TW413877B - Package body and semiconductor chip package using same - Google Patents

Package body and semiconductor chip package using same Download PDF

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Publication number
TW413877B
TW413877B TW86116757A TW86116757A TW413877B TW 413877 B TW413877 B TW 413877B TW 86116757 A TW86116757 A TW 86116757A TW 86116757 A TW86116757 A TW 86116757A TW 413877 B TW413877 B TW 413877B
Authority
TW
Taiwan
Prior art keywords
package
hole
patent application
scope
semiconductor chip
Prior art date
Application number
TW86116757A
Other languages
English (en)
Inventor
Chi-Jung Song
Original Assignee
Lg Semicon Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lg Semicon Co Ltd filed Critical Lg Semicon Co Ltd
Application granted granted Critical
Publication of TW413877B publication Critical patent/TW413877B/zh

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    • H—ELECTRICITY
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    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Wire Bonding (AREA)

Description

4138*77 A7 ______B7 五、發明説明（i ) 發明背景 發明領域 本發明係有關於半導體晶片封裝，而特別是有關於 將其使用於改良封裝體與半導體晶片封裝者’藉由排除基 材與金屬線之使用適合用以縮小其尺寸與厚度。 相關習知技藝之說明 考慮一般之半導體晶片封裝，常述及使用眾多焊球 以作為外部端子的球陣列（以下稱BGA)半導體晶片封裝， 因為其可在小區域中產生多銷件結構，是以此種BGA封 裝被廣风地應用’在傳統BGA封裝之外端子夠短，是以 可防止當電訊傳輸時的外界應力而變形彎屈。 而且’當將其裝設於主機板時’在融爐中封裝體瞬 時迴流可藉以縮短裝設時間。 經濟部中央標準局負工消費合作社印製 如第1圖所示，傳統之BGA封裝體包括：一基板1、 籍黏合劑2裝設於基板j中央表面之半導體封裝晶片3、形 成於晶片3上表面之眾多晶片墊3a、分別連接晶片墊3&於 基板1之金屬圖樣（未示出）之眾多金屬線4、在基板1上所 形成之用以覆蓋晶片3與金屬線4之模鑄化合物5，以及附 接於基板底表面之眾多焊球。 如此構成之傳統BGA封裝的製造方法包括的步驟 如· 一用以將半導體晶片3附接於基板1上表面的晶圓鍵接 步驟、—藉由對應之金屬線4而將基板1上金屬圖樣（未示 出）連接於才目對應晶片3上表面所形成的晶月墊3a之線鍵接 步驟Λ ~使用環氧樹脂以環封晶片3與金屬線4的模造化合 -4- 姆尺度逋财 413877 經濟部中央標準局員工消費合作社印製 Α7 Β7 五、發明説明（2 ) 物5之模造步驟、以及—用以聯接基板i下表面上眾多焊球 來完成BGA封裝之焊球連接步驟。 然而，如此構成之BGA封裝體有其封裝體積之限 制，因為金屬線4應有其固定迴圈高度。 再者，使用各別金屬線4來進行線鍵接步驟以將晶片 3上所形成之晶片墊3a聯接至基板j上金屬圖樣（未示出）是 困難且耗時的’是以限制生產力。 發明概述 因此，本發明之目的係欲提供不需使用基材與金屬 線的半導體晶片封裝來縮小其尺寸與厚度。. 本發明之另一目的係欲提供一可藉由排除需許多時 間之線鍵接步騍來改良半導體晶片封裝的生產力。 為達到上述之目的，所供設之半導體晶片封裝用之 封裝體具有眾多由第二孔洞下表面穿出而至封裝體下表面 的第一穿孔’以及由封裝體上表面邊緣部穿出至封裝體下 表面的第二穿孔。 再者’為達上述之目的，所供設之半導體晶片封裝 包括一封裝體，其具有在封裝體上表面所形成之第一孔洞 以及在第一孔洞上下表面所形成之第二孔洞，並具有取多 聯接第二孔洞底表面與封裝體下表面之金屬圖樣、一表面 上具有附接於其上的鍵接墊以及附接於鍵接墊上之眾多突 塊’其中，突塊聯接於相對應之金屬圖樣、一在第二孔洞 上所形成之填充劑，以及形成於第一孔洞上之環氧樹脂模 造化合物。 本紙張尺度適用中國國家標準（CNS > Λ4規格U〗0X297公釐） » n ^^^1 HI n (請先閲讀^面之、注意事項再填寫本頁) 摩 413877 A7 一——____ B7 五、發明説明（3 ) ' ~ 圖示簡要說明 參考所附圖式，本發明將更容易瞭解，其等僅用以 說明而非限制本發明之用，其中： 第1圖係傳統BGA封裴之截面圖； 第2圖係依本發明之半導體封裝體的截面圖； 第3圖係本發明半導體晶片封裝的截面圖； 第4A至4E圖為用以說明本發明半導體晶片封裴續 列步驟的製造圖；以及 第5圖係一流程圖，用以說明依本發明之半導體晶片 封裝製造步驟。 發明詳細說明 參考所附之圖式，以下將說明本發明之半導體晶片封 裝。 如說明本發明封裝體之截面視圖的第2圖，在封裝 體上表面形成一正方形第一孔洞i i，在第一孔洞丨丨之底部 形成一正方形第二孔洞12，在封裝體10之下方部形成眾多 訊號線13，以聯訊第二孔洞丨2與封裝體10之底表面。 經濟部中央標準局員工消費合作社印裝 所形成之第二孔洞12小於第一孔洞〖丨，設置於封裝 體10中之每一信號線13的端部曝露於第二孔洞12之底部與 封裝體10的底表面，在第一孔洞11上所餘之底表面上形成 一金屬板14，穿過第二孔洞12之底表面所形成之眾多第— 穿孔’以與封裝體10下表面聯訊，而且’幕多第二穿孔16 係垂直地自封裝體10周緣由上向下穿出。 第3圖說明本發明之完成半導體晶片封裝，一如其 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297^7 413877 經濟部中央標準局貝工消費合作社印製 A7 _B7五、發明説明（4 ) 中所示者，晶片封裝保括一裝設有眾多信號線13的封裝 體，以及裝設於封裝體10中之.半導體晶片20。 第4A至4E圖為用以說明本發明半導體晶片封裝續 列步驟的製造圖；以及第5圖係一用以說明依本發明之半 導體晶片封裝製造步驟的流程圖。 首先，參照第4 Α圓，在許半導體晶片20上所形成 之眾多鍵接塾3Q相對應處形成眾_多突塊4〇，此種突塊步驟 係在晶圓（未示出）上進行，在此，可獲得眾多半導體裝置 或晶片β ' 如第4Β圖所示者，突塊化半導體晶片2〇係藉由向 異性材料而裝設於信號線13上端，其曝露於封裝體10之第 二孔洞的底部。 如第4 C圖所示，藉由下填技術將低黏度之液態封 裝劑60形成於半導體晶片20底表面與第二孔洞的底面，為 此以將突塊40固定於第二孔洞12，在此，液.態封裝劑之 上表面與第一孔洞11底面等齊。 參照第4 D圖，將封裝體10之第一孔洞^充以環氧 模造化合物70,如此，經裝設半導體晶片2〇之上表面向外 曝露，在此，形成於第一孔洞U底面之金屬板14可用以增 加環氧模造化合物70與封裝體1〇間的黏合力，再者，所形 成之經裝設之半導體晶片20的上表面、封裝體10周緣上表 面與模造化合物70之上表面係共平面或等齊的。 如第4E圖所示’在封裝體10下表面所曝露之信號 線13的下緣對應處接有眾多焊球8〇，再者’眾多焊球係 本，.A張尺度適用中國國家標準（CNS〉A4規格（210X297公楚） (諳先閱讀背面's^再填寫本買} -叫'^.· .L--¢. — 訂 _ to- 413877 經濟部中央標準局員工消費合作社印裝 五、發明説明（ 供設於相對應之第一與第二穿孔15，16之下方入口處，藉 以可完成本發明之半導體封裝製造。 如上所述者，本發明之半導體晶片封裝藉由排除基 板與金屬線之使用而最小化其尺寸與厚度。 再者，可藉由本發明之半導體晶启封裝排除耗 焊線鍵接步驟，而改善生產力。 元件標號對照表 1 基板 3,20 晶片 4 金屬線 5 模造化合物 10 封裝體 11，12孔洞 13 信號線 14 金屬板 15，16孔洞 40 突塊 80,90 焊球 -8- 本紙張欠度適用中國國家標準（CNS ) A4規格（210X297公釐） (諳先閲讀背面之注拳項再填考本頁j -訂- t

Claims (1)

  1. 413877 驾 — ___ D8 '申請專利範圍 1. 一種半導體晶片封裝用之封裝體，其包括： 在該封裝體上表面中所形成之第一孔洞； 在第一孔洞底表面中所形成之第二孔洞；以及 用以連接第二孔洞至封裝體之下表面的眾多金屬圖樣。 2·如申請專利範圍第1項之封裝體，更包括： 眾多由第二孔洞底面穿透至封裝體下表面的第一 穿孔；以及 眾多由封裝體上表面邊緣部穿透至封裝體下表面 的第二穿孔。 3·如申請專利範圍第1項之封裝體，更包括： 在第一孔洞底表面邊緣部上所形成之金屬板。 4·如申請專利範圍第1項之封裝體，其中，該金屬圖樣 係顯露於第二孔洞之底表面與封裝體下表面處。 5.如申請專利範圍第4項之封裝體，更包括： 眾多附接於第二孔洞底表面處曝露之金屬圖樣上 的向異性-導體元件；以及 眾多附接於封裝體下表面處金屬圖樣的焊球。 6 如申請專利範圍第2項之封裝體，更包括： 眾多附接於穿過封裝體下表面之第一與第二穿孔 的焊球。 7 ·如申請專利範圍第1項之封裝體，其中，該第一孔洞 與第二孔洞為方型。 8.—種半導體晶片封裝，其包括： 一封裝體，其具有在封裝體頂表面中所形成之第 -9- 本紙張尺度適用中國國家樣準（CNS ) A4规格.（210x29*7公董) (請先閲讀背面之注意事項异填寫本瓦) 訂 經濟部智慧財產局員工消費合作钍印製 413877 ss C8 ' --------D3 : '申請專利範圍 一孔洞與在第一孔洞底表面中所形成之第二孔洞， 並具有眾多聯接第二孔洞之底表面與封裝體下表面 的金屬圖樣； 一半導體晶片，其具有其上所附接之眾多鍵接 墊，以及附接於該鍵接墊之眾多突塊，其中該突塊 係聯接至金屬圍樣之相對應處； 在第二孔洞中所形成的填充劑；以及 在一孔洞中所形成的環氧模造化合物。 9·如申請專利範圍第8項之半導體晶片封裝，其中， 金屬圓樣係曝露於第二孔洞底表面與封裝體底表 面處。 10. 如申請專利範圍第8項之半導體晶片封裝，更包括： 眾多附接於第二孔洞底表面處曝露之金屬圖樣上 的向異性導體元件；以及 眾多附接於封裝.體下表面處金屬圖樣的焊球。 11. 如申請專利範圍第8項之半導體晶月封裝，更包括： 在第一孔洞底表面之邊緣處所形成之金屬板。 12‘如申請專利範圍第8項之半導體晶片封裝，其中，封 裝體包括眾多由第二孔洞底面穿透至封裝體下表面的 第一穿孔：以及眾多由封裝體上表面邊緣部穿透至封 裝體下表面的第二穿孔。 13. 如申凊專利範圍第8項之半導體晶片封裝，更包括幕 多附接第一與第二穿孔至封裝體下表面的焊球。 14. 如申請專利範圍第8項之半導體晶片封裝，其中，所 -10- 本纸張尺度適用中國國家標準< CNS > A4規格（210X297公釐） •---------Λ/,— (請先閲讀背面之注意事項再填寫本頁) -s 經濟部智慧財產局員工消費合作社印製 AS B8 C8 D8 413877 申請專利範圍 裝設晶片的上表面係曝露在外。 15. 如申請專利範圍第14項之半導體晶片封裝，其中， 裝設晶片上表面、封裝體上表面的邊緣部以及: 造化合物之上表面係大致共平面的。 、 16. 如申請專利範圍第8項之半導體晶片封裝，其中，填 充劑之上表面係與第—孔洞之底表面大致共平面的。 17. 如申請專利範圍第8項之半導體晶片封裝’其中，第 一與第二孔洞係成方形的。 f請先閲讀背面之注意事項再填寫本買) 訂 線 經濟部智慧財產局員工消費合作社印製 -11· 本纸承尺度適用中國國家揉準（CNS ) A4規格（2丨0><297公着 + )
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KR100206893B1 (ko) * 1996-03-11 1999-07-01 구본준 반도체 패키지 및 그 제조방법

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JPH10261738A (ja) 1998-09-29
KR100234719B1 (ko) 1999-12-15
US6031284A (en) 2000-02-29
KR19980073411A (ko) 1998-11-05

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