TW343354B - Reticle and pattern and correction method using the shifting of the reticle - Google Patents
Reticle and pattern and correction method using the shifting of the reticleInfo
- Publication number
- TW343354B TW343354B TW086109575A TW86109575A TW343354B TW 343354 B TW343354 B TW 343354B TW 086109575 A TW086109575 A TW 086109575A TW 86109575 A TW86109575 A TW 86109575A TW 343354 B TW343354 B TW 343354B
- Authority
- TW
- Taiwan
- Prior art keywords
- pattern
- axis direction
- measuring
- outer circumference
- reticle
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8041197A JPH10274855A (ja) | 1997-03-31 | 1997-03-31 | レチクルおよびそれによって転写されたパターンならびに補正方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW343354B true TW343354B (en) | 1998-10-21 |
Family
ID=13717561
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086109575A TW343354B (en) | 1997-03-31 | 1997-07-08 | Reticle and pattern and correction method using the shifting of the reticle |
Country Status (5)
Country | Link |
---|---|
US (1) | US5868560A (zh) |
JP (1) | JPH10274855A (zh) |
KR (1) | KR100239020B1 (zh) |
DE (1) | DE19736959C2 (zh) |
TW (1) | TW343354B (zh) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3169068B2 (ja) * | 1997-12-04 | 2001-05-21 | 日本電気株式会社 | 電子線露光方法及び半導体ウエハ |
JP4301584B2 (ja) * | 1998-01-14 | 2009-07-22 | 株式会社ルネサステクノロジ | レチクル、それを用いた露光装置、露光方法および半導体装置の製造方法 |
JP3400340B2 (ja) * | 1998-02-20 | 2003-04-28 | 株式会社新川 | フリップチップボンディング方法及び装置 |
US6200708B1 (en) * | 1998-03-30 | 2001-03-13 | Worldwide Semiconductor Manufacturing Corporation | Method for automatically determining adjustments for stepping photolithography exposures |
TW436878B (en) * | 1998-09-08 | 2001-05-28 | Mosel Vitelic Inc | Method for checking accuracy of a measuring instrument for overlay machine |
US6071656A (en) * | 1999-07-07 | 2000-06-06 | United Microelectronics Corp. | Photolithography technique utilizing alignment marks at scribe line intersections |
US6258611B1 (en) * | 1999-10-21 | 2001-07-10 | Vlsi Technology, Inc. | Method for determining translation portion of misalignment error in a stepper |
US6541283B1 (en) * | 1999-10-21 | 2003-04-01 | Koninklijke Philips Electronics N.V. | Method for determining magnification error portion of total misalignment error in a stepper |
US6639676B1 (en) | 1999-10-21 | 2003-10-28 | Koninklijke Philips Electronics N.V. | Method for determining rotational error portion of total misalignment error in a stepper |
US6552790B1 (en) * | 2001-02-20 | 2003-04-22 | Advanced Micro Devices, Inc. | System and method for facilitating wafer alignment by mitigating effects of reticle rotation on overlay |
JP2002134397A (ja) * | 2000-10-25 | 2002-05-10 | Sony Corp | フォトマスク、半導体装置、半導体チップパターンの露光方法、チップアライメント精度検査装置 |
DE10142316A1 (de) * | 2001-08-30 | 2003-04-17 | Advanced Micro Devices Inc | Halbleiterstruktur und Verfahren zur Bestimmung kritischer Dimensionen und Überlagerungsfehler |
JP2003084425A (ja) * | 2001-09-07 | 2003-03-19 | Fujitsu Ltd | レチクル、パターン位置精度の測定装置および測定方法 |
DE10224164B4 (de) | 2002-05-31 | 2007-05-10 | Advanced Micro Devices, Inc., Sunnyvale | Eine zweidimensionale Struktur zum Bestimmen einer Überlagerungsgenauigkeit mittels Streuungsmessung |
EP1700340A1 (en) * | 2003-12-23 | 2006-09-13 | Koninklijke Philips Electronics N.V. | Wafer with optical control modules in dicing paths |
JP4972278B2 (ja) * | 2004-11-29 | 2012-07-11 | 富士通セミコンダクター株式会社 | レチクル及び半導体装置の製造方法 |
US8029947B2 (en) | 2005-09-01 | 2011-10-04 | Micron Technology, Inc. | Systems and methods for implementing and manufacturing reticles for use in photolithography tools |
TWI417649B (zh) * | 2005-12-28 | 2013-12-01 | 尼康股份有限公司 | 十字標記運送裝置、曝光裝置、十字標記運送方法以及十字標記的處理方法 |
US20070298329A1 (en) * | 2006-06-22 | 2007-12-27 | Chi-Ching Huang | Photomask and method for using the same |
US9659873B2 (en) * | 2015-08-26 | 2017-05-23 | United Microelectronics Corp. | Semiconductor structure with aligning mark and method of forming the same |
CN105467780B (zh) * | 2016-01-06 | 2017-08-29 | 京东方科技集团股份有限公司 | 曝光对位装置和曝光对位方法 |
JP6362716B2 (ja) * | 2017-02-03 | 2018-07-25 | ルネサスエレクトロニクス株式会社 | マスクおよび半導体装置 |
US10971409B2 (en) | 2018-12-27 | 2021-04-06 | Micron Technology, Inc. | Methods and systems for measuring semiconductor devices |
CN113835309B (zh) * | 2021-09-24 | 2023-07-21 | 长江先进存储产业创新中心有限责任公司 | 用于双重成像工艺的套刻精度的检测结构及其检测方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19510449B4 (de) * | 1994-03-22 | 2005-09-15 | Hyundai Electronics Industries Co., Ltd., Ichon | Retikel |
-
1997
- 1997-03-31 JP JP8041197A patent/JPH10274855A/ja active Pending
- 1997-07-08 TW TW086109575A patent/TW343354B/zh not_active IP Right Cessation
- 1997-08-25 DE DE19736959A patent/DE19736959C2/de not_active Expired - Fee Related
- 1997-09-04 KR KR1019970045702A patent/KR100239020B1/ko not_active IP Right Cessation
- 1997-09-30 US US08/940,946 patent/US5868560A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR100239020B1 (ko) | 2000-01-15 |
DE19736959C2 (de) | 2003-08-21 |
KR19980079345A (ko) | 1998-11-25 |
DE19736959A1 (de) | 1998-10-08 |
JPH10274855A (ja) | 1998-10-13 |
US5868560A (en) | 1999-02-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |