GB1358647A - Apparatus for reacting a gas with a material in an electromagnetic field - Google Patents

Apparatus for reacting a gas with a material in an electromagnetic field

Info

Publication number
GB1358647A
GB1358647A GB4189072A GB4189072A GB1358647A GB 1358647 A GB1358647 A GB 1358647A GB 4189072 A GB4189072 A GB 4189072A GB 4189072 A GB4189072 A GB 4189072A GB 1358647 A GB1358647 A GB 1358647A
Authority
GB
United Kingdom
Prior art keywords
gas
electromagnetic field
reacting
coils
generator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4189072A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LFE Corp
Original Assignee
LFE Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LFE Corp filed Critical LFE Corp
Publication of GB1358647A publication Critical patent/GB1358647A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/087—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • General Health & Medical Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

1358647 Discharge treatment/arc discharge apparatus LFE CORP 8 Sept 1972 [5 Oct 1971] 41890/72 Heading H5H An apparatus for reacting a gas with a material in a chamber 1 in the influence of an electromagnetic field, has a composite coil 22 comprising oppositely wound coils 26, 24 connected via an impedance matching network 40 to a R.F. generator 34. The gas is introduced via line 8 through holes 18 in supply pipes 16 connected to manifold 4 and is ionized to produce a plasma by the electromagnetic field. The apparatus may be used to etch away exposed portions of a silicon dioxide layer on semi-conductor slices which are inserted into the material processing zone. A removable end cap 20 is provided for access. The coils 26, 24 may have equal numbers of turns. The generator provides power in the order of a few hundred watts continuous radiation at approx. 13À5 MHz.
GB4189072A 1971-10-05 1972-09-08 Apparatus for reacting a gas with a material in an electromagnetic field Expired GB1358647A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US18673971A 1971-10-05 1971-10-05

Publications (1)

Publication Number Publication Date
GB1358647A true GB1358647A (en) 1974-07-03

Family

ID=22686104

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4189072A Expired GB1358647A (en) 1971-10-05 1972-09-08 Apparatus for reacting a gas with a material in an electromagnetic field

Country Status (7)

Country Link
US (1) US3705091A (en)
JP (1) JPS4844176A (en)
BE (1) BE788661A (en)
CA (1) CA978140A (en)
DE (1) DE2245753A1 (en)
FR (1) FR2156582A1 (en)
GB (1) GB1358647A (en)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50267U (en) * 1973-04-27 1975-01-06
US4362632A (en) * 1974-08-02 1982-12-07 Lfe Corporation Gas discharge apparatus
US4431898A (en) * 1981-09-01 1984-02-14 The Perkin-Elmer Corporation Inductively coupled discharge for plasma etching and resist stripping
DE3632340C2 (en) * 1986-09-24 1998-01-15 Leybold Ag Inductively excited ion source
US5280154A (en) * 1992-01-30 1994-01-18 International Business Machines Corporation Radio frequency induction plasma processing system utilizing a uniform field coil
US5277751A (en) * 1992-06-18 1994-01-11 Ogle John S Method and apparatus for producing low pressure planar plasma using a coil with its axis parallel to the surface of a coupling window
US5433812A (en) * 1993-01-19 1995-07-18 International Business Machines Corporation Apparatus for enhanced inductive coupling to plasmas with reduced sputter contamination
JP3105403B2 (en) * 1994-09-14 2000-10-30 松下電器産業株式会社 Plasma processing equipment
US6238533B1 (en) 1995-08-07 2001-05-29 Applied Materials, Inc. Integrated PVD system for aluminum hole filling using ionized metal adhesion layer
US5962923A (en) 1995-08-07 1999-10-05 Applied Materials, Inc. Semiconductor device having a low thermal budget metal filling and planarization of contacts, vias and trenches
US7253109B2 (en) 1997-11-26 2007-08-07 Applied Materials, Inc. Method of depositing a tantalum nitride/tantalum diffusion barrier layer system
EP1034566A1 (en) 1997-11-26 2000-09-13 Applied Materials, Inc. Damage-free sculptured coating deposition
US6217937B1 (en) 1998-07-15 2001-04-17 Cornell Research Foundation, Inc. High throughput OMVPE apparatus
US6239553B1 (en) * 1999-04-22 2001-05-29 Applied Materials, Inc. RF plasma source for material processing
US8454810B2 (en) 2006-07-14 2013-06-04 4D-S Pty Ltd. Dual hexagonal shaped plasma source
KR101874802B1 (en) * 2016-04-19 2018-07-05 피에스케이 주식회사 Plasma source and apparatus for treating substrate including the same
WO2022250145A1 (en) * 2021-05-27 2022-12-01 旭化成株式会社 Plasma generation device, plasma treatment device, and plasma etching device for seamless roller mold

Also Published As

Publication number Publication date
JPS4844176A (en) 1973-06-25
US3705091A (en) 1972-12-05
CA978140A (en) 1975-11-18
FR2156582A1 (en) 1973-06-01
BE788661A (en) 1973-03-12
DE2245753A1 (en) 1973-04-12

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees