TW417177B - Semiconductor device with silicide contact structure and method for producing the same - Google Patents
Semiconductor device with silicide contact structure and method for producing the same Download PDFInfo
- Publication number
- TW417177B TW417177B TW086116486A TW86116486A TW417177B TW 417177 B TW417177 B TW 417177B TW 086116486 A TW086116486 A TW 086116486A TW 86116486 A TW86116486 A TW 86116486A TW 417177 B TW417177 B TW 417177B
- Authority
- TW
- Taiwan
- Prior art keywords
- film
- titanium
- semiconductor device
- contact hole
- conductive film
- Prior art date
Links
- 229910021332 silicide Inorganic materials 0.000 title claims abstract description 24
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 title claims abstract description 24
- 239000004065 semiconductor Substances 0.000 title claims description 67
- 238000004519 manufacturing process Methods 0.000 title claims description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 84
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 84
- 239000010703 silicon Substances 0.000 claims abstract description 84
- 229910021341 titanium silicide Inorganic materials 0.000 claims abstract description 84
- 239000010936 titanium Substances 0.000 claims abstract description 81
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 78
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 78
- 239000000758 substrate Substances 0.000 claims abstract description 51
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 45
- 238000009792 diffusion process Methods 0.000 claims abstract description 37
- 238000000034 method Methods 0.000 claims description 21
- 230000002093 peripheral effect Effects 0.000 claims description 13
- 230000015572 biosynthetic process Effects 0.000 claims description 11
- 239000003990 capacitor Substances 0.000 claims description 9
- 238000009429 electrical wiring Methods 0.000 claims description 6
- 238000003860 storage Methods 0.000 claims description 6
- 230000002079 cooperative effect Effects 0.000 claims description 5
- UGACIEPFGXRWCH-UHFFFAOYSA-N [Si].[Ti] Chemical compound [Si].[Ti] UGACIEPFGXRWCH-UHFFFAOYSA-N 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 66
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 15
- 229910052814 silicon oxide Inorganic materials 0.000 description 13
- 238000010438 heat treatment Methods 0.000 description 11
- 230000008569 process Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- 239000012528 membrane Substances 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000011148 porous material Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 108090000765 processed proteins & peptides Proteins 0.000 description 2
- 239000004576 sand Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 235000013372 meat Nutrition 0.000 description 1
- 239000005360 phosphosilicate glass Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29652096A JP3679527B2 (ja) | 1996-11-08 | 1996-11-08 | 半導体装置およびその製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW417177B true TW417177B (en) | 2001-01-01 |
Family
ID=17834606
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW086116486A TW417177B (en) | 1996-11-08 | 1997-11-05 | Semiconductor device with silicide contact structure and method for producing the same |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP3679527B2 (ja) |
| KR (1) | KR100274852B1 (ja) |
| TW (1) | TW417177B (ja) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001284360A (ja) | 2000-03-31 | 2001-10-12 | Hitachi Ltd | 半導体装置 |
| KR100456577B1 (ko) * | 2002-01-10 | 2004-11-09 | 삼성전자주식회사 | 반도체 장치의 커패시터 및 그 제조 방법 |
| US9209175B2 (en) | 2013-07-17 | 2015-12-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | MOS devices having epitaxy regions with reduced facets |
| KR20220041860A (ko) | 2019-07-30 | 2022-04-01 | 주식회사 다이셀 | 단량체, 포토레지스트용 수지, 포토레지스트용 수지 조성물 및 패턴 형성 방법 |
-
1996
- 1996-11-08 JP JP29652096A patent/JP3679527B2/ja not_active Expired - Lifetime
-
1997
- 1997-11-05 TW TW086116486A patent/TW417177B/zh not_active IP Right Cessation
- 1997-11-07 KR KR1019970058777A patent/KR100274852B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR100274852B1 (ko) | 2001-02-01 |
| JP3679527B2 (ja) | 2005-08-03 |
| KR19980042202A (ko) | 1998-08-17 |
| JPH10144623A (ja) | 1998-05-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MK4A | Expiration of patent term of an invention patent |