TW358941B - Data signal distribution circuit for synchronous memory device - Google Patents

Data signal distribution circuit for synchronous memory device

Info

Publication number
TW358941B
TW358941B TW084113929A TW84113929A TW358941B TW 358941 B TW358941 B TW 358941B TW 084113929 A TW084113929 A TW 084113929A TW 84113929 A TW84113929 A TW 84113929A TW 358941 B TW358941 B TW 358941B
Authority
TW
Taiwan
Prior art keywords
signal
data
distribution circuit
internal address
flashing
Prior art date
Application number
TW084113929A
Other languages
English (en)
Inventor
Jae-Jin Lee
Original Assignee
Hyundai Electronics Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Ind filed Critical Hyundai Electronics Ind
Application granted granted Critical
Publication of TW358941B publication Critical patent/TW358941B/zh

Links

Classifications

    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02Addressing or allocation; Relocation
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1006Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
TW084113929A 1994-12-31 1995-12-27 Data signal distribution circuit for synchronous memory device TW358941B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940040590A KR0140481B1 (ko) 1994-12-31 1994-12-31 동기식 메모리장치의 데이타신호 분배회로

Publications (1)

Publication Number Publication Date
TW358941B true TW358941B (en) 1999-05-21

Family

ID=19406226

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084113929A TW358941B (en) 1994-12-31 1995-12-27 Data signal distribution circuit for synchronous memory device

Country Status (6)

Country Link
US (1) US5621698A (zh)
JP (1) JP2971385B2 (zh)
KR (1) KR0140481B1 (zh)
DE (1) DE19549156B4 (zh)
GB (1) GB2296591B (zh)
TW (1) TW358941B (zh)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4090088B2 (ja) * 1996-09-17 2008-05-28 富士通株式会社 半導体装置システム及び半導体装置
TW353176B (en) * 1996-09-20 1999-02-21 Hitachi Ltd A semiconductor device capable of holding signals independent of the pulse width of an external clock and a computer system including the semiconductor
JP3979690B2 (ja) * 1996-12-27 2007-09-19 富士通株式会社 半導体記憶装置システム及び半導体記憶装置
JP3244035B2 (ja) * 1997-08-15 2002-01-07 日本電気株式会社 半導体記憶装置
US6965974B1 (en) 1997-11-14 2005-11-15 Agere Systems Inc. Dynamic partitioning of memory banks among multiple agents
US6215703B1 (en) * 1998-12-04 2001-04-10 Intel Corporation In order queue inactivity timer to improve DRAM arbiter operation
JP2001084762A (ja) * 1999-09-16 2001-03-30 Matsushita Electric Ind Co Ltd 半導体メモリ装置
KR100365432B1 (ko) * 2000-08-09 2002-12-18 주식회사 하이닉스반도체 센스 앰프 구동 신호 발생기
US7573301B2 (en) * 2002-12-02 2009-08-11 Silverbrook Research Pty Ltd Temperature based filter for an on-chip system clock
US20090319802A1 (en) * 2002-12-02 2009-12-24 Silverbrook Research Pty Ltd Key Genaration In An Integrated Circuit
DE10338303B4 (de) * 2003-08-20 2005-11-17 Infineon Technologies Ag Schaltungsanordnung zur Verteilung eines Eingangssignals in eine oder mehrere Zeitpositionen
KR100557636B1 (ko) * 2003-12-23 2006-03-10 주식회사 하이닉스반도체 클럭신호를 이용한 데이터 스트로브 회로
KR20130050852A (ko) * 2011-11-08 2013-05-16 에스케이하이닉스 주식회사 어드레스 디코딩 방법과 이를 이용한 반도체 메모리 장치
KR20230063386A (ko) * 2021-11-02 2023-05-09 삼성전자주식회사 비휘발성 메모리 장치

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5107465A (en) * 1989-09-13 1992-04-21 Advanced Micro Devices, Inc. Asynchronous/synchronous pipeline dual mode memory access circuit and method
KR100214435B1 (ko) * 1990-07-25 1999-08-02 사와무라 시코 동기식 버스트 엑세스 메모리
JP2977385B2 (ja) * 1992-08-31 1999-11-15 株式会社東芝 ダイナミックメモリ装置
JP2627475B2 (ja) * 1992-10-07 1997-07-09 三菱電機株式会社 半導体メモリ装置
US5481500A (en) * 1994-07-22 1996-01-02 International Business Machines Corporation Precharged bit decoder and sense amplifier with integrated latch usable in pipelined memories
JPH0855471A (ja) * 1994-08-12 1996-02-27 Nec Corp 同期型半導体記憶装置

Also Published As

Publication number Publication date
DE19549156B4 (de) 2006-06-14
JP2971385B2 (ja) 1999-11-02
GB2296591A (en) 1996-07-03
GB9526693D0 (en) 1996-02-28
KR960024984A (ko) 1996-07-20
JPH08287685A (ja) 1996-11-01
KR0140481B1 (ko) 1998-07-01
US5621698A (en) 1997-04-15
DE19549156A1 (de) 1996-07-04
GB2296591B (en) 1998-09-09

Similar Documents

Publication Publication Date Title
TW358941B (en) Data signal distribution circuit for synchronous memory device
EP1154435A3 (en) Write circuitry for a synchronous ram
KR960032493A (ko) 집적 회로 메모리
UA28018C2 (uk) Імпульсний генератор високої напруги
EP0133789A3 (en) Electronic switch
EP0091715A3 (en) System for power supply to and switching of a number of electrical appliances
TW326530B (en) Memory device with reduced number of fuses
HK56695A (en) Memory timing circuit employing models.
KR910003666A (ko) 반도체기억장치의 데이터출력제어회로
TW328133B (en) Column select line enable circuit of semiconductor memory device
TW374921B (en) Clock controlled column decoder
TW347612B (en) Counter and semiconductor memory including the counter
TW360868B (en) Pulse generating circuit having address transition detecting circuit
TW430803B (en) Clock synchronous memory
KR930005033A (ko) 불휘발성 메모리회로
EP0646926A3 (en) Deactivation circuit using edge transition detection to change operating characteristics of a memory device.
US5237573A (en) Method and apparatus for selectively switching between input signals
TW336324B (en) Column select signal control circuit
EP0373703A3 (en) Pulse generator circuit arrangement
TW326571B (en) Improved memory device performance by delayed power-down
TW364112B (en) Semiconductor memory having redundancy circuit
JPS5782217A (en) Pcm recorder possible for synchronizing run
EP0982641A3 (de) Busanschaltung
MY121526A (en) Switching apparatus for horizontal driving pulse
KR0174500B1 (ko) 반도체 칩의 클럭 제어회로