JPH04170361A - Barium titanate-based semiconductor porcelain composition - Google Patents
Barium titanate-based semiconductor porcelain compositionInfo
- Publication number
- JPH04170361A JPH04170361A JP2296642A JP29664290A JPH04170361A JP H04170361 A JPH04170361 A JP H04170361A JP 2296642 A JP2296642 A JP 2296642A JP 29664290 A JP29664290 A JP 29664290A JP H04170361 A JPH04170361 A JP H04170361A
- Authority
- JP
- Japan
- Prior art keywords
- mol
- barium titanate
- based semiconductor
- semiconductor ceramic
- ceramic composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910002113 barium titanate Inorganic materials 0.000 title claims abstract description 33
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 title claims abstract description 31
- 239000004065 semiconductor Substances 0.000 title claims abstract description 31
- 239000000203 mixture Substances 0.000 title claims description 26
- 229910052573 porcelain Inorganic materials 0.000 title abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 9
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 7
- 239000000919 ceramic Substances 0.000 claims description 23
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 2
- 229910003781 PbTiO3 Inorganic materials 0.000 abstract description 3
- 229910052791 calcium Inorganic materials 0.000 abstract description 2
- 229910052712 strontium Inorganic materials 0.000 abstract description 2
- 229910002971 CaTiO3 Inorganic materials 0.000 abstract 1
- 229910002370 SrTiO3 Inorganic materials 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 9
- 238000002156 mixing Methods 0.000 description 6
- 239000000654 additive Substances 0.000 description 5
- 239000011572 manganese Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 3
- 229910052748 manganese Inorganic materials 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052762 osmium Inorganic materials 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910000807 Ga alloy Inorganic materials 0.000 description 1
- 101100513612 Microdochium nivale MnCO gene Proteins 0.000 description 1
- 229910052776 Thorium Inorganic materials 0.000 description 1
- 210000001015 abdomen Anatomy 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Thermistors And Varistors (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
この発明は、耐電圧特性に優れ、かつ、比抵抗の小さい
、正の抵抗温度特性を有するチタン酸バリウム系半導体
磁器組成物に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a barium titanate-based semiconductor ceramic composition that has excellent withstand voltage characteristics, low specific resistance, and positive resistance-temperature characteristics.
［従来の技術及び発明が解決しようとする課題］チタン
酸バリウム系半導体磁器組成物はチタン酸バリウム（Ｂ
ａＴｉＯｓ ）に半導体化剤としてＹ−Ｌａ、Ｃｅなど
の希土類元素、Ｎｂ、Ｂｉ、Ｓｂ、Ｗ−Ｔｈなどの元素
のうち少なくとも１種を、酸化物などの形で微量含有さ
せた半導体磁器組成物であり、温度制御用素子、電流制
御用素子その他種々の用途に広く用いられている。[Prior art and problems to be solved by the invention] A barium titanate-based semiconductor ceramic composition is a barium titanate (B
A semiconductor ceramic composition in which at least one of rare earth elements such as Y-La and Ce, and elements such as Nb, Bi, Sb, and W-Th is contained in a trace amount in the form of an oxide or the like in a TiOs) as a semiconducting agent. It is widely used as a temperature control element, a current control element, and other various uses.
チタン酸バリウム系半導体磁器組成物は、一般に常温に
おける比抵抗が小さく、キュリー点を越えると著しい正
の抵抗温度特性を示すという特徴を有している。このチ
タン酸バリウム系半導体磁器組成物にあっては、その主
成分であるチタン酸バリウムの影響により、キュリー点
は通常１２０℃付近にあるが、その用途によってはキュ
リー点を高温側あるいは低温側に移行させる必要が生じ
る場合がある。Barium titanate-based semiconductor ceramic compositions generally have a low specific resistance at room temperature, and exhibit a significantly positive resistance-temperature characteristic when the temperature exceeds the Curie point. The Curie point of this barium titanate-based semiconductor ceramic composition is usually around 120°C due to the influence of its main component, barium titanate. It may be necessary to migrate.
そこで、このキュリー点を高温側に移行させるためにＢ
ａの一部をｐｂで置換したり、あるいはキュリー点を低
温側に移行させるためにＢａの−部をＳｒで置換したり
、Ｔｉの一部をＺｒ、Ｓｎ等で置換したりすることか知
られている。Therefore, in order to shift this Curie point to the high temperature side, B
Is it possible to replace part of a with PB, or to shift the Curie point to a lower temperature side, replace part of Ba with Sr, or replace part of Ti with Zr, Sn, etc.? It is being
さらに、キュリー点を越えた後の、温度による抵抗の変
化率（抵抗温度変化率）を増大させるなめに、チタン酸
バリウム系半導体磁器組成物にＭｎを所定の割合で添加
することが知られている。Furthermore, it is known that Mn is added at a predetermined ratio to barium titanate-based semiconductor ceramic compositions in order to increase the rate of change in resistance due to temperature (rate of change in resistance with temperature) after the Curie point has been exceeded. There is.
また、常温における比抵抗を小さく、かつ、安定にする
ために、チタン酸バリウム系半導体磁器組成物にＳｉＯ
２を添加することが知られている。In addition, in order to reduce and stabilize the specific resistance at room temperature, we added SiO2 to the barium titanate-based semiconductor ceramic composition.
It is known to add 2.
そして、こうしたチタン酸バリウム系半導体磁器組成物
の耐電圧特性を向上させるために、ＢａＴ ｉ Ｏｓの
Ｂａの一部をＣａで、またはＣａ及びＳｒで置換し、さ
らに、添加剤としてマンガン、シリカを添加したチタン
酸バリウム系半導体磁器組成物が提案されている。しか
し、このチタン酸バリウム系半導体磁器組成物において
は、ＣａＴｉ Ｏｓの割合が３モル％以上、Ｓ ｒ Ｔ
ｉ Ｏｓの割合が１モル％以上、Ｐ ｂ Ｔ ｉ Ｏ
ｓの割合が１モル％以上であることから、比抵抗を１０
Ω・Ｃ１１以下にすると耐電圧（絶縁破壊電圧）を１０
０Ｖ／ａａｎ以上にすることができないため、種々の優
れた特性を有しているにもかかわらず、その用途が制約
されるという問題点かある。In order to improve the withstand voltage characteristics of such barium titanate-based semiconductor ceramic compositions, a part of Ba in BaT i Os is replaced with Ca or with Ca and Sr, and manganese and silica are added as additives. A barium titanate-based semiconductor ceramic composition has been proposed. However, in this barium titanate-based semiconductor ceramic composition, the proportion of CaTiOs is 3 mol% or more, S r T
The proportion of i Os is 1 mol% or more, P b T i O
Since the proportion of s is 1 mol% or more, the specific resistance is 10
If Ω・C is 11 or less, the withstand voltage (dielectric breakdown voltage) will be 10
Since it cannot be made higher than 0V/aan, there is a problem in that its applications are restricted despite having various excellent properties.
この発明は、上記問題点を解決するものであり、耐電圧
特性に優れ（１００Ｖ／＋ｍ＋以上）、かつ、比抵抗の
小さい（１０Ω・Ｃ１１以下）チタン酸バリウム系半導
体磁器組成物を提供することを目的とする。The present invention solves the above-mentioned problems, and provides a barium titanate-based semiconductor ceramic composition that has excellent withstand voltage characteristics (100 V/+m+ or more) and low specific resistance (10 Ω/C11 or less). With the goal.
［課題を解決するための手段及び作用］上記の目的を達
成するために、この発明のチタン酸バリウム系半導体磁
器組成物は、
チタン酸バリウム系の主成分に、マンガン、シリカ及び
半導体化剤を添加含有させたチタン酸バリウム系半導体
磁器組成物において、
前記主成分は、ＢａＴｉｏｓ 、５ｒＴｉＯｓ、Ｃａ
Ｔ ｉ Ｏｓ及びＰ ｂ Ｔ ｉ Ｏｓを：６５モル％
≦Ｂ ａ Ｔ ｉ Ｏｓ≦９３モル％１モル％≦５ｒＴ
ｉＯ，５２５モル％
０．０１モル％≦Ｃａ Ｔ ｉ Ｏｓ ＜ ３モル％５
モル％＜ Ｐ ｂ Ｔ ｉ Ｏｓ≦２０モル％の割合で
含有してなることを特徴とする。[Means and effects for solving the problems] In order to achieve the above object, the barium titanate-based semiconductor ceramic composition of the present invention includes manganese, silica, and a semiconducting agent in the barium titanate-based main components. In the barium titanate-based semiconductor ceramic composition containing additives, the main components include BaTios, 5rTiOs, Ca
T i Os and P b T i Os: 65 mol%
≦B a T i Os ≦93 mol% 1 mol% ≦5rT
iO, 525 mol% 0.01 mol%≦CaTiOs<3 mol%5
It is characterized in that it is contained in a ratio of mol%<P b T i Os ≦20 mol%.
この発明のチタン酸バリウム系半導体磁器組成物の主成
分は、ＢａＴｉＯｓ 、５ｒＴｉＯｉ、Ｃａ Ｔ ｉ
Ｏｓ及びＰ ｂ Ｔ ｉ Ｏｓを上記の割合で含有して
なるものである。The main components of the barium titanate-based semiconductor ceramic composition of the present invention are BaTiOs, 5rTiOi, and CaTiOi.
It contains Os and P b Ti Os in the above ratio.
Ｐ ｂ Ｔ ｉ Ｏｓ ＋ Ｓ ｒ Ｔ ｉ Ｏｓは単
独ではキュリー点をそれぞれ高温側、低温側に移行させ
るものであることが知られているが、Ｓ ｒ Ｔ ｉ
Ｏｓ、ＣａＴｉＯｓ及びＰｂＴｉＯ３を主成分の一部と
してＢ ａＴ ｉ Ｏｓに含有させることにより、耐電
圧値が向上するという効果がある。P b T i Os + S r T i Os alone is known to shift the Curie point to the high temperature side and low temperature side, respectively, but S r T i Os
By including Os, CaTiOs, and PbTiO3 as part of the main components in BaTiOs, there is an effect that the withstand voltage value is improved.
この発明のチタン酸バリウム系半導体磁器組成物におい
て、主成分中のＢ ａＴ ｉ Ｏｓの配合割合を６５〜
９３モル％としたのは、Ｂ ａＴ ｉ Ｏ３が６５モル
％未満である場合には半導体化が困難で、かつ比抵抗も
大きくなり、また、９３モル％を越えると電気的特性が
著しく低下するからである。In the barium titanate-based semiconductor ceramic composition of the present invention, the blending ratio of BaTiOs in the main component is 65 to 65.
The reason why it is set at 93 mol% is that if BaT i O3 is less than 65 mol%, it is difficult to make it into a semiconductor and the specific resistance becomes large, and if it exceeds 93 mol%, the electrical characteristics deteriorate significantly. It is from.
また、５ｒＴｉＯｓの配合割合を１〜２５モル％とした
のは、Ｓ ｒ Ｔ ｉ Ｏｓが１モル％未満では、特性
改善の効果が少なく、また２５モル％を上回ると電気的
特性か劣化するからである。In addition, the reason why the blending ratio of 5rTiOs is set to 1 to 25 mol% is because if SrTiOs is less than 1 mol%, the effect of improving the characteristics will be small, and if it exceeds 25 mol%, the electrical characteristics will deteriorate. It is.
さらに、Ｃａ Ｔ ｉ Ｏｓの配合割合を０．０１モル
％≦ＣａＴｉＯｓ＜３モル％としたのは、Ｃａ Ｔ ｉ
Ｏｓが０．０１モル％未満では、特性改善の効果が認
められず、また０、０１モル％以上であれば、他の主成
分との関係において３モル％未満でも所望の効果が得ら
れるからである。Furthermore, the blending ratio of CaTiOs was set to 0.01 mol%≦CaTiOs<3 mol% because CaTiOs
If Os is less than 0.01 mol%, the effect of improving properties is not recognized, and if it is 0.01 mol% or more, the desired effect can be obtained even if it is less than 3 mol% in relation to other main components. It is.
また、ＰｂＴｉＯ３の配合割合を
５モル％＜ Ｐ ｂ Ｔ ｉ Ｏ３≦２０モル％とした
のは、Ｐ ｂ Ｔ ｉ Ｏ３が５モル％以下では、特性
改善の効果が十分ではないが、上記の組成範囲内では、
他の主成分との関係において所望の効果が得られるから
である。In addition, the blending ratio of PbTiO3 was set to 5 mol% < P b Ti O 3 ≦ 20 mol % because if P b Ti O 3 is 5 mol % or less, the effect of improving properties is not sufficient, but the above composition Within the range,
This is because desired effects can be obtained in relation to other main components.
また、この発明のチタン酸バリウム系半導体磁器組成物
は半導体化のために、半導体化剤を添加しているが、こ
の半導体化剤としては、Ｙ、Ｌａ、Ｃｅなどの希土類元
素、Ｎｂ、Ｂｉ、Ｓｂ、Ｗ、Ｔｈなどの元素が例示され
る。そして、これらの元素のうち少なくとも１種を添加
するが、その添前蓋は、比抵抗を小さくする見地から０
１２〜１６０モル％の範囲であることが望ましい。In addition, the barium titanate-based semiconductor ceramic composition of the present invention has a semiconductor-forming agent added thereto for semiconductorization, and the semiconductor-forming agent includes rare earth elements such as Y, La, and Ce, Nb, and Bi. , Sb, W, and Th. At least one of these elements is added, but the lid before adding it is 0.
It is desirable that the content be in the range of 12 to 160 mol%.
さらに、添加剤としてマンガン（ＭｎＣＯ，等）を微量
添加するが、これは、マンガンを添加しＭｎＯ□として
含有させることによって、キュリー点を越えた後の正の
抵抗温度特性において、抵抗温度変化率を増大させるた
めである。その添加量はＭｎとして０．０３〜０．１０
モル％の範囲であることが、常温における抵抗を過度に
高くすることなく必要な添加効果を得るなめに好ましい
。Furthermore, a small amount of manganese (MnCO, etc.) is added as an additive, and by adding manganese and containing it as MnO□, the resistance temperature change rate in the positive resistance temperature characteristic after exceeding the Curie point is This is to increase the The amount added is 0.03 to 0.10 as Mn.
A range of mol % is preferable in order to obtain the necessary addition effect without excessively increasing the resistance at room temperature.
さらに、半導体化剤の添加量のわずかな変動によって生
じる比抵抗の変化を抑制し、常温における低い比抵抗を
得るためにシリカ（ＳｉＯ２＞を添加するが、その添加
量は５ｉ０２として０．５〜５モル％の範囲であること
が好ましい。Furthermore, silica (SiO2>) is added to suppress changes in resistivity caused by slight variations in the amount of the semiconductor agent added and to obtain a low resistivity at room temperature. It is preferably in the range of 5 mol%.
［実施例］
以下に、この発明の実施例及び比較例を示して発明をさ
らに詳細に説明する。[Example] The invention will be explained in more detail below by showing examples and comparative examples of the invention.
Ｋ良ヨ
主成分となるＢａｃＯｘ 、５ｒｃＯｓ 、ＣａＣＯ５
、Ｐ ｂ ｓ ０４ 、Ｔ ｉ ０２ 、半導体化剤で
あるＹ２Ｏ５、添加剤であるＭｎＣＯ５、Ｓｉｎ、を、
第１表に示す組成のチタン酸バリウム系半導体磁器組成
物が得られるような割合で配合し、湿式混合した。これ
を脱水、乾燥し１１５０℃で２時間仮焼して仮焼原料を
得た。それから２得られた仮焼原料を粉砕し、さらにバ
インダを加えて造粒し、成形圧力１０００ｋｌＨ／−で
成形して円板状の成形体を得た。そして、得られた成形
体を１３６０℃で１．５時間焼成し、直径１７．５ｍ、
厚さ０゜６市の円板状の半導体磁器を得た。BacOx, 5rcOs, CaCO5, which are the main components of Kyoyo
, P b s 04 , T i 02 , Y2O5 as a semiconducting agent, MnCO5 and Sin as additives,
They were mixed in such proportions that a barium titanate-based semiconductor ceramic composition having the composition shown in Table 1 was obtained, and wet-mixed. This was dehydrated, dried, and calcined at 1150° C. for 2 hours to obtain a calcined raw material. Then, the obtained calcined raw material was pulverized, a binder was added thereto, granulated, and molded at a molding pressure of 1000 klH/- to obtain a disc-shaped molded body. Then, the obtained molded body was fired at 1360°C for 1.5 hours, and the diameter was 17.5 m.
A disk-shaped semiconductor porcelain with a thickness of 0.6 cm was obtained.
Ｌ艶■
比較のため、上記実施例で用いた各原料を用い、配合割
合を変えて、この発明のチタン酸バリウム系半導体磁器
組成物の範囲外の組成とし、その他は、上記実施例と同
様の手順、条件でチタン酸バリウム系半導体磁器を製造
した。L gloss ■ For comparison, each raw material used in the above example was used, the blending ratio was changed to create a composition outside the range of the barium titanate semiconductor ceramic composition of the present invention, and the rest was the same as in the above example. Barium titanate-based semiconductor porcelain was manufactured using the following procedure and conditions.
上記実施例及び比較例のチタン酸バリウム系半導体磁器
について、両主面にＩｎ−Ｇａ合金の電極を形成し、こ
れを試料として常温（２５℃）における比抵抗、耐電圧
特性を測定した。その結果を第１表に示す。In--Ga alloy electrodes were formed on both principal surfaces of the barium titanate-based semiconductor ceramics of the above Examples and Comparative Examples, and the resistivity and withstand voltage characteristics at room temperature (25° C.) were measured using these as samples. The results are shown in Table 1.
なお、第１表において試料番号に＊印を付したものは比
較例の試料であり、その他は全てこの発明の実施例によ
る試料である。In Table 1, the sample numbers marked with * are samples of comparative examples, and all others are samples according to examples of the present invention.
また、第１表の比抵抗及び耐電圧の値は、下記の方法に
より測定した値である。Moreover, the values of specific resistance and withstand voltage in Table 1 are values measured by the following methods.
Ｌ監五
試料の抵抗値をデジタルマルチメータを用いて測定する
。そして、得られた測定値から、式％式％（）
により比抵抗を求める。Measure the resistance value of the L Kango sample using a digital multimeter. Then, from the obtained measured value, determine the specific resistance using the formula % formula % ().
但し、ρは比抵抗、Ｒは抵抗値、Ｓは表面積、Ｌは厚み
である。However, ρ is specific resistance, R is resistance value, S is surface area, and L is thickness.
肚！■
試料にＩＯＶの電圧を２分間印加した後その電流値を測
定する。それから、さらに５■高い電圧を１分間印加し
た後その電流値を測定する。上記のように前回より５Ｖ
高い電圧を印加する操作を繰り返し、測定した電流値が
、前回に測定した電流値よりも大きくなったときに、試
料は破壊点（ＴＮ点）に達したとして、−回前に印加し
た電圧を耐電圧とする。Belly! (2) Apply IOV voltage to the sample for 2 minutes and then measure the current value. Then, after applying a further 5cm higher voltage for 1 minute, the current value was measured. As above, 5V more than last time.
Repeat the operation of applying a high voltage, and when the measured current value becomes larger than the previously measured current value, it is assumed that the sample has reached the breakdown point (TN point), and the voltage applied - times before is Withstand voltage.
［以 下 余 白］
第１表に示すように、比較例においては、比抵抗を低く
押えるように配合割合を調整したものは耐電圧が低く、
また、耐電圧を重視してこれを高めようとすると比抵抗
が大きくなるという特性上の欠点を包含していることが
わかる。[Margin below] As shown in Table 1, in the comparative examples, those in which the blending ratio was adjusted to keep the resistivity low had a low withstand voltage;
Further, it can be seen that if an attempt is made to increase the withstand voltage with emphasis, the characteristic disadvantage is that the specific resistance increases.
これに対して、この発明の範囲内のチタン酸バリウム系
半導体磁器組成物は、耐電圧が１００ｖ／ｗＩ以上で、
比抵抗が１０Ω・Ｃ１１以下と、耐電圧及び比抵抗の両
方の特性において優れていることがわかる。On the other hand, the barium titanate-based semiconductor ceramic composition within the scope of the present invention has a withstand voltage of 100 v/wI or more,
It can be seen that the specific resistance is 10Ω·C11 or less, which is excellent in both characteristics of withstand voltage and specific resistance.
［発明の効果］
この発明のチタン酸バリウム系半導体磁器組成物は、Ｂ
ａＴｉＯｓ 、５ｒＴｉＯｓ 、ＣａＴｉＯｘ、ＰｂＴ
ｉＯ３を所定の割合で含有する主成分に添加剤と半導体
化剤とを添加含有させたものであり、比抵抗が小さく（
１０Ω・Ｃ１１以下）、かつ、耐電圧特性にも優れてお
り＜１００Ｖ／ｆｉ以上）、温度制御用素子、電流制御
用素子その他種々の用途に広く用いることができる。[Effect of the invention] The barium titanate-based semiconductor ceramic composition of this invention has B
aTiOs, 5rTiOs, CaTiOx, PbT
It contains additives and semiconducting agents to the main component containing iO3 in a predetermined proportion, and has a low specific resistance (
10Ω・C11 or less) and has excellent withstand voltage characteristics (<100V/fi or more), and can be widely used for temperature control elements, current control elements, and various other uses.
Claims (1)
カ及び半導体化剤を添加含有させたチタン酸バリウム系
半導体磁器組成物において、 前記主成分は、ＢａＴｉＯ＿３、ＳｒＴｉＯ＿３、Ｃａ
ＴｉＯ＿３及びＰｂＴｉＯ＿３を： ６５モル％≦ＢａＴｉＯ＿３≦９３モル％ １モル％≦ＳｒＴｉＯ＿３≦２５モル％ ０．０１モル％≦ＣａＴｉＯ＿３＜３モル％５モル％＜
ＰｂＴｉＯ＿３≦２０モル％ の割合で含有してなることを特徴とするチタン酸バリウ
ム系半導体磁器組成物。(1) In a barium titanate-based semiconductor ceramic composition in which manganese, silica, and a semiconducting agent are added to a barium titanate-based main component, the main components include BaTiO_3, SrTiO_3, Ca
TiO_3 and PbTiO_3: 65 mol%≦BaTiO_3≦93 mol% 1 mol%≦SrTiO_3≦25 mol% 0.01 mol%≦CaTiO_3<3 mol%5 mol%<
A barium titanate semiconductor ceramic composition containing PbTiO_3≦20 mol%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2296642A JP3003201B2 (en) | 1990-10-31 | 1990-10-31 | Barium titanate-based semiconductor porcelain composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2296642A JP3003201B2 (en) | 1990-10-31 | 1990-10-31 | Barium titanate-based semiconductor porcelain composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04170361A true JPH04170361A (en) | 1992-06-18 |
| JP3003201B2 JP3003201B2 (en) | 2000-01-24 |
Family
ID=17836181
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2296642A Expired - Lifetime JP3003201B2 (en) | 1990-10-31 | 1990-10-31 | Barium titanate-based semiconductor porcelain composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3003201B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5777541A (en) * | 1995-08-07 | 1998-07-07 | U.S. Philips Corporation | Multiple element PTC resistor |
| WO2004110952A1 (en) * | 2003-06-16 | 2004-12-23 | Toho Titanium Co., Ltd. | Barium titanate based semiconductor porcelain composition |
| WO2012132954A1 (en) | 2011-03-30 | 2012-10-04 | 株式会社村田製作所 | Semiconductor ceramic, and positive temperature coefficient thermistor |
-
1990
- 1990-10-31 JP JP2296642A patent/JP3003201B2/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5777541A (en) * | 1995-08-07 | 1998-07-07 | U.S. Philips Corporation | Multiple element PTC resistor |
| WO2004110952A1 (en) * | 2003-06-16 | 2004-12-23 | Toho Titanium Co., Ltd. | Barium titanate based semiconductor porcelain composition |
| WO2012132954A1 (en) | 2011-03-30 | 2012-10-04 | 株式会社村田製作所 | Semiconductor ceramic, and positive temperature coefficient thermistor |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3003201B2 (en) | 2000-01-24 |
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