JPH04170360A - Barium titanate-based semiconductor porcelain composition - Google Patents
Barium titanate-based semiconductor porcelain compositionInfo
- Publication number
- JPH04170360A JPH04170360A JP2296641A JP29664190A JPH04170360A JP H04170360 A JPH04170360 A JP H04170360A JP 2296641 A JP2296641 A JP 2296641A JP 29664190 A JP29664190 A JP 29664190A JP H04170360 A JPH04170360 A JP H04170360A
- Authority
- JP
- Japan
- Prior art keywords
- mol
- barium titanate
- based semiconductor
- semiconductor ceramic
- ceramic composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910002113 barium titanate Inorganic materials 0.000 title claims abstract description 32
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 title claims abstract description 30
- 239000004065 semiconductor Substances 0.000 title claims abstract description 30
- 239000000203 mixture Substances 0.000 title claims description 24
- 229910052573 porcelain Inorganic materials 0.000 title abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 9
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 5
- 239000000919 ceramic Substances 0.000 claims description 22
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 2
- 229910002971 CaTiO3 Inorganic materials 0.000 abstract 1
- 229910003781 PbTiO3 Inorganic materials 0.000 abstract 1
- 229910002370 SrTiO3 Inorganic materials 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 8
- 238000002156 mixing Methods 0.000 description 6
- 239000000654 additive Substances 0.000 description 5
- 239000011572 manganese Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 3
- 229910052748 manganese Inorganic materials 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 229910052776 Thorium Inorganic materials 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910000807 Ga alloy Inorganic materials 0.000 description 1
- 101100513612 Microdochium nivale MnCO gene Proteins 0.000 description 1
- 101100341175 Mus musculus Irgm1 gene Proteins 0.000 description 1
- WFWLQNSHRPWKFK-UHFFFAOYSA-N Tegafur Chemical compound O=C1NC(=O)C(F)=CN1C1OCCC1 WFWLQNSHRPWKFK-UHFFFAOYSA-N 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
この発明は、耐電圧特性に優れ、かつ、比抵抗の小さい
、正の抵抗温度特性を有するチタン酸バリウム系半導体
磁器組成物に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a barium titanate-based semiconductor ceramic composition that has excellent withstand voltage characteristics, low specific resistance, and positive resistance-temperature characteristics.
［従来の技術及び発明が解決しようとする課Ｍ］チタン
酸バリウム系半導体磁器組成物はチタン酸バリウム（Ｂ
ａＴｉＯ３）に半導体化剤としてＹ、Ｌａ、Ｃｅなどの
希土類元素、Ｎｂ、Ｂｉ、Ｓｂ、Ｗ、Ｔｈなどの元素の
うち少なくとも１種を、酸化物などの形で微量含有させ
た半導体磁器組成物であり、温度制御用素子、電流制御
用素子その他種々の用途に広く用いられている。[Problem M to be solved by the prior art and the invention] A barium titanate-based semiconductor ceramic composition is a barium titanate (B
A semiconductor ceramic composition in which at least one of rare earth elements such as Y, La, Ce, and elements such as Nb, Bi, Sb, W, and Th is contained in a small amount in the form of an oxide or the like in aTiO3) as a semiconducting agent. It is widely used as a temperature control element, a current control element, and other various uses.
チタン酸バリウム系半導体磁器組成物は、一般に常温に
おける比抵抗が小さく、キュリー点を越えると著しい正
の抵抗温度特性を示すという特徴を有している。このチ
タン酸バリウム系半導体磁器組成物にあっては、その主
成分であるチタン酸バリウムの影響により、キュリー点
は通常１２０℃付近にあるが、その用途によってはキュ
リー点を高温側あるいは低温側に移行させる必要が生じ
る場合がある。Barium titanate-based semiconductor ceramic compositions generally have a low specific resistance at room temperature, and exhibit a significantly positive resistance-temperature characteristic when the temperature exceeds the Curie point. The Curie point of this barium titanate-based semiconductor ceramic composition is usually around 120°C due to the influence of its main component, barium titanate. It may be necessary to migrate.
そこで、このキュリー点を高温側に移行させるためにＢ
ａの一部をｐｂで置換したり、あるいはキュリー点を低
温側に移行させるために、Ｂａの一部をＳｒで置換した
り、Ｔｉの一部をＺｒ、Ｓｎ等で置換したりすることが
知られている。Therefore, in order to shift this Curie point to the high temperature side, B
Part of a can be replaced with PB, or in order to shift the Curie point to a lower temperature side, part of Ba can be replaced with Sr, or part of Ti can be replaced with Zr, Sn, etc. Are known.
さらに、キュリー点を越えた後の、温度による抵抗の変
化率（抵抗温度変化率）を増大させるために、チタン酸
バリウム系半導体磁器組成物にＭｎを所定の割合で添加
することが知られている。Furthermore, it is known that Mn is added at a predetermined ratio to barium titanate-based semiconductor ceramic compositions in order to increase the rate of change in resistance due to temperature (rate of change in resistance with temperature) after the Curie point has been exceeded. There is.
また、常温における比抵抗を小さく、かつ、安定にする
ために、チタン酸バリウム系半導体磁器組成物にＳ ｉ
０２を添加することが知られている。In addition, in order to make the specific resistance small and stable at room temperature, Si
It is known to add 02.
そして、こうしたチタン酸バリウム系半導体磁器組成物
の耐電圧特性を向上させるために、ＢａＴ ｉ Ｏｊの
Ｂａの−１部をＣａで、またはＣａ及びＳｒで置換し、
さらに、添加剤としてマンガン、シリカを添加含有させ
たチタン酸バリウム系半導体磁器組成物が提案されてい
る。しかし、このチタン酸バリウム系半導体磁器組成物
においては、Ｃａ Ｔ ｉ Ｏｓの割合が３モル％以上
、５ｒＴｉＯ１の割合が１モル％以上、Ｐ ｂ Ｔ ｉ
Ｏｓの割合が１モル％以上であることから、比抵抗を
１０Ω・Ｃ−以下にすると耐電圧（絶縁破壊電圧）を１
００Ｖ ／ ｒｍ以上とすることができないため、種々
の優れた特性を有しているにもがかわらず、その用途が
制約されるという間組点かある。In order to improve the withstand voltage characteristics of such a barium titanate-based semiconductor ceramic composition, -1 part of Ba in BaT i Oj is replaced with Ca or with Ca and Sr,
Furthermore, barium titanate-based semiconductor ceramic compositions containing manganese and silica as additives have been proposed. However, in this barium titanate-based semiconductor ceramic composition, the proportion of Ca TiOs is 3 mol % or more, the proportion of 5rTiO1 is 1 mol % or more, and the proportion of P b Ti
Since the proportion of Os is 1 mol% or more, if the specific resistance is reduced to 10Ω・C- or less, the withstand voltage (breakdown voltage) is reduced to 1
Although it has various excellent properties, its use is limited because it cannot exceed 00V/rm.
この発明は、上記問題点を解決するものであり、耐電圧
特性に優れ（１００■／Ｉｆｉ１以上）、がっ、比抵抗
の小さい（１０Ω・ＣＩ以下）チタン酸バリウム系半導
体磁器組成物を提供することを目的とする。The present invention solves the above-mentioned problems, and provides a barium titanate-based semiconductor ceramic composition with excellent withstand voltage characteristics (100 Ω/Ifi1 or more) and low specific resistance (10 Ω CI or less). The purpose is to
［課題を解決するための手段及び作用コ上記の目的を達
成するために、この発明のチタン酸バリウム系半導体磁
器組成物は、
チタン酸バリウム系の主成分に、マンガン、シリカ及び
半導体化剤を添加含有させたチタン酸バリウム系半導体
磁器組成物において、
前記主成分は、ＢａＴｉＯ３３≦ｒＴｉＯｓ、ＣａＴ
ｉ Ｏ，及びＰ ｂ Ｔ ｉ Ｏｓを：６５モル％≦Ｂ
ａ Ｔ ｉ Ｏｓ≦９５モル％１モル％≦５ｒＴｉＯ
ｊ≦２５モル％
２モル％＜ Ｃａ Ｔ ｉ Ｏｓ≦２５モル％０．０１
モ一ル％≦ｐｂ’ｒｉｏｌ＜ｔモル％の割合で含有して
なることを特徴とする。[Means and effects for solving the problem] In order to achieve the above object, the barium titanate-based semiconductor ceramic composition of the present invention includes manganese, silica, and a semiconducting agent in the barium titanate-based main components. In the barium titanate-based semiconductor ceramic composition containing additives, the main component is BaTiO33≦rTiOs, CaT
iO, and PbTiOs: 65 mol%≦B
a T i Os≦95 mol% 1 mol%≦5rTiO
j≦25 mol% 2 mol%< Ca T i Os ≦25 mol% 0.01
It is characterized in that it is contained in a proportion of mol %≦pb'riol<t mol %.
この発明のチタン酸バリウム系半導体磁器組成−物の主
成分は、ＢａＴｉＯｘ 、５ｒＴｉＯｉ、Ｃａ Ｔ ｉ
Ｏｓ及びＰ ｂ Ｔ ｉ Ｏｓを上記の割合で含有し
てなるものである。The main components of the barium titanate-based semiconductor ceramic composition of the present invention are BaTiOx, 5rTiOi, CaTi
It contains Os and P b Ti Os in the above ratio.
Ｐ ｂ Ｔｉ Ｏｓ 、 Ｓ ｒ Ｔ ｉ Ｏｓは単独
ではキュリー点をそれぞれ高温側、低温側に移行させる
ものであることが知られているが、Ｓ ｒ Ｔ ｉ Ｏ
３、ＣａＴｉ０．及びＰ ｂ Ｔ Ｉ Ｏｓを主成分の
一部としてＢ ａ Ｔ ｉ Ｏｓに含有させることによ
り、耐電圧値が向上するという効果がある。It is known that PbTiOs and SrTiOs, when used alone, shift the Curie point to the high temperature side and low temperature side, respectively, but SrTiOs
3. CaTi0. By including P b T I Os as a part of the main component in B a T i Os, there is an effect that the withstand voltage value is improved.
この発明のチタン酸バリウム系半導体磁器組成物におい
て、主成分中のＢ ａＴ ｉ Ｏｓの配合割合を６５〜
９５モル％としたのは、３３ ａ ７ ｉ ０ ｓが６
５モル％未満である場合には半導体化が困離で、かつ比
抵抗も大きくなり、また、９５モル％を越えると電気的
特性が著しく低下するからである。In the barium titanate-based semiconductor ceramic composition of the present invention, the blending ratio of BaTiOs in the main component is 65 to 65.
95 mol% is because 33 a 7 i 0 s is 6
If it is less than 5 mol%, it will be difficult to make it into a semiconductor and the resistivity will increase, and if it exceeds 95 mol%, the electrical characteristics will be significantly degraded.
また、５ｒＴｉＯｓの配合割合を１〜２５モル％とした
のは、Ｓ ｒ Ｔ ｉ Ｏｓが１モル％未満では、特性
改善の効果が少なく、また２５モル％を上回ると電気的
特性が劣化するからである。In addition, the blending ratio of 5rTiOs is set to 1 to 25 mol% because if SrTiOs is less than 1 mol%, the effect of improving the characteristics will be small, and if it exceeds 25 mol%, the electrical characteristics will deteriorate. It is.
さらに、Ｃａ Ｔ ｉ Ｏｓの配合割合を２モル％＜Ｃ
ａＴｉ０．≦２５モル％
としたのは、Ｃａ Ｔ ｉ Ｏｓが２モル％以下では、
特性改善の効果が認められず、また２５モル％を越える
と電気的特性が劣化するからである。Furthermore, the blending ratio of Ca TiOs was adjusted to 2 mol%<C
aTi0. The reason for setting ≦25 mol% is that when CaTiOs is 2 mol% or less,
This is because the effect of improving the characteristics is not recognized, and if the amount exceeds 25 mol %, the electrical characteristics deteriorate.
また、ｐｂ’ｒｔｏｓの配合割合を
０．０１モル％≦Ｐ ｂ Ｔ ｉ Ｏｓ ＜ １モル％
としたのは、Ｐ ｂ Ｔ ｉ Ｏｓが０．０１モル％未
満では、特性改善の効果が十分ではないが、０．０１モ
ル％以上であれば、上記的の主成分との関係において１
モル％未満でも所望の効果が得られるからである。In addition, the blending ratio of pb'rtos is 0.01 mol%≦PbTiOs<1 mol%.
The reason for this is that if P b T i Os is less than 0.01 mol %, the effect of improving properties is not sufficient, but if it is 0.01 mol % or more, 1
This is because the desired effect can be obtained even if the amount is less than mol%.
また、この発明のチタン酸バリウム系半導体磁器組成物
は半導体化のために、半導体化剤を添加しているが、こ
の半導体化剤としては、Ｙ、Ｌａ、Ｃｅなどの希土類元
素、Ｎｂ、Ｂｉ、Ｓｂ、Ｗ、Ｔｈなどの元素が例示され
る。そして、これらの元素のうち少なくとも１種を添加
するが、その添加量は、比抵抗を小さくする見地から０
．２〜１゜０モル％の範囲であることが望ましい。In addition, the barium titanate-based semiconductor ceramic composition of the present invention has a semiconductor-forming agent added thereto for semiconductorization, and the semiconductor-forming agent includes rare earth elements such as Y, La, and Ce, Nb, and Bi. , Sb, W, and Th. At least one of these elements is added, but the amount added is set to 0 from the viewpoint of reducing resistivity.
．． It is desirable that the content be in the range of 2 to 1.0 mol %.
さらに、添加剤としてマンガン（Ｍ ｎ ＣＯｓ等）を
微量添加するが、これは、マンガンを添加しＭｎＯ□と
して含有させることにより、キュリー点を越えた後の正
の抵抗温度特性において、抵抗温度変化率を増大させる
ためである。その添加量はＭｎとして０．０３〜０．１
０モル％の範囲であることが、常温における抵抗を過度
に高くすることなく必要な添加効果を得るなめに好まし
い。Furthermore, a small amount of manganese (MnCOs, etc.) is added as an additive, and by adding manganese and containing it as MnO This is to increase the rate. The amount added is 0.03 to 0.1 as Mn.
A range of 0 mol % is preferable in order to obtain the necessary addition effect without excessively increasing the resistance at room temperature.
さらに、半導体化剤の添加量のわずかな変動によって生
じる比抵抗の変化を抑制し、常温における低い比抵抗を
得るためにシリカ（ＳｉＯ□）を添加するが、その添加
量はＳｉＯ□として０．５〜５モル％の範囲であること
が好ましい。Furthermore, silica (SiO□) is added in order to suppress changes in resistivity caused by slight variations in the amount of the semiconductor agent added and to obtain a low resistivity at room temperature, but the amount of addition is 0.2% as SiO□. It is preferably in the range of 5 to 5 mol%.
［実施例］
以下に、この発明の実施例及び比較例を示して発明をさ
らに詳細に説明する。[Example] The invention will be explained in more detail below by showing examples and comparative examples of the invention.
主成分となるＢａＣＯ５３≦ｒＣＯｓ 、ＣａＣＯ５、
Ｐ ｂ ｓ ０４ 、Ｔ ｆ ０２ 、半導体化剤であ
るＹ２Ｏ１、添加剤であるＭｎｃＯｓ 、Ｓ ｉ０２を
、第１表に示す組成のチタン酸バリウム系半導体磁器組
成物が得られるような割合で配合し、湿式混合した。こ
れを脱水、乾煉し１１５０℃で２時間仮焼して仮焼原料
を得た。それから、得られた仮焼原料を粉砕し、さらに
バインダを加えて造粒し、成形圧力１０００ｋｇ／ａ＆
で成形して円板状の成形体を得た。そして、得られた成
形体を１３６０℃で１．５時間焼成し、直径１７．５閣
、厚さ０゜６ｍ＋の円板状の半導体磁器を得た。The main components are BaCO53≦rCOs, CaCO5,
P b s 04 , T f 02 , Y2O1 as a semiconducting agent, MncOs and Si02 as additives were mixed in such proportions that a barium titanate-based semiconductor ceramic composition having the composition shown in Table 1 was obtained. , wet mixed. This was dehydrated, dry-blended, and calcined at 1150°C for 2 hours to obtain a calcined raw material. Then, the obtained calcined raw material is crushed, a binder is added and granulated, and the molding pressure is 1000 kg/a &
A disc-shaped molded product was obtained by molding. Then, the obtained molded body was fired at 1360° C. for 1.5 hours to obtain a disk-shaped semiconductor porcelain having a diameter of 17.5 mm and a thickness of 0°6 m+.
工敷ヨ
比較のため、上記実施例で用いた各原料を用い、配合割
合を変えて、この発明のチタン酸バリウム系半導体磁器
組成物の範囲外の組成とし、その他は、上記実施例と同
様の手順、条件でチタン酸バリウム系半導体磁器を製造
しな。For comparison, each of the raw materials used in the above example was used, the blending ratio was changed to create a composition outside the range of the barium titanate semiconductor ceramic composition of the present invention, and the rest was the same as in the above example. Barium titanate-based semiconductor porcelain must be manufactured using the following procedures and conditions.
上記実施例及び比較例のチタン酸バリウム系半導体磁器
について、両主面にＩｎ−Ｇａ合金の電極を形成し、こ
れを試料として常温（２５℃）における比抵抗、耐電圧
特性を測定した。その結果を第１表に示す。In--Ga alloy electrodes were formed on both principal surfaces of the barium titanate-based semiconductor ceramics of the above Examples and Comparative Examples, and the resistivity and withstand voltage characteristics at room temperature (25° C.) were measured using these as samples. The results are shown in Table 1.
なお、第１表において試料番号に本印を付したものは比
較例の試料であり、その他は全てこの発明の実施例によ
る試料である。In Table 1, the sample numbers marked with a real mark are samples of comparative examples, and all others are samples according to examples of the present invention.
また、第１表の比抵抗及び耐電圧の値は、下記の方法に
より測定した値である。Moreover, the values of specific resistance and withstand voltage in Table 1 are values measured by the following method.
匿監且
試料の抵抗値をデジタルマルチメータを用いて測定する
。そして、得られた測定値から、式％式％（）
により比抵抗を求める。Monitor and measure the resistance of the sample using a digital multimeter. Then, from the obtained measured value, determine the specific resistance using the formula % formula % ().
但し、ρは比抵抗、Ｒは抵抗値、Ｓは表面積、しは厚み
である。However, ρ is specific resistance, R is resistance value, S is surface area, and shi is thickness.
肚ｌ旦
試料にＩＯＶの電圧を２分間印加した後その電流値を測
定する。それから、さらに５Ｖ高い電圧を１分間印加し
た後その電流値を測定する。上記のように前回より５■
高い電圧を印加する操作を繰り返し、測定した電流値が
、前回に測定した電流値よりも大きくなったときに、試
料は破壊点（ＴＮ点）に達したとして、−回前に印加し
た電圧を耐電圧とする。After applying a voltage of IOV to the sample for 2 minutes, the current value is measured. Then, a voltage higher by 5V is applied for 1 minute, and the current value is then measured. As mentioned above, 5■ more than last time
Repeat the operation of applying a high voltage, and when the measured current value becomes larger than the previously measured current value, it is assumed that the sample has reached the breakdown point (TN point), and the voltage applied - times before is applied. Withstand voltage.
［以 下 余 白］
第１表に示すように、比較例においては、比抵抗を低く
押えるように配合割合を調整したものは耐電圧が低く、
また、耐電圧を重視してこれを高めようとすると比抵抗
が大きくなるという特性上の問題点を包含していること
がわかる。[Margin below] As shown in Table 1, in the comparative examples, those in which the blending ratio was adjusted to keep the resistivity low had a low withstand voltage;
Furthermore, it can be seen that if an attempt is made to increase the withstand voltage with emphasis, there is a characteristic problem in that the specific resistance increases.
これに対して、この発明の範囲内のチタン酸バリウム系
半導体磁器組成物は、耐電圧が１００■／閣以上で、比
抵抗が１０Ω・ＣＩ以下と、耐電圧及び比抵抗の両方の
特性において優れていることがわかる。On the other hand, the barium titanate-based semiconductor ceramic composition within the scope of the present invention has a withstand voltage of 100 Ω/cm or more and a specific resistance of 10 Ω・CI or less, which is good in both the characteristics of withstand voltage and resistivity. It turns out that it is excellent.
［発明の効果］
この発明のチタン酸バリウム系半導体磁器組成物は、Ｂ
ａＴｉｏｓ 、５ｒＴｉｏ、、ＣａＴｔ。[Effect of the invention] The barium titanate-based semiconductor ceramic composition of this invention has B
aTios, 5rTio,, CaTt.
、、ＰｂＴｉＯｓを所定の割合で含有する主成分に、添
加剤と半導体化剤とを添加含有させたものであり、比抵
抗が小さく（１０Ω・ｃｍ以下）、かつ、耐電圧特性に
も優れており（１００Ｖ／ａ以上）、温度制御用素子、
電流制御用素子その他種々の用途に広く用いることがで
きる。,, The main component contains PbTiOs in a predetermined proportion, and additives and semiconducting agents are added to it, and it has a low resistivity (10 Ω cm or less) and excellent voltage resistance characteristics. cage (100V/a or more), temperature control element,
It can be widely used as a current control element and other various uses.
Claims (1)
カ及び半導体化剤を添加含有させたチタン酸バリウム系
半導体磁器組成物において、 前記主成分は、ＢａＴｉＯ＿３、ＳｒＴｉＯ＿３、Ｃａ
ＴｉＯ＿３及びＰｂＴｉＯ＿３を： ６５モル％≦ＢａＴｉＯ＿３≦９５モル％ １モル％≦ＳｒＴｉＯ＿３≦２５モル％ ２モル％＜ＣａＴｉＯ＿３≦２５モル％ ０．０１モル％≦ＰｂＴｉＯ＿３＜１モル％の割合で含
有してなることを特徴とするチタン酸バリウム系半導体
磁器組成物。(1) In a barium titanate-based semiconductor ceramic composition in which manganese, silica, and a semiconducting agent are added to a barium titanate-based main component, the main components include BaTiO_3, SrTiO_3, Ca
Contains TiO_3 and PbTiO_3 in the following proportions: 65 mol%≦BaTiO_3≦95 mol% 1 mol%≦SrTiO_3≦25 mol% 2 mol%<CaTiO_3≦25 mol% 0.01 mol%≦PbTiO_3<1 mol% A barium titanate-based semiconductor ceramic composition characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29664190A JP3273468B2 (en) | 1990-10-31 | 1990-10-31 | Barium titanate-based semiconductor porcelain composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29664190A JP3273468B2 (en) | 1990-10-31 | 1990-10-31 | Barium titanate-based semiconductor porcelain composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04170360A true JPH04170360A (en) | 1992-06-18 |
| JP3273468B2 JP3273468B2 (en) | 2002-04-08 |
Family
ID=17836168
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29664190A Expired - Lifetime JP3273468B2 (en) | 1990-10-31 | 1990-10-31 | Barium titanate-based semiconductor porcelain composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3273468B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5777541A (en) * | 1995-08-07 | 1998-07-07 | U.S. Philips Corporation | Multiple element PTC resistor |
-
1990
- 1990-10-31 JP JP29664190A patent/JP3273468B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5777541A (en) * | 1995-08-07 | 1998-07-07 | U.S. Philips Corporation | Multiple element PTC resistor |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3273468B2 (en) | 2002-04-08 |
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