TW353220B - Silicon nitride circuit board and semiconductor module - Google Patents

Silicon nitride circuit board and semiconductor module

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Publication number
TW353220B
TW353220B TW086111850A TW86111850A TW353220B TW 353220 B TW353220 B TW 353220B TW 086111850 A TW086111850 A TW 086111850A TW 86111850 A TW86111850 A TW 86111850A TW 353220 B TW353220 B TW 353220B
Authority
TW
Taiwan
Prior art keywords
silicon nitride
semiconductor module
circuit board
high thermal
nitride substrate
Prior art date
Application number
TW086111850A
Other languages
English (en)
Chinese (zh)
Inventor
Hiroshi Komorita
Kazuo Ikeda
Michiyasu Komatsu
Yoshitoshi Sato
Takayuki Naba
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP21872596A external-priority patent/JP3193305B2/ja
Priority claimed from JP8246449A external-priority patent/JP2939444B2/ja
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of TW353220B publication Critical patent/TW353220B/zh

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    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
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    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Products (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
TW086111850A 1996-08-20 1997-08-19 Silicon nitride circuit board and semiconductor module TW353220B (en)

Applications Claiming Priority (3)

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JP21872596A JP3193305B2 (ja) 1996-08-20 1996-08-20 複合回路基板
JP8246449A JP2939444B2 (ja) 1996-09-18 1996-09-18 多層窒化けい素回路基板
JP25002396 1996-09-20

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TW353220B true TW353220B (en) 1999-02-21

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US (1) US6232657B1 (enExample)
EP (1) EP0874399A1 (enExample)
TW (1) TW353220B (enExample)
WO (1) WO1998008256A1 (enExample)

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JPH09172116A (ja) * 1995-12-21 1997-06-30 Mitsubishi Electric Corp 半導体装置

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI729158B (zh) * 2016-06-30 2021-06-01 日商三菱綜合材料股份有限公司 銅/陶瓷接合體、及絕緣電路基板
US11028022B2 (en) 2016-06-30 2021-06-08 Mitsubishi Materials Corporation Copper-ceramic bonded body and insulation circuit substrate

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US6232657B1 (en) 2001-05-15
EP0874399A1 (en) 1998-10-28
EP0874399A4 (enExample) 1998-11-25
WO1998008256A1 (fr) 1998-02-26

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