TW343354B - Reticle and pattern and correction method using the shifting of the reticle - Google Patents

Reticle and pattern and correction method using the shifting of the reticle

Info

Publication number
TW343354B
TW343354B TW086109575A TW86109575A TW343354B TW 343354 B TW343354 B TW 343354B TW 086109575 A TW086109575 A TW 086109575A TW 86109575 A TW86109575 A TW 86109575A TW 343354 B TW343354 B TW 343354B
Authority
TW
Taiwan
Prior art keywords
pattern
axis direction
measuring
outer circumference
reticle
Prior art date
Application number
TW086109575A
Other languages
English (en)
Inventor
Naohisa Tamada
Toshihide Kawauchi
Yuki Miyamoto
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of TW343354B publication Critical patent/TW343354B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
TW086109575A 1997-03-31 1997-07-08 Reticle and pattern and correction method using the shifting of the reticle TW343354B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8041197A JPH10274855A (ja) 1997-03-31 1997-03-31 レチクルおよびそれによって転写されたパターンならびに補正方法

Publications (1)

Publication Number Publication Date
TW343354B true TW343354B (en) 1998-10-21

Family

ID=13717561

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086109575A TW343354B (en) 1997-03-31 1997-07-08 Reticle and pattern and correction method using the shifting of the reticle

Country Status (5)

Country Link
US (1) US5868560A (zh)
JP (1) JPH10274855A (zh)
KR (1) KR100239020B1 (zh)
DE (1) DE19736959C2 (zh)
TW (1) TW343354B (zh)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3169068B2 (ja) * 1997-12-04 2001-05-21 日本電気株式会社 電子線露光方法及び半導体ウエハ
JP4301584B2 (ja) * 1998-01-14 2009-07-22 株式会社ルネサステクノロジ レチクル、それを用いた露光装置、露光方法および半導体装置の製造方法
JP3400340B2 (ja) * 1998-02-20 2003-04-28 株式会社新川 フリップチップボンディング方法及び装置
US6200708B1 (en) * 1998-03-30 2001-03-13 Worldwide Semiconductor Manufacturing Corporation Method for automatically determining adjustments for stepping photolithography exposures
TW436878B (en) * 1998-09-08 2001-05-28 Mosel Vitelic Inc Method for checking accuracy of a measuring instrument for overlay machine
US6071656A (en) * 1999-07-07 2000-06-06 United Microelectronics Corp. Photolithography technique utilizing alignment marks at scribe line intersections
US6258611B1 (en) * 1999-10-21 2001-07-10 Vlsi Technology, Inc. Method for determining translation portion of misalignment error in a stepper
US6541283B1 (en) * 1999-10-21 2003-04-01 Koninklijke Philips Electronics N.V. Method for determining magnification error portion of total misalignment error in a stepper
US6639676B1 (en) 1999-10-21 2003-10-28 Koninklijke Philips Electronics N.V. Method for determining rotational error portion of total misalignment error in a stepper
US6552790B1 (en) * 2001-02-20 2003-04-22 Advanced Micro Devices, Inc. System and method for facilitating wafer alignment by mitigating effects of reticle rotation on overlay
JP2002134397A (ja) * 2000-10-25 2002-05-10 Sony Corp フォトマスク、半導体装置、半導体チップパターンの露光方法、チップアライメント精度検査装置
DE10142316A1 (de) * 2001-08-30 2003-04-17 Advanced Micro Devices Inc Halbleiterstruktur und Verfahren zur Bestimmung kritischer Dimensionen und Überlagerungsfehler
JP2003084425A (ja) * 2001-09-07 2003-03-19 Fujitsu Ltd レチクル、パターン位置精度の測定装置および測定方法
DE10224164B4 (de) 2002-05-31 2007-05-10 Advanced Micro Devices, Inc., Sunnyvale Eine zweidimensionale Struktur zum Bestimmen einer Überlagerungsgenauigkeit mittels Streuungsmessung
EP1700340A1 (en) * 2003-12-23 2006-09-13 Koninklijke Philips Electronics N.V. Wafer with optical control modules in dicing paths
JP4972278B2 (ja) * 2004-11-29 2012-07-11 富士通セミコンダクター株式会社 レチクル及び半導体装置の製造方法
US8029947B2 (en) 2005-09-01 2011-10-04 Micron Technology, Inc. Systems and methods for implementing and manufacturing reticles for use in photolithography tools
TWI417649B (zh) * 2005-12-28 2013-12-01 尼康股份有限公司 十字標記運送裝置、曝光裝置、十字標記運送方法以及十字標記的處理方法
US20070298329A1 (en) * 2006-06-22 2007-12-27 Chi-Ching Huang Photomask and method for using the same
US9659873B2 (en) * 2015-08-26 2017-05-23 United Microelectronics Corp. Semiconductor structure with aligning mark and method of forming the same
CN105467780B (zh) * 2016-01-06 2017-08-29 京东方科技集团股份有限公司 曝光对位装置和曝光对位方法
JP6362716B2 (ja) * 2017-02-03 2018-07-25 ルネサスエレクトロニクス株式会社 マスクおよび半導体装置
US10971409B2 (en) 2018-12-27 2021-04-06 Micron Technology, Inc. Methods and systems for measuring semiconductor devices
CN113835309B (zh) * 2021-09-24 2023-07-21 长江先进存储产业创新中心有限责任公司 用于双重成像工艺的套刻精度的检测结构及其检测方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19510449B4 (de) * 1994-03-22 2005-09-15 Hyundai Electronics Industries Co., Ltd., Ichon Retikel

Also Published As

Publication number Publication date
KR100239020B1 (ko) 2000-01-15
DE19736959C2 (de) 2003-08-21
KR19980079345A (ko) 1998-11-25
DE19736959A1 (de) 1998-10-08
JPH10274855A (ja) 1998-10-13
US5868560A (en) 1999-02-09

Similar Documents

Publication Publication Date Title
TW343354B (en) Reticle and pattern and correction method using the shifting of the reticle
SG53191G (en) Film for machining wafers
MY132588A (en) Apparatus and method for double-side polishing semiconductor wafers
TW340243B (en) Manufacturing method of semiconductor elements
TW335503B (en) Semiconductor thin film and manufacturing method and semiconductor device and its manufacturing method
MY129570A (en) Semiconductor integrated circuit device and a method of manufacturing the same
TW337556B (en) Phase shifting light shade, the phase shifting light shade frame and its manufacturing method
TW340197B (en) A lithographic mask repair and fabrication method
MY123345A (en) Semiconductor device, its fabrication method and electronic device
TW269052B (en) Process for semiconductor wafer, semiconductor integrated circuit and devices thereof
TW376536B (en) Substrate for device manufacturing, process for manufacturing the substrate, and method of exposure using the substrate
SE9000245D0 (sv) Halvledarkomponent och foerfarande foer dess framstaellning
EP1089128A3 (en) Exposure mask, exposure mask manufacturing method, and semiconductor device manufacturing method using exposure mask
EP0887846A3 (en) Method of reducing the formation of watermarks on semiconductor wafers
DE69122815D1 (de) Verfahren zur Bor-Diffusion in Halbleiterwafern
MY132487A (en) Silicon wafer, and method of manufacturing the same
EP0155138A3 (en) A reticle used in semiconductor device fabrication and a method for inspecting a reticle pattern thereon
DE69939458D1 (de) Halbleiterbearbeitungsvorrichtung
TW372331B (en) Manufacturing method for semiconductor integrated circuit apparatus and manufacturing method of phase shift mask for exposing with the semiconductor integrated circuit apparatus
MY142626A (en) Pattern for improved visual inspection of semiconductor devices
JPS6488546A (en) Method for exposing thick film resist
GB2328761B (en) A method for preparing masks for use in the manufacture of a semi-conductor IC wafer,and a combination of masks
WO2003017006A3 (en) A method of substrate processing and photoresist exposure
JPS6453545A (en) Semiconductor substrate having alignment mark and alignment using said mark
TW331023B (en) Overlap precision measuring mark, defect modification method, mask with the mark, and fabricating method and exposing method thereof

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees