TW369725B - Method and apparatus for imaging semiconductor devices - Google Patents
Method and apparatus for imaging semiconductor devicesInfo
- Publication number
- TW369725B TW369725B TW087105344A TW87105344A TW369725B TW 369725 B TW369725 B TW 369725B TW 087105344 A TW087105344 A TW 087105344A TW 87105344 A TW87105344 A TW 87105344A TW 369725 B TW369725 B TW 369725B
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor devices
- absorption
- focused
- enhances
- imaging
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/302—Contactless testing
- G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
- G01R31/311—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation of integrated circuits
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microscoopes, Condenser (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Tests Of Electronic Circuits (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/856,561 US6316950B1 (en) | 1997-05-15 | 1997-05-15 | Method and apparatus for imaging semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
TW369725B true TW369725B (en) | 1999-09-11 |
Family
ID=25323953
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW087105344A TW369725B (en) | 1997-05-15 | 1998-04-09 | Method and apparatus for imaging semiconductor devices |
Country Status (6)
Country | Link |
---|---|
US (1) | US6316950B1 (zh) |
EP (1) | EP0878841B1 (zh) |
JP (1) | JP3217750B2 (zh) |
KR (1) | KR100271843B1 (zh) |
DE (1) | DE69830946T2 (zh) |
TW (1) | TW369725B (zh) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6542180B1 (en) * | 2000-01-07 | 2003-04-01 | Mitutoyo Corporation | Systems and methods for adjusting lighting of a part based on a plurality of selected regions of an image of the part |
US6563324B1 (en) * | 2000-11-30 | 2003-05-13 | Cognex Technology And Investment Corporation | Semiconductor device image inspection utilizing rotation invariant scale invariant method |
DE10206980A1 (de) * | 2002-02-20 | 2003-08-21 | Leica Microsystems | Mikroskop, Detektor und Verfahren zur Mikroskopie |
AU2002321962A1 (en) * | 2002-07-09 | 2004-02-02 | Vincent Ricardo M. Daria | Method for generating high-contrast images of semiconductor sites via one-photon optical beaminduced current imaging and confocal reflectance microscopy |
JP2010181288A (ja) * | 2009-02-05 | 2010-08-19 | Renesas Electronics Corp | 半導体集積回路の解析装置及び解析方法 |
US9201096B2 (en) | 2010-09-08 | 2015-12-01 | Dcg Systems, Inc. | Laser-assisted device alteration using synchronized laser pulses |
TWI440869B (zh) * | 2010-09-08 | 2014-06-11 | Dcg Systems Inc | 使用雙光子吸收的雷射輔助裝置修改 |
WO2013188046A1 (en) * | 2012-05-16 | 2013-12-19 | Dcg Systems, Inc. | Laser-assisted device alteration using synchronized laser pulses |
WO2014129377A1 (ja) | 2013-02-19 | 2014-08-28 | 浜松ホトニクス株式会社 | 電界集中位置観察装置および電界集中位置観察方法 |
US10191111B2 (en) | 2013-03-24 | 2019-01-29 | Dcg Systems, Inc. | Synchronized pulsed LADA for the simultaneous acquisition of timing diagrams and laser-induced upsets |
WO2021250984A1 (ja) | 2020-06-08 | 2021-12-16 | 浜松ホトニクス株式会社 | 半導体検査方法及び半導体検査装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4346348A (en) * | 1980-02-28 | 1982-08-24 | The United States Of America As Represented By The Secretary Of The Navy | Laser technique for accurately determining the compensation density in N-type narrow gap semiconductor |
US5034613A (en) | 1989-11-14 | 1991-07-23 | Cornell Research Foundation, Inc. | Two-photon laser microscopy |
US5289407A (en) | 1991-07-22 | 1994-02-22 | Cornell Research Foundation, Inc. | Method for three dimensional optical data storage and retrieval |
US5334540A (en) | 1991-11-14 | 1994-08-02 | Mitsubishi Denki Kabushiki Kaisha | OBIC observation method and apparatus therefor |
US5430305A (en) * | 1994-04-08 | 1995-07-04 | The United States Of America As Represented By The United States Department Of Energy | Light-induced voltage alteration for integrated circuit analysis |
US5708371A (en) | 1995-03-16 | 1998-01-13 | Mitsubishi Denki Kabushiki Kaisha | Scanning photoinduced current analyzer capable of detecting photoinduced current in nonbiased specimen |
-
1997
- 1997-05-15 US US08/856,561 patent/US6316950B1/en not_active Expired - Lifetime
-
1998
- 1998-04-09 TW TW087105344A patent/TW369725B/zh not_active IP Right Cessation
- 1998-05-05 EP EP98303500A patent/EP0878841B1/en not_active Expired - Lifetime
- 1998-05-05 DE DE69830946T patent/DE69830946T2/de not_active Expired - Lifetime
- 1998-05-15 JP JP13289498A patent/JP3217750B2/ja not_active Expired - Fee Related
- 1998-05-15 KR KR1019980017633A patent/KR100271843B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
JPH10332794A (ja) | 1998-12-18 |
KR19980087127A (ko) | 1998-12-05 |
EP0878841A3 (en) | 2000-02-23 |
EP0878841B1 (en) | 2005-07-27 |
DE69830946T2 (de) | 2006-04-20 |
KR100271843B1 (ko) | 2001-01-15 |
EP0878841A2 (en) | 1998-11-18 |
US6316950B1 (en) | 2001-11-13 |
DE69830946D1 (de) | 2005-09-01 |
JP3217750B2 (ja) | 2001-10-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |