GB2398166B - Electrostatic clamping of thin wafers in plasma processing vacuum chamber - Google Patents

Electrostatic clamping of thin wafers in plasma processing vacuum chamber

Info

Publication number
GB2398166B
GB2398166B GB0400228A GB0400228A GB2398166B GB 2398166 B GB2398166 B GB 2398166B GB 0400228 A GB0400228 A GB 0400228A GB 0400228 A GB0400228 A GB 0400228A GB 2398166 B GB2398166 B GB 2398166B
Authority
GB
United Kingdom
Prior art keywords
vacuum chamber
plasma processing
electrostatic clamping
thin wafers
processing vacuum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
GB0400228A
Other versions
GB2398166A (en
GB0400228D0 (en
Inventor
Paul Rich
Clive Luca Widdicks
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Trikon Technologies Ltd
Original Assignee
Trikon Technologies Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Trikon Technologies Ltd filed Critical Trikon Technologies Ltd
Publication of GB0400228D0 publication Critical patent/GB0400228D0/en
Publication of GB2398166A publication Critical patent/GB2398166A/en
Application granted granted Critical
Publication of GB2398166B publication Critical patent/GB2398166B/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
GB0400228A 2003-02-07 2004-01-07 Electrostatic clamping of thin wafers in plasma processing vacuum chamber Expired - Lifetime GB2398166B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US44544903P 2003-02-07 2003-02-07

Publications (3)

Publication Number Publication Date
GB0400228D0 GB0400228D0 (en) 2004-02-11
GB2398166A GB2398166A (en) 2004-08-11
GB2398166B true GB2398166B (en) 2007-03-28

Family

ID=31716044

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0400228A Expired - Lifetime GB2398166B (en) 2003-02-07 2004-01-07 Electrostatic clamping of thin wafers in plasma processing vacuum chamber

Country Status (1)

Country Link
GB (1) GB2398166B (en)

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5203981A (en) * 1991-06-05 1993-04-20 Mitsubishi Denki Kabushiki Kaisha Vacuum-treatment apparatus
EP0708478A1 (en) * 1994-10-18 1996-04-24 Applied Materials, Inc. Plasma guard for use in a vacuum process chamber
US5539609A (en) * 1992-12-02 1996-07-23 Applied Materials, Inc. Electrostatic chuck usable in high density plasma
US5669975A (en) * 1996-03-27 1997-09-23 Sony Corporation Plasma producing method and apparatus including an inductively-coupled plasma source
US5779803A (en) * 1993-12-24 1998-07-14 Tokyo Electron Limited Plasma processing apparatus
US6051122A (en) * 1997-08-21 2000-04-18 Applied Materials, Inc. Deposition shield assembly for a semiconductor wafer processing system
US6149730A (en) * 1997-10-08 2000-11-21 Nec Corporation Apparatus for forming films of a semiconductor device, a method of manufacturing a semiconductor device, and a method of forming thin films of a semiconductor
GB2350374A (en) * 1999-05-11 2000-11-29 Trikon Holdings Ltd Deposition apparatus
JP2001308077A (en) * 2000-04-27 2001-11-02 Toshiba Corp Semiconductor device manufacturing apparatus
US6340639B1 (en) * 1999-10-26 2002-01-22 Matsushita Electric Industrial Co., Ltd. Plasma process apparatus and plasma process method for substrate

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5203981A (en) * 1991-06-05 1993-04-20 Mitsubishi Denki Kabushiki Kaisha Vacuum-treatment apparatus
US5539609A (en) * 1992-12-02 1996-07-23 Applied Materials, Inc. Electrostatic chuck usable in high density plasma
US5779803A (en) * 1993-12-24 1998-07-14 Tokyo Electron Limited Plasma processing apparatus
EP0708478A1 (en) * 1994-10-18 1996-04-24 Applied Materials, Inc. Plasma guard for use in a vacuum process chamber
US5669975A (en) * 1996-03-27 1997-09-23 Sony Corporation Plasma producing method and apparatus including an inductively-coupled plasma source
US6051122A (en) * 1997-08-21 2000-04-18 Applied Materials, Inc. Deposition shield assembly for a semiconductor wafer processing system
US6149730A (en) * 1997-10-08 2000-11-21 Nec Corporation Apparatus for forming films of a semiconductor device, a method of manufacturing a semiconductor device, and a method of forming thin films of a semiconductor
GB2350374A (en) * 1999-05-11 2000-11-29 Trikon Holdings Ltd Deposition apparatus
US6340639B1 (en) * 1999-10-26 2002-01-22 Matsushita Electric Industrial Co., Ltd. Plasma process apparatus and plasma process method for substrate
JP2001308077A (en) * 2000-04-27 2001-11-02 Toshiba Corp Semiconductor device manufacturing apparatus

Also Published As

Publication number Publication date
GB2398166A (en) 2004-08-11
GB0400228D0 (en) 2004-02-11

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)

Free format text: REGISTERED BETWEEN 20150716 AND 20150722

PE20 Patent expired after termination of 20 years

Expiry date: 20240106