TW350999B - Method for forming metal lines of semiconductor device - Google Patents
Method for forming metal lines of semiconductor deviceInfo
- Publication number
- TW350999B TW350999B TW086117626A TW86117626A TW350999B TW 350999 B TW350999 B TW 350999B TW 086117626 A TW086117626 A TW 086117626A TW 86117626 A TW86117626 A TW 86117626A TW 350999 B TW350999 B TW 350999B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- forming
- semiconductor device
- metal lines
- forming metal
- Prior art date
Links
- 229910052751 metal Inorganic materials 0.000 title abstract 3
- 239000002184 metal Substances 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 230000003667 anti-reflective effect Effects 0.000 abstract 3
- 230000004888 barrier function Effects 0.000 abstract 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 2
- 229910052721 tungsten Inorganic materials 0.000 abstract 2
- 239000010937 tungsten Substances 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76885—By forming conductive members before deposition of protective insulating material, e.g. pillars, studs
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960068902A KR100248342B1 (ko) | 1996-12-20 | 1996-12-20 | 반도체소자의 금속 배선 형성방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW350999B true TW350999B (en) | 1999-01-21 |
Family
ID=19489694
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW086117626A TW350999B (en) | 1996-12-20 | 1997-11-25 | Method for forming metal lines of semiconductor device |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JP3238363B2 (zh) |
| KR (1) | KR100248342B1 (zh) |
| CN (1) | CN1099700C (zh) |
| DE (1) | DE19756227A1 (zh) |
| GB (1) | GB2320613B (zh) |
| TW (1) | TW350999B (zh) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100307629B1 (ko) * | 1999-04-30 | 2001-09-26 | 윤종용 | 하이드로 카본계의 가스를 이용한 반사방지막의 형성 및 적용방법 |
| KR100555484B1 (ko) * | 1999-09-03 | 2006-03-03 | 삼성전자주식회사 | 반도체장치의 텅스텐 배선 제조방법 |
| JP3733021B2 (ja) * | 2000-12-15 | 2006-01-11 | シャープ株式会社 | プラズマプロセス方法 |
| KR100399442B1 (ko) * | 2001-06-28 | 2003-09-29 | 주식회사 하이닉스반도체 | 금속 배선 형성 방법 |
| KR100425467B1 (ko) * | 2001-09-29 | 2004-03-30 | 삼성전자주식회사 | 반도체소자를 위한 건식 식각방법 |
| CN101593689B (zh) * | 2008-05-29 | 2010-12-22 | 中芯国际集成电路制造(北京)有限公司 | 光刻图案的形成方法和双镶嵌结构的制造方法 |
| JP5845714B2 (ja) * | 2011-08-19 | 2016-01-20 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5376585A (en) * | 1992-09-25 | 1994-12-27 | Texas Instruments Incorporated | Method for forming titanium tungsten local interconnect for integrated circuits |
| JPH06314671A (ja) * | 1993-04-30 | 1994-11-08 | Sony Corp | 半導体装置の製造方法 |
| JPH06318573A (ja) * | 1993-05-07 | 1994-11-15 | Sony Corp | 高融点金属のエッチング方法 |
| JPH0869995A (ja) * | 1994-08-30 | 1996-03-12 | Sony Corp | プラズマエッチング方法 |
-
1996
- 1996-12-20 KR KR1019960068902A patent/KR100248342B1/ko not_active IP Right Cessation
-
1997
- 1997-11-25 TW TW086117626A patent/TW350999B/zh not_active IP Right Cessation
- 1997-11-26 GB GB9725029A patent/GB2320613B/en not_active Expired - Fee Related
- 1997-12-16 JP JP34658297A patent/JP3238363B2/ja not_active Expired - Fee Related
- 1997-12-17 DE DE19756227A patent/DE19756227A1/de not_active Ceased
- 1997-12-17 CN CN97121734A patent/CN1099700C/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR100248342B1 (ko) | 2000-03-15 |
| CN1099700C (zh) | 2003-01-22 |
| GB9725029D0 (en) | 1998-01-28 |
| JP3238363B2 (ja) | 2001-12-10 |
| CN1185654A (zh) | 1998-06-24 |
| GB2320613A (en) | 1998-06-24 |
| GB2320613B (en) | 2002-02-13 |
| DE19756227A1 (de) | 1998-06-25 |
| JPH10189594A (ja) | 1998-07-21 |
| KR19980050124A (ko) | 1998-09-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |