KR19990081769A - 마이크로파대역용 반도체 트랜지스터의 번인방법, 번인장치 및번인한 반도체장치g - Google Patents

마이크로파대역용 반도체 트랜지스터의 번인방법, 번인장치 및번인한 반도체장치g Download PDF

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Publication number
KR19990081769A
KR19990081769A KR1019980043268A KR19980043268A KR19990081769A KR 19990081769 A KR19990081769 A KR 19990081769A KR 1019980043268 A KR1019980043268 A KR 1019980043268A KR 19980043268 A KR19980043268 A KR 19980043268A KR 19990081769 A KR19990081769 A KR 19990081769A
Authority
KR
South Korea
Prior art keywords
burn
frequency
semiconductor transistor
load
ghz
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1019980043268A
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English (en)
Korean (ko)
Inventor
아키라 이노우에
Original Assignee
다니구찌 이찌로오, 기타오카 다카시
미쓰비시덴키 가부시키가이샤
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Application filed by 다니구찌 이찌로오, 기타오카 다카시, 미쓰비시덴키 가부시키가이샤 filed Critical 다니구찌 이찌로오, 기타오카 다카시
Publication of KR19990081769A publication Critical patent/KR19990081769A/ko
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2642—Testing semiconductor operation lifetime or reliability, e.g. by accelerated life tests
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/282—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
    • G01R31/2822—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere of microwave or radiofrequency circuits

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Amplifiers (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
KR1019980043268A 1998-04-15 1998-10-16 마이크로파대역용 반도체 트랜지스터의 번인방법, 번인장치 및번인한 반도체장치g Ceased KR19990081769A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP98-104405 1998-04-15
JP10104405A JPH11295383A (ja) 1998-04-15 1998-04-15 マイクロ波帯域用半導体トランジスタのバーンイン方法、バーンイン装置及びバーンインした半導体装置

Publications (1)

Publication Number Publication Date
KR19990081769A true KR19990081769A (ko) 1999-11-15

Family

ID=14379815

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019980043268A Ceased KR19990081769A (ko) 1998-04-15 1998-10-16 마이크로파대역용 반도체 트랜지스터의 번인방법, 번인장치 및번인한 반도체장치g

Country Status (4)

Country Link
US (3) US6197602B1 (enExample)
JP (1) JPH11295383A (enExample)
KR (1) KR19990081769A (enExample)
TW (1) TW378273B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6534855B1 (en) * 1997-08-22 2003-03-18 Micron Technology, Inc. Wireless communications system and method of making
US8650320B1 (en) * 1998-03-23 2014-02-11 Software Ag Integration server supporting multiple receiving channels
AU2003248911A1 (en) * 2002-07-08 2004-01-23 Vuemedia, Inc. Targeted marketing system
US20050004164A1 (en) * 2003-04-30 2005-01-06 Caggiano Thomas J. 2-Cyanopropanoic acid amide and ester derivatives and methods of their use
JP4336953B2 (ja) * 2003-07-15 2009-09-30 富士フイルム株式会社 カードリーダ
CN101493493B (zh) * 2008-01-24 2011-08-31 京元电子股份有限公司 半导体元件的预烧装置及其预烧方法
JP5303966B2 (ja) * 2008-03-04 2013-10-02 日本電気株式会社 ロードプル測定治具
JP6299117B2 (ja) * 2013-08-30 2018-03-28 三菱電機株式会社 窒化物半導体デバイスの製造方法、バーンイン装置
JP6303398B2 (ja) * 2013-10-25 2018-04-04 三菱電機株式会社 半導体素子の通電装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4303455A (en) * 1980-03-14 1981-12-01 Rockwell International Corporation Low temperature microwave annealing of semiconductor devices
JPS58177469A (ja) * 1982-04-09 1983-10-18 Fujitsu Ltd 半導体基板の加熱方法及び加熱装置
JPS6033066A (ja) 1983-08-04 1985-02-20 Fujitsu Ltd 高周波トランジスタのバ−ンイン方法
JPH0583017A (ja) 1991-09-24 1993-04-02 Mitsubishi Electric Corp マイクロ波集積回路装置
US5233161A (en) * 1991-10-31 1993-08-03 Hughes Aircraft Company Method for self regulating CMOS digital microcircuit burn-in without ovens
US5519193A (en) 1992-10-27 1996-05-21 International Business Machines Corporation Method and apparatus for stressing, burning in and reducing leakage current of electronic devices using microwave radiation
US5878486A (en) * 1993-11-16 1999-03-09 Formfactor, Inc. Method of burning-in semiconductor devices
US6078035A (en) * 1995-12-22 2000-06-20 Lucent Technologies Inc. Integrated circuit processing utilizing microwave radiation
JP3727103B2 (ja) * 1996-04-05 2005-12-14 三菱電機株式会社 半導体素子の試験方法

Also Published As

Publication number Publication date
US6197602B1 (en) 2001-03-06
JPH11295383A (ja) 1999-10-29
US20010052622A1 (en) 2001-12-20
US20010001291A1 (en) 2001-05-17
US6507076B2 (en) 2003-01-14
TW378273B (en) 2000-01-01
US6278097B2 (en) 2001-08-21

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