TW340295B - Plasma source and method and apparatus for processing at least a surface of an article with plasma - Google Patents
Plasma source and method and apparatus for processing at least a surface of an article with plasmaInfo
- Publication number
- TW340295B TW340295B TW086101671A TW86101671A TW340295B TW 340295 B TW340295 B TW 340295B TW 086101671 A TW086101671 A TW 086101671A TW 86101671 A TW86101671 A TW 86101671A TW 340295 B TW340295 B TW 340295B
- Authority
- TW
- Taiwan
- Prior art keywords
- processing
- plasma
- article
- room
- dielectric plate
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H01J37/32688—Multi-cusp fields
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/624,010 US5669975A (en) | 1996-03-27 | 1996-03-27 | Plasma producing method and apparatus including an inductively-coupled plasma source |
Publications (1)
Publication Number | Publication Date |
---|---|
TW340295B true TW340295B (en) | 1998-09-11 |
Family
ID=24500251
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086101671A TW340295B (en) | 1996-03-27 | 1997-02-11 | Plasma source and method and apparatus for processing at least a surface of an article with plasma |
Country Status (8)
Country | Link |
---|---|
US (1) | US5669975A (zh) |
JP (1) | JP3653524B2 (zh) |
AU (1) | AU2058397A (zh) |
CH (1) | CH696036A5 (zh) |
DE (2) | DE19781667T1 (zh) |
GB (1) | GB2326974B (zh) |
TW (1) | TW340295B (zh) |
WO (1) | WO1997036022A1 (zh) |
Cited By (7)
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DE202009013283U1 (de) | 2009-10-02 | 2009-12-10 | JUN XIANG INDUSTRIAL SEWING MACHINE CO., LTD., Shunlin City | Verschiebbare Ableitvorrichtung für Fuseln |
DE202009013281U1 (de) | 2009-10-02 | 2009-12-10 | JUN XIANG INDUSTRIAL SEWING MACHINE CO., LTD., Shunlin City | Bewegliche Flusenableitvorrichtung mit Leitelementen |
TWI414618B (zh) * | 2005-08-26 | 2013-11-11 | 尼康股份有限公司 | A holding device, an assembling system, a sputtering device, and a processing method and a processing device |
US9029267B2 (en) | 2013-05-16 | 2015-05-12 | Lam Research Corporation | Controlling temperature of a faraday shield |
US9293353B2 (en) | 2011-04-28 | 2016-03-22 | Lam Research Corporation | Faraday shield having plasma density decoupling structure between TCP coil zones |
US9490106B2 (en) | 2011-04-28 | 2016-11-08 | Lam Research Corporation | Internal Faraday shield having distributed chevron patterns and correlated positioning relative to external inner and outer TCP coil |
US9885493B2 (en) | 2013-07-17 | 2018-02-06 | Lam Research Corporation | Air cooled faraday shield and methods for using the same |
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FR2748886B1 (fr) * | 1996-05-15 | 1998-08-21 | Automa Tech Sa | Dispositif de support de cliche pour installation d'exposition a la lumiere d'une piece plane |
US6170428B1 (en) * | 1996-07-15 | 2001-01-09 | Applied Materials, Inc. | Symmetric tunable inductively coupled HDP-CVD reactor |
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US6210539B1 (en) | 1997-05-14 | 2001-04-03 | Applied Materials, Inc. | Method and apparatus for producing a uniform density plasma above a substrate |
US6077402A (en) * | 1997-05-16 | 2000-06-20 | Applied Materials, Inc. | Central coil design for ionized metal plasma deposition |
US6361661B2 (en) | 1997-05-16 | 2002-03-26 | Applies Materials, Inc. | Hybrid coil design for ionized deposition |
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US6479785B1 (en) | 1998-07-09 | 2002-11-12 | Richard J. Fugo | Device for plasma incision of mater with a specifically tuned radiofrequencty electromagnetic field generator |
EP1028662A4 (en) * | 1997-10-24 | 2006-11-08 | Fugo Richard James | METHOD FOR THE PLASMA CUTTING OF MATERIALS BY MEANS OF SPECIFICALLY TUNED ELECTROMAGNETIC FIELD GENERATORS |
US5958266A (en) * | 1997-10-24 | 1999-09-28 | Fugo; Richard J. | Method of plasma incision of matter with a specifically tuned radiofrequency electromagnetic field generator |
JPH11135438A (ja) * | 1997-10-28 | 1999-05-21 | Nippon Asm Kk | 半導体プラズマ処理装置 |
US6506287B1 (en) | 1998-03-16 | 2003-01-14 | Applied Materials, Inc. | Overlap design of one-turn coil |
US6085688A (en) * | 1998-03-27 | 2000-07-11 | Applied Materials, Inc. | Method and apparatus for improving processing and reducing charge damage in an inductively coupled plasma reactor |
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DE19933841A1 (de) * | 1999-07-20 | 2001-02-01 | Bosch Gmbh Robert | Vorrichtung und Verfahren zum Ätzen eines Substrates mittels eines induktiv gekoppelten Plasmas |
US6320320B1 (en) | 1999-11-15 | 2001-11-20 | Lam Research Corporation | Method and apparatus for producing uniform process rates |
US6322661B1 (en) | 1999-11-15 | 2001-11-27 | Lam Research Corporation | Method and apparatus for controlling the volume of a plasma |
US6341574B1 (en) | 1999-11-15 | 2002-01-29 | Lam Research Corporation | Plasma processing systems |
CN1251293C (zh) * | 1999-11-15 | 2006-04-12 | 兰姆研究有限公司 | 用于加工系统的材料和气体化学组成 |
US7067034B2 (en) | 2000-03-27 | 2006-06-27 | Lam Research Corporation | Method and apparatus for plasma forming inner magnetic bucket to control a volume of a plasma |
US6446572B1 (en) | 2000-08-18 | 2002-09-10 | Tokyo Electron Limited | Embedded plasma source for plasma density improvement |
US6459066B1 (en) * | 2000-08-25 | 2002-10-01 | Board Of Regents, The University Of Texas System | Transmission line based inductively coupled plasma source with stable impedance |
US6494998B1 (en) | 2000-08-30 | 2002-12-17 | Tokyo Electron Limited | Process apparatus and method for improving plasma distribution and performance in an inductively coupled plasma using an internal inductive element |
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US6673199B1 (en) | 2001-03-07 | 2004-01-06 | Applied Materials, Inc. | Shaping a plasma with a magnetic field to control etch rate uniformity |
US20050186723A1 (en) * | 2001-06-21 | 2005-08-25 | Kim Hyoung J. | Methods and apparatuses for heat treatment of semiconductor films upon thermally susceptible non-conducting substrates |
EP1271620B1 (en) * | 2001-06-21 | 2013-05-29 | Hyoung June Kim | Method and apparatus for heat treatment of semiconductor films |
EP1421606A4 (en) * | 2001-08-06 | 2008-03-05 | Genitech Co Ltd | PLASMA ACTIVE ATOMIC LAYER (PEALD) DEPOSITION APPARATUS AND METHOD OF FORMING THIN FILM USING SAID APPARATUS |
US6820570B2 (en) * | 2001-08-15 | 2004-11-23 | Nobel Biocare Services Ag | Atomic layer deposition reactor |
KR100760291B1 (ko) * | 2001-11-08 | 2007-09-19 | 에이에스엠지니텍코리아 주식회사 | 박막 형성 방법 |
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US20030129117A1 (en) * | 2002-01-02 | 2003-07-10 | Mills Randell L. | Synthesis and characterization of a highly stable amorphous silicon hydride as the product of a catalytic hydrogen plasma reaction |
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US6875624B2 (en) * | 2002-05-08 | 2005-04-05 | Taiwan Semiconductor Manufacturing Co. Ltd. | Combined E-beam and optical exposure semiconductor lithography |
US20040142558A1 (en) * | 2002-12-05 | 2004-07-22 | Granneman Ernst H. A. | Apparatus and method for atomic layer deposition on substrates |
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DE102004002243A1 (de) * | 2003-02-07 | 2004-09-16 | Trikon Technologies Limited, Newport | Elektrostatische Klemmhalterung für dünne Wafer in einer Vakuumkammer zur Plasmabearbeitung |
US7537662B2 (en) * | 2003-04-29 | 2009-05-26 | Asm International N.V. | Method and apparatus for depositing thin films on a surface |
US7601223B2 (en) * | 2003-04-29 | 2009-10-13 | Asm International N.V. | Showerhead assembly and ALD methods |
US7188033B2 (en) * | 2003-07-21 | 2007-03-06 | Blacklight Power Incorporated | Method and system of computing and rendering the nature of the chemical bond of hydrogen-type molecules and molecular ions |
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AU2005204618A1 (en) * | 2004-01-05 | 2005-07-28 | Blacklight Power, Inc. | Method and system of computing and rendering the nature of atoms and atomic ions |
JP3616088B1 (ja) * | 2004-03-17 | 2005-02-02 | 独立行政法人科学技術振興機構 | マイクロプラズマジェット発生装置 |
US7689367B2 (en) * | 2004-05-17 | 2010-03-30 | Blacklight Power, Inc. | Method and system of computing and rendering the nature of the excited electronic states of atoms and atomic ions |
US7691243B2 (en) * | 2004-06-22 | 2010-04-06 | Tokyo Electron Limited | Internal antennae for plasma processing with metal plasma |
US20070198199A1 (en) * | 2004-07-19 | 2007-08-23 | Mills Randell L | Method and system of computing and rendering the nature of the chemical bond of hydrogen-type molecules and molecular ions |
US7138767B2 (en) * | 2004-09-30 | 2006-11-21 | Tokyo Electron Limited | Surface wave plasma processing system and method of using |
KR100599092B1 (ko) * | 2004-11-29 | 2006-07-12 | 삼성전자주식회사 | 구동 주파수 조절에 의한 전자기유도 가속장치 |
JP3984639B2 (ja) * | 2005-03-30 | 2007-10-03 | 松下電器産業株式会社 | 伝送線路 |
US7396415B2 (en) * | 2005-06-02 | 2008-07-08 | Asm America, Inc. | Apparatus and methods for isolating chemical vapor reactions at a substrate surface |
US20070264427A1 (en) * | 2005-12-21 | 2007-11-15 | Asm Japan K.K. | Thin film formation by atomic layer growth and chemical vapor deposition |
US20080304522A1 (en) * | 2006-04-04 | 2008-12-11 | Mills Randell L | Catalyst laser |
WO2008021321A2 (en) | 2006-08-17 | 2008-02-21 | Rjf Holdings Iv, Inc | Method and apparatus for plasma incision of cardiovascular tissue |
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US20080241387A1 (en) * | 2007-03-29 | 2008-10-02 | Asm International N.V. | Atomic layer deposition reactor |
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US7678715B2 (en) | 2007-12-21 | 2010-03-16 | Applied Materials, Inc. | Low wet etch rate silicon nitride film |
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US8383525B2 (en) | 2008-04-25 | 2013-02-26 | Asm America, Inc. | Plasma-enhanced deposition process for forming a metal oxide thin film and related structures |
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KR20140137172A (ko) * | 2013-05-22 | 2014-12-02 | 최대규 | 자기 관리 기능을 갖는 원격 플라즈마 시스템 및 이의 자기 관리 방법 |
CN111192812B (zh) * | 2020-01-07 | 2022-11-25 | 北京北方华创微电子装备有限公司 | 电感耦合装置和半导体处理设备 |
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-
1996
- 1996-03-27 US US08/624,010 patent/US5669975A/en not_active Expired - Lifetime
-
1997
- 1997-02-11 TW TW086101671A patent/TW340295B/zh not_active IP Right Cessation
- 1997-03-04 CH CH01975/98A patent/CH696036A5/de not_active IP Right Cessation
- 1997-03-04 AU AU20583/97A patent/AU2058397A/en not_active Abandoned
- 1997-03-04 DE DE19781667T patent/DE19781667T1/de active Pending
- 1997-03-04 GB GB9820829A patent/GB2326974B/en not_active Expired - Fee Related
- 1997-03-04 DE DE19781667A patent/DE19781667B4/de not_active Expired - Fee Related
- 1997-03-04 WO PCT/US1997/003048 patent/WO1997036022A1/en active IP Right Grant
- 1997-03-04 JP JP53439897A patent/JP3653524B2/ja not_active Expired - Fee Related
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI414618B (zh) * | 2005-08-26 | 2013-11-11 | 尼康股份有限公司 | A holding device, an assembling system, a sputtering device, and a processing method and a processing device |
DE202009013283U1 (de) | 2009-10-02 | 2009-12-10 | JUN XIANG INDUSTRIAL SEWING MACHINE CO., LTD., Shunlin City | Verschiebbare Ableitvorrichtung für Fuseln |
DE202009013281U1 (de) | 2009-10-02 | 2009-12-10 | JUN XIANG INDUSTRIAL SEWING MACHINE CO., LTD., Shunlin City | Bewegliche Flusenableitvorrichtung mit Leitelementen |
US9293353B2 (en) | 2011-04-28 | 2016-03-22 | Lam Research Corporation | Faraday shield having plasma density decoupling structure between TCP coil zones |
US9490106B2 (en) | 2011-04-28 | 2016-11-08 | Lam Research Corporation | Internal Faraday shield having distributed chevron patterns and correlated positioning relative to external inner and outer TCP coil |
US9029267B2 (en) | 2013-05-16 | 2015-05-12 | Lam Research Corporation | Controlling temperature of a faraday shield |
US9885493B2 (en) | 2013-07-17 | 2018-02-06 | Lam Research Corporation | Air cooled faraday shield and methods for using the same |
Also Published As
Publication number | Publication date |
---|---|
DE19781667T1 (de) | 1999-04-08 |
CH696036A5 (de) | 2006-11-30 |
DE19781667B4 (de) | 2007-07-05 |
GB2326974A (en) | 1999-01-06 |
GB9820829D0 (en) | 1998-11-18 |
WO1997036022A1 (en) | 1997-10-02 |
US5669975A (en) | 1997-09-23 |
JP3653524B2 (ja) | 2005-05-25 |
AU2058397A (en) | 1997-10-17 |
GB2326974B (en) | 2000-11-15 |
JP2001503554A (ja) | 2001-03-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |