TW347597B - Method of forming a groove in a semiconductor laser diode and a semiconductor laser diode - Google Patents

Method of forming a groove in a semiconductor laser diode and a semiconductor laser diode

Info

Publication number
TW347597B
TW347597B TW084100840A TW84100840A TW347597B TW 347597 B TW347597 B TW 347597B TW 084100840 A TW084100840 A TW 084100840A TW 84100840 A TW84100840 A TW 84100840A TW 347597 B TW347597 B TW 347597B
Authority
TW
Taiwan
Prior art keywords
etching
semiconductor laser
laser diode
forming
procedure
Prior art date
Application number
TW084100840A
Other languages
English (en)
Inventor
E Andros Frank
Toshinari Fujimorui
Tetu Nagao
Nobuyuki Hosoi
Hideki Goto
Original Assignee
Mitsubishi Chem Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP02736894A external-priority patent/JP3795931B2/ja
Priority claimed from JP2737094A external-priority patent/JPH07221345A/ja
Application filed by Mitsubishi Chem Corp filed Critical Mitsubishi Chem Corp
Application granted granted Critical
Publication of TW347597B publication Critical patent/TW347597B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2081—Methods of obtaining the confinement using special etching techniques
    • H01S5/209—Methods of obtaining the confinement using special etching techniques special etch stop layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
    • H01S5/2209—GaInP based
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Geometry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Weting (AREA)
TW084100840A 1994-01-31 1995-01-28 Method of forming a groove in a semiconductor laser diode and a semiconductor laser diode TW347597B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP02736894A JP3795931B2 (ja) 1994-01-31 1994-01-31 半導体発光素子
JP2737094A JPH07221345A (ja) 1994-01-31 1994-01-31 半導体発光素子構造におけるグルーブの形成方法

Publications (1)

Publication Number Publication Date
TW347597B true TW347597B (en) 1998-12-11

Family

ID=26365283

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084100840A TW347597B (en) 1994-01-31 1995-01-28 Method of forming a groove in a semiconductor laser diode and a semiconductor laser diode

Country Status (4)

Country Link
US (2) US5566198A (zh)
EP (1) EP0666625B1 (zh)
DE (1) DE69502211T2 (zh)
TW (1) TW347597B (zh)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0964452A (ja) * 1995-08-18 1997-03-07 Mitsubishi Electric Corp 半導体レーザ装置，及びその製造方法
JPH09116222A (ja) * 1995-10-17 1997-05-02 Mitsubishi Electric Corp 半導体レーザの製造方法，及び半導体レーザ
US6172998B1 (en) * 1996-11-18 2001-01-09 Mitsubishi Chemical Corporation Semiconductor laser diode
US6074960A (en) * 1997-08-20 2000-06-13 Micron Technology, Inc. Method and composition for selectively etching against cobalt silicide
JP3607061B2 (ja) * 1997-10-29 2005-01-05 株式会社ルネサステクノロジ 半導体装置の製造方法
GB2346735B (en) * 1999-02-13 2004-03-31 Sharp Kk A semiconductor laser device
US6304587B1 (en) 1999-06-14 2001-10-16 Corning Incorporated Buried ridge semiconductor laser with aluminum-free confinement layer
US6400743B1 (en) * 1999-08-05 2002-06-04 Fuji Photo Film Co., Ltd. High-power semiconductor laser device having current confinement structure and index-guided structure
WO2001022545A1 (fr) * 1999-09-22 2001-03-29 Mitsubishi Chemical Corporation Element lumineux et module d'element lumineux
US6888867B2 (en) * 2001-08-08 2005-05-03 Nobuhiko Sawaki Semiconductor laser device and fabrication method thereof
CN1259760C (zh) * 2001-08-31 2006-06-14 三井化学株式会社 半导体激光元件
JP2003273467A (ja) * 2002-03-15 2003-09-26 Toshiba Corp 半導体レーザおよびその製造方法
US8324010B2 (en) 2010-06-29 2012-12-04 Himax Imaging, Inc. Light pipe etch control for CMOS fabrication
US20120018831A1 (en) * 2010-07-20 2012-01-26 Himax Imaging, Inc. Light pipe fabrication with improved sensitivity
KR102440071B1 (ko) * 2020-10-16 2022-09-05 (주)큐에스아이 반도체 레이저 다이오드 소자 및 그 제조 방법

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58175886A (ja) * 1982-04-07 1983-10-15 Mitsubishi Electric Corp 半導体レ−ザ
JPS599990A (ja) * 1982-07-07 1984-01-19 Mitsubishi Electric Corp 半導体レ−ザの製造方法
US4613387A (en) * 1983-02-28 1986-09-23 Itt Industries Inc. Injection laser manufacture
US4661961A (en) * 1983-06-20 1987-04-28 American Telephone And Telegraph Company, At&T Bell Laboratories Buried heterostructure devices with unique contact-facilitating layers
JPS60154689A (ja) * 1984-01-25 1985-08-14 Hitachi Ltd 発光素子およびこれを用いた光通信装置
GB2160823B (en) * 1984-06-28 1987-05-28 Stc Plc Semiconductor devices and their fabrication
GB2175442B (en) * 1985-05-15 1989-05-24 Stc Plc Laser manufacture
GB8622767D0 (en) * 1986-09-22 1986-10-29 British Telecomm Semiconductor structures
JP2561163B2 (ja) * 1990-02-28 1996-12-04 富士通株式会社 メサ埋め込み型光半導体装置の製造方法
JPH0485503A (ja) * 1990-07-30 1992-03-18 Nippon Telegr & Teleph Corp <Ntt> 半導体光入出力回路の製造方法
KR940005764B1 (ko) * 1991-02-06 1994-06-23 삼성전자 주식회사 레이저 다이오드 어레이 및 그 제조방법
US5212704A (en) * 1991-11-27 1993-05-18 At&T Bell Laboratories Article comprising a strained layer quantum well laser
US5257276A (en) * 1992-04-03 1993-10-26 California Institute Of Technology Strained layer InP/InGaAs quantum well laser
JP2823476B2 (ja) * 1992-05-14 1998-11-11 三菱電機株式会社 半導体レーザおよびその製造方法
NL9301656A (nl) * 1993-09-24 1995-04-18 Nederland Ptt Geintegreerde optische polarisatie-omzetter met versterkte periodieke koppeling.
KR100357787B1 (ko) * 1994-01-31 2003-01-24 가부시끼가이샤 히다치 세이사꾸쇼 도파로형광소자의제조방법
US5665614A (en) * 1995-06-06 1997-09-09 Hughes Electronics Method for making fully self-aligned submicron heterojunction bipolar transistor

Also Published As

Publication number Publication date
DE69502211D1 (de) 1998-06-04
EP0666625A1 (en) 1995-08-09
US5566198A (en) 1996-10-15
DE69502211T2 (de) 1998-09-17
US5920767A (en) 1999-07-06
EP0666625B1 (en) 1998-04-29

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