JPH11295383A - マイクロ波帯域用半導体トランジスタのバーンイン方法、バーンイン装置及びバーンインした半導体装置 - Google Patents

マイクロ波帯域用半導体トランジスタのバーンイン方法、バーンイン装置及びバーンインした半導体装置

Info

Publication number
JPH11295383A
JPH11295383A JP10104405A JP10440598A JPH11295383A JP H11295383 A JPH11295383 A JP H11295383A JP 10104405 A JP10104405 A JP 10104405A JP 10440598 A JP10440598 A JP 10440598A JP H11295383 A JPH11295383 A JP H11295383A
Authority
JP
Japan
Prior art keywords
burn
frequency
semiconductor transistor
resistor
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10104405A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11295383A5 (enExample
Inventor
Akira Inoue
晃 井上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP10104405A priority Critical patent/JPH11295383A/ja
Priority to US09/148,793 priority patent/US6197602B1/en
Priority to TW087116332A priority patent/TW378273B/zh
Priority to KR1019980043268A priority patent/KR19990081769A/ko
Publication of JPH11295383A publication Critical patent/JPH11295383A/ja
Priority to US09/735,655 priority patent/US6278097B2/en
Priority to US09/893,463 priority patent/US6507076B2/en
Publication of JPH11295383A5 publication Critical patent/JPH11295383A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2642—Testing semiconductor operation lifetime or reliability, e.g. by accelerated life tests
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/282—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
    • G01R31/2822—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere of microwave or radiofrequency circuits

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Amplifiers (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP10104405A 1998-04-15 1998-04-15 マイクロ波帯域用半導体トランジスタのバーンイン方法、バーンイン装置及びバーンインした半導体装置 Pending JPH11295383A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP10104405A JPH11295383A (ja) 1998-04-15 1998-04-15 マイクロ波帯域用半導体トランジスタのバーンイン方法、バーンイン装置及びバーンインした半導体装置
US09/148,793 US6197602B1 (en) 1998-04-15 1998-09-04 Burn-in method for microwave semiconductor transistor
TW087116332A TW378273B (en) 1998-04-15 1998-10-01 Presintering of semiconductor transistor for microwave frequency band, presintering device and presintered semiconductor device
KR1019980043268A KR19990081769A (ko) 1998-04-15 1998-10-16 마이크로파대역용 반도체 트랜지스터의 번인방법, 번인장치 및번인한 반도체장치g
US09/735,655 US6278097B2 (en) 1998-04-15 2000-12-14 Burn-in apparatus for burning-in microwave transistors
US09/893,463 US6507076B2 (en) 1998-04-15 2001-06-29 Microwave transistor subjected to burn-in testing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10104405A JPH11295383A (ja) 1998-04-15 1998-04-15 マイクロ波帯域用半導体トランジスタのバーンイン方法、バーンイン装置及びバーンインした半導体装置

Publications (2)

Publication Number Publication Date
JPH11295383A true JPH11295383A (ja) 1999-10-29
JPH11295383A5 JPH11295383A5 (enExample) 2004-11-25

Family

ID=14379815

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10104405A Pending JPH11295383A (ja) 1998-04-15 1998-04-15 マイクロ波帯域用半導体トランジスタのバーンイン方法、バーンイン装置及びバーンインした半導体装置

Country Status (4)

Country Link
US (3) US6197602B1 (enExample)
JP (1) JPH11295383A (enExample)
KR (1) KR19990081769A (enExample)
TW (1) TW378273B (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009210393A (ja) * 2008-03-04 2009-09-17 Nec Corp ロードプル測定治具
JP2015049080A (ja) * 2013-08-30 2015-03-16 三菱電機株式会社 窒化物半導体デバイスの製造方法、バーンイン装置
JP2015084493A (ja) * 2013-10-25 2015-04-30 三菱電機株式会社 半導体素子の通電装置

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6534855B1 (en) * 1997-08-22 2003-03-18 Micron Technology, Inc. Wireless communications system and method of making
US8650320B1 (en) * 1998-03-23 2014-02-11 Software Ag Integration server supporting multiple receiving channels
AU2003248911A1 (en) * 2002-07-08 2004-01-23 Vuemedia, Inc. Targeted marketing system
US20050004164A1 (en) * 2003-04-30 2005-01-06 Caggiano Thomas J. 2-Cyanopropanoic acid amide and ester derivatives and methods of their use
JP4336953B2 (ja) * 2003-07-15 2009-09-30 富士フイルム株式会社 カードリーダ
CN101493493B (zh) * 2008-01-24 2011-08-31 京元电子股份有限公司 半导体元件的预烧装置及其预烧方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4303455A (en) * 1980-03-14 1981-12-01 Rockwell International Corporation Low temperature microwave annealing of semiconductor devices
JPS58177469A (ja) * 1982-04-09 1983-10-18 Fujitsu Ltd 半導体基板の加熱方法及び加熱装置
JPS6033066A (ja) 1983-08-04 1985-02-20 Fujitsu Ltd 高周波トランジスタのバ−ンイン方法
JPH0583017A (ja) 1991-09-24 1993-04-02 Mitsubishi Electric Corp マイクロ波集積回路装置
US5233161A (en) * 1991-10-31 1993-08-03 Hughes Aircraft Company Method for self regulating CMOS digital microcircuit burn-in without ovens
US5519193A (en) 1992-10-27 1996-05-21 International Business Machines Corporation Method and apparatus for stressing, burning in and reducing leakage current of electronic devices using microwave radiation
US5878486A (en) * 1993-11-16 1999-03-09 Formfactor, Inc. Method of burning-in semiconductor devices
US6078035A (en) * 1995-12-22 2000-06-20 Lucent Technologies Inc. Integrated circuit processing utilizing microwave radiation
JP3727103B2 (ja) * 1996-04-05 2005-12-14 三菱電機株式会社 半導体素子の試験方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009210393A (ja) * 2008-03-04 2009-09-17 Nec Corp ロードプル測定治具
JP2015049080A (ja) * 2013-08-30 2015-03-16 三菱電機株式会社 窒化物半導体デバイスの製造方法、バーンイン装置
JP2015084493A (ja) * 2013-10-25 2015-04-30 三菱電機株式会社 半導体素子の通電装置

Also Published As

Publication number Publication date
US6197602B1 (en) 2001-03-06
US20010052622A1 (en) 2001-12-20
US20010001291A1 (en) 2001-05-17
US6507076B2 (en) 2003-01-14
KR19990081769A (ko) 1999-11-15
TW378273B (en) 2000-01-01
US6278097B2 (en) 2001-08-21

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