JPS594802B2 - Kouyudenritsujikisobutsu - Google Patents

Kouyudenritsujikisobutsu

Info

Publication number
JPS594802B2
JPS594802B2 JP752721A JP272175A JPS594802B2 JP S594802 B2 JPS594802 B2 JP S594802B2 JP 752721 A JP752721 A JP 752721A JP 272175 A JP272175 A JP 272175A JP S594802 B2 JPS594802 B2 JP S594802B2
Authority
JP
Japan
Prior art keywords
dielectric constant
mol
temperature change
temperature
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP752721A
Other languages
Japanese (ja)
Other versions
JPS5176598A (en
Inventor
俊彦 宮沢
誠 小川
宏光 多木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP752721A priority Critical patent/JPS594802B2/en
Publication of JPS5176598A publication Critical patent/JPS5176598A/ja
Publication of JPS594802B2 publication Critical patent/JPS594802B2/en
Expired legal-status Critical Current

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  • Ceramic Capacitors (AREA)
  • Inorganic Insulating Materials (AREA)

Description

【発明の詳細な説明】 本発明は誘電率が高く、特にその温度変化率が著しく小
さく、さらに高周波における誘電正接の良好な新しい高
誘電率磁器組成物に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a new high dielectric constant ceramic composition that has a high dielectric constant, particularly a significantly small temperature change rate, and a good dielectric loss tangent at high frequencies.

従来より高誘電率を持つ磁器誘電体としては、チタン酸
バリウムを主成分とした磁器が用いられている事はすべ
に公知である。
It is well known that porcelain containing barium titanate as a main component has been used as a porcelain dielectric material having a high dielectric constant.

これらの磁器は高誘電率を持ちコンデンサ材料として多
く用いられているが、誘電率が高くなる程温度に対する
誘電率の温度変化が大きくなり、誘電率が約4000(
20℃において)以上になると変化率が50%以上(2
o℃〜85℃において)となり、また電圧によつても大
きく変化するため高誘電率を利用5 して高規格(EI
A規格×7R)の小型大容量のコンデンサを作製する事
は困難であつた。それは温度や電圧による変化あるいは
経時変化が大きいため容量の初期値を大きく余裕をとる
必要があるため充分その高誘電率が活用されていなかつ
た。10また温度変化率(+20℃〜+ 85℃)が比
較的小さなものでは誘電率がε=1500以上になるた
め十分容量がとれな<、高周波の損失角が悪くなるなど
多くの欠点があつた。
These porcelains have a high dielectric constant and are often used as capacitor materials, but the higher the dielectric constant, the greater the change in dielectric constant with respect to temperature, and the dielectric constant is about 4000 (
At 20°C) or higher, the rate of change is 50% or higher (at 20°C) or higher.
(at 0°C to 85°C) and also changes greatly depending on the voltage.
It was difficult to produce a small, large-capacity capacitor of A standard x 7R). Since it is subject to large changes due to temperature and voltage or changes over time, it is necessary to allow a large margin for the initial value of the capacitance, so its high dielectric constant has not been fully utilized. 10 Also, in the case of a capacitor with a relatively small rate of temperature change (+20°C to +85°C), the dielectric constant becomes ε=1500 or more, so there are many drawbacks such as insufficient capacitance and poor high-frequency loss angle. .

以上のようにチタン酸バリウム系を主体に改善15され
た材料も多くあるかつ、今だに無欠点な材料はなく高規
格用(−55℃〜+125℃に渡つて安定した特性を示
す。
As mentioned above, there are many improved materials mainly based on barium titanate, and there are still no defect-free materials for high-standard use (showing stable characteristics over a temperature range of -55°C to +125°C).

)のコンデンサ材料としては適さず、最近は誘電率が高
く温度変化率の小さな材料、さらには高周波における損
失角の良好なクo 材料が要望されている。また現在還
に比較的変化率の小さな材料としては、BaTi03−
ビスマス系、BaTi03−PbTi03系BaTi0
3−PbTi03−La2o3系、PbTiO3La2
O3・BTi02系等の材料が知られているが、これら
は誘電率が高くなると変ク5 化率が悪く、さらに高周
波の損失角が悪く公害問題においてはPb成分は有害物
であり、さらにPbOおよびBi2O3等は焼成中にお
ける蒸発が著しく、工業的に安定した磁器を得る事は困
難なものであつた。30本発明はこのような欠点を改善
し、小型大容量の高規格用磁器コンデンサ材料として有
用な新しい高誘電率磁器組成物を提供するものである。
) is not suitable as a capacitor material, and recently there has been a demand for a material with a high dielectric constant and a small temperature change rate, as well as a material with a good loss angle at high frequencies. In addition, BaTi03-
Bismuth type, BaTi03-PbTi03 type BaTi0
3-PbTi03-La2o3 system, PbTiO3La2
Materials such as O3/BTi02 series are known, but these have a poor conversion rate when the dielectric constant becomes high, and furthermore, the loss angle of high frequencies is poor and the Pb component is a harmful substance in terms of pollution problems, and furthermore, PbO , Bi2O3, etc. evaporate significantly during firing, making it difficult to obtain industrially stable porcelain. 30 The present invention improves these drawbacks and provides a new high dielectric constant ceramic composition useful as a material for small-sized, large-capacity, high-standard ceramic capacitors.

すなわち、本発明の磁器組成物は、あらかじめ単一固溶
体になつているBaTi02成分粉末3592.35〜
99.45モル%、Nb2050.45〜5.65モル
Cf6、Mn020.10〜2.00モル%の組成物に
対し、添加物として前記組成物の重量に対する重量比で
Bl2O3を0.2〜1.5wt%含有させることを特
徴とする高誘電率磁器組成物である。前記範囲内の組成
比を変化する事によつて誘電率を約1500〜3500
前後の範囲で自由に選ぶことができ、しかも温度変化率
が−55℃〜+125℃の温度範囲で±15%以内の磁
器コンデンサを提供できる。
That is, the porcelain composition of the present invention contains BaTi02 component powder 3592.35~
For a composition containing 99.45 mol% of Nb205, 0.45 to 5.65 mols of Cf6, and 0.10 to 2.00 mol% of Mn0, Bl2O3 is added as an additive in a weight ratio of 0.2 to 1 to the weight of the composition. This is a high dielectric constant ceramic composition characterized by containing .5 wt%. By changing the composition ratio within the above range, the dielectric constant can be adjusted to about 1500 to 3500.
It is possible to provide a ceramic capacitor that can be freely selected within the range of the above and below, and has a temperature change rate within ±15% in the temperature range of -55°C to +125°C.

また本発明範囲内で得られたコンデンサ材料は誘電率が
高く、容量温度変化率が小さく、さらに高周波の損失角
(IMHZ)が著しく良好であるとともに耐電圧が高い
特性を示すものである。なお本発明のBaTlO3,N
b2O5,MnO2等のそれぞれの成分限定理由は次の
如くである。
Further, the capacitor material obtained within the scope of the present invention has a high dielectric constant, a small rate of change in capacitance with temperature, an extremely good high frequency loss angle (IMHZ), and a high withstand voltage. In addition, BaTlO3,N of the present invention
The reason for limiting each component of b2O5, MnO2, etc. is as follows.

すなわち単一固溶体になつているBaTiO3成分粉末
が99.45モル%以上では誘電率が小さく、さらには
高周波の損失角が悪く、温度変化率が大きくなるため好
ましくない。92.35モル%以下では磁器素体の焼結
性が不安定になり温度変化率が大きくなるため好ましく
ない。
That is, if the BaTiO three component powder, which is a single solid solution, exceeds 99.45 mol %, the dielectric constant will be low, the loss angle of high frequencies will be poor, and the temperature change rate will be large, which is not preferable. If it is less than 92.35 mol %, the sinterability of the ceramic body becomes unstable and the rate of temperature change becomes large, which is not preferable.

Nb2O5成分が5.65モル%以上では誘電率が低下
するため好ましくない。0.45モル%以下では高周波
の損失角が悪化するため好ましくない。
If the Nb2O5 component is 5.65 mol% or more, the dielectric constant decreases, which is not preferable. If it is less than 0.45 mol %, the high frequency loss angle will deteriorate, which is not preferable.

またMnO2成分、2.00モル%以上では、温度変化
率は小さくなるが極度に誘電率が低下し損失角も悪くな
る。
Furthermore, if the MnO2 component is 2.00 mol % or more, the temperature change rate will be small, but the dielectric constant will be extremely low and the loss angle will also be bad.

0.10モル%以下では誘電率の温度変化率を小さくす
る効果が乏しくなるため好ましくない。
If it is less than 0.10 mol %, the effect of reducing the temperature change rate of dielectric constant becomes poor, which is not preferable.

Bi2O3成分1.5wt%以上では、温度変化率は小
さくなるが高周波の損失角が極度に悪くなる。0.2w
t%以下では、誘電率の温度変化率を小さくする効果が
乏しくなり、耐スポーリング特性も悪くなる。
When the Bi2O3 component is 1.5 wt% or more, the temperature change rate becomes small, but the high frequency loss angle becomes extremely poor. 0.2w
If it is less than t%, the effect of reducing the temperature change rate of the dielectric constant becomes poor, and the spalling resistance also deteriorates.

なお本発明VC}いてあらかじめの単一固溶体になつて
いるBaTiO3成分粉末を用いる事は温度変化率を小
さくすると共に再現性を得るために必要な条件である。
またMnO2成分の添加は従来BaTiO3系磁器の焼
成に於いては、還元性を防止する為に微量のMnO2を
添加している事は周知の事実であつた。即ち絶縁抵抗値
、又は損失角の特性値の劣化を最小限にくいとめるため
添加していたものであつた。しかしながら本発明は従来
のMnO2の添加の効果とは全く異なる作用効果を発揮
するものである。
Note that the use of BaTiO three component powder, which has already become a single solid solution in the VC of the present invention, is a necessary condition for reducing the temperature change rate and obtaining reproducibility.
Furthermore, it is a well-known fact that in the firing of BaTiO3-based porcelain, a trace amount of MnO2 is added to prevent reducibility. That is, it was added to minimize the deterioration of the characteristic values of insulation resistance or loss angle. However, the present invention exhibits effects that are completely different from those of the conventional addition of MnO2.

即ち、MnO2とNB2O5,と同時添加によつてチタ
ン酸パリウムのキユ一り一点をそのままの位置にとめ、
かつ誘電率温度特性、誘電正接などの特性に於いて著し
い効果を発揮するものである。またBaTiO3成分を
生原料のままで用いたのでは他の成分と容易に固溶して
しまい特性を改善する効果がなくなるものである。すな
わち本発明は上記組成範囲内のBaTiO3(単一固溶
体)組成物にNb2O5成分−MnO2成分卦よびBi
2O3成分を同時添加する事によつて初めて誘電率が高
く、広い温度範囲に渡つて容量温度変化率が小さく、ま
た高周波の損失角が小さく、耐電圧が高い著しく良好な
特性を得るものである。
That is, by simultaneously adding MnO2 and NB2O5, each cue of pallium titanate is held in the same position,
Moreover, it exhibits remarkable effects on properties such as dielectric constant temperature characteristics and dielectric loss tangent. Furthermore, if the BaTiO3 component is used as a raw material, it will easily form a solid solution with other components, and the effect of improving properties will be lost. That is, the present invention adds the Nb2O5 component-MnO2 component triangle and Bi to the BaTiO3 (single solid solution) composition within the above composition range.
By simultaneously adding the 2O3 component, it is possible to obtain extremely good characteristics such as a high dielectric constant, a small capacitance temperature change rate over a wide temperature range, a small loss angle at high frequencies, and a high withstand voltage. .

以下に本発明の実施例を挙げ具体的に説明する。EXAMPLES The present invention will be specifically explained below with reference to Examples.

試料の調整工程としては、まず最初に等モルのBacO
3とTiO2をそれぞれ混合し、その後1050℃〜1
200℃で1時間仮焼し、粉砕を行ない、その後表に示
したそれぞれの割合に混合した。BaTiO3固溶体は
X線により単一固溶体になつている事を確認した。な訃
磁器の緻密化を促進するために0.3wt#)のAl2
O3とSiO2をそれぞれ添加した。混合は不純物の混
入を防止するためウレタン内張ポツトミルおよびウレタ
ンライニングポールを用い湿式混合を行なつた。その後
水分を蒸発させ、成型は15ψ×1.2m/mの円板を
圧力約750Kf/Cdで加圧成型し、焼成はエレマ発
熱体を利用した電気炉で温度1280℃〜1400℃2
時間保持で行なつた。得られた磁器素子は両面に銀電極
液を塗布し、750℃15分で焼付しそれぞれの電気特
性を測定した。な卦、本実施例に卦いてBaTiO3は
、等モルの組成比のものを用いたが、0.5モル%前後
、その比率がずれても良好な特性を得る事が出来た。
In the sample preparation process, first, equimolar BacO
3 and TiO2, respectively, and then heated to 1050℃~1
The mixture was calcined at 200° C. for 1 hour, pulverized, and then mixed in the proportions shown in the table. It was confirmed by X-rays that the BaTiO3 solid solution had become a single solid solution. 0.3wt#) of Al2 to promote the densification of mortuary porcelain.
O3 and SiO2 were added respectively. Wet mixing was performed using a urethane-lined pot mill and a urethane-lined pole to prevent contamination of impurities. After that, the moisture is evaporated, and a 15ψ x 1.2 m/m disc is press-molded at a pressure of about 750 Kf/Cd, and fired at a temperature of 1280°C to 1400°C2 in an electric furnace using an Elema heating element.
I did it by keeping time. The obtained ceramic elements were coated with silver electrode solution on both sides, baked at 750°C for 15 minutes, and their electrical properties were measured. Although BaTiO3 having an equimolar composition ratio was used in this example, good characteristics could be obtained even if the ratio was shifted by about 0.5 mol%.

な卦本実施例ではMnO2成分を用いたが他のマンガン
塩類でも同じ効果が得られるものである。また、ストロ
ンチウム、カルシウム、マグネシウム等の微量添加は、
特性の改善に効果がある。次の表は本発明による組成物
の多数の実施例である。な卦耐熱スポーリング特性の測
定条件としては、焼結した素子を350℃に上昇してい
る半田槽中へ挿入し、その後、1mの高さより厚さ3X
のアルミウム板上へ落下させたときの破損数を調べた。
ここで半田槽中へ挿入したときに割れたものも破損数と
考える。表中3/10は10個テスト中3個割れたこと
を示している。前記表VC卦いてA1〜17,30〜3
6が本発明の範囲内の実施例であり、その他は範囲外の
実施例である。
Although the MnO2 component was used in this example, the same effect can be obtained with other manganese salts. In addition, trace additions of strontium, calcium, magnesium, etc.
Effective in improving characteristics. The following table is a number of examples of compositions according to the invention. The conditions for measuring heat-resistant spalling characteristics are as follows: insert the sintered element into a solder bath heated to 350°C, and then
We investigated the number of breakages when dropped onto an aluminum plate.
Here, items that break when inserted into the solder bath are also considered to be the number of breaks. In the table, 3/10 indicates that 3 out of 10 pieces were broken. Above table VC number A1-17, 30-3
6 is an example within the scope of the present invention, and the others are examples outside the scope.

本発明の範囲内の試料はいずれも非常に緻密な磁器を得
る事が出来る。また電気特性は従来迄の公知の同一程度
の温度変化率を有する材料に比べ誘電率が高く、高周波
の誘電正接が良く、また温度変化率も広い温度範囲に渡
つて小さく安定した特性を有している。さらに実施例に
は示さなかつたが破壊電圧も良好なものである。なお、
本実施例において應1〜17,30〜36は誘電率誘電
正接、高周波の誘電正接、誘電率温度変化率もよく、コ
ンデンサ材料として最適である。特に黒13,14は誘
電率が高く、誘電率温度変化率が小さく、高周波の誘電
正接が小さく良好である。また屋18〜27迄は誘電率
が小さく、誘電率温度変化率が悪く、高周波の誘電正接
も大きく、コンデンサ材料として悪いものである。また
屋28〜29,は誘電率、誘電率温度変化率が良好であ
るが、耐スポーリング特性が非常に悪いものであつた。
またJff).37〜40迄は誘電率は良好であるが、
高周波の誘電正接、耐スポーリング特性、誘電率温度変
化率が非常に悪いものであつた。また屋41は範囲内の
組成物に於いて、BaTiO3成分を生原料で置換した
ものであるが、誘電率、温度変化率、誘電正接等良好な
特性を得ることが出きなかつた。以上のように単一固溶
体になつているBaTiO3粉末を用い、範囲内の副成
分を添加することによつて良好な特性を得る事が出来る
All samples within the scope of the present invention can yield very fine porcelain. In addition, its electrical properties have a higher dielectric constant than conventional materials with the same temperature change rate, a good high-frequency dielectric loss tangent, and a small and stable temperature change rate over a wide temperature range. ing. Furthermore, although not shown in the examples, the breakdown voltage is also good. In addition,
In this example, materials Nos. 1 to 17 and 30 to 36 have good dielectric loss tangent, high frequency dielectric loss tangent, and temperature change rate of dielectric constant, and are optimal as capacitor materials. In particular, blacks 13 and 14 have a high dielectric constant, a small rate of change in dielectric constant with temperature, and a small dielectric loss tangent at high frequencies. Moreover, the dielectric constants from ya 18 to ya 27 are low, the rate of change of dielectric constant with temperature is poor, and the dielectric loss tangent at high frequencies is large, making them poor materials for capacitors. Moreover, although the dielectric constant and the temperature change rate of the dielectric constant were good in Nos. 28 and 29, the spalling resistance was very poor.
Also Jff). The dielectric constant is good from 37 to 40, but
The dielectric loss tangent at high frequencies, anti-spalling characteristics, and rate of change in dielectric constant with temperature were very poor. In addition, Ya 41 was a composition within the range in which the BaTiO3 component was replaced with a raw material, but good properties such as dielectric constant, temperature change rate, and dielectric loss tangent could not be obtained. Good properties can be obtained by using the BaTiO3 powder which has become a single solid solution as described above and adding subcomponents within the range.

Claims (1)

【特許請求の範囲】[Claims] 1 あらかじめ単一固溶体になつているBaTiO_3
成分粉末92.35〜99.45%モル%、Nb_2O
_50.45〜5.65モル%、MnO_2・0.10
〜2.00モル%の組成物に対し、添加物として前記組
成物の重量に対する重量比でBi_2O_3を0.2〜
1.5wt%含有することを特徴とする高誘電率磁器組
成物。
1 BaTiO_3, which has already become a single solid solution
Component powder 92.35-99.45% mol%, Nb_2O
_50.45-5.65 mol%, MnO_2・0.10
~2.00 mol% of the composition, Bi_2O_3 is added as an additive at a weight ratio of 0.2 to 2.00 mol% to the weight of the composition.
A high dielectric constant ceramic composition characterized by containing 1.5 wt%.
JP752721A 1974-12-27 1974-12-27 Kouyudenritsujikisobutsu Expired JPS594802B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP752721A JPS594802B2 (en) 1974-12-27 1974-12-27 Kouyudenritsujikisobutsu

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP752721A JPS594802B2 (en) 1974-12-27 1974-12-27 Kouyudenritsujikisobutsu

Publications (2)

Publication Number Publication Date
JPS5176598A JPS5176598A (en) 1976-07-02
JPS594802B2 true JPS594802B2 (en) 1984-02-01

Family

ID=11537160

Family Applications (1)

Application Number Title Priority Date Filing Date
JP752721A Expired JPS594802B2 (en) 1974-12-27 1974-12-27 Kouyudenritsujikisobutsu

Country Status (1)

Country Link
JP (1) JPS594802B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5668569B2 (en) * 2011-03-28 2015-02-12 Tdk株式会社 Dielectric porcelain composition and electronic component

Also Published As

Publication number Publication date
JPS5176598A (en) 1976-07-02

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