KR970018760A - 질화규소 세라믹회로기판 및 이것을 이용한 반도체장치 - Google Patents
질화규소 세라믹회로기판 및 이것을 이용한 반도체장치 Download PDFInfo
- Publication number
- KR970018760A KR970018760A KR1019960042429A KR19960042429A KR970018760A KR 970018760 A KR970018760 A KR 970018760A KR 1019960042429 A KR1019960042429 A KR 1019960042429A KR 19960042429 A KR19960042429 A KR 19960042429A KR 970018760 A KR970018760 A KR 970018760A
- Authority
- KR
- South Korea
- Prior art keywords
- circuit board
- glass layer
- silicon nitride
- nitride ceramic
- glass
- Prior art date
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- 229910052581 Si3N4 Inorganic materials 0.000 title claims abstract description 10
- 239000000919 ceramic Substances 0.000 title claims abstract description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims abstract description 10
- 239000004065 semiconductor Substances 0.000 title claims abstract 4
- 239000011521 glass Substances 0.000 claims abstract 18
- 229910052751 metal Inorganic materials 0.000 claims abstract 7
- 239000002184 metal Substances 0.000 claims abstract 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 4
- 238000010438 heat treatment Methods 0.000 claims 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 2
- 229910052802 copper Inorganic materials 0.000 claims 2
- 239000010949 copper Substances 0.000 claims 2
- 229910052759 nickel Inorganic materials 0.000 claims 2
- 239000000725 suspension Substances 0.000 claims 2
- 229910052723 transition metal Inorganic materials 0.000 claims 2
- 150000003624 transition metals Chemical class 0.000 claims 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 1
- 229910052783 alkali metal Inorganic materials 0.000 claims 1
- 150000001340 alkali metals Chemical class 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 239000011651 chromium Substances 0.000 claims 1
- 229910017052 cobalt Inorganic materials 0.000 claims 1
- 239000010941 cobalt Substances 0.000 claims 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 claims 1
- 238000007598 dipping method Methods 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- -1 maganis Chemical compound 0.000 claims 1
- 150000004767 nitrides Chemical group 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 239000000075 oxide glass Substances 0.000 claims 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- 238000004528 spin coating Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
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- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/24—Fusion seal compositions being frit compositions having non-frit additions, i.e. for use as seals between dissimilar materials, e.g. glass and metal; Glass solders
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- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/584—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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Abstract
본 발명의 반도체장치는 열전도율이 실온하에서 80W/mk 이상인 질화규소 세라믹판(1)을 구비하고, 상기 질화규소 세라믹판에 유리층을 매개로 금속판(2)이 접합되어 있고, 상기 반도체장치에는 회로기판이 탑재되어 있다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
도 1은 질화규소 세라믹 회로기판의 도면.
Claims (16)
- 열전도율이 실온하에서 80W/mk 이상인 질화규소 세라믹판을 구비하고, 상기 질화규소 세라믹판에 유리층을 매개로 금속판이 접합되어 있는 것을 특징으로 하는 회로기판.
- 제1항에 있어서, 상기 유리층은 산화물유리층인 것을 특징으로 하는 회로기판.
- 제1항에 있어서, 상기 유리층은 질소량이 0.05~7중량%인 질화물유리층인 것을 특징으로 하는 회로기판.
- 제1항에 있어서, 상기 유리층은 결정화 유리층인 것을 특징으로 하는 회로기판.
- 제1항에 있어서, 상기 유리층은 산화물확산에서 알카리금속을 0.01~2중량%를 함유한 것을 특징으로 하는 회로기판.
- 제1항에 있어서, 상기 유리층은 산화물 환산시 천이금속을 0.01~5중량% 함유한 것을 특징으로 하는 회로기판.
- 제1항에 있어서, 상기 유리층은 산화물 환산시 알루미늄산화물을 0.02~5중량% 함유한 것을 특징으로 하는 회로기판.
- 제6항에 있어서, 상기 천이금속은 티타늄, 크로뮴, 철, 코발트, 마가니스, 니켈, 구리, 지코늄 또는 탄탈륨인 것을 특징으로 하는 회로기판.
- 제1항에 있어서, 상기 금속판은 구리로 구성되고, 유리는 실온으로부터 300℃에서의 평균열확장율이 7~13×10-6/℃인 것을 특징으로 하는 회로기판.
- 제1항에 있어서, 상기 금속판은 알루미늄으로 구성되고, 유리는 실온으로부터 300℃에서의 평균열확장율이 10~18×10-6/℃인 것을 특징으로 하는 회로기판.
- 제1항에 있어서, 상기 금속판은 니켈로 구성되고, 유리는 실온으로부터 300℃에서의 평균열확장율이 5~10×10-6/℃인 것을 특징으로 하는 회로기판.
- 제1항에 있어서, 상기 질화규소 세라믹판/금속판의 두께비는 5~1, 금속판/유리층의 두께비는 2~40인 것을 특징으로 하는 회로기판.
- 제1항에 있어서, 상기 질화규소 세라믹판은 비산화분위기에서 가열되어 얻어지는 것을 특징으로 하는 회로기판.
- 제1항에 있어서, 상기 유리층은 스핀코팅법에 의해 질화규소 세라믹판상에 코팅된 유리현탁부를 가열함으로써 제공되는 것을 특징으로 하는 회로기판.
- 제1항에 있어서, 상기 유리층은 디핑법에 의해 질화규소 세라믹판상에 코팅된 유리현탁부를 가열함으로써 제공되는 것을 특징으로 하는 회로기판.
- 제1항에 있어서, 반도체장치는 제1항에 따른 기판을 사용하는 회로기판.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
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JP95-250317 | 1995-09-28 | ||
JP25031795 | 1995-09-28 | ||
JP8070012A JPH09153568A (ja) | 1995-09-28 | 1996-03-26 | 窒化珪素セラミック回路基板および半導体装置 |
JP96-070012 | 1996-03-26 |
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KR970018760A true KR970018760A (ko) | 1997-04-30 |
KR100244823B1 KR100244823B1 (ko) | 2000-02-15 |
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KR1019960042429A KR100244823B1 (ko) | 1995-09-28 | 1996-09-25 | 질화규소 세라믹회로기판 및 이것을 이용한 반도체장치 |
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US (1) | US6110596A (ko) |
JP (1) | JPH09153568A (ko) |
KR (1) | KR100244823B1 (ko) |
CN (1) | CN1149666C (ko) |
TW (1) | TW343381B (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20040051961A (ko) * | 2002-12-13 | 2004-06-19 | 삼화전자공업 주식회사 | 태양전지용 기판 및 그 제조방법 |
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Publication number | Priority date | Publication date | Assignee | Title |
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US6294244B1 (en) * | 1997-12-22 | 2001-09-25 | Kyocera Corporation | Wiring board having excellent heat-radiating property |
JP3792129B2 (ja) | 2001-03-01 | 2006-07-05 | 新光電気工業株式会社 | キャパシタ、キャパシタ内蔵回路基板及びそれらの製造方法 |
JP3868854B2 (ja) * | 2002-06-14 | 2007-01-17 | Dowaホールディングス株式会社 | 金属−セラミックス接合体およびその製造方法 |
US7148577B2 (en) * | 2003-12-31 | 2006-12-12 | Intel Corporation | Materials for electronic devices |
US7019390B2 (en) * | 2004-02-03 | 2006-03-28 | Visteon Global Technologies, Inc. | Silicon nitride insulating substrate for power semiconductor module |
DE102005042554B4 (de) * | 2005-08-10 | 2008-04-30 | Curamik Electronics Gmbh | Metall-Keramik-Substrat und Verfahren zur Herstellung eines Metall-Keramik-Substrats |
JP2010171536A (ja) * | 2009-01-20 | 2010-08-05 | Seiko Instruments Inc | 圧電振動子 |
JP5839992B2 (ja) * | 2009-07-06 | 2016-01-06 | 株式会社東芝 | Ledランプ及びヘッドライト |
CN102548197B (zh) * | 2012-01-30 | 2016-08-03 | 华为技术有限公司 | 一种高速印制电路板 |
JP5905962B2 (ja) * | 2012-06-21 | 2016-04-20 | 京セラ株式会社 | 回路基板およびこれを備える電子装置 |
JP5844299B2 (ja) * | 2013-03-25 | 2016-01-13 | 株式会社日立製作所 | 接合材、接合構造体 |
JP6314567B2 (ja) | 2013-03-29 | 2018-04-25 | 三菱マテリアル株式会社 | 金属−セラミックス板積層体の製造装置及び製造方法、パワーモジュール用基板の製造装置及び製造方法 |
DE102013108610A1 (de) * | 2013-08-06 | 2015-02-12 | Rogers Germany Gmbh | Metall-Keramik-Substrat sowie Verfahren zum Herstellen eines Metall-Keramik-Substrates |
JP6724481B2 (ja) * | 2016-03-30 | 2020-07-15 | 日立金属株式会社 | セラミック基板及びその製造方法 |
US20190376359A1 (en) * | 2018-06-10 | 2019-12-12 | Pa&E, Hermetic Solutions Group, Llc | Hydrophobic dielectric sealing materials |
DE102020108867A1 (de) | 2020-03-31 | 2021-09-30 | Schott Ag | Einschmelzglas und dessen Verwendung |
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GB761045A (en) * | 1952-08-29 | 1956-11-07 | Lodge Plugs Ltd | Improvements in or relating to the bonding of ceramics with copper |
JPS5842260A (ja) * | 1981-09-07 | 1983-03-11 | Mitsubishi Electric Corp | 半導体装置 |
DE3376829D1 (en) * | 1982-06-29 | 1988-07-07 | Toshiba Kk | Method for directly bonding ceramic and metal members and laminated body of the same |
JPS59150453A (ja) * | 1982-12-23 | 1984-08-28 | Toshiba Corp | 半導体モジユ−ル用基板の製造方法 |
US4647477A (en) * | 1984-12-07 | 1987-03-03 | Kollmorgen Technologies Corporation | Surface preparation of ceramic substrates for metallization |
US4608354A (en) * | 1984-12-24 | 1986-08-26 | Gte Laboratories Incorporated | Silicon nitride substrate |
US5100714A (en) * | 1986-07-24 | 1992-03-31 | Ceramic Packaging, Inc. | Metallized ceramic substrate and method therefor |
JP3011433B2 (ja) * | 1990-05-25 | 2000-02-21 | 株式会社東芝 | セラミックス回路基板の製造方法 |
EP0484916A3 (en) * | 1990-11-07 | 1993-06-02 | Sumitomo Electric Industries, Limited | Silicon nitride sintered body |
JP2554210B2 (ja) * | 1991-03-19 | 1996-11-13 | 株式会社日立製作所 | 金属接合回路基板およびそれを用いた電子装置 |
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- 1996-03-26 JP JP8070012A patent/JPH09153568A/ja active Pending
- 1996-09-25 KR KR1019960042429A patent/KR100244823B1/ko not_active IP Right Cessation
- 1996-09-26 US US08/721,346 patent/US6110596A/en not_active Expired - Lifetime
- 1996-09-27 CN CNB961144181A patent/CN1149666C/zh not_active Expired - Fee Related
- 1996-10-03 TW TW085112086A patent/TW343381B/zh active
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KR20040051961A (ko) * | 2002-12-13 | 2004-06-19 | 삼화전자공업 주식회사 | 태양전지용 기판 및 그 제조방법 |
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TW343381B (en) | 1998-10-21 |
CN1155759A (zh) | 1997-07-30 |
JPH09153568A (ja) | 1997-06-10 |
KR100244823B1 (ko) | 2000-02-15 |
US6110596A (en) | 2000-08-29 |
CN1149666C (zh) | 2004-05-12 |
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