GB2328761B - A method for preparing masks for use in the manufacture of a semi-conductor IC wafer,and a combination of masks - Google Patents

A method for preparing masks for use in the manufacture of a semi-conductor IC wafer,and a combination of masks

Info

Publication number
GB2328761B
GB2328761B GB9818216A GB9818216A GB2328761B GB 2328761 B GB2328761 B GB 2328761B GB 9818216 A GB9818216 A GB 9818216A GB 9818216 A GB9818216 A GB 9818216A GB 2328761 B GB2328761 B GB 2328761B
Authority
GB
United Kingdom
Prior art keywords
masks
origin
alignment areas
wafer
location
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9818216A
Other versions
GB2328761A (en
GB9818216D0 (en
Inventor
James Thompson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Heenar Research Ltd
Original Assignee
Analog Research and Development Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Analog Research and Development Ltd filed Critical Analog Research and Development Ltd
Publication of GB9818216D0 publication Critical patent/GB9818216D0/en
Publication of GB2328761A publication Critical patent/GB2328761A/en
Application granted granted Critical
Publication of GB2328761B publication Critical patent/GB2328761B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

The method comprises forming alignment areas 20 in a field 3 defined by a mask in a corresponding layer of an integrated circuit wafer to allow determination of the orientation of the wafer in a measuring apparatus. Each of the identical alignment areas 20 is formed adjacent to but offset from the origin 12 of the corresponding field. Critical dimension test features 31 are formed in each of the fields in corresponding layers at a location spaced from the alignment areas and the origin. The location at which the alignment areas are to be formed in each field are identified with respect to the origin. The locations at which the critical dimension test features are to be formed are identified with respect to the location of the alignment areas or the location of the origin. This allows reduction in the amount of co-ordinate data to be entered into measuring apparatus.
GB9818216A 1997-08-26 1998-08-20 A method for preparing masks for use in the manufacture of a semi-conductor IC wafer,and a combination of masks Expired - Fee Related GB2328761B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IE970628A IE970628A1 (en) 1997-08-26 1997-08-26 A method for preparing masks for use in the manufacture of a semi-conductor IC wafer, and a combination of masks

Publications (3)

Publication Number Publication Date
GB9818216D0 GB9818216D0 (en) 1998-10-14
GB2328761A GB2328761A (en) 1999-03-03
GB2328761B true GB2328761B (en) 2002-01-30

Family

ID=11041574

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9818216A Expired - Fee Related GB2328761B (en) 1997-08-26 1998-08-20 A method for preparing masks for use in the manufacture of a semi-conductor IC wafer,and a combination of masks

Country Status (2)

Country Link
GB (1) GB2328761B (en)
IE (1) IE970628A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6368879B1 (en) * 1999-09-22 2002-04-09 Advanced Micro Devices, Inc. Process control with control signal derived from metrology of a repetitive critical dimension feature of a test structure on the work piece
US6737205B2 (en) * 2002-04-30 2004-05-18 Motorola, Inc. Arrangement and method for transferring a pattern from a mask to a wafer
NL2011575C2 (en) * 2013-10-08 2015-04-09 Besi Netherlands B V Method for positioning a carrier with electronic components and electronic component produced with such method.

Also Published As

Publication number Publication date
GB2328761A (en) 1999-03-03
GB9818216D0 (en) 1998-10-14
IE970628A1 (en) 1999-03-10

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)

Free format text: REGISTERED BETWEEN 20100624 AND 20100630

PCNP Patent ceased through non-payment of renewal fee

Effective date: 20170820