TW344136B - Improvements in integrated circuit static write--read and erase semiconductor memory - Google Patents
Improvements in integrated circuit static write--read and erase semiconductor memoryInfo
- Publication number
- TW344136B TW344136B TW085109831A TW85109831A TW344136B TW 344136 B TW344136 B TW 344136B TW 085109831 A TW085109831 A TW 085109831A TW 85109831 A TW85109831 A TW 85109831A TW 344136 B TW344136 B TW 344136B
- Authority
- TW
- Taiwan
- Prior art keywords
- data
- electromagnetic
- bit line
- data write
- read
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/02—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using magnetic or inductive elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5607—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using magnetic storage elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5692—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency read-only digital stores using storage elements with more than two stable states
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/24—Bit-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/18—Bit line organisation; Bit line lay-out
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/414,383 US5798963A (en) | 1995-03-31 | 1995-03-31 | Integrated circuit static write--read and erase semiconductor memory |
Publications (1)
Publication Number | Publication Date |
---|---|
TW344136B true TW344136B (en) | 1998-11-01 |
Family
ID=23641216
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW085109831A TW344136B (en) | 1995-03-31 | 1996-08-13 | Improvements in integrated circuit static write--read and erase semiconductor memory |
Country Status (2)
Country | Link |
---|---|
US (1) | US5798963A (zh) |
TW (1) | TW344136B (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11306750A (ja) * | 1998-04-20 | 1999-11-05 | Univ Kyoto | 磁気型半導体集積記憶装置 |
KR100422945B1 (ko) * | 2001-12-26 | 2004-03-12 | 주식회사 하이닉스반도체 | 바이폴라 접합 트랜지스터를 이용한 마그네틱 램의 기억방법 |
KR100829556B1 (ko) * | 2002-05-29 | 2008-05-14 | 삼성전자주식회사 | 자기 저항 램 및 그의 제조방법 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3348184A (en) * | 1967-10-17 | Hall generator | ||
US3373247A (en) * | 1963-04-29 | 1968-03-12 | John F. Hyland | Semi-conductor junction magnetic tape playback head |
FR1375070A (fr) * | 1963-07-05 | 1964-10-16 | Csf | Appareils électriques tournants à effet hall |
US3443036A (en) * | 1965-04-06 | 1969-05-06 | Us Army | Hall effect magnetic tape scanning device |
US3366908A (en) * | 1965-05-07 | 1968-01-30 | Siemens Ag | Contact-free rotary resistor arrangement |
US3435323A (en) * | 1967-08-29 | 1969-03-25 | Us Navy | Magnetoresistive modulator |
US3858190A (en) * | 1973-06-18 | 1974-12-31 | Electronic Memories & Magnetic | Multi-bit core read out system |
US5313096A (en) * | 1992-03-16 | 1994-05-17 | Dense-Pac Microsystems, Inc. | IC chip package having chip attached to and wire bonded within an overlying substrate |
US5329486A (en) * | 1992-04-24 | 1994-07-12 | Motorola, Inc. | Ferromagnetic memory device |
-
1995
- 1995-03-31 US US08/414,383 patent/US5798963A/en not_active Expired - Lifetime
-
1996
- 1996-08-13 TW TW085109831A patent/TW344136B/zh active
Also Published As
Publication number | Publication date |
---|---|
US5798963A (en) | 1998-08-25 |
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