TW373112B - Active matrix substrate and method of correcting method of structural defect thereof - Google Patents
Active matrix substrate and method of correcting method of structural defect thereofInfo
- Publication number
- TW373112B TW373112B TW086104939A TW86104939A TW373112B TW 373112 B TW373112 B TW 373112B TW 086104939 A TW086104939 A TW 086104939A TW 86104939 A TW86104939 A TW 86104939A TW 373112 B TW373112 B TW 373112B
- Authority
- TW
- Taiwan
- Prior art keywords
- active matrix
- matrix substrate
- correcting
- structural defect
- tft
- Prior art date
Links
- 239000011159 matrix material Substances 0.000 title abstract 4
- 238000000034 method Methods 0.000 title abstract 4
- 239000000758 substrate Substances 0.000 title abstract 3
- 230000007847 structural defect Effects 0.000 title 1
- 230000007547 defect Effects 0.000 abstract 2
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
- H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136259—Repairing; Defects
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11449996 | 1996-05-09 | ||
JP30282296A JP3304272B2 (ja) | 1996-05-09 | 1996-11-14 | アクティブマトリクス基板およびその構造欠陥処置方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW373112B true TW373112B (en) | 1999-11-01 |
Family
ID=26453227
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086104939A TW373112B (en) | 1996-05-09 | 1997-04-16 | Active matrix substrate and method of correcting method of structural defect thereof |
Country Status (4)
Country | Link |
---|---|
US (2) | US5977563A (zh) |
JP (1) | JP3304272B2 (zh) |
KR (1) | KR100263829B1 (zh) |
TW (1) | TW373112B (zh) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW409194B (en) * | 1995-11-28 | 2000-10-21 | Sharp Kk | Active matrix substrate and liquid crystal display apparatus and method for producing the same |
JP3304272B2 (ja) * | 1996-05-09 | 2002-07-22 | シャープ株式会社 | アクティブマトリクス基板およびその構造欠陥処置方法 |
US6822701B1 (en) * | 1998-09-04 | 2004-11-23 | Sharp Kabushiki Kaisha | Liquid crystal display apparatus |
EP1058310A3 (en) * | 1999-06-02 | 2009-11-18 | Sel Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP4384293B2 (ja) * | 1999-07-06 | 2009-12-16 | エーユー オプトロニクス コーポレイション | 液晶表示パネル、表示装置、識別マーク検出装置、検出表示システム、tftアレイ・リペア装置及び識別マーク検出方法 |
CN1195243C (zh) * | 1999-09-30 | 2005-03-30 | 三星电子株式会社 | 用于液晶显示器的薄膜晶体管阵列屏板及其制造方法 |
JP2001223365A (ja) * | 2000-02-10 | 2001-08-17 | Fujitsu Ltd | 薄膜トランジスタ及びその製造方法 |
JP2001343660A (ja) | 2000-03-31 | 2001-12-14 | Sharp Corp | 液晶表示装置およびその欠陥修正方法 |
TW483173B (en) * | 2001-02-19 | 2002-04-11 | Au Optronics Corp | Thin film transistor array structure |
JP2002268084A (ja) * | 2001-03-08 | 2002-09-18 | Sharp Corp | アクティブマトリクス基板及びその製造方法 |
KR100796749B1 (ko) | 2001-05-16 | 2008-01-22 | 삼성전자주식회사 | 액정 표시 장치용 박막 트랜지스터 어레이 기판 |
JP2004054069A (ja) * | 2002-07-23 | 2004-02-19 | Advanced Display Inc | 表示装置及び表示装置の断線修復方法 |
JP4686122B2 (ja) * | 2003-11-28 | 2011-05-18 | 東芝モバイルディスプレイ株式会社 | アクティブマトリクス型表示装置及びその製造方法 |
US7375218B2 (en) * | 2004-09-17 | 2008-05-20 | Boehringer Ingelheim International Gmbh | Process for preparing macrocyclic HCV protease inhibitors |
JP4572686B2 (ja) * | 2005-01-14 | 2010-11-04 | パナソニック電工株式会社 | 静電容量型半導体物理量センサ及びその製造方法 |
JP4622532B2 (ja) * | 2005-01-18 | 2011-02-02 | 三菱電機株式会社 | 表示装置および表示装置の欠陥修復方法 |
JP4622674B2 (ja) * | 2005-05-23 | 2011-02-02 | パナソニック株式会社 | 液晶表示装置 |
US8411215B2 (en) * | 2007-09-20 | 2013-04-02 | Sharp Kabushiki Kaisha | Active matrix substrate, liquid crystal panel, liquid crystal display unit, liquid crystal display device, television receiver, and method for producing active matrix substrate |
KR102055537B1 (ko) | 2018-07-17 | 2019-12-12 | 조한구 | 곡선 포장이 가능한 일체형 거푸집 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6448037A (en) * | 1987-08-18 | 1989-02-22 | Matsushita Electric Ind Co Ltd | Active matrix array |
EP0438138B1 (en) * | 1990-01-17 | 1995-03-15 | Kabushiki Kaisha Toshiba | Liquid-crystal display device of active matrix type |
JPH04261521A (ja) * | 1991-01-21 | 1992-09-17 | Mitsubishi Electric Corp | 液晶表示装置及びその表示欠陥修復方法 |
JPH04324819A (ja) * | 1991-04-25 | 1992-11-13 | Seiko Epson Corp | アクティブマトリックス表示体の画素欠陥修正方法及びその表示体 |
JPH05165055A (ja) * | 1991-12-13 | 1993-06-29 | Hosiden Corp | 画素分割液晶表示素子 |
US5682211A (en) * | 1994-04-28 | 1997-10-28 | Xerox Corporation | Integrated dark matrix for an active matrix liquid crystal display with pixel electrodes overlapping gate data lines |
US5641974A (en) * | 1995-06-06 | 1997-06-24 | Ois Optical Imaging Systems, Inc. | LCD with bus lines overlapped by pixel electrodes and photo-imageable insulating layer therebetween |
JP3304272B2 (ja) * | 1996-05-09 | 2002-07-22 | シャープ株式会社 | アクティブマトリクス基板およびその構造欠陥処置方法 |
-
1996
- 1996-11-14 JP JP30282296A patent/JP3304272B2/ja not_active Expired - Fee Related
-
1997
- 1997-04-15 US US08/842,795 patent/US5977563A/en not_active Expired - Lifetime
- 1997-04-16 TW TW086104939A patent/TW373112B/zh not_active IP Right Cessation
- 1997-04-21 KR KR1019970014794A patent/KR100263829B1/ko not_active IP Right Cessation
-
1999
- 1999-08-20 US US09/377,830 patent/US6297520B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5977563A (en) | 1999-11-02 |
JPH1026768A (ja) | 1998-01-27 |
US6297520B1 (en) | 2001-10-02 |
JP3304272B2 (ja) | 2002-07-22 |
KR970076016A (ko) | 1997-12-10 |
KR100263829B1 (ko) | 2000-08-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW373112B (en) | Active matrix substrate and method of correcting method of structural defect thereof | |
US7006064B2 (en) | Liquid crystal display | |
US6552706B1 (en) | Active matrix type liquid crystal display apparatus | |
KR920010532A (ko) | 전기 광학 장치와 그 구동방법 | |
EP1054381A3 (en) | Active matrix liquid crystal display system of the horizontal field type with voltage for minimum brightness greater than zero, and driving method therefor | |
JP2004101863A (ja) | 液晶表示装置 | |
EP0766118A3 (en) | Active-matrix type liquid crystal display device and method of compensating for defective pixel | |
WO2018188161A1 (zh) | 一种有机发光显示面板的修补方法及有机发光显示面板 | |
EP0767449A3 (en) | Method and circuit for driving active matrix liquid crystal panel with control of the average driving voltage | |
US7671932B2 (en) | Active matrix substrate and pixel defect correcting method therefor | |
US8164731B2 (en) | Liquid crystal display device | |
US6992747B2 (en) | Method and repairing defects in a liquid crystal display | |
MXPA02007366A (es) | Circuito de excitacion para el control de brillantez mejorado en pantallas de cristal liquido y metodo para el mismo.. | |
EP3637395A1 (en) | Display apparatus and method for displaying image thereby | |
JP2005221598A (ja) | 表示装置 | |
US6707522B2 (en) | Liquid crystal display device | |
US8441473B2 (en) | Method for removing offset between channels of LCD panel | |
JPH04324819A (ja) | アクティブマトリックス表示体の画素欠陥修正方法及びその表示体 | |
KR100542309B1 (ko) | 액정표시소자 | |
KR100646778B1 (ko) | 액정 표시장치 | |
KR900005471A (ko) | 반도체집적회로장치 및 그 검사방법 | |
JP2005055562A (ja) | 液晶表示装置およびその駆動方法 | |
JPS63225229A (ja) | 薄膜トランジスタアレイ | |
KR100476597B1 (ko) | 박막 트랜지스터 액정 표시 장치 | |
JPS58171845A (ja) | 電気光学装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |