TW344136B - Improvements in integrated circuit static write--read and erase semiconductor memory - Google Patents

Improvements in integrated circuit static write--read and erase semiconductor memory

Info

Publication number
TW344136B
TW344136B TW085109831A TW85109831A TW344136B TW 344136 B TW344136 B TW 344136B TW 085109831 A TW085109831 A TW 085109831A TW 85109831 A TW85109831 A TW 85109831A TW 344136 B TW344136 B TW 344136B
Authority
TW
Taiwan
Prior art keywords
data
electromagnetic
bit line
data write
read
Prior art date
Application number
TW085109831A
Other languages
English (en)
Inventor
Sempa Iga Adam
Original Assignee
Hyundai Electronics Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Ind filed Critical Hyundai Electronics Ind
Application granted granted Critical
Publication of TW344136B publication Critical patent/TW344136B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/02—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using magnetic or inductive elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5607—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using magnetic storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5692—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency read-only digital stores using storage elements with more than two stable states
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/24—Bit-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/18—Bit line organisation; Bit line lay-out

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
TW085109831A 1995-03-31 1996-08-13 Improvements in integrated circuit static write--read and erase semiconductor memory TW344136B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/414,383 US5798963A (en) 1995-03-31 1995-03-31 Integrated circuit static write--read and erase semiconductor memory

Publications (1)

Publication Number Publication Date
TW344136B true TW344136B (en) 1998-11-01

Family

ID=23641216

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085109831A TW344136B (en) 1995-03-31 1996-08-13 Improvements in integrated circuit static write--read and erase semiconductor memory

Country Status (2)

Country Link
US (1) US5798963A (zh)
TW (1) TW344136B (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11306750A (ja) * 1998-04-20 1999-11-05 Univ Kyoto 磁気型半導体集積記憶装置
KR100422945B1 (ko) * 2001-12-26 2004-03-12 주식회사 하이닉스반도체 바이폴라 접합 트랜지스터를 이용한 마그네틱 램의 기억방법
KR100829556B1 (ko) * 2002-05-29 2008-05-14 삼성전자주식회사 자기 저항 램 및 그의 제조방법

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3348184A (en) * 1967-10-17 Hall generator
US3373247A (en) * 1963-04-29 1968-03-12 John F. Hyland Semi-conductor junction magnetic tape playback head
FR1375070A (fr) * 1963-07-05 1964-10-16 Csf Appareils électriques tournants à effet hall
US3443036A (en) * 1965-04-06 1969-05-06 Us Army Hall effect magnetic tape scanning device
US3366908A (en) * 1965-05-07 1968-01-30 Siemens Ag Contact-free rotary resistor arrangement
US3435323A (en) * 1967-08-29 1969-03-25 Us Navy Magnetoresistive modulator
US3858190A (en) * 1973-06-18 1974-12-31 Electronic Memories & Magnetic Multi-bit core read out system
US5313096A (en) * 1992-03-16 1994-05-17 Dense-Pac Microsystems, Inc. IC chip package having chip attached to and wire bonded within an overlying substrate
US5329486A (en) * 1992-04-24 1994-07-12 Motorola, Inc. Ferromagnetic memory device

Also Published As

Publication number Publication date
US5798963A (en) 1998-08-25

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