TW356603B - Semiconductor device and manufacturing method thereof - Google Patents

Semiconductor device and manufacturing method thereof

Info

Publication number
TW356603B
TW356603B TW086107860A TW86107860A TW356603B TW 356603 B TW356603 B TW 356603B TW 086107860 A TW086107860 A TW 086107860A TW 86107860 A TW86107860 A TW 86107860A TW 356603 B TW356603 B TW 356603B
Authority
TW
Taiwan
Prior art keywords
forming
semiconductor device
conductive
insulator film
earthing
Prior art date
Application number
TW086107860A
Other languages
English (en)
Inventor
Masahiro Ishida
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of TW356603B publication Critical patent/TW356603B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H10B10/125—Static random access memory [SRAM] devices comprising a MOSFET load element the MOSFET being a thin film transistor [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/15—Static random access memory [SRAM] devices comprising a resistor load element

Landscapes

  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW086107860A 1997-02-14 1997-06-06 Semiconductor device and manufacturing method thereof TW356603B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9030975A JPH10229135A (ja) 1997-02-14 1997-02-14 半導体装置及びその製造方法

Publications (1)

Publication Number Publication Date
TW356603B true TW356603B (en) 1999-04-21

Family

ID=12318672

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086107860A TW356603B (en) 1997-02-14 1997-06-06 Semiconductor device and manufacturing method thereof

Country Status (6)

Country Link
US (1) US6440790B1 (zh)
JP (1) JPH10229135A (zh)
KR (1) KR100363352B1 (zh)
CN (1) CN1190801A (zh)
DE (1) DE19731956C2 (zh)
TW (1) TW356603B (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004241473A (ja) * 2003-02-04 2004-08-26 Renesas Technology Corp 半導体記憶装置
JP4291751B2 (ja) 2004-07-23 2009-07-08 富士通マイクロエレクトロニクス株式会社 半導体記憶装置
US20070025141A1 (en) * 2005-07-26 2007-02-01 Fujitsu Limited SRAM, semiconductor memory device, and method for maintaining data in SRAM
JP5066855B2 (ja) * 2005-07-26 2012-11-07 富士通株式会社 Ｓｒａｍ，半導体記憶装置，ｓｒａｍにおけるデータ維持方法，及び電子装置
US7759957B2 (en) * 2007-07-27 2010-07-20 United Microelectronics Corp. Method for fabricating a test structure
CN101364573B (zh) * 2007-08-10 2010-08-04 联华电子股份有限公司 测试结构及测试方法
US20090085394A1 (en) * 2007-09-27 2009-04-02 Vantage Trailer, Inc. Belly dump trailer
US8830732B2 (en) * 2012-11-30 2014-09-09 Taiwan Semiconductor Manufacturing Company, Ltd. SRAM cell comprising FinFETs
CN108695328B (zh) * 2017-04-05 2021-08-17 联华电子股份有限公司 静态随机存取存储器元件及形成方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2818190B2 (ja) * 1988-03-18 1998-10-30 株式会社東芝 不揮発性半導体記憶装置およびその製造方法
JPH02244760A (ja) * 1989-03-17 1990-09-28 Fujitsu Ltd 半導体記憶装置
JPH07109863B2 (ja) * 1989-04-13 1995-11-22 日本電気株式会社 能動層２層積層記憶素子
JPH04102369A (ja) 1990-08-22 1992-04-03 Mitsubishi Electric Corp 半導体装置
US5324961A (en) 1991-01-30 1994-06-28 Texas Instruments Incorporated Stacked capacitor SRAM cell
EP0499824B1 (en) 1991-01-30 1996-09-25 Texas Instruments Incorporated Stacked capacitor SRAM cell
EP0501884B1 (en) 1991-03-01 1999-04-28 Fujitsu Limited Semiconductor memory device having thin film transistor and method of producing the same
JP2665644B2 (ja) * 1992-08-11 1997-10-22 三菱電機株式会社 半導体記憶装置
US5377139A (en) 1992-12-11 1994-12-27 Motorola, Inc. Process forming an integrated circuit
JPH0773115B2 (ja) 1993-02-01 1995-08-02 日本電気株式会社 半導体記憶装置
JPH07112014A (ja) 1993-10-18 1995-05-02 Sekisui Chem Co Ltd 噴流装置の検査設備
JP3337825B2 (ja) 1994-06-29 2002-10-28 三菱電機株式会社 内部配線を有する半導体装置およびその製造方法
US5661325A (en) * 1994-07-29 1997-08-26 Nkk Corporation SRAM structure
JP2647045B2 (ja) 1995-02-28 1997-08-27 日本電気株式会社 半導体記憶装置及びその製造方法
US5545584A (en) * 1995-07-03 1996-08-13 Taiwan Semiconductor Manufacturing Company Unified contact plug process for static random access memory (SRAM) having thin film transistors
US5773341A (en) * 1996-01-18 1998-06-30 Micron Technology, Inc. Method of making capacitor and conductive line constructions

Also Published As

Publication number Publication date
KR19980069994A (ko) 1998-10-26
CN1190801A (zh) 1998-08-19
DE19731956C2 (de) 2001-04-26
JPH10229135A (ja) 1998-08-25
US6440790B1 (en) 2002-08-27
DE19731956A1 (de) 1998-08-20
KR100363352B1 (ko) 2003-01-24

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