TW378273B - Presintering of semiconductor transistor for microwave frequency band, presintering device and presintered semiconductor device - Google Patents
Presintering of semiconductor transistor for microwave frequency band, presintering device and presintered semiconductor device Download PDFInfo
- Publication number
- TW378273B TW378273B TW087116332A TW87116332A TW378273B TW 378273 B TW378273 B TW 378273B TW 087116332 A TW087116332 A TW 087116332A TW 87116332 A TW87116332 A TW 87116332A TW 378273 B TW378273 B TW 378273B
- Authority
- TW
- Taiwan
- Prior art keywords
- frequency
- aforementioned
- burn
- semiconductor transistor
- burning
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 104
- 238000000034 method Methods 0.000 claims abstract description 95
- 239000012535 impurity Substances 0.000 claims abstract description 21
- 230000004044 response Effects 0.000 claims abstract description 19
- 230000008569 process Effects 0.000 claims description 60
- 239000003990 capacitor Substances 0.000 claims description 19
- 230000001939 inductive effect Effects 0.000 claims description 18
- 230000002079 cooperative effect Effects 0.000 claims description 14
- 239000013078 crystal Substances 0.000 claims description 7
- 230000009471 action Effects 0.000 claims description 4
- 238000013021 overheating Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 description 34
- 230000005669 field effect Effects 0.000 description 31
- 230000005684 electric field Effects 0.000 description 16
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 12
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 12
- 238000001354 calcination Methods 0.000 description 10
- 230000008859 change Effects 0.000 description 8
- 239000000523 sample Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 230000010355 oscillation Effects 0.000 description 5
- 230000003071 parasitic effect Effects 0.000 description 5
- 230000005611 electricity Effects 0.000 description 4
- 230000001052 transient effect Effects 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- VEGOPIRPQIZFRD-UVHWXNHCSA-N [(2s,3r,4r,5r,6s)-3,4,5-trihydroxy-6-methyloxan-2-yl] (e)-3-(4-hydroxyphenyl)prop-2-enoate Chemical compound O[C@@H]1[C@H](O)[C@@H](O)[C@H](C)O[C@H]1OC(=O)\C=C\C1=CC=C(O)C=C1 VEGOPIRPQIZFRD-UVHWXNHCSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000008029 eradication Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000010117 shenhua Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2642—Testing semiconductor operation lifetime or reliability, e.g. by accelerated life tests
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/282—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
- G01R31/2822—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere of microwave or radiofrequency circuits
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Junction Field-Effect Transistors (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Amplifiers (AREA)
- Semiconductor Integrated Circuits (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10104405A JPH11295383A (ja) | 1998-04-15 | 1998-04-15 | マイクロ波帯域用半導体トランジスタのバーンイン方法、バーンイン装置及びバーンインした半導体装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW378273B true TW378273B (en) | 2000-01-01 |
Family
ID=14379815
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW087116332A TW378273B (en) | 1998-04-15 | 1998-10-01 | Presintering of semiconductor transistor for microwave frequency band, presintering device and presintered semiconductor device |
Country Status (4)
| Country | Link |
|---|---|
| US (3) | US6197602B1 (enExample) |
| JP (1) | JPH11295383A (enExample) |
| KR (1) | KR19990081769A (enExample) |
| TW (1) | TW378273B (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6534855B1 (en) * | 1997-08-22 | 2003-03-18 | Micron Technology, Inc. | Wireless communications system and method of making |
| US8650320B1 (en) * | 1998-03-23 | 2014-02-11 | Software Ag | Integration server supporting multiple receiving channels |
| AU2003248911A1 (en) * | 2002-07-08 | 2004-01-23 | Vuemedia, Inc. | Targeted marketing system |
| US20050004164A1 (en) * | 2003-04-30 | 2005-01-06 | Caggiano Thomas J. | 2-Cyanopropanoic acid amide and ester derivatives and methods of their use |
| JP4336953B2 (ja) * | 2003-07-15 | 2009-09-30 | 富士フイルム株式会社 | カードリーダ |
| CN101493493B (zh) * | 2008-01-24 | 2011-08-31 | 京元电子股份有限公司 | 半导体元件的预烧装置及其预烧方法 |
| JP5303966B2 (ja) * | 2008-03-04 | 2013-10-02 | 日本電気株式会社 | ロードプル測定治具 |
| JP6299117B2 (ja) * | 2013-08-30 | 2018-03-28 | 三菱電機株式会社 | 窒化物半導体デバイスの製造方法、バーンイン装置 |
| JP6303398B2 (ja) * | 2013-10-25 | 2018-04-04 | 三菱電機株式会社 | 半導体素子の通電装置 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4303455A (en) * | 1980-03-14 | 1981-12-01 | Rockwell International Corporation | Low temperature microwave annealing of semiconductor devices |
| JPS58177469A (ja) * | 1982-04-09 | 1983-10-18 | Fujitsu Ltd | 半導体基板の加熱方法及び加熱装置 |
| JPS6033066A (ja) | 1983-08-04 | 1985-02-20 | Fujitsu Ltd | 高周波トランジスタのバ−ンイン方法 |
| JPH0583017A (ja) | 1991-09-24 | 1993-04-02 | Mitsubishi Electric Corp | マイクロ波集積回路装置 |
| US5233161A (en) * | 1991-10-31 | 1993-08-03 | Hughes Aircraft Company | Method for self regulating CMOS digital microcircuit burn-in without ovens |
| US5519193A (en) | 1992-10-27 | 1996-05-21 | International Business Machines Corporation | Method and apparatus for stressing, burning in and reducing leakage current of electronic devices using microwave radiation |
| US5878486A (en) * | 1993-11-16 | 1999-03-09 | Formfactor, Inc. | Method of burning-in semiconductor devices |
| US6078035A (en) * | 1995-12-22 | 2000-06-20 | Lucent Technologies Inc. | Integrated circuit processing utilizing microwave radiation |
| JP3727103B2 (ja) * | 1996-04-05 | 2005-12-14 | 三菱電機株式会社 | 半導体素子の試験方法 |
-
1998
- 1998-04-15 JP JP10104405A patent/JPH11295383A/ja active Pending
- 1998-09-04 US US09/148,793 patent/US6197602B1/en not_active Expired - Fee Related
- 1998-10-01 TW TW087116332A patent/TW378273B/zh active
- 1998-10-16 KR KR1019980043268A patent/KR19990081769A/ko not_active Ceased
-
2000
- 2000-12-14 US US09/735,655 patent/US6278097B2/en not_active Expired - Fee Related
-
2001
- 2001-06-29 US US09/893,463 patent/US6507076B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US6197602B1 (en) | 2001-03-06 |
| JPH11295383A (ja) | 1999-10-29 |
| US20010052622A1 (en) | 2001-12-20 |
| US20010001291A1 (en) | 2001-05-17 |
| US6507076B2 (en) | 2003-01-14 |
| KR19990081769A (ko) | 1999-11-15 |
| US6278097B2 (en) | 2001-08-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent |