TW367559B - Charged particle beam exposure apparatus - Google Patents

Charged particle beam exposure apparatus

Info

Publication number
TW367559B
TW367559B TW086116619A TW86116619A TW367559B TW 367559 B TW367559 B TW 367559B TW 086116619 A TW086116619 A TW 086116619A TW 86116619 A TW86116619 A TW 86116619A TW 367559 B TW367559 B TW 367559B
Authority
TW
Taiwan
Prior art keywords
charged particle
optical path
particle beam
optical
measurement
Prior art date
Application number
TW086116619A
Other languages
English (en)
Inventor
Kenichi Kawakami
Tatsuro Okawa
Kazushi Ishida
Akiyoshi Tsuda
Original Assignee
Fujitsu Ltd
Advantest Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd, Advantest Corp filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of TW367559B publication Critical patent/TW367559B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70716Stages
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H01J37/3045Object or beam position registration
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/681Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30Electron or ion beam tubes for processing objects
    • H01J2237/317Processing objects on a microscale
    • H01J2237/3175Lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW086116619A 1997-04-10 1997-11-07 Charged particle beam exposure apparatus TW367559B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP09224797A JP3678533B2 (ja) 1997-04-10 1997-04-10 荷電粒子ビーム露光装置

Publications (1)

Publication Number Publication Date
TW367559B true TW367559B (en) 1999-08-21

Family

ID=14049106

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086116619A TW367559B (en) 1997-04-10 1997-11-07 Charged particle beam exposure apparatus

Country Status (6)

Country Link
US (1) US5966200A (zh)
EP (1) EP0878822B1 (zh)
JP (1) JP3678533B2 (zh)
KR (1) KR100281848B1 (zh)
DE (1) DE69715380T2 (zh)
TW (1) TW367559B (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11307445A (ja) * 1998-04-23 1999-11-05 Nikon Corp 荷電粒子線露光装置及びその投影マスク
EP2027966B1 (en) * 2007-08-20 2010-04-21 Soonhan Engineering Corp. Sample traveling stage with flexure mechanism module to absorb the deformation of the slide
KR100973530B1 (ko) * 2007-08-20 2010-08-02 순환엔지니어링 주식회사 슬라이드변형흡수용 유연기구모듈을 이용한 시편이송장치
JP2015211119A (ja) 2014-04-25 2015-11-24 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置
CN109490307B (zh) * 2019-01-24 2023-11-03 沈阳工程学院 基于小孔成像测量金属线胀系数的装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4063103A (en) * 1975-04-11 1977-12-13 Tokyo Shibaura Electric Co., Ltd. Electron beam exposure apparatus
JPS5398781A (en) * 1976-11-25 1978-08-29 Jeol Ltd Electron ray exposure unit
JPS5754319A (ja) * 1980-09-18 1982-03-31 Fujitsu Ltd Denshibiimurokosochi
JPS57162431A (en) * 1981-03-31 1982-10-06 Jeol Ltd Method for exposure to electron beam
US4642438A (en) * 1984-11-19 1987-02-10 International Business Machines Corporation Workpiece mounting and clamping system having submicron positioning repeatability
JPS62273722A (ja) * 1986-05-21 1987-11-27 Nec Corp 電子ビ−ム露光装置
JPS62272722A (ja) * 1986-05-21 1987-11-26 Clarion Co Ltd Ttl論理レベルcmos入力バツフア
US4891526A (en) * 1986-12-29 1990-01-02 Hughes Aircraft Company X-Y-θ-Z positioning stage
JPH0785112B2 (ja) * 1987-02-16 1995-09-13 キヤノン株式会社 ステージ装置
US4943730A (en) * 1988-09-19 1990-07-24 Jeol Ltd. Charged particle beam lithography method
JPH0513037A (ja) * 1991-07-02 1993-01-22 Fujitsu Ltd 荷電粒子ビーム装置及びその制御方法
US5325180A (en) * 1992-12-31 1994-06-28 International Business Machines Corporation Apparatus for identifying and distinguishing temperature and system induced measuring errors
JPH10502210A (ja) * 1994-06-28 1998-02-24 ライカ リトグラフィー システムズ リミテッド 電子ビームリトグラフ機械
JPH09223475A (ja) * 1996-02-19 1997-08-26 Nikon Corp 電磁偏向器、及び該偏向器を用いた荷電粒子線転写装置

Also Published As

Publication number Publication date
JPH10284361A (ja) 1998-10-23
KR19980079602A (ko) 1998-11-25
DE69715380T2 (de) 2003-02-13
EP0878822A1 (en) 1998-11-18
JP3678533B2 (ja) 2005-08-03
DE69715380D1 (de) 2002-10-17
KR100281848B1 (ko) 2001-04-02
EP0878822B1 (en) 2002-09-11
US5966200A (en) 1999-10-12

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees