TW398081B - Thin film transistor and fabrication method therefor - Google Patents

Thin film transistor and fabrication method therefor Download PDF

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Publication number
TW398081B
TW398081B TW087114208A TW87114208A TW398081B TW 398081 B TW398081 B TW 398081B TW 087114208 A TW087114208 A TW 087114208A TW 87114208 A TW87114208 A TW 87114208A TW 398081 B TW398081 B TW 398081B
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substrate
insulating film
active layer
forming
film transistor
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TW087114208A
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Gyoung-Seon Gil
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Lg Semicon Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28123—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects
    • H01L21/2815—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects part or whole of the electrode is a sidewall spacer or made by a similar technique, e.g. transformation under mask, plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
    • H01L29/78624—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile the source and the drain regions being asymmetrical
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78642—Vertical transistors

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)

Description

經浐部中央樣準而於工消費合竹妇卬？ 未 A7 __________ B7 五、發明説明（〗） ~ 發明背景 i發明領域 本發明係關於一種半導體裝置特別係關於薄膜電晶體 及其應用自行對正方法之製法。 2.習知技術之說明 習知薄膜電晶體中，當閘極電極接收高於閾電壓之電 壓時，及當汲極電極接收高於源極電壓之電壓時，電子的 源極區之大部份載子經由成形於多晶矽層之通道區遷移至 及極區’如此使驅動電流流動。但當經由施加電壓至閘極 電極形成通道區時’由於多晶矽層内侧之晶粒邊界形成之 可能障體，使大部份載子之活動力降低，如此驅動電流於 開狀態降低。 如此於汲極區一側於通道區提供低電阻偏壓區俾減少 漏電流。習知薄膜電晶體之製法現在參照附圖說明。 如第1A圖所示，多晶矽層藉化學蒸氣沈積cvD沈積 於絕緣基材1上，及藉光蝕刻法製作圖樣，應用多晶矽層 作為閘極光閘，如此形成閘極電極2。 如第1B圖所示，閘择絕緣膜3係經由沈積辱緣材料於 絕緣層1之包括閘極電極2之表面上形成，及活性層4藉 CVD沈積其上。 光阻施用於活性層4上及藉光银刻法製造圖樣，如此 形成光阻圖樣5如第1C圖所示。處光阻圖樣5界定活性 層4之通道及偏壓區。 如第1C至1D圖所示，雜質區以及讣係經由進行離子 本紙張尺度適用中國國家標隼（CNS ) A4規格（210X297公着） -----φ-- (請先閱讀背面之注•意事項再填寫本頁) I訂--- S------- 4 五、發明説明（ A7 B7 經"部中央"率^Ά Η消货合作扭印製 植入形成，施加卩絲型雜質至對外暴露之活性層4因而完 成習知薄膜電晶體之製作。 雜質區6a及6b分別界定MQS電晶體之源極⑷及汲極 ⑷。第m圖中a，b，_分別植入源極，通道區，偏壓 區及沒極區。 仁V知方法之光罩製程其界定各通道及偏壓區長度， 改變偏壓電流，线模改變與對正程度有_偏壓電流因 而降低半導體裝置之可信度及再現性。 發明概述 如此本發明之目的係提供一種經由提供自行對正過程 而可穩定化與對正程度有關之偏壓電流之薄膜電晶體及其 製法，如此改進半導體裝置性質。 為了達成前述目的，提供一種薄膜電晶體其包括··一 步進基材設置一侧壁介於其上部與下部間；一活性層成形 於基材上；一閘極絕緣膜於活性層上；—閘極電極成形於 閘極絕緣膜上對應於基材側壁上部；一絕緣膜成形於間極 絕緣膜之介於閘極電極與基材下部間之部份；及雜質區成 形於活性層，對應於基材上部及下部。 .* 此外為了達成前述目的’提供一種製造薄膜電晶體之 方法，其包括下列步驟：蝕刻及製作圖樣俾形成一侧壁介 於其上部與下部間；形成一活性層於基材上；形成一閘極 絕緣膜於活性層上；形成一絕緣膜於側壁第一區上及基材 下部上，及形成一閘極電極於側壁第二區上及於絕緣膜上 ;及形成雜質區於活性層對應於基材之上部及下部。 本紙張尺度適用中國國家標準（CNS ) A4現格（210X297公釐〉 •I (諳先閱讀背面之注.意事項再^寫本頁) -I I- 1 --訂--- _______I____ 經*部中央榀準而、，;';工消贽合作扣印^ A7 I---------------... __ B7 五、發明説明（3 ) .. 纟發明之其他優點、目的及特點由後文說明將顯然易 明。 圖式之簡單說明 由後文之詳細說明及附圖將更明瞭本發明，其僅供舉 例說明之用而非限制本發明，附圖中： 第1A-1D圖為垂直剖面圖循序示例說明習知薄膜電晶 體之製法； 第2圖為根據本發明之薄膜電晶體之垂直剖面圖；及 第3A-3H圖為垂直循序示例說明根據本發明之薄膜電 晶體之製法。 發明之詳細說明 現在參照附圖說明根據本發明之薄膜電晶體及其製法 〇 第2圖為根據本發明之薄膜電晶體之垂直剖面圖。如 圖所不，基材10具有一階咸形於上表面，如此提供上及下 4 11、12及介於其間之側壁丨3。活性層2〇遍形於上及下部 » .、. - 11、12及側壁13。閘極絕緣膜30成形於活性層2〇對應於下 部12之部分及活性層2〇對應於側壁13之部分。閘極電極42 成形於閘極絕緣膜30對應於側壁13上部，及絕緣_41戒形 於閘極絕緣膜30之對應於基材10下部12之部分及成形於閘 極絕緣臈30之對應於基材1 〇側壁13下部之部分。活性層20 對外暴露基材1〇之上及下部u、12之部分分別形成雜質區 。此外’額外絕緣膜（未顯示）成形於上及下部丨i、12及 側壁13。 本紙張尺度適财剩家縣（CNS ) A4規格_(_ 210X297公釐) (請先閱讀背面之注*'事項再填寫本頁) ΦΙ. -訂 經步，部中央樣率而κχ工消贽合作积印掣 A7 ~~-— ___________ B7 五 '發明説明（4 ~ ~~~~~ 基材10可由絕緣材料或設置於半導體材料上之絕緣膜 製成。活性層20為+導體膜，絕緣膜41係由旋塗玻璃（s〇g )製成。又活性層20設置通道區（1))及偏位區(幻分別對應 於閘極電極42及絕緣膜41。 第3 A-3H圖為垂直剖面圖循序示例說明根據本發明之 薄膜電晶體之製法。 第3A圖中基材10經蝕刻及製作圖樣，因此有侧壁13 叹置於上及下部11、12間。此處基材1 〇係由絕材料或設置 於半導體材料上之絕緣膜製成，及額外絕緣膜（未顯示） 成形基材10之上及下部11、12及侧壁13。 第3B圖中，活性層20藉CVD沈積於前述基材1〇上， 閘極絕緣膜30成形於活性層2〇上。此處活性層2〇係由半導 體膜製成’及閘極絕緣膜3〇係由氧化活性層2〇或藉CVD 製成。 由SOG製成之絕緣膜4：[沈積於包括閘極絕緣膜3〇之所 得結構體上，如第3C圖所示。 如第3D圖所示，於反向蝕刻製程後，部份絕緣膜41 保留於成形於基材1〇下部12之被成形為基材1〇侧壁13下部 之閘極絕緣膜30上。 第3E圖中，閘極電極導電蜞42沈積於所得包括閘極 絕緣膜30之絕緣膜4 ]之結構體10上。此處攙雜多晶矽應用 作為閘極電極導電膜42材料，基材10對應於絕緣臈41之侧 壁13下部定義作為第一區，及基材10對應於閘極電極導電 膜42之側壁13上部定義作為第二區。 本紙張尺度通用中國國家標準（CNS ) M規格（2丨〇><297公瘦） 7 聲-----1T------暮- (請先閱讀背面'之注奮事項再填寫本頁) A7 ________________B7 五、發明説明（5 ) 第3F圖中，各向異性蝕刻製程應用於閘極電極導電 、膜42 I如典形成開極電極42，及導電側壁成形至閘極絕緣 膜3 0對應於基材1 〇側壁13上部。 如第3G圖所示，絕緣膜41係利用閘極電極42作為蝕 刻光罩。 第3H圖中，經由使用閘極電極42及絕緣膜41作為光 罩，進行施加砷，磷等離子植入活性層2〇對應於基材1〇上 及下部11、12之部分，如此界sNM〇s電晶體之源極及汲 極雜質區；或進行施加硼，三氟化硼等離子植入其中，如 此界定PMOS電晶體之源極及汲極雜質區。經―由使用前述 支涂可製造根據本發明之薄膜電晶體。此處第3H圖，a， b ’ c及d分別指示源極’通道區，偏壓區及汲極。 如前述’根據本發明之薄膜電晶體中，雜質區係藉自 行對正製程形成，各通道區及偏壓區長度係根據閘極電極 及絕緣膜之個別厚度決定，如此控制偏壓電流更為穩定並 可改進半導體裝置之可信度及再現性。 雖然已經揭示本發明之較佳具體例供示例說明目的， 業界人士瞭解可未背離如隨附之申請專利範圍弓.丨述之本發 明之範圍及精髓做出多種修改、添加及取代。 本紙張尺度適用中國國家標準（CNS } A4規格（210X297公釐） A7 B7五、發明説明（6 ) 元件標號對照 1 絕緣基材 2 閘極電極 3 閘極絕緣膜 4 活性層 5 光阻圖樣 6a ，6b 雜質區 10 基材 11 上部 12 下部 13 侧壁 20 活性層 30 閘極絕緣膜 41 絕緣膜 42 閘極電極 經於部中决私率而「';'Η消贽合作狃印絮 (請先閱讀背面之注，意事項再填寫本頁)
本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ297公釐） 9

Claims (1)

  1. 經濟部中央標準局員Η消費合作社印褽 I公告h申範圍 L 一種薄膜電晶體，其包含： —步進基材設置—側壁介於其上部與下部間； 一活性層成形於基材上； 一閘極絕緣膜於活性層上； 上部·閑極電極成形於閘極絕緣声上對應於基材侧壁 —絕«成料祕概狀纽祕電 材下部間之部份；及 、 雜質區成形於活性層.，對應於基材上部及下部。 2·如申請專利範圍第！項之薄膜電晶體，其中該步進基材 係由絕緣材料製成。 如申凊專利範圍第〗項之薄膜電晶體 成形於基材之上及下部及側壁上。 4. 如申請專利範圍第丨項之薄膜電晶體 半導體膜。 5. 如申請專利範圍第丨項之薄膜電晶體 SOG (旋塗於玻璃）。 6·如申請專利範圍第1項之薄膜電晶體 於閘極電極部份為通道區及對應於絕緣膜部份為偏 區。 7· 一種製造薄膜電晶體之方法，其包含下列步驟： 姓刻及製作圖樣俾形成一侧壁介於其上部與下部間； 形成一活性層於基材上； f 其中該絕緣膜係 其中該活性層為 其中該絕緣膜為 其中活，性層對應 壓 訂 本紙張尺度逋用中國國家標準（CNS ) A4規格（210X297公釐） 10 申請專利範圍 A8 B8 C8 D8 形成-閘極絕緣膜於活性層上； 形成絕緣膜於側壁第一區上及基材下部上，及 形成:閘極電極於側壁第二區上及於絕緣膜上；及 形成雜質區於活性層對應於基材之上部及下部。 8.如申請專利範圍第7項之方法，其中該基材為絕緣材料 經濟部中央標準局員工消費合作社印製 9·如申請專利範圍第7項之方法 基材之上及下部及側壁。 10. 如申請專利範圍第7項之方法 膜。 11. 如申請專利範圍第7項之方法 懸塗於玻璃）。 12·如申請專利範圍第7項之 V成 八 f 咕/σ Ί工/w q "思Z 極電極4伤為通道區及對應於絕緣膜部份為偏壓區 13. 如申請專利輯圍第7項之方法，其中該形成閘極電極及 絕緣膜之步驟又包含下列次步驟： 形成絕緣膜於基材下部； 形成導電膜於基材上部及侧壁及絕緣膜上； 經由應用各向異性蝕刻法至導電膜而形成導電 壁於基材側壁上；及 經由使料電側壁作為_鮮而㈣絕緣膜t 14. 如申請專利範圍第13項之方法，其中該導電膜為多 石夕層。 其中該絕緣膜係成形於 其中該活性層為半導體 其中該絕緣膜為SOG ( 其中該活性層對應於閘 側 晶 (請先閎讀背面之：以意事項界填寫本育)
    UmJLAitM ( CnI7a4^#- ( 210X29^17
TW087114208A 1997-12-17 1998-08-27 Thin film transistor and fabrication method therefor TW398081B (en)

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US5243219A (en) * 1990-07-05 1993-09-07 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having impurity diffusion region formed in substrate beneath interlayer contact hole
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