TW343335B - Semiconductor memory device with single-cycle internal read/write function - Google Patents

Semiconductor memory device with single-cycle internal read/write function

Info

Publication number
TW343335B
TW343335B TW086109717A TW86109717A TW343335B TW 343335 B TW343335 B TW 343335B TW 086109717 A TW086109717 A TW 086109717A TW 86109717 A TW86109717 A TW 86109717A TW 343335 B TW343335 B TW 343335B
Authority
TW
Taiwan
Prior art keywords
input
data line
read
output data
column selection
Prior art date
Application number
TW086109717A
Other languages
English (en)
Inventor
Kyu-Han Han
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of TW343335B publication Critical patent/TW343335B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
TW086109717A 1996-08-08 1997-07-10 Semiconductor memory device with single-cycle internal read/write function TW343335B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960033083A KR100227272B1 (ko) 1996-08-08 1996-08-08 1 사이클 동작 내부 리드/라이트 기능을 가진 반도체 메모리 장치

Publications (1)

Publication Number Publication Date
TW343335B true TW343335B (en) 1998-10-21

Family

ID=19469145

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086109717A TW343335B (en) 1996-08-08 1997-07-10 Semiconductor memory device with single-cycle internal read/write function

Country Status (4)

Country Link
US (1) US5926426A (zh)
JP (1) JP4362151B2 (zh)
KR (1) KR100227272B1 (zh)
TW (1) TW343335B (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100268420B1 (ko) * 1997-12-31 2000-10-16 윤종용 반도체 메모리 장치 및 그 장치의 독출 방법
US6262936B1 (en) 1998-03-13 2001-07-17 Cypress Semiconductor Corp. Random access memory having independent read port and write port and process for writing to and reading from the same
US6262937B1 (en) 1998-03-13 2001-07-17 Cypress Semiconductor Corp. Synchronous random access memory having a read/write address bus and process for writing to and reading from the same
US6069839A (en) 1998-03-20 2000-05-30 Cypress Semiconductor Corp. Circuit and method for implementing single-cycle read/write operation(s), and random access memory including the circuit and/or practicing the method
KR100532433B1 (ko) * 2003-05-07 2005-11-30 삼성전자주식회사 하나의 패드를 통하여 데이터를 동시에 입출력하기 위한장치 및 방법

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06223562A (ja) * 1993-01-26 1994-08-12 Hitachi Ltd ビデオｒａｍ、及びグラフィックシステム
JPH07230691A (ja) * 1994-02-16 1995-08-29 Fujitsu Ltd 半導体記憶装置
US5680365A (en) * 1996-05-16 1997-10-21 Mitsubishi Semiconductor America, Inc. Shared dram I/O databus for high speed operation

Also Published As

Publication number Publication date
KR19980014220A (ko) 1998-05-25
JPH1092172A (ja) 1998-04-10
JP4362151B2 (ja) 2009-11-11
KR100227272B1 (ko) 1999-11-01
US5926426A (en) 1999-07-20

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees