TW343381B - Silicon nitride ceramic circuit substrate and semiconductor device using the same - Google Patents

Silicon nitride ceramic circuit substrate and semiconductor device using the same

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Publication number
TW343381B
TW343381B TW085112086A TW85112086A TW343381B TW 343381 B TW343381 B TW 343381B TW 085112086 A TW085112086 A TW 085112086A TW 85112086 A TW85112086 A TW 85112086A TW 343381 B TW343381 B TW 343381B
Authority
TW
Taiwan
Prior art keywords
silicon nitride
nitride ceramic
circuit substrate
semiconductor device
same
Prior art date
Application number
TW085112086A
Other languages
English (en)
Inventor
Mitsuo Kasori
Akihiro Horiguchi
Hiroyasu Sumino
Fumio Ueno
Original Assignee
Toshiba Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Co Ltd filed Critical Toshiba Co Ltd
Application granted granted Critical
Publication of TW343381B publication Critical patent/TW343381B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
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    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/64—Burning or sintering processes
    • C04B35/645—Pressure sintering
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/24—Fusion seal compositions being frit compositions having non-frit additions, i.e. for use as seals between dissimilar materials, e.g. glass and metal; Glass solders
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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    • C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
    • C04B2237/708—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the interlayers
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/86—Joining of two substrates at their largest surfaces, one surface being complete joined and covered, the other surface not, e.g. a small plate joined at it's largest surface on top of a larger plate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
    • Y10T428/2495—Thickness [relative or absolute]
    • Y10T428/24967—Absolute thicknesses specified
    • Y10T428/24975—No layer or component greater than 5 mils thick
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
    • Y10T428/264—Up to 3 mils
    • Y10T428/265—1 mil or less

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Products (AREA)
  • Insulated Metal Substrates For Printed Circuits (AREA)
  • Laminated Bodies (AREA)
TW085112086A 1995-09-28 1996-10-03 Silicon nitride ceramic circuit substrate and semiconductor device using the same TW343381B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP25031795 1995-09-28
JP8070012A JPH09153568A (ja) 1995-09-28 1996-03-26 窒化珪素セラミック回路基板および半導体装置

Publications (1)

Publication Number Publication Date
TW343381B true TW343381B (en) 1998-10-21

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TW085112086A TW343381B (en) 1995-09-28 1996-10-03 Silicon nitride ceramic circuit substrate and semiconductor device using the same

Country Status (5)

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US (1) US6110596A (zh)
JP (1) JPH09153568A (zh)
KR (1) KR100244823B1 (zh)
CN (1) CN1149666C (zh)
TW (1) TW343381B (zh)

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US6678144B2 (en) 2001-03-01 2004-01-13 Shinko Electric Industries Co., Ltd Capacitor, circuit board with built-in capacitor and method for producing the same

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JP3868854B2 (ja) * 2002-06-14 2007-01-17 Ｄｏｗａホールディングス株式会社 金属−セラミックス接合体およびその製造方法
KR20040051961A (ko) * 2002-12-13 2004-06-19 삼화전자공업 주식회사 태양전지용 기판 및 그 제조방법
US7148577B2 (en) * 2003-12-31 2006-12-12 Intel Corporation Materials for electronic devices
US7019390B2 (en) * 2004-02-03 2006-03-28 Visteon Global Technologies, Inc. Silicon nitride insulating substrate for power semiconductor module
DE102005042554B4 (de) * 2005-08-10 2008-04-30 Curamik Electronics Gmbh Metall-Keramik-Substrat und Verfahren zur Herstellung eines Metall-Keramik-Substrats
JP2010171536A (ja) * 2009-01-20 2010-08-05 Seiko Instruments Inc 圧電振動子
JP5839992B2 (ja) * 2009-07-06 2016-01-06 株式会社東芝 Ｌｅｄランプ及びヘッドライト
CN102548197B (zh) * 2012-01-30 2016-08-03 华为技术有限公司 一种高速印制电路板
WO2013191288A1 (ja) * 2012-06-21 2013-12-27 京セラ株式会社 回路基板およびこれを備える電子装置
JP5844299B2 (ja) * 2013-03-25 2016-01-13 株式会社日立製作所 接合材、接合構造体
WO2014156835A1 (ja) * 2013-03-29 2014-10-02 三菱マテリアル株式会社 金属－セラミックス板積層体の製造装置及び製造方法、パワーモジュール用基板の製造装置及び製造方法
DE102013108610A1 (de) * 2013-08-06 2015-02-12 Rogers Germany Gmbh Metall-Keramik-Substrat sowie Verfahren zum Herstellen eines Metall-Keramik-Substrates
JP6724481B2 (ja) * 2016-03-30 2020-07-15 日立金属株式会社 セラミック基板及びその製造方法
US20190376359A1 (en) * 2018-06-10 2019-12-12 Pa&E, Hermetic Solutions Group, Llc Hydrophobic dielectric sealing materials
DE102020108867A1 (de) 2020-03-31 2021-09-30 Schott Ag Einschmelzglas und dessen Verwendung

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6678144B2 (en) 2001-03-01 2004-01-13 Shinko Electric Industries Co., Ltd Capacitor, circuit board with built-in capacitor and method for producing the same

Also Published As

Publication number Publication date
JPH09153568A (ja) 1997-06-10
KR100244823B1 (ko) 2000-02-15
CN1149666C (zh) 2004-05-12
US6110596A (en) 2000-08-29
CN1155759A (zh) 1997-07-30
KR970018760A (ko) 1997-04-30

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