閱讀背面之注意事項再填寫本頁) 接著要在下面解釋半導劑的調配比例限制在β . 2至1 . 0 冥耳％對100莫耳％上文所逑主成分的範圍内之理由。 亦即，當半導劑的添加量小於0.2莫耳％時，其添加 效應即呈不足，不能肜成半導體，且其電阻值搔為増加， 如樣品編號Ν 〇 . 6 1 *樣品編號6 2，樣品縮號7 8，樣品緬號 96，和樣品鐮號97中所示者。 相反地，當其添加量超過1.0莫耳％時，其電阻值會 極端.地增加且其耐電壓特性值和急電流抗拒特性值皆受損 ，如樣品鐮號76，樣品編號77，樣品編號94，樣品钃號95 •樣品編號106 ，和樣品編號107中所示者。 其次*要在下面說明將氧化錳作為添加劑的調配量限 制在Κ Ηη計篝時為β . 01至0 . 10莫耳％對100萁耳％上文所 述主成分的範圍内之理由。 經濟部智慧財產局貝工消費合作社印製 亦即，當氧化錳的添加量小於0 . 0 1莫耳％時*其添加 效應卽呈不足*其電阻溫度菱化比例Φ，因而所得鈦酸鋇 半導體陶瓷組成物缺乏實用性，如樣品媚號112 ，樣品編 號113 ，和樣品編號114中所示者。 相反地，當其添加量超過0.10莫耳％時，其電咀值會 大大地增加且所得產物缺乏赏用性•如樣品編號124至樣 品編號140中所示者。 再來要在下文說明將氧化矽作為添加劑的調配童限制 -1 2- 本紙張尺度適用t國國家標準（CNS)A4規格（210 X 297公釐） (' 41 84 05 A7 τ Β7 五、發明說明（10) 在以Si〇2計算時為〇. 5至5莫耳％對1〇〇冥耳％上文所述主 成分的範圍内之理由。 亦即，當氧化矽的添加螢小於〇 · 5莫耳％時，其添加 效應即里不足且^不能充分地拘限住相對於半導劑含量輕微 偏差的比電阻值偏差*如樣品編號1 2 6 ，樣品煽號1 2 7 ’ 和樣品编號i 28中所Tf?者。 相反地，當其添加量超過5冥耳％時，其電阻值會大 為增加且不能充分地拘限住比電阻值的偏差。 再者，要在下文說明將氧化鎂的調配量限制在M Mg計 算時為0 . 0 0 2 8至0 . Q 9 3莫耳％對1 0 0冥耳％上文所逑主成 分的範圍內之理由。 亦即，當氧化鎂的添加最小於〇.〇 02 8其耳％時，會因 為添加童小而不能得到改良特性值之效果，如樣品孀號1 .4 ，11，12，17，22* 24，2 9 > 32，3 4 * 35，38，4 1* 43， 56， 58* 61 * 63， 67， 70» 71， 76， 79， 82， S3 - 90 ，94， 96， 98， 102， 106 · 108 * 112* 115， 119 > 120 · 124， 126* 129， 133* 134* 和 139中所示者。 另一方面，當添加量超過0.093冥耳％時，電姐值由 於過量添加而增加，而得不到改良特性值之效果，如樣品 編號7，10 * 15* 19· 31，54，66 * 75，81，87，88，89 ，9 3，101，105 - 111» 118，123，132 -和 138所示。 另外，也根據已審査公開的日本專利申請第6 2 - 4 3 5 2 2 號實施例3製備樣品作為參考樣品如下面表9所示者，並 -1 3 - 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐〉 (請先閱讀背面之注意事項再填寫本頁) ，裝 —訂---------線、 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 41840ο ζ 五、發明說明（11) 用上女所述的相同方法測量每一樣品的閃耐電壓特值。所 得结果列於表9之中。此外，同表中也列出該等樣品的居 里點（Tc)和比電阻（Ρ)。 此外，每一成分的添加量係以莫耳％表之。 〔表9 ] (1 1 )樣品編號 (12)主成分（莫耳％) (1 3 )電特性值 (1 4 )閃耐電極（V ) 根據這些參考實施例的樣品，可K看出在含有 Ba-Pb糸列主成分的鈦酸鋇系列半導體陶瓷組成物中，即 使K Mg計算的氧化鎂添加童為0 . 028至0 · 05 6莫耳％時，也 不能得到充分的閃耐電壓特性值。 此外，也製備各具有與表9所示者幾乎相同的<□和Tc 之Ba-mr-Ca系列樣品，如表1 0中所示者並用上文所 述相同方法測試每一樣品的閃耐電壓特性值。所得结果皆 列於同表中。 〔表 1 0 ]. (1 1 )樣品編號 (12)主成分（莫耳％) (1 3 )電特性值 (14)閲耐電極（V) 根據這些樣品，可Μ看出經由採用Ba-Pb-Sr-Ca系列 -14- 本紙張尺度適用中國國家標準（CNSM4規格（210 X 297公釐） <請先閱讀背面之注意事項再填寫本頁) ----訂--------•線' 經濟部智慧財產局員工消費合作社印髮V. Description of the Invention (O) The invention relates to the semi-corporeal ceramic composition of barium titanate series. Prior to the invention, the semiconductor ceramic composition of the barium titanate array is known. The following are known. That is, the published Japanese patent application No. 62-43522 has revealed that a barium titanate semiconductor semiconductor ceramic made of BaTi03 or made as a main component, a part of which is replaced by Pb, which contains M As described above, barium cinnamate ceramics are used as the basis for 1 Q 0. 0.00035 to 0.007 2% by weight of magnesium Mn plus its breakdown voltage. In addition, published Japanese patent application No. 63-2832 4 has been examined A barium titanate series ceramic semiconductor is disclosed, which includes 30 to 35 mole% BaTi〇3, 3 to 25 mole% CaTi〇3, 1 to 30 mole% SrTi03 *, and 1 to 50 mole% PbTi03 as main components. At the same time, a part of Ba in BaTiO3 is replaced with the above Ca, Sr, and Pb. The barium titanate series ceramic semiconductor composition has excellent voltage resistance characteristics and 'emergency current' resistance characteristics compared with traditional ones. In addition, reviewed and published Japanese Patent Application No. 62-58 64 No. 2 discloses a semiconductor ceramic composition having a low rapid current and a positive resistance temperature characteristic showing a small change with the past, as in a break test, etc. Furthermore, Unexamined Published Japanese Patent Application No. 2-44864 discloses that by using a barium titanate semiconductor semiconductor ceramic, a portion of Ba in BaTi〇3 passes 0.001 to 0.1 atomic% Mg and 0.01 Up to 2.0 Atom-4-This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) I ------ Γ I ----- (. ¾ -------- Order --------- line, • ·. ____ ·-. ≪ Please read the notes on the back before filling in this page) A7 I 4184 ^ 0 _._ B7 _; _ 5. Description of the invention ( 2) Substituted at% Ca_; or through the use of a barium titanate series semi-conductor ceramics • Part of BaTi〇3 is replaced with "5.0 atomic%" and G.01 to 2.0 atomic% Ca simultaneously; or A barium titanate semiconductor semiconductor ceramic is used in which a portion of BaTi〇3 is used to 0 * 1 atomic% of Mg, 0.01 to 5.0 atomic% of 1 > {), and 0 · (Π to 2.0 atomic bismuth of Same as Ca Replace * when the temperature change within the temperature range of the use environment can be used as a reference to limit the change in resistance and the specific resistance value at room temperature can also be limited to a low value .. Even more, unreviewed Published Japanese Patent Application No. 2-44865 discloses that by using a barium titanate semiconductor semiconductor ceramic, a portion of Ba contained in BaTi03 is replaced with 0.1 to 0.1 atom% of ^ 18. Barium titanate series semiconductor ceramics, in which a portion of Ba contained in BaTi03 is replaced by 0.01 to 5.0 atomic percent 卩 1) * or a barium titanate series semiconductor ceramics, in which a portion of Ba contained in BaTiOs is replaced by 0. 001 to 0.1 atomic% of Mg and Q. 01 to 5.0 atomic% of Pb are substituted at the same time, which can be used to control the change of the temperature by using the temperature change within the temperature range of K as the reference. Recently, with the miniaturization and increase of the density of electronic figurines, the miniaturization of the positive-characteristic thermistor elements made of barium titanate semiconductor ceramic composition used in electronic instruments has also progressed. . Do not over 'It is known that when the positive characteristic thermal resistance resistor element is miniaturized, 1 its rapid current resistance (flash withstand voltage characteristics) will be reduced, so the traditional positive characteristic thermal award resistor element It cannot adequately cope with the market's demand for more miniaturization. This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page) Policy ----!丨 Order --------- Online "Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed: 4184 05 Α7 ______ Β7 ___ V. Description of the Invention (3) Summary of the Invention · This An object of the present invention is to propose a barium titanate semiconductor semiconductor ceramic composition capable of miniaturizing a positive-characteristic thermal resistance resistor by improving the rapid current resistance characteristic. The present invention is to achieve the above-mentioned object. Therefore, according to the present invention, a barium titanate semiconductor semiconductor ceramic composition is provided, which comprises a main component composed of barium titanate or a solid solution thereof, a semiconducting agent, and an additive, wherein Among the main ingredients, a portion of Ba contained in BaTi03 is replaced by 1 to 25 mole% Ca, 1 to 30 mole% Sr, and 1 to 5Q mole% Pb; The dosage form of the element M is 0.2 to 1.0 mol% relative to 100 mol% of the main component, and the above additives are added. The addition amount of manganese oxide is fl.Oi to 0.10 mol when calculated as Μηη. %, The amount of silicon oxide added is M Si 〇 0.5 to 5 mole% when ζ is calculated, and the amount of magnesium oxide added is 0.0028 to 0.09 3 mole% when MG is calculated. In addition, in the barium titanate series semiconductor ceramic composition of the present invention, the preferred one is The semiconducting agent is at least one of the following elements: Y, U, Ce, fi b * Bi, .Sb, W, .Th, Ta, Dy, Gd »iid * and .Set. In order to show the graph of the relationship between the time M and the current value measured in the positive-characteristic thermistor element. DETAILED DESCRIPTION OF THE INVENTION The present invention will be described in detail below. This paper size applies Chinese National Standard (CNS) A4 Specifications (210 X 297 mm) ------------- ί, sad -------- order ---- 1 — J — .line y (please read the information first (Please note this page before filling in this page) Ί 418405 A7 1 B7 V. Description of the invention (4) The barium titanate series semiconductor composition of the present invention contains the main component composed of barium titanate or its solid solution, of which BaTi03 contains a part Ba is replaced by Ca .., S r and P bM in the above-mentioned blending ratio (mol%); contains a > conductive agent, and also contains the above blending ratio (mineral%) manganese oxide * Silicon oxide and magnesia. By having an upper composition, it is possible to improve the sudden current resistance characteristics. * It is possible to reduce the size of the positive-type thermal resistor element. 瑄 It is because BaTi03 is replaced by Pb, Ca and Sr simultaneously. The inclusion of a portion of Ba and the addition of Mg therein can greatly improve the resistance to sudden currents compared to the traditional case where only a portion of Ba contained in BaTi03 is replaced by each component alone or with two components, and Mg is added. . In addition, regarding the blending ratio, when the total amount of the composition is 100%, the blending ratio of the main component is a value obtained by subtracting the total mole% of the semiconducting agent and the added cocoon from 100% of the mole. In addition, there is no particular limitation on the semiconducting agent used in the present invention, and each of the semiconducting agents can be used. Practical examples include elements such as Y, La, Ce, Nb, Bi, Sb * W, .Th, Dy · Gd * Nd, and Sur ° The present invention will be described more substantially in the following according to the following examples but this The invention is not limited only to this embodiment. ~ The relevant raw materials in the examples are KBaC03, CaC03, Pb3〇4, SrC03 and Ti02 as the main components, MY2 03, Uz 03, Er2 03, and Nd2 03 as semiconductive agents, and M MnC03 , Si02, and MgC03 as additives • These raw materials are formulated so that each of them can be obtained with this paper size applicable _ National Standard (CNS) A4 specifications < 210 X 297 mm > < Please read the notes on the back first (Fill in this page again) / Packing ------- Order --------- line 'Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Π / 4 4 Q 5 Α7 Β7 V. Description of the invention ( 5) The semiconducting ceramic composition is formulated in the proportions shown in Tables 1 to 4, and the formulated mixture is further wet-blended. The mixture was dehydrated and dried, and then calcined at a temperature of 1,100 to 1,200 for 2 hours. After that, the calcined raw material was ground, a binder was added, and then wet-bonded, followed by granulation, and it was molded into a disc type at a molding pressure of 1,000 kg / cm2. Thereafter, the molded disc was calcined at a temperature of 1,300 to 1,40010 to obtain a semiconductive ceramic in the form of a disc having a diameter of 11.5 millisheets and a thickness of 2.2 millimeters. An electrode having a Ni-Ag layer structure was formed on two main surfaces of the obtained semiconductor ceramic, and it includes a non-electrolytic nickel plate electrode (first layer) and a baked silver electrode (si 1 ver-baked e 1 ec tr ode). Two layers) and each sample was obtained. 0 For each of these samples, measure the resistance: room temperature (25 · 〇) resistance value, withstand voltage characteristics * Curie temperature, and withstand current resistance characteristics (flash withstand voltage characteristics) and The values are listed in Tables 5 to 8 below. Among the various characteristic values described above, the * withstand voltage characteristic value is the highest applied voltage value before the sample breaks when the electrode applied to the sample is gradually increased. In addition, the impulse current resistance characteristic value is the maximum voltage value (flashover voltage) at which the semiconductor ceramic does not break when an AC alternating voltage is applied to the sample. In addition, in the tables, the sample sickle numbers marked with (*) are outside the scope of the present invention. [Table 1] (1) Sample No. (2) Main component (% of the ear) The paper size is applicable to the national standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before filling in this Page) / ¾ -------- Order --------- line ;. Printed by the Consumers 'Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 41 840ο Α7 Printed by the Consumers' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Β7_ V. Description of the invention (6) (3) Half tincture (mol%) (4) Additive (mol%) [Table 2] (1) Sample number (2) Main component (mol%) (3) half Conductive agent (mol%) (4) Additive (mol%) [Table 3] (1) Sample number (2) Main component (mol%) (3) Semiconductive agent (mol%) (4) Additive (Mole%) [Table 4] (1) Sample number (2) Main component (Mole%) (3) Semiconducting agent (Molecular%) (4) Additive (Mole%) [Table 5] (5 ) Sample number (6) Resistance value (Ω) (7) Withstand voltage characteristic value (V) (8) Curie point (C) (9) Emergency current resistance characteristic value (V) -9- (Please read the back Please fill in this page for iit matters) ^ ------- Order ---------- Line (This paper size applies to National Standards (CNS) A4 specification (210 X 297 mm) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs ί 4184 05 Α7 _Β7 ___ V. Description of the invention (7) [Table Straight] (5) Sample No. (6) Electric sister value (Ω) (7) Withstand voltage characteristic value (V) (8) Curie point (Ό) (9) Emergency current resistance characteristic value (V) ί Table 7] (5) Sample number (6) Resistance value (Ω) (7) Withstand voltage characteristic value (V) (8) Curie point (force) (9) Immediate current resistance characteristic value (V) [Table 8] (5) Sample number (6) Resistance value (Ω) (7) Withstand voltage characteristic The value (V) (8) Curie point < Ό) (9) Immediate current resistance characteristic value (V) (1 0) Welding here, the reason for limiting the numerical value of the composition range of the present invention is explained. In the main component composed of barium titanate or a solid solution thereof, a portion of Ba contained in BaTi03 is used with 1 to 25 mole% WCa, 1 to 30 mole% 31 ^ and 1 to 500,000 ear% 1) I replace the range used by M to M -10- This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) IIIII L ----II Sincere-----I i illllu I < Please read the notes on the back before filling out this page) Printed by the Consumers' Cooperatives of the Intellectual Property Bureau of the Ministry of Economy ί 41 84 05 a? Β7 5. Description of the invention (8) The reasons for the restrictions are as described below. That is, when Ca is less than 1 mol%, the effect of the addition is insufficient. For example, the comparison of Sample No. 1, Sample No. 2, and Sample No. 3 shows the resistance to the rapid current. The characteristic value decreases. Conversely, when Ca exceeds 25 mol%, its resistance value increases significantly and its rapid current resistance characteristic value decreases * as shown by comparing the sampled voltage characteristics of sample number 20 and sample number 21. In addition, when Sr is less than 1 mol%, comparing the withstand voltage characteristics of Sample No. 22 and Sample No. 23 shows that the specific value of the sharp current resistance drop will be reduced. In addition, Sample No. 22 and Sample No. 23 are examples without adding Sr. However, when Sr is actually added to a child whose K is less than 1 mol%, it has been determined that the addition effect is also insufficient and the withstand voltage characteristics It can be seen from the comparison of the values that the sharp current resistance characteristic value decreases. On the contrary, when Sr exceeds 30 mol%, its resistance value will increase sharply and its rapid current resistance characteristic value will decrease, as shown in sample number 38, sample number 39, and sample number 40. The comparison of the withstand voltage characteristic values is known. In addition, when Pb is less than 1 mol%, the rapid current resistance characteristic value is reduced, as can be seen from the comparison of the withstand voltage characteristic values shown in Sample No. 41 and Sample No. 42. In addition, Sample No. 41 and Sample No. 42 are examples without adding Pb, but even if it is observed that K is less than 1 mol% of Tonga people P b, it has been determined by those who have determined * that the addition effect is insufficient and the value of the withstand voltage characteristic It can be seen that the value of the rapid current resistance characteristic will decrease. Conversely, when Pb exceeds 50 mol%, it becomes difficult to form a semiconducting -11- This paper size applies the Chinese national standard (CNS > A4 specification (210 X 297 mm)) (锖 Read the precautions on the back first (Fill in this page again) ---- Order -------: line, ί 418405 Α7 Β7 V. Description of the invention (9) Body, such as sample number 58, sample number 59, and sample number 60 (Please read the notes on the back before filling out this page) Next, we will explain below that the deployment ratio of the semiconducting agent is limited to β. 2 to 1.0. Reasons for the range of ingredients. That is, when the addition amount of the semiconducting agent is less than 0.2 mol%, the addition effect is insufficient to form a semiconductor, and the resistance value is increased, such as sample number N 〇. 6 1 * sample number 6 2 , Sample abbreviation number 78, Sample Myanmar number 96, and Sample sickle number 97. Conversely, when the added amount exceeds 1.0 mol%, its resistance value will be extremely increased. The voltage resistance value and the emergency current resistance value will be damaged, such as sample sickle number 76, sample number 77, and sample number. 94, Sample No. 95 • Sample No. 106, and Sample No. 107. Secondly, the reasons for limiting the blending amount of manganese oxide as an additive to β 0.01 to 0.1 mol% to 100 mol% as described above are explained below. Printed by the Shelley Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, that is, when the added amount of manganese oxide is less than 0.01 mol% * its addition effect is insufficient * its resistance temperature diamondization ratio Φ, so the obtained barium titanate Semiconductor ceramic compositions lack practicality, such as those shown in Sample No. 112, Sample No. 113, and Sample No. 114. Conversely, when it is added in excess of 0.10 mole%, its nozzle value will be greatly increased and the resulting product will lack appeal. • As shown in sample number 124 to sample number 140. Next, we will explain the restrictions on the deployment of silicon oxide as an additive. 1 2- This paper size is applicable to National Standards (CNS) A4 (210 X 297 mm) ('41 84 05 A7 τ B7. V. Invention Explanation (10) The reason for the range of 0.5 to 5 mole% vs. 100% of the above-mentioned main component in the calculation of SiO2. That is, when the addition of silicon oxide is less than 0.5. · At 5 mol%, its additive effect is insufficient and ^ cannot sufficiently limit the deviation of the specific resistance value with respect to the slight deviation of the semiconductor content * such as sample number 1 2 6 and sample fan number 1 2 7 'and Tf in the sample number i 28. Conversely, when the added amount exceeds 5 mole%, its resistance value will increase greatly and the deviation of the specific resistance value cannot be sufficiently restrained. The following explains the reason for limiting the amount of magnesium oxide to be calculated as M Mg from 0. 0 2 8 to 0. Q 93 3 mole% to 100% of the main component in the above range. That is, when the addition of magnesium oxide is less than 0.0002% of its ears, the effect of improving the characteristic value cannot be obtained because the child is added, such as Product number 1.4, 11, 12, 17, 22 * 24, 2 9 > 32, 3 4 * 35, 38, 4 1 * 43, 56, 58 * 61 * 63, 67, 70 »71, 76 , 79, 82, S3-90, 94, 96, 98, 102, 106 · 108 * 112 * 115, 119 > 120 · 124, 126 * 129, 133 * 134 * and 139. On the other hand When the addition amount exceeds 0.093 mole%, the electric sister value is increased due to excessive addition, and the effect of improving the characteristic value cannot be obtained, such as sample number 7, 10 * 15 * 19 · 31, 54, 66 * 75, 81 , 87, 88, 89, 9 3, 101, 105-111 »118, 123, 132-and 138. In addition, it is also based on the Examined and Published Japanese Patent Application No. 6 2-4 3 5 2 2 3 Prepare the sample as a reference sample as shown in Table 9 below, and -1 3-This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page ), Binding-booking --------- line, printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, printed by the Consumer Cooperatives of the Ministry of Economic Affairs, Intellectual Property Bureau, printed by 41840ο ζ 5. Description of Invention of The flashover voltage characteristics of each sample were measured in the same way. The results obtained are shown in Table 9. In addition, the Curie point (Tc) and specific resistance (P) of these samples are also listed in the same table. In addition, the amount of each component is expressed in mole%. [Table 9] (1 1) Sample number (12) Main component (mol%) (1 3) Electrical characteristic value (1 4) Flash proof electrode (V) According to the samples of these reference examples, K can be seen in In a barium titanate series semiconductor ceramic composition containing a main component of Ba-Pb queue, a sufficient flashover voltage cannot be obtained even when the magnesium oxide calculated by K Mg is 0.28 to 0 · 05 6 mol%. Characteristic value. In addition, Ba-mr-Ca series samples each having < □ and Tc which are almost the same as those shown in Table 9 were also prepared, as shown in Table 10, and the flash of each sample was tested by the same method described above. Withstand voltage characteristics. The results obtained are listed in the same table. [Table 1 0]. (1 1) Sample No. (12) Main component (mol%) (1 3) Electrical characteristic value (14) Readable electrode (V) According to these samples, it can be seen that by using Ba- Pb-Sr-Ca series-14- This paper size applies to Chinese national standard (CNSM4 specification (210 X 297 mm) < Please read the notes on the back before filling this page) ---- Order ----- --- • Line 'Issued by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs

Al84〇5 a7 ___B7_ 五、發明說明（12 ) 時，其閃耐電極特性值可獲得改良且在M g的添加量係在本 發明範圍内之時，其閃極電壓會獲得進一步改良。 另外，製備只含Ba系列作為主成分的樣品（樣品編號 2 1 6和2 1 7) ，B a - S Γ 系列樣品（樣品編號2 18和2 1 9)，Al84〇5 a7 ___B7_ 5. In the description of the invention (12), the flash resistance electrode characteristic value can be improved and when the added amount of M g is within the scope of the present invention, the flash voltage will be further improved. In addition, samples containing only Ba series as the main component (sample numbers 2 1 6 and 2 1 7), B a-S Γ series samples (sample numbers 2 18 and 2 1 9),

Ba-Ca糸列樣品（樣品獮號2 2 0和221) ，Ba-Pb-Sr糸統樣 品（樣品編號222和223) ，Ba-Pb-Cai列樣品（樣品編號 224和2 2 5 ) ，Ba-Sr-C.a糸列樣品（樣品编號2 2 6和2 2 7 )，Ba-Ca series samples (sample numbers 2 2 0 and 221), Ba-Pb-Sr system samples (sample numbers 222 and 223), Ba-Pb-Cai series samples (sample numbers 224 and 2 2 5), Ba-Sr-Ca queue samples (sample numbers 2 2 6 and 2 2 7),

Ba-Pb系列樣品（樣品編號2 28和2 2 9)及Ba-Pb-Sr-Ca系 列樣品（樣品編號230和231)，如下面表11中所示者並 Μ上文所述的相同方法測量每一樣品的閃附電壓特性值。 所得结果也列於同表之中。 〔表 1 1 ] (1 1 )樣品編號 (12)主成分（冥耳％) (1 3 )電特性值 (14)閃耐電極（V) 根據這些樣品，可以看出於MBa-Pb-Sr-Ca糸列作為 主成分的鈦酸鋇系列半導體陶瓷組成物，當M Mg計算的氧 化鎂添加量為0.028冥耳％時，可得到良好的閃耐電壓特 性值。 接著要製備具有用視情況選用上逑表1至表4中的樣 品所肜成的N i - Ag電極之圓盤狀熱變電阻器元件並測量其 電流衰減特性值（P max)和稱定電流特性值。结果皆列於 -15- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） I------ I I I--Λ.装·----！ I 訂·--111— (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局貝工消費合作社印製 在' 8厶Ο 5 Α7 ___Β7_ 五、發明說明（13 ) 下面的表1 2中。 此外，電流衰減特特性（Paax)係在定義所選尖荽值 Ii對鄰接尖峯值12的赛化量（II -12 )為P時的最大P 值，如圖1中所示者，而穩定電流特性值為在測量起始後 通過電路3分鐘時的電流值。 〔表 1 2〕 (1 5 )樣品編號 (1 6 )電阻值（Ω )Ba-Pb series samples (sample numbers 2 28 and 2 2 9) and Ba-Pb-Sr-Ca series samples (sample numbers 230 and 231), as shown in Table 11 below and the same method described above The flashover voltage characteristics of each sample were measured. The results obtained are also listed in the same table. [Table 1 1] (1 1) Sample No. (12) Main component (% of sclerotia) (1 3) Electrical characteristics (14) Lightning resistant electrode (V) Based on these samples, it can be seen in MBa-Pb-Sr The barium titanate series semiconductor ceramic composition with -Ca series as the main component can obtain a good flash withstand voltage characteristic value when the added amount of magnesium oxide calculated by M Mg is 0.028 mole%. Next, prepare a disc-shaped thermal resistor element with Ni-Ag electrodes selected from the samples in Tables 1 to 4 as appropriate, and measure its current attenuation characteristic value (P max) and scale. Current characteristic value. The results are listed in -15- This paper size applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) I ------ I I I--Λ. Loading · ----! I order · --111— (Please read the notes on the back before filling out this page) Printed on the '8 厶 Ο 5 Α7 ___ Β7_ by the Shelley Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (13) Table 1 below 2 in. In addition, the current attenuation characteristic (Paax) is the maximum P value when the selected peak value Ii is defined as the match amount (II -12) of the adjacent peak value 12 as P, as shown in FIG. 1, which is stable. The current characteristic value is the current value when the circuit is passed for 3 minutes after the start of the measurement. 〔Table 1 2〕 (1 5) Sample No. (1 6) Resistance value (Ω)

(17)Pmax(A)測定值：g3.4A(17) Measured value of Pmax (A): g3.4A

(1 8)穩定電流（raAp-p)測定值：忘4.9 mA 如上面表1 2中所示者，可以看出各具有用含有上述 本發明範圍内的主成分，半導劑，和氧化鎂Μ外的添加劑 及M Mg計算為fl. Q 028至Q. 093莫耳％範圍添加的氧化鎂之 樣品所形成的Ki-Ag電極之圓盤形式元件皆在電流衰減特 性值（Piaax)和穩定電流特性上顯示出優良的特性值。 如上文所說明者，經由使用本發明鈦酸鋇系列半導體 陶瓷組成物*可K改良急電流抗担特性值（閃耐電壓特性 值），由是¥Μ使熱變電阻器元件更為小型化。 再者，因為在使用本發明鈦酸鋇系列半等體陶瓷組成 物的情況中*也可在電流衰減特性和穩定電流特性上獲得 儍良的特性值，因而可使電可靠性更獲得改良。 雖然本發明已詳细且參考其特殊實施例而說明過*不 過對於諳於此技者明顯可知能夠給予各種變化和修改而不 -16- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） τ-------?·1-Ί-------- ^----!-1 •V . . ··.. (請先閲讀背面之注意事項再填寫本頁) A7 _B7 五、發明說明（14) 圍 範 與 意 0 明 發 .本 at 0 違 (請先閲讀背面之注意事項再填寫本頁) 我---------訂--- 線 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） i 41 8405 A7 B7 五、發明説明（i5 ) 經濟部智慧財產局員工消費合作社印製 表：1 (1) m (3) (4) 3 a 了 J Ο， c λ τ i ό~ 's r r I 0 . Pb 了丨 0, Μ π S I 0, M z 87 0 3 5 Y 0 4( 0. 05 2 0 本2 37 0 . 8 5 Y 0. 4 0. 05 2 0. 002B +3 87 0 8 5 Y 0. 4 0.05 2 0. 093 *4 36 1 3 5 Y 0. 4 0. 05 2 0 5 86 1 8 5 y 0. 4 0. 05 2 0. 0028 6 86 ^ 1 8 '5 Y 0 4 0. 05 2 0. 093 *7 86 ί 8 5 Y 0· 4 0. 05 2 a 150 8 84 3 3 5 y 0. 4 0. 05 2 0, 0028 9 84 3 8 5 Y o. 4 0. 05 2 0. 093 ^10 82 5 8 5 Y a. 4 0. 05 2 0/28 Π 72 15 3 5 Y 0. 4 0. 05 2 0 12 72 15 8 5 Y 0, 4 0. 05 2 0. 00028 *13 72 15 a ~ 5 Y 0, 4 0.05 2 0. 0028 14 72 15 a 5 Y a. 4 0. 05 2 0. 028 *15 72 15 8 5 Y 0. 4 0. 05 2 0.150 16 57 20 8 5 Y 0, 4 0.05 2 0. 028 *17「 S2 as 8 5 Y 0. 4 0.05 2 H 00028 木ia S2 25 B 5 Y 0. 4 0. 05 2 0.02S Μ 9 62 25 8 5 Y 0. 4 0. 05 2 0. 150 *20 57 30 3 3 Y CL 4 0. 05 2 0, 0028 *21 57 30 8 5 Y 0 ‘ 4 0. 05 2 0. 093 *22 SO 15 0 5 Y 0, 4 0. 05 2 Q 23 80 15 '0 5 V 0. 4 .0.05 2 0.093 24 79 15 1 5 Y 0. 4 0. 05 2 q 25 79 15 1 L 5 Y 0. 4 0.05 2 0, 0028 26 79 15 1 5 .. Y 0. 4 0. 05 2 0. 093 *27 73 15 2 5 I y Q· 4 0,05 2 0. 0023 ~m 78 15 2 5 I y 0* 4 0.05 2 0.093 *29 70 15 10 5 Y Q. 4 0. 05 2 q 本30 70 15 10 5 V 0. 4 0. 05 2 0. 0028 31 70 15 10 5 y 0. 4 0. OS 2 0. 150 *32 55 15 25 s Y 0. 4 0. 05 2 0 *33 55 15 25 5 Y 0, 4 0. 05 2 Q.093 34 50 15 30 5 Y 0. 4 0. 05 2 0 35 50 15 30 5 Y 0. 4 0. OS 2 0. 00028 +36 50 15 30 5 Y 0. 4 0. 05 2 0. 0028 <37 50 1S 30 5 y 0, 4 0.05 2 0. 028 *38 45 15 35 5 y 0· 4 0. 05 2 0 *39 45 15 35 5 Y 0. 4 0.05 2 0. 0028 18 - (請先閱讀背面之注意事項再Φ專本頁) 本紙張尺度適用中國國家標準（CNS ) A4規格（21 〇 X 297公釐） 丨 418405(18) Measured value of stable current (raAp-p): Forgot 4.9 mA As shown in Table 12 above, it can be seen that each has a main component, a semiconductive agent, and magnesium oxide within the range of the present invention. Additives outside M and M Mg are calculated as fl. Q 028 to Q. 093 mol%. Magnesium oxide was added to the disc-shaped elements of the Ki-Ag electrode formed from the samples in the range of current attenuation characteristics (Piaax) and stability. The current characteristics show excellent characteristic values. As described above, by using the barium titanate series semiconductor ceramic composition of the present invention *, it is possible to improve the sudden current withstand characteristic value (flash withstand voltage characteristic value), thereby reducing the size of the thermal resistor element by ¥ M . Furthermore, in the case of using the semi-isobaric ceramic composition of the barium titanate series of the present invention *, it is also possible to obtain unfavorable characteristics in terms of the current attenuation characteristics and the stable current characteristics, so that the electrical reliability can be further improved. Although the present invention has been described in detail and explained with reference to its specific embodiments *, it will be apparent to those skilled in the art that various changes and modifications can be made without -16- This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) τ -------? · 1-Ί -------- ^ ----!-1 • V.. ·· .. (Please read the notes on the back first (Fill in this page again) A7 _B7 V. Description of the invention (14) The scope and meaning 0 Mingfa. This at 0 is illegal (please read the precautions on the back before filling this page) I --------- Order --- Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Online Economics The paper size applies to the Chinese National Standard (CNS) A4 (210 X 297 mm) i 41 8405 A7 B7 V. Description of the Invention (i5) Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the employee consumer cooperative: 1 (1) m (3) (4) 3 a J 〇, c λ τ i ό ~ 'srr I 0. Pb 丨 0, Μ π SI 0, M z 87 0 3 5 Y 0 4 (0. 05 2 0 Ben 2 37 0. 8 5 Y 0. 4 0. 05 2 0. 002B +3 87 0 8 5 Y 0. 4 0.05 2 0. 093 * 4 36 1 3 5 Y 0. 4 0. 05 2 0 5 86 1 8 5 y 0. 4 0. 05 2 0. 0028 6 86 ^ 1 8 '5 Y 0 4 0. 05 2 0. 093 * 7 86 ί 8 5 Y 0 · 4 0. 05 2 a 150 8 84 3 3 5 y 0. 4 0. 05 2 0, 0028 9 84 3 8 5 Y o. 4 0. 05 2 0. 093 ^ 10 82 5 8 5 Y a. 4 0. 05 2 0/28 Π 72 15 3 5 Y 0. 4 0. 05 2 0 12 72 15 8 5 Y 0, 4 0. 05 2 0. 00028 * 13 72 15 a ~ 5 Y 0, 4 0.05 2 0. 0028 14 72 15 a 5 Y a. 4 0. 05 2 0. 028 * 15 72 15 8 5 Y 0. 4 0. 05 2 0.150 16 57 20 8 5 Y 0, 4 0.05 2 0. 028 * 17 「S2 as 8 5 Y 0. 4 0.05 2 H 00028 Mia S2 25 B 5 Y 0. 4 0. 05 2 0.02S Μ 9 62 25 8 5 Y 0. 4 0. 05 2 0. 150 * 20 57 30 3 3 Y CL 4 0. 05 2 0, 0028 * 21 57 30 8 5 Y 0 '4 0. 05 2 0. 093 * 22 SO 15 0 5 Y 0, 4 0. 05 2 Q 23 80 15 '0 5 V 0.4.0.05 2 0.093 24 79 15 1 5 Y 0. 4 0. 05 2 q 25 79 15 1 L 5 Y 0. 4 0.05 2 0, 0028 26 79 15 1 5 .. Y 0. 4 0. 05 2 0. 093 * 27 73 15 2 5 I y Q · 4 0,05 2 0. 0023 ~ m 78 15 2 5 I y 0 * 4 0.05 2 0.093 * 29 70 15 10 5 Y Q. 4 0. 05 2 q Ben 30 70 15 10 5 V 0. 4 0. 05 2 0. 0028 31 70 15 10 5 y 0. 4 0. OS 2 0. 150 * 32 55 15 25 s Y 0. 4 0. 05 2 0 * 33 55 15 25 5 Y 0, 4 0. 05 2 Q.093 34 50 15 30 5 Y 0. 4 0. 05 2 0 35 50 15 30 5 Y 0. 4 0. OS 2 0. 00028 +36 50 15 30 5 Y 0. 4 0. 05 2 0. 0028 < 37 50 1S 30 5 y 0, 4 0.05 2 0. 028 * 38 45 15 35 5 y 0 · 4 0. 05 2 0 * 39 45 15 35 5 Y 0. 4 0.05 2 0. 0028 18-(Please read the precautions on the back before Φ this page ) This paper size is applicable to China National Standard (CNS) A4 specification (21 × 297 mm) 丨 418405

7 B 五、發明説明（ie ) 表 2 經濟部智慧財產局員工消費合作社印製 (1) _ <2) (3) . S 丁 J 0, C « Τ ί 0 = S ί* Τ ί 〇, Pb T i 0? Mn 刍ί 〇, Μ z *40 45 15 35 5 Y 0. 4 0. 05 2 0. 093 *41 77 15 8 0 Y 0. 4 0. 05 2 0 42 77 15 8 0 Y .0.4 0. 05 2 0- 0028 43 76 15 8 T Y 0. 4 0. 05 2 0 44 75 15 a 1 y 0. λ- 0.05 2 o.o〇2a 45 76· 15 8 i 1 Y 0, 4 0.05 2 .0.093 46 75 15 .8 2 Y 0.4 0.05 2 0, 0028 47 75 15 8 2 r 0. 4 0. 05 2 d 093 48 67 15 3 10 Y 0, 4 0. 05 2 0. 028 49 57 15 a 20 Y 0. 4 0. 05 2 0. 028 50 47 15 3 30 Y Q. 4 0. 05 2 0. Q02B 51 47 15 8 30 Y 0, 4 0.05 2 0.093 +52 42 15. 8 35 y 0. 4 0. 05 2 0.028 53 37 15 8 40 Y 0, 4 0.05 2 0, 093 *54 37 15 8 40 Y 0. 4 0.05 2 0. 150 55 32 15 3 45 Y 0. 4 0. 05 2 0, 028 *56 27 15 3 50 Y 0, 4 0. 05 2 0 *57 27 15 8 50 Y 0. 4 0.05 2 0. QQ28 *58 22 15 8 60 y 0, 4 0.05 2 0 *59 22 15 8 60 Y 0. 4 0.05 2 0, 0028 木60 22 15 3 60 Y 0. 4 0. 05 2 0. 093 本61 72 15 8 5 Y 0. 1 0. 05 2 0 S2 72 15 S 5 Y 0. 1 0.05 2 0. 0028 S3 72 15 8 5 Y Q. 2 Q. 05 2 0. 00028 *64 72 15 8 5 Y 0. 2 0.05 2 Q- 002a *65 72 15 8 5 Y 0. 2 0.05 2 0. 028 66 72 15 S 5 y 0, 2 0. 05 2 0. 150 S7 72 . 15 3 5 Y 0. 3 0.05 2 0 +68 72 15 3 5 V 0.3 0-05 2 0.093 ^69 72 15· 8 5 Y 0, 8 0.05 2 0.093 70 72 15 3 5 Y 1,0 0. 05 2 0 71 72 15 a 5 Y 1 . 0 0. 05 2 0, 00028 72 72 15 8 5 Y 1.0 0, 05 2 0. 0028 *73 72 15 8 5 Y 1.0 0.05 2 0.028 *74 72 15 8 -5 Y 1 . 0 0. 05 2 0.033 *75 72 15 8 5 Y 1.0 0.05 2 0. 150 *76 72 15 8 5 Y 1.2 0.05 2 0 *77 72 15 3 5 Y 0. 05 2 0. 028 丨78 74 12 10 4 E p : 0. 1 0. 05 2 0. 028 *79 74 | 12 10 4 ε r ; 0. 2 0. 05 2 0 -19™ (請先聞讀背面之注意事項再填象本頁) 本紙張尺度適用中國國家標準（CNS > A4規格（210X29?公釐） A7 B7 五、發明説明（Π ) 表：3 經濟部智慧財產局員工消費合作社印製 (1) c I 广厶） a a r 1 〇: c« τ 丨 ο t S r T i O - P b Τ 1 〇 j Mn S I o ^ M s *80 74 12 10 4 |e r ;0 .2 0. 05 2 〇. 02a +81 74 12 10 4 |ε r ;0 .2 i 0.05 2 0. 150 82 74 12 10 4 \B r :〇 .A \ 0,05 2 0 33 74 12 10 4 |ε r ；a .4 1 0.05 2 0. 00028 34 74 12 10 4 ;0 .4 2 0. 0028 *35 74 12 10 4 ;0 .4 j 0. 05 2 0. 028 *86 74 12 10 4 |ε r ;0 r 4 j 0.05 2 0. 093 *87 74 12 10 4 丨£ r ;0 ,4 0. 05 2 0. 150 *88 74 12 10 4 ε r ;0 .4 0. 05 2 0. 200 83 74 12 10 4 £ r ;Q ,4 0. 05 2 0. 280 90 74 12 10 4 ;1 .C 0.05 2 .0 丰91 74 12 10 4 lE「 ;1 .0 0. 05 2 0. 0028 *92 74 12 10 4 ;T .〇i 0. 05 2 0, 093 *93 74 12 10 4 k r ;1 .0 ；0.05 2 0.150 *94 74 12 10 4 k r ;-i 0. 05 2 0 *95 74 12 10 4 |ε r ;1 • 2 1 0.05 2 0. 026 *96 72 15 8 5 ;0 • 1 0.05 2 0 . 97 72 15 8 5 L a : 0. *r a 〇5 2 0. 0028 98 72 15 8 5 L a ：0 Z a 〇5 2. g *99! 72 15 8 5 L a ；a Z 0. 05 2 0, 0028 *100 72 15 a 5 La :a z 0. 05 2 0,093 101 72 t5 8 5 La ；a z 0. 05 2 0. 150 102 72 15 a 5 L 4 ;0 5 0. 05 2 0 _3 72 15 8 5 La Ϊ 0 5 0. 05 2 0. 002B *104 7Z 15 a 〇 La ;0 5 0.05 2 0. 093 *105 72 15 8 5 L d ;0 5 0. 05 2 0. 150 ^106 72 15 8 5 L a ; 1 . 2 a. os 2 0 107 72 15 8 5 L a : 1 . 2 0. 05 2 0, 023 108 72 15 s 5 N d ;0 4 0. 05 2 0 ^109 72 15 8 5 N d ;0 4 0. 05 2 0. 0028 *110 72 15 8 5 N d ；0 4 0. 05 2 0.093 本川 72 t5 8 5 N d 0 4 0. 05 2 0. 150 +112 72 15 8 5 r 0. 4 0, 005 2 0 *113 72 15 3 5 Y 0. 4 0. 005 2 0, 0028 114 72 15 3 -5 Y 0. 4 0. 005 2 0, 093 115 72 15 8 5 Y 0. 4 0.01 2 0 *116 72 15 8 5 Y 0, 4 0. 01 2 0.0028 *117 72 15 8 5 Y 0. 4 0. 01 2 0. 093 ^118 72 15 8 5 Y 0. 4 0. 01 2 0. 150 119 72 15 a 5 Y 0. 4 0. 10 2 0 <請先閱讀背面之注意事項再4.-氣本頁) 本紙張尺度適用_國國家標準（0奶）人4規格（210'乂297公釐） A ^ B ^ " 418405 五、發明説明（18 ) A7 B7 表 4 (1) I_ / (L·) ! 3 a Τ ί 〇， C 屬丁 I 〇 ·., S r 了丨 Ο Ί P fa 丁丨 0 - W n 3 i 〇7 M z 120 72 15 8 5 Y 0.4 0, 10 2 0. 00028 本121 72 15 a 5 Y 0. 4 a io 2 0, 0023 ^22 72 15 3 5 Y 0.4 a io 2' 0, 093 *123 72 15 3 5 Y 0. 4 0. 10 2 0. 150 *124 72 15 8 5 Y 0. '4 0· 12 2 ,a *125 72 15 8 5 Y 0. 4 0-12 2 0. 028 *125 72 15 8 5 Y 0. 4 0. 12 0. 2 0 本127 72 15 8 .5 Y 0.4 0. 12 0.2 0. 0028 *128 72 15 3 5 Y 0. 4 0. 12 0.2 0. 093 +123 72 ,15 S 5 Y 0.4 0. 12 0.5 0 *130 72 15 3 5 Y 0； 4 0. 12 0.5 0. 0028 *131 72 15 3 〇 Y 0,4 0. 12 0_ 5 D. 093 + 132 72 15 8 5 Y 0,4 0.12 0.5. 0, 150 *133 72 15 8 5 Y 0. 4 0. 12 5 0 ^134 72 15 8 5 Y 0.4 0.12 5 0. 00028 *135 72 15 8 5 Y 0. 4 0.12 5 0. 0028 ^136 72 15 a S Y 0. 4 〇f 12 5 0, 028 . *137 72 15 8 5 Y 0.4 0.12 5 a 093 *138 72 15 8 5 Y 0, 4 0.12 5 0. 150 + 139 72 15 8 5 Y 0. 4 0. 12 8 0 *140 72 15 8 5 Y 0, 4 0, 12 i 0. 028 (請先閱讀背面之注意事項再填寫本頁) 訂 經濟部智慧財產局員工消費合作杜印製 -21- 本紙悵尺度逋用t國國家標準（CNS ) A4規格（2【OX297公釐） 84〇5 A7 B7 五、發明説明（19 ) 經濟部智慧財產局員工消費合作杜印製 ⑸ ⑹ ⑺ ⑻ ⑼ 本1 5, 7 200 125 180 本2 5. 1 130 125 180 本3 5. 1 180 125 200 Μ S. 8 200 125 . 225 5 5. 4 200 125 315 6 5.2 200 125 315 本7 14· 3 315 125 250 3 7. 3 250 129 355 9 7. 1 250 129 355 10 +CO ― — 11 7. 7 355 127 250 12 9,6 355 127 250 *13 9.4 315 127 400 14 3. 4 315 127 400 *15 22. 6 355 127 315 16 10. S 400 127 315 *17 Π.6 400 128 355 *18 t1.0 400 126 450 本13 27. 1 355 126 355 *20 38· 5 450 124 315 *21 39. 3' 450 124 315 *22 7.1 250 136 150 23 6. 1 2S0 136 150 24 8. 6 250 136 200 25 8.2 250 136 315 26 7.9 250 136 315 *27 8.2 250.. 135 355 28 7. 9 250 136 315 *29 10. 8 450 135 355 *30 9· 4 450 134 500 31 35. 5 400 135 400 *32 12· 0 500 56 355 幸33 10. 6 500 56 500 34 13.2 500 54 355 35 13. 5 500 54 355 *36 11,8 450 53- 500 *37 10.2 500 55 500 *38 19. 0 630 55 400 *39 18. 3 630 56 400 -22- 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公董） (請先間讀背面之注意事項再填寫本頁) --------;--------------訂— n n ml nn tn - JJ —in m 4\8A〇5 A7 B7 五、發明説明（20 ) 經濟部智慧財產局員工消費合作社印製 ⑸. .⑹ ⑺' ⑻ ⑼ +40 18. 5 630 54 400 *41 6. 1 224 91 120 42 5. 7 224 90 120 43 6. 3 250 90 150 44 5.7 250 ,S1 250 45 5. 5 280 90 225 46 S, 1 225 102 250 47 5. 7 225 103 250 48 13, 5 560 141 5Q0 49 21.0 630 195 630 50 26. 9 710 233 900 51 26. 5 710 231 900 *52 34. 2 aoo 239 1000 53 39. 5 800 258 1000 +54 180. 6 560 258 710 55 43, 4 800 281 1000 *56 82. 5 500 298 900 率57 68. 5 500 296 1000 *58 491.9 一 —— 一 *59 517. 5 — — *60 505. 7 — 一 一 *61 7. 1K 一 一 一 62 7. 1K 一 一 63 18. 1 560 123 500 *64 17.5 560 124 710 *65 17.3 560 124 630 66 43. 4 500 123 500 67 16. 7 500 122 450 *68 15. 3 500 124 630 *63 20. 4 560 123 710 70 22. 2 630 123 500 71 21. a 630 123 500 72 19.2 560 122 630 本73 18,8 550 124 S30 *74 18, 3 560 124 630 *75 50.3 500 122 500 *75 1.3K —- 一 一 ♦77 1.2K .— — 78 5. 7K 一 一 一 ★79 13.2 I S30 126 450 (請先聞讀背面之注意事項再填寫本頁) 訂 -23- 本紙張尺度適用t國國家標隼（CNS ) A4規格（210X297公釐^ ί 418405 - 五、發明説明（2i ) 經濟部智慧財產局具工消費合作社印製 (5). ⑹ ⑺ (3) '(9) +80 12, 2 630 127 630 *81 57-5 500 127 400 82 11.4 630 127 400 83 12, 0 630 123 400 841 9. 8 560 127 630 *85 ! 9.4 630 127 S30 ^86| 10.0 560 128 710 *87| 17.7 500 127 450 *88 65. 8 560 127 500 89 +〇〇 — 一 90 14. 7 S30 129 450 +91 13, 5 5 S0 128 630 *92 13. 0 5S0 129 710 *93 68. 7 630 129 500 *94 842.0 一 —™ — *95 803. 8 —* 一 —— *96 5. 7K —. — — 97 5. 1K 一 一 一 98 9. 2 500 124 450 +99 8.4 500 122 560 *100 3, 2 500 125 560 1Q1 31.2 500 124 450 102 '11.8 630 124 450 *103 10. 4 630 124 630 *104 10. 8 630 124 560 *105 54.2 500 123 450 *106 777. 3 一 一 107 815. 5 一 — 一 108 9,4 560 125 315 *109 8.4 500 125 500 *110 8.2 500 124 500 ^111 28. 1 500 125 400 *112 16.5 355 120 180 *113 15. 1 355 120 180 114 14. 6 355 120 180 ”5 18. 1 560 121 355 ★116 16.9 560 123 500 *117 16.3 560 121 500 川a 99. 1 450 121 450 119 21.0 630 122 500 {請先閱讀背面之注意事項再填寫本頁) 訂 本紙浪尺度適用中國國家標準（CNS ) A4規格（210X297公釐） f 4184 05 A? B7 五、發明説明（22 ) 表9 ⑸ ⑹ ⑺ ⑻ ⑼ 120 21, 4 630 121 500 本121 19. 6 S30 121 800 *122 19. 2 630 122 Θ00 *123 109* 2 500 121 560 *124 80, 7 300 121 800 *125 75. 6 800 121 800 *126 247. 2 一 122 一 *127 245. 8 — 122 — *128 235. 2 121 一 *129 82. 3 1000 121 800 +130 71.5 1000 120 800 *131 72. 8 1Q00 120 800 *132 437. 6 800 121 800 *133 55. 6 900 120 710 . *134 56. 3 900 119 710 *135 51.6 900 119 630 *136 50.3 900 119 630 *137 49. 1 800 120 630 *138 217. 1 800 119 630 *139 U0；：' — 一 一 *1401 U〇) 一 一 — (11) (11) S a P h R S I 0 2 Μη Μ ζ Τ c ra (a〇m) I (14) 201 89. 7 10 Y 0.3 1 0.03 0 170 .67 I 180 202 89. 7 10 Υ 0.3 1 0.Q3 0.Q03 170 63 130 203 89. 7 10 Υ 0.3 1 . 0. 03 0. 004 169 62 180 204 89. 7 10 Υ 0.3 1 0.03 0. 028 169 63 180 205 89. 7 10 Υ 0. 3 1 0. 03 0. 093 169 75 200 206 89. 7 10 Υ 0. 3 1 0.03 0. 150 168 200 250 207 89. 7 10 Υ 0. 3 1 0.03 0.200 167 1.9X103 — (請先閱讀背面之注意寧項再填寫本頁)7 B V. Description of the invention (ie) Table 2 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs (1) _ < 2) (3). S DING J 0, C «Τ ί 0 = S ί * Τ ί 〇 , Pb T i 0? Mn 〇, Μ z * 40 45 15 35 5 Y 0.4.05 2 0. 093 * 41 77 15 8 0 Y 0.4.05 2 0 42 77 15 8 0 Y .0.4 0. 05 2 0- 0028 43 76 15 8 TY 0. 4 0. 05 2 0 44 75 15 a 1 y 0. λ- 0.05 2 oo〇2a 45 76 · 15 8 i 1 Y 0, 4 0.05 2 .0.093 46 75 15 .8 2 Y 0.4 0.05 2 0, 0028 47 75 15 8 2 r 0. 4 0. 05 2 d 093 48 67 15 3 10 Y 0, 4 0. 05 2 0. 028 49 57 15 a 20 Y 0. 4 0. 05 2 0. 028 50 47 15 3 30 Y Q. 4 0. 05 2 0. Q02B 51 47 15 8 30 Y 0, 4 0.05 2 0.093 +52 42 15. 8 35 y 0 .4 0. 05 2 0.028 53 37 15 8 40 Y 0, 4 0.05 2 0, 093 * 54 37 15 8 40 Y 0. 4 0.05 2 0. 150 55 32 15 3 45 Y 0. 4 0. 05 2 0 , 028 * 56 27 15 3 50 Y 0, 4 0. 05 2 0 * 57 27 15 8 50 Y 0. 4 0.05 2 0. QQ28 * 58 22 15 8 60 y 0, 4 0.05 2 0 * 59 22 15 8 60 Y 0. 4 0.05 2 0, 0028 Wood 60 22 15 3 60 Y 0. 4 0. 05 2 0. 093 books 61 72 15 8 5 Y 0. 1 0. 05 2 0 S2 72 15 S 5 Y 0. 1 0.05 2 0. 0028 S3 72 15 8 5 Y Q. 2 Q. 05 2 0. 00028 * 64 72 15 8 5 Y 0. 2 0.05 2 Q- 002a * 65 72 15 8 5 Y 0. 2 0.05 2 0. 028 66 72 15 S 5 y 0, 2 0. 05 2 0. 150 S7 72. 15 3 5 Y 0. 3 0.05 2 0 +68 72 15 3 5 V 0.3 0-05 2 0.093 ^ 69 72 15 · 8 5 Y 0, 8 0.05 2 0.093 70 72 15 3 5 Y 1,0 0. 05 2 0 71 72 15 a 5 Y 1. 0 0. 05 2 0, 00028 72 72 15 8 5 Y 1.0 0, 05 2 0. 0028 * 73 72 15 8 5 Y 1.0 0.05 2 0.028 * 74 72 15 8 -5 Y 1. 0 0. 05 2 0.033 * 75 72 15 8 5 Y 1.0 0.05 2 0. 150 * 76 72 15 8 5 Y 1.2 0.05 2 0 * 77 72 15 3 5 Y 0. 05 2 0. 028 丨 78 74 12 10 4 E p: 0. 1 0. 05 2 0. 028 * 79 74 | 12 10 4 ε r; 0. 2 0. 05 2 0 -19 ™ (Please read the notes on the back before filling in this page) This paper size applies to Chinese national standards (CNS > A4 size (210X29? Mm) A7 B7 V. Description of invention (Π) : 3 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs (1) c I 广 厶) aar 1 〇: c «τ 丨 ο t S r T i O-P b Τ 1 〇j Mn SI o ^ M s * 80 74 12 10 4 | er; 0 .2 0. 05 2 〇. 02a +8 1 74 12 10 4 | ε r; 0 .2 i 0.05 2 0. 150 82 74 12 10 4 \ B r: 〇.A \ 0,05 2 0 33 74 12 10 4 | ε r; a .4 1 0.05 2 0. 00028 34 74 12 10 4; 0 .4 2 0. 0028 * 35 74 12 10 4; 0.4 j 0. 05 2 0. 028 * 86 74 12 10 4 | ε r; 0 r 4 j 0.05 2 0. 093 * 87 74 12 10 4 丨 £ r; 0,4 0. 05 2 0. 150 * 88 74 12 10 4 ε r; 0.4 .05 2 0. 200 83 74 12 10 4 £ r ; Q, 4 0. 05 2 0. 280 90 74 12 10 4; 1 .C 0.05 2 .0 Feng 91 74 12 10 4 lE "; 1. 0 0. 05 2 0. 0028 * 92 74 12 10 4; T .〇i 0. 05 2 0, 093 * 93 74 12 10 4 kr; 1.0; 0.05 2 0.150 * 94 74 12 10 4 kr; -i 0.05 2 0 * 95 74 12 10 4 | ε r ; 1 • 2 1 0.05 2 0. 026 * 96 72 15 8 5; 0 • 1 0.05 2 0. 97 72 15 8 5 L a: 0. * ra 〇5 2 0. 0028 98 72 15 8 5 L a: 0 Z a 〇5 2. g * 99! 72 15 8 5 L a; a Z 0. 05 2 0, 0028 * 100 72 15 a 5 La: az 0. 05 2 0,093 101 72 t5 8 5 La; az 0 . 05 2 0. 150 102 72 15 a 5 L 4; 0 5 0. 05 2 0 _3 72 15 8 5 La Ϊ 0 5 0. 05 2 0. 002B * 104 7Z 15 a 〇La; 0 5 0.05 2 0 . 093 * 105 72 15 8 5 L d; 0 5 0. 05 2 0 150 ^ 106 72 15 8 5 L a; 1. 2 a. Os 2 0 107 72 15 8 5 L a: 1. 2 0. 05 2 0, 023 108 72 15 s 5 N d; 0 4 0. 05 2 0 ^ 109 72 15 8 5 N d; 0 4 0. 05 2 0. 0028 * 110 72 15 8 5 N d; 0 4 0. 05 2 0.093 Honkawa 72 t5 8 5 N d 0 4 0. 05 2 0. 150 +112 72 15 8 5 r 0. 4 0, 005 2 0 * 113 72 15 3 5 Y 0. 4 0. 005 2 0, 0028 114 72 15 3 -5 Y 0. 4 0. 005 2 0 , 093 115 72 15 8 5 Y 0. 4 0.01 2 0 * 116 72 15 8 5 Y 0, 4 0. 01 2 0.0028 * 117 72 15 8 5 Y 0. 4 0. 01 2 0. 093 ^ 118 72 15 8 5 Y 0. 4 0. 01 2 0. 150 119 72 15 a 5 Y 0. 4 0. 10 2 0 < Please read the precautions on the back before 4.- Gas page) This paper size is applicable to China National standard (0 milk) person 4 specifications (210 '乂 297 mm) A ^ B ^ " 418405 V. Description of the invention (18) A7 B7 Table 4 (1) I_ / (L ·)! 3 a Τ ί 〇 , C belongs to Ding I 〇 .., S r 丨 〇 Ί P fa Ding 0-W n 3 i 〇7 M z 120 72 15 8 5 Y 0.4 0, 10 2 0. 00028 Ben 121 72 15 a 5 Y 0. 4 a io 2 0, 0023 ^ 22 72 15 3 5 Y 0.4 a io 2 '0, 093 * 123 72 15 3 5 Y 0. 4 0. 10 2 0. 150 * 124 72 15 8 5 Y 0. '4 0 · 12 2, a * 125 72 15 8 5 Y 0. 4 0-12 2 0. 028 * 125 72 15 8 5 Y 0. 4 0. 12 0. 2 0 Ben 127 72 15 8 .5 Y 0.4 0. 12 0.2 0. 0028 * 128 72 15 3 5 Y 0. 4 0. 12 0.2 0. 093 +123 72, 15 S 5 Y 0.4 0. 12 0.5 0 * 130 72 15 3 5 Y 0; 4 0. 12 0.5 0. 0028 * 131 72 15 3 〇Y 0, 4 0. 12 0_ 5 D. 093 + 132 72 15 8 5 Y 0, 4 0.12 0.5. 0, 150 * 133 72 15 8 5 Y 0. 4 0. 12 5 0 ^ 134 72 15 8 5 Y 0.4 0.12 5 0. 00028 * 135 72 15 8 5 Y 0. 4 0.12 5 0. 0028 ^ 136 72 15 a SY 0.4 4 〇f 12 5 0, 028. * 137 72 15 8 5 Y 0.4 0.12 5 a 093 * 138 72 15 8 5 Y 0, 4 0.12 5 0. 150 + 139 72 15 8 5 Y 0. 4 0. 12 8 0 * 140 72 15 8 5 Y 0, 4 0, 12 i 0. 028 (Please read the notes on the back before filling out this page) Order the consumer cooperation of the Intellectual Property Bureau of the Ministry of Economic Affairs Du printed -21 Standard (CNS) A4 specification (2 [OX297 mm) 84〇5 A7 B7 V. Invention description (19) Consumption cooperation by employees of the Intellectual Property Bureau of the Ministry of Economic Affairs 杜 ⑹ ⑺ ⑻ ⑼ ⑼ 1 5, 7 200 125 180 2 5. 1 130 125 180 Ben 3 5. 1 180 125 2 00 Μ S. 8 200 125. 225 5 5. 4 200 125 315 6 5.2 200 125 315 Ben 7 14 · 3 315 125 250 3 7. 3 250 129 355 9 7. 1 250 129 355 10 + CO ― — 11 7 . 7 355 127 250 12 9,6 355 127 250 * 13 9.4 315 127 400 14 3. 4 315 127 400 * 15 22. 6 355 127 315 16 10. S 400 127 315 * 17 Π.6 400 128 355 * 18 t1.0 400 126 450 Ben 13 27.1 1 355 126 355 * 20 38 · 5 450 124 315 * 21 39. 3 '450 124 315 * 22 7.1 250 136 150 23 6. 1 2S0 136 150 24 8. 6 250 136 200 25 8.2 250 136 315 26 7.9 250 136 315 * 27 8.2 250 .. 135 355 28 7. 9 250 136 315 * 29 10. 8 450 135 355 * 30 9 · 4 450 134 500 31 35. 5 400 135 400 * 32 12 · 0 500 56 355 Fortunate 33 10. 6 500 56 500 34 13.2 500 54 355 35 13. 5 500 54 355 * 36 11,8 450 53- 500 * 37 10.2 500 55 500 * 38 19. 0 630 55 400 * 39 18. 3 630 56 400 -22- This paper size is applicable to Chinese National Standard (CNS) A4 specification (210X297 public director) (Please read the precautions on the back before filling this page) -------- ; -------------- Order — nn ml nn tn-JJ —in m 4 \ 8A〇5 A7 B7 V. Invention Ming (20) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs ⑹. ⑹ ⑺ '⑻ ⑼ +40 18. 5 630 54 400 * 41 6. 1 224 91 120 42 5. 7 224 90 120 43 6. 3 250 90 150 44 5.7 250, S1 250 45 5. 5 280 90 225 46 S, 1 225 102 250 47 5. 7 225 103 250 48 13, 5 560 141 5Q0 49 21.0 630 195 630 50 26. 9 710 233 900 51 26 . 5 710 231 900 * 52 34.2 aoo 239 1000 53 39. 5 800 258 1000 +54 180. 6 560 258 710 55 43, 4 800 281 1000 * 56 82. 5 500 298 900 rate 57 68. 5 500 296 1000 * 58 491.9 one-one * 59 517. 5 — — * 60 505. 7 — one one * 61 7. 1K one one one 62 7. 1K one one 63 18. 1 560 123 500 * 64 17.5 560 124 710 * 65 17.3 560 124 630 66 43. 4 500 123 500 67 16. 7 500 122 450 * 68 15. 3 500 124 630 * 63 20. 4 560 123 710 70 22. 2 630 123 500 71 21. a 630 123 500 72 19.2 560 122 630 Ben 73 18,8 550 124 S30 * 74 18, 3 560 124 630 * 75 50.3 500 122 500 * 75 1.3K —- One ♦ 77 1.2K. — — 78 5. 7K One-to-One ★ 79 13.2 I S30 126 450 (Please read the Note: Please fill in this page again) Order-23- This paper size is applicable to the national standard of China (CNS) A4 specification (210X297 mm ^ ί 418405-V. Description of the invention (2i) Printed by the Industrial Property Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs (5). ⑹ ⑺ (3) '(9) +80 12, 2 630 127 630 * 81 57-5 500 127 400 82 11.4 630 127 400 83 12, 0 630 123 400 841 9. 8 560 127 630 * 85! 9.4 630 127 S30 ^ 86 | 10.0 560 128 710 * 87 | 17.7 500 127 450 * 88 65. 8 560 127 500 89 + 〇〇— 一 90 14. 7 S30 129 450 +91 13, 5 5 S0 128 630 * 92 13. 0 5S0 129 710 * 93 68. 7 630 129 500 * 94 842.0 one — ™ — * 95 803. 8 — * one — * 96 5. 7K —. — — 97 5. 1K one one one 98 9. 2 500 124 450 +99 8.4 500 122 560 * 100 3, 2 500 125 560 1Q1 31.2 500 124 450 102 '11 .8 630 124 450 * 103 10. 4 630 124 630 * 104 10. 8 630 124 560 * 105 54.2 500 123 450 * 106 777. 3 one to 107 815. 5 one to one 108 9,4 560 125 315 * 109 8.4 500 125 500 * 110 8.2 500 124 500 ^ 111 28. 1 500 125 400 * 112 16.5 355 120 180 * 113 15. 1 355 120 180 114 14. 6 355 120 180 ”5 18. 1 560 121 355 ★ 116 16.9 560 123 500 * 117 16.3 560 121 500 Sichuana 99. 1 450 121 450 119 21.0 630 122 500 {Please read the notes on the back before filling (This page) The size of the paper is applicable to the Chinese National Standard (CNS) A4 (210X297 mm) f 4184 05 A? B7 V. Description of the invention (22) Table 9 ⑸ ⑹ ⑺ ⑻ ⑼ 120 21, 4 630 121 500 copies 121 19. 6 S30 121 800 * 122 19. 2 630 122 Θ00 * 123 109 * 2 500 121 560 * 124 80, 7 300 121 800 * 125 75. 6 800 121 800 * 126 247. 2 -122-* 127 245. 8 — 122 — * 128 235. 2 121-* 129 82. 3 1000 121 800 +130 71.5 1000 120 800 * 131 72. 8 1Q00 120 800 * 132 437. 6 800 121 800 * 133 55. 6 900 120 710. * 134 56. 3 900 119 710 * 135 51.6 900 119 630 * 136 50.3 900 119 630 * 137 49. 1 800 120 630 * 138 217. 1 800 119 630 * 139 U0 ;: '— one by one * 1401 U〇) One by one-(11) (11) S a P h RSI 0 2 Μη Μ ζ Τ cra (a〇m) I (14) 201 89. 7 10 Y 0.3 1 0.03 0 170 .67 I 180 202 89. 7 10 Υ 0.3 1 0.Q3 0.Q03 170 63 130 203 89. 7 10 Υ 0.3 1. 0. 03 0. 004 169 62 180 204 89. 7 10 Υ 0.3 1 0.03 0. 028 169 63 180 205 89. 7 10 Υ 0. 3 1 0. 03 0. 093 169 75 200 206 89. 7 10 Υ 0. 3 1 0.03 0. 150 168 200 250 207 89. 7 10 Υ 0. 3 1 0.03 0.200 167 1.9X103 — (Please read the note on the back before filling this page )

、1T 經濟部智慧財產局員工消費合作社印製 表10 (11) (12) B 4 P b Sr c R S i 0 j Μ n M « T e Cc) P (¢2 c m) (14) 208 86. 6 12 8 15 y ； o. 4. 2 0. 05 0 170 64 315 209 66, δ 12 8 15 Y ; 0. 4 2 0.05 0. 003 170 59 400 210 66. 6 12 Q 15 Υ i 0.4 2 0. 05 0.004 170 57 450 211 66. S 12 8 15 V ： 0.4 2 0. 05 0. 014 169 53 450 212 66. 6 12 8 15 Y ; 0.4 2 0. 05 0.028 169 52 500 213 66. S 12 8 15 Y ； 0, 4 2 0. 05 0. 093 168 56 500 214 | 66. 6 12 3 15 | γ ； o. 4. 2 0. 05 0.150 168 120 355 215 66. 6 12 8 15 |y ； 〇. 4 2 0. 05 0. 200 167 600 355 -25- 張 紙 本 準 標 家 國 國 中 用 適 胁 讀 418405 A7 B7 五、發明説明（π ) 表11 (U) 12) (1J) S a P b 3 r C M R 3 1 05 Μ n Mg T σ (.c) a (¢2 cm) (14) I 216 100 0 0 0 丫； o 4 2 0. 05 0 129 22 70 I 217 100 0 .0 0 y ； 0 4 2 0.05 0. 0028 129 21 Γ 70 213 92 0 a 〇 Y ； 0 4- 2 0. 05 0 100 20 120 219 92 0 8 Q Y ; 0 4 2 Q. 05 0. 0028 100 19 120 220 35 0 0 15 V ； 0 4 2 0. 05 0 128 22 100 221 85 0 0 15 Y ； 0 4 2 0. 05 0.0028 128 19 70 222 37 5 8 0 Y ; 0 4 2 0,05 0 131 35 180 223 87 5 8 0 Y ; 0 4 2 0.05 0. 0028 131 32 150 224 80 5 0 15 Y : 0. 4 2 0.05 Q 136 34 150 225 30 5 0 15 Y ; 0, 4 2 0. 05 0. 0028 136 36 150 22S 77 0 8 15 Y ; 0. A 2 0. 05 0 91 29 120 227 77 0 8 15 Y : 0. 4 2 0.05 0,0023 90 27 120 228 95 5 0 0 丫； 0. 4 2 0. 05 0 138 23 100 229 95 5 0 0 γ ; 0. 4 2 ! 0.05 0. 0028 138 21 100 230 72 5 8 15 Y ; 0. 4 2 | 0. 05 0 127 36 250 231 72 5' 3 i 15 iY ； 0. 4 2 | 0,05 0.0028 127 33 4Q0 (讀先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標隼（CNS ) A4規格（210ΧΜ7公釐） 經濟部智慧財產局員工消費合作社印製 US) (16). (17) .(13) *70 22. 2 3. 5 2.4 *71 21.6 3.6 2.2 72 19.2 .3. 3 1.6 73 13. 8 3. 2 1.7 74 ia. 3 3.2 1. 7 *75 50.3 3.0 9.3 *82 11.4 3. 9 5. 6 +83 12.0 4. 1 5.6 . 84 9.8 3.4 4.8 85 9.4 3. 3 4. 8 86 10.0 3.4 4.9 *87 17. 7 2. 8 7.5 +88 SS. 8 2.6 8. 6 *89 4*00 — — *115 18. 1 3. 8 2.7 116 16.9 3,4 2.3 117 16. 3 3.4 2.2 *118 89. 1 3. 0 8.2 -26-, 1T Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economy 10 (11) (12) B 4 P b Sr c RS i 0 j Μ n M «T e Cc) P (¢ 2 cm) (14) 208 86. 6 12 8 15 y; o. 4. 2 0. 05 0 170 64 315 209 66, δ 12 8 15 Y; 0. 4 2 0.05 0. 003 170 59 400 210 66. 6 12 Q 15 Υ i 0.4 2 0 .05 0.004 170 57 450 211 66. S 12 8 15 V: 0.4 2 0. 05 0. 014 169 53 450 212 66. 6 12 8 15 Y; 0.4 2 0. 05 0.028 169 52 500 213 66. S 12 8 15 Y; 0, 4 2 0. 05 0. 093 168 56 500 214 | 66. 6 12 3 15 | γ; o. 4. 2 0. 05 0.150 168 120 355 215 66. 6 12 8 15 | y; 〇 〇 . 4 2 0. 05 0. 200 167 600 355 -25- Sheets of paper in quasi-standards for national and international use 418405 A7 B7 V. Description of the invention (π) Table 11 (U) 12) (1J) S a P b 3 r CMR 3 1 05 Μ n Mg T σ (.c) a (¢ 2 cm) (14) I 216 100 0 0 0 y; o 4 2 0. 05 0 129 22 70 I 217 100 0 .0 0 y ； 0 4 2 0.05 0. 0028 129 21 Γ 70 213 92 0 a 〇Y; 0 4- 2 0. 05 0 100 20 120 219 92 0 8 QY; 0 4 2 Q. 05 0. 0028 100 19 120 220 35 0 0 15 V; 0 4 2 0. 05 0 128 22 10 0 221 85 0 0 15 Y; 0 4 2 0. 05 0.0028 128 19 70 222 37 5 8 0 Y; 0 4 2 0,05 0 131 35 180 223 87 5 8 0 Y; 0 4 2 0.05 0. 0028 131 32 150 224 80 5 0 15 Y: 0.4 2 0.05 Q 136 34 150 225 30 5 0 15 Y; 0, 4 2 0. 05 0. 0028 136 36 150 22S 77 0 8 15 Y; 0. A 2 0 . 05 0 91 29 120 227 77 0 8 15 Y: 0.4 2 0.05 0,0023 90 27 120 228 95 5 0 0 yah; 0.4 2 0. 05 0 138 23 100 229 95 5 0 0 γ; 0 . 4 2! 0.05 0. 0028 138 21 100 230 72 5 8 15 Y; 0. 4 2 | 0. 05 0 127 36 250 231 72 5 '3 i 15 iY; 0. 4 2 | 0, 05 0.0028 127 33 4Q0 (Read the precautions on the back before you fill in this page) This paper size is applicable to China National Standard (CNS) A4 (210 × 7mm) Printed by the US Intellectual Property Bureau Employee Consumer Cooperatives (16). (17). ). (13) * 70 22. 2 3. 5 2.4 * 71 21.6 3.6 2.2 72 19.2 .3. 3 1.6 73 13. 8 3. 2 1.7 74 ia. 3 3.2 1. 7 * 75 50.3 3.0 9.3 * 82 11.4 3. 9 5. 6 +83 12.0 4. 1 5.6. 84 9.8 3.4 4.8 85 9.4 3. 3 4. 8 86 10.0 3.4 4.9 * 87 17. 7 2. 8 7.5 +88 SS. 8 2.6 8. 6 * 89 4 * 00 — — * 1 15 18. 1 3. 8 2.7 116 16.9 3, 4 2.3 117 16. 3 3.4 2.2 * 118 89. 1 3. 0 8.2 -26-

Claims (1)

A8 BS C8 D8 418405 六、申請專利範圍 1 種钛酸鋇糸列半導體陶瓷組成物，其包括由款 酸鋇或其固體溶疲構成的主成分* Μ及半導劑，和添加劑 ，其中，於該主成分内’ BaTith所含一部份Ba被1至25 莫耳％的（^，1至30冥耳％的31*，和1·至50莫耳％的？1)所 取代.；該半導劑的添加量為Κ元素計算時相對於100冥耳 %主成分之Q. 2至1.D其耳％ ;且有鼷上逑添加劑’氣化猛 的添加量為Μ Μη計算的〇 . Q1至D . 1Q其耳％ |氧化矽的添加 量為以Si〇2計算時的〇·5至5莫耳％，且氧化鎂的添加量 為以Mg計算時的0 · 〇〇 28至G . 0 9 3冥耳％。 2 .如申請專利範圍第1項之鈦酸鋇糸列半導體陶瓷 組成物，其中該半導劑為至少一種選自下列之ΐ的元素： Υ * La ? Ce， Nb， B i · Sb， W， Th * Ta > Dy * Gd， Nd，和 Si 0 (請先閱讀背面之注意事項再填寫表頁) ^ - 111 — — — — >1111111 . 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210x297公釐）A8 BS C8 D8 418405 VI. Application scope of patent 1 A barium titanate semiconductor semiconductor ceramic composition, which includes a main component of the barium titanate or its solid solvent, and a semiconducting agent, and additives, among which In the main component, a portion of Ba contained in BaTith is replaced by 1 to 25 mole% (^, 1 to 30 mole% 31 *, and 1 · to 50 mole%? 1) .; The The addition amount of the semiconducting agent is Q. 2 to 1. D of the main component relative to 100% of the main component of the ear when calculated by the K element; and the addition amount of the gasification agent 鼷 上 逑 is calculated by ΜΜη. Q1 to D. 1Q its ear% | The amount of silica added is 0.5 to 5 mole% when calculated as Si〇2, and the amount of added magnesium oxide is 0.5 · 〇28 to when calculated as Mg. G. 0 9 3% of ears. 2. The barium titanate semiconductor semiconductor ceramic composition according to item 1 of the application, wherein the semiconductor is at least one element selected from the group consisting of: Υ * La? Ce, Nb, Bi · Sb, W , Th * Ta > Dy * Gd, Nd, and Si 0 (Please read the notes on the back before filling in the form page) ^-111 — — — — > 1111111. Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Paper size applies to China National Standard (CNS) A4 (210x297 mm)
TW086116726A 1996-11-20 1997-11-10 Barium titanate series semiconductor porcelain composition TW418405B (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI618686B (en) * 2014-11-26 2018-03-21 村田製作所股份有限公司 Barium titanate-based semiconductor ceramic, barium titanate-based semiconductor ceramic composition, and positive characteristic thermal resistor for temperature sensing

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000095562A (en) * 1998-07-24 2000-04-04 Murata Mfg Co Ltd Raw material composition for positive temperature coefficient thermistor, porcelain for positive temperature coefficient thermistor, and production of its porcelain
JP2000143338A (en) * 1998-11-11 2000-05-23 Murata Mfg Co Ltd Semiconductive ceramic and semiconductive ceramic element produced by using the ceramic
JP3506044B2 (en) * 1999-04-28 2004-03-15 株式会社村田製作所 Semiconductor ceramic, semiconductor ceramic element, and circuit protection element
JP2001167904A (en) * 1999-12-09 2001-06-22 Murata Mfg Co Ltd Semiconductor ceramic and electronic device using the same
JP3855611B2 (en) * 2000-07-21 2006-12-13 株式会社村田製作所 Semiconductor ceramic and positive temperature coefficient thermistor
JP3554786B2 (en) * 2000-12-05 2004-08-18 株式会社村田製作所 Semiconductor ceramic, degaussing positive temperature coefficient thermistor, degaussing circuit, and method of manufacturing semiconductor ceramic
KR20030092720A (en) * 2002-05-31 2003-12-06 현대자동차주식회사 PTC ceramic compound having low electric resistivity
KR20030092719A (en) * 2002-05-31 2003-12-06 현대자동차주식회사 PTC compound for electric heater of vehicle
KR100880534B1 (en) * 2005-03-30 2009-01-28 가부시키가이샤 무라타 세이사쿠쇼 Magnesium compound sol, method for producing same, and method for producing ceramic material using same
CN100450934C (en) * 2005-06-14 2009-01-14 清华大学 Barium titanate low-dimensional nano powder material and its preparation method
JP4779466B2 (en) * 2005-06-30 2011-09-28 株式会社村田製作所 Barium titanate semiconductor porcelain composition
CN101127265B (en) * 2007-07-30 2011-04-20 韩城市华龙电子有限责任公司 Below curie point positive temperature coefficient PTCR heat-sensitive resistance element
JP5137780B2 (en) * 2008-10-27 2013-02-06 ニチコン株式会社 Positive thermistor porcelain composition
CN101402524B (en) * 2008-11-13 2011-04-27 常熟通富电子有限公司 Low-resistance, high-overpressure resistance barium titanate based ceramic thermal resistance and method of manufacturing the same
CN101891464B (en) * 2010-06-29 2012-12-05 东莞市沃力电子有限公司 High temperature thermistor and manufacturing method thereof
CN103889926B (en) * 2011-11-01 2015-07-01 株式会社村田制作所 PTC thermistor and method for manufacturing PTC thermistor
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CN103360053B (en) * 2012-03-26 2015-06-03 常熟市林芝电子有限责任公司 Thermal sensitive ceramic material, PTC (positive temperature coefficient) thermistor made from thermal sensitive ceramic material for constant temperature heating and manufacturing method of PTC thermistor
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CN113354410B (en) * 2021-06-01 2022-02-11 潮州三环（集团）股份有限公司 Ceramic material and preparation method and application thereof

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5546524A (en) * 1978-09-29 1980-04-01 Tdk Electronics Co Ltd Barium titanate semiconductor porcelain
JPS57157502A (en) * 1981-03-24 1982-09-29 Murata Manufacturing Co Barium titanate series porcelain composition
JP2569208B2 (en) * 1990-07-02 1997-01-08 セントラル硝子株式会社 Raw material powders for porcelain-based semiconductor porcelain composition and porcelain composition
JP2541344B2 (en) * 1990-06-08 1996-10-09 株式会社村田製作所 Electronic parts using barium titanate based semiconductor porcelain
JPH04104951A (en) * 1990-08-20 1992-04-07 Murata Mfg Co Ltd Barium titanate-based semiconductive porcelain material
JPH0551254A (en) * 1991-08-21 1993-03-02 Murata Mfg Co Ltd Barium titanate-containing semiconductor porcelain composition
JP3151566B2 (en) * 1991-09-13 2001-04-03 宇部興産株式会社 Barium titanate-based semiconductor material
JP3141642B2 (en) * 1993-09-06 2001-03-05 松下電器産業株式会社 Manufacturing method of PTC thermistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI618686B (en) * 2014-11-26 2018-03-21 村田製作所股份有限公司 Barium titanate-based semiconductor ceramic, barium titanate-based semiconductor ceramic composition, and positive characteristic thermal resistor for temperature sensing

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