TW340295B - Plasma source and method and apparatus for processing at least a surface of an article with plasma - Google Patents

Plasma source and method and apparatus for processing at least a surface of an article with plasma

Info

Publication number
TW340295B
TW340295B TW086101671A TW86101671A TW340295B TW 340295 B TW340295 B TW 340295B TW 086101671 A TW086101671 A TW 086101671A TW 86101671 A TW86101671 A TW 86101671A TW 340295 B TW340295 B TW 340295B
Authority
TW
Taiwan
Prior art keywords
processing
plasma
article
room
dielectric plate
Prior art date
Application number
TW086101671A
Other languages
English (en)
Inventor
Kaihan Abidi Ashtiani
Original Assignee
Materials Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Materials Research Corp filed Critical Materials Research Corp
Application granted granted Critical
Publication of TW340295B publication Critical patent/TW340295B/zh

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/507Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/321Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3266Magnetic control means
    • H01J37/32688Multi-cusp fields

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
TW086101671A 1996-03-27 1997-02-11 Plasma source and method and apparatus for processing at least a surface of an article with plasma TW340295B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/624,010 US5669975A (en) 1996-03-27 1996-03-27 Plasma producing method and apparatus including an inductively-coupled plasma source

Publications (1)

Publication Number Publication Date
TW340295B true TW340295B (en) 1998-09-11

Family

ID=24500251

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086101671A TW340295B (en) 1996-03-27 1997-02-11 Plasma source and method and apparatus for processing at least a surface of an article with plasma

Country Status (8)

Country Link
US (1) US5669975A (zh)
JP (1) JP3653524B2 (zh)
AU (1) AU2058397A (zh)
CH (1) CH696036A5 (zh)
DE (2) DE19781667T1 (zh)
GB (1) GB2326974B (zh)
TW (1) TW340295B (zh)
WO (1) WO1997036022A1 (zh)

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DE202009013283U1 (de) 2009-10-02 2009-12-10 JUN XIANG INDUSTRIAL SEWING MACHINE CO., LTD., Shunlin City Verschiebbare Ableitvorrichtung für Fuseln
DE202009013281U1 (de) 2009-10-02 2009-12-10 JUN XIANG INDUSTRIAL SEWING MACHINE CO., LTD., Shunlin City Bewegliche Flusenableitvorrichtung mit Leitelementen
TWI414618B (zh) * 2005-08-26 2013-11-11 尼康股份有限公司 A holding device, an assembling system, a sputtering device, and a processing method and a processing device
US9029267B2 (en) 2013-05-16 2015-05-12 Lam Research Corporation Controlling temperature of a faraday shield
US9293353B2 (en) 2011-04-28 2016-03-22 Lam Research Corporation Faraday shield having plasma density decoupling structure between TCP coil zones
US9490106B2 (en) 2011-04-28 2016-11-08 Lam Research Corporation Internal Faraday shield having distributed chevron patterns and correlated positioning relative to external inner and outer TCP coil
US9885493B2 (en) 2013-07-17 2018-02-06 Lam Research Corporation Air cooled faraday shield and methods for using the same

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI414618B (zh) * 2005-08-26 2013-11-11 尼康股份有限公司 A holding device, an assembling system, a sputtering device, and a processing method and a processing device
DE202009013283U1 (de) 2009-10-02 2009-12-10 JUN XIANG INDUSTRIAL SEWING MACHINE CO., LTD., Shunlin City Verschiebbare Ableitvorrichtung für Fuseln
DE202009013281U1 (de) 2009-10-02 2009-12-10 JUN XIANG INDUSTRIAL SEWING MACHINE CO., LTD., Shunlin City Bewegliche Flusenableitvorrichtung mit Leitelementen
US9293353B2 (en) 2011-04-28 2016-03-22 Lam Research Corporation Faraday shield having plasma density decoupling structure between TCP coil zones
US9490106B2 (en) 2011-04-28 2016-11-08 Lam Research Corporation Internal Faraday shield having distributed chevron patterns and correlated positioning relative to external inner and outer TCP coil
US9029267B2 (en) 2013-05-16 2015-05-12 Lam Research Corporation Controlling temperature of a faraday shield
US9885493B2 (en) 2013-07-17 2018-02-06 Lam Research Corporation Air cooled faraday shield and methods for using the same

Also Published As

Publication number Publication date
DE19781667T1 (de) 1999-04-08
CH696036A5 (de) 2006-11-30
DE19781667B4 (de) 2007-07-05
GB2326974A (en) 1999-01-06
GB9820829D0 (en) 1998-11-18
WO1997036022A1 (en) 1997-10-02
US5669975A (en) 1997-09-23
JP3653524B2 (ja) 2005-05-25
AU2058397A (en) 1997-10-17
GB2326974B (en) 2000-11-15
JP2001503554A (ja) 2001-03-13

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