US3705091A - Gas discharge apparatus - Google Patents
Gas discharge apparatus Download PDFInfo
- Publication number
- US3705091A US3705091A US186739A US3705091DA US3705091A US 3705091 A US3705091 A US 3705091A US 186739 A US186739 A US 186739A US 3705091D A US3705091D A US 3705091DA US 3705091 A US3705091 A US 3705091A
- Authority
- US
- United States
- Prior art keywords
- chamber
- gas
- coil
- composite coil
- gas discharge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J19/087—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
Definitions
- the activated gas reacts with material introduced into the chamber and is thereafter withdrawn, along with inactive gas and resultant gaseous by products, from the system.
- the construction of the chamber and the composite coil are such as to provide a substantially uniform distribution of gaseous excited species throughout the material-handling volume of the chamber.
- This invention relates to gas discharge apparatus and, more particularly, it is concerned with an improved means for producing an electromagnetic field facilitating eflicient and uniform conversions during heterogeneous (gas-solid) reactions.
- Gas reaction systems of the type described above are being used to great advantage in a variety of industrial processes including, for example, the process of manufacturing integrated circuit components from semiconductor substrates. Such systems provide an economical, safe,
- the general object of the present invention is to provide improved apparatus of the aforementioned character, whereby uniform heterogeneous reactions are accomplished throughout the material-handling zone of a reaction chamber.
- a gas discharge apparatus having a composite coil which surrounds the material-handling zone of a reaction chamber.
- the composite coil consists of two coil sections ice whose respective coil turns are wound in opposite directlons.
- a suitable RF energy source is coupled to the compos1te coil by means of an impedance matching network.
- the drawing is an illustration in diagrammatic form of a gas discharge system constructed in accordance with the principles of the present invention.
- reference numeral 1 designates a reaction chamber having an input manifold 2 whose outlets are coupled to four gas inlet ports 4 which are symmetrically disposed about the circumference of the chamber.
- a container 6 of molecular gas is coupled to the inlet of manifold 2 by way of a feedline 8 having inserted therein a pressure regulator valve 10 and an adjustable flow meter 12 for monitoring gaseous flow rates throughout the system. Gas is exhausted from the chamber via the gas outlet port 14.
- reaction chamber 1 A portion of the reaction chamber 1 is shown broken away in the drawing to better illustrate one of the four gas diffusion tubes 16 which are fused to the gas inlet ports 4 and are symmetrically disposed along the inner wall of the chamber.
- Each of the tubes 16 has a plurality of holes 18 along its length which uniformly distribute the nonactivated gas within the chamber.
- Chamber 1 has an opening at one end for material to be inserted into or removed from its material-handling zone.
- This material may, for example, consist of a tray of semiconductor slices from which it is desired to etch away exposed portions of a silicon dioxide layer.
- the chambers opening is provided with a closure in the form of a caplike cover 20 which is fitted tightly over the opening after the material is inserted.
- the composite coil 22 Surrounding the material-handling zone of the chamber 1 is a composite coil assembly 22 which is adapted to couple an electromagnetic field to the gas within the chamber.
- the composite coil 22 is a multiturn coil having a section 24 in which the coil turns are wound in a counterclockwise direction, as observed from the front of the chamber, and a section 26 in which the coil turns are wound in a clockwise direction as observed from the front of the chamber.
- the coil sections 24 and 26 meet at a common junction 28 and have free end terminals 30 and 32, respectively.
- An RF generator 34 has one output lead 36 connected to the input terminal 38 of an impedance matching network 40, and its other output lead connected to a ground reference terminal.
- the matching network 40 includes a variable capacitor 42 connected between its input terminal 38 and ground, a variable inductor 44 connected between its input terminal 38 and its output terminal 46, and a variable capacitor 48 connected between its output terminal 46 and the common ground.
- the junction 28 of the composite coil is connected to the input terminal 38 of the impedance matching network, while the end terminals 30 and 32 of the composite coil are each connected to the output terminal 46 of the impedance matching network.
- the outlet port 14 of the reaction chamber 1 is connected to a vacuum gauge 50, which continually measures the pressure maintained within the chamber, and also to a mechanical vacuum pump (not shown) by way of exhaust line 52.
- the material to be plasma-treated is introduced into the material-handling zone of chamber 1 and the system is initially pumped down to a preset low-pressure level.
- the gas is then automatically admitted to the chamber via the diffusion tubes 16, and the RF generator 34 is then enabled to deliver its energy.
- the coupling of RF energy into the gas is achieved by means of the matching network 40 and the composite coil 22 that surrounds the material-handling zone of the chamber.
- the power provided by generator 34 is preferably in the order of a few hundred watts continuous radiation at a frequency of approximately 13.5 mHz.
- the unique construction of the composite coil 22 is such that the electric fields produced by its coil sections 24 and 26 tend to produce a weak re sultant electric field, whereas the associated magnetic fields tend to produce a reinforced resultant magnetic field.
- the excited species produced by the electromagnetic breakdown of the gas are uniformly distributed throughout the material-handling zone of the chamber and etching reactions occur more uniformly across the large axis of reaction 1.
- reaction chamber adapted to contain said gas and said material
- said composite coil having two joined coil sections whose respective coil turns are wound in opposite directions
- reaction chamber has a generally cylindrical shape, a closure means at one end of said chamber to enable vacuum-tight operation, means for introducing a gas within said chamher, and means for with drawing the gas from said chamber.
- an impedance matching network having an input, an
Landscapes
- Chemical & Material Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Plasma & Fusion (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Toxicology (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Plasma Technology (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
Abstract
Description
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US18673971A | 1971-10-05 | 1971-10-05 |
Publications (1)
Publication Number | Publication Date |
---|---|
US3705091A true US3705091A (en) | 1972-12-05 |
Family
ID=22686104
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US186739A Expired - Lifetime US3705091A (en) | 1971-10-05 | 1971-10-05 | Gas discharge apparatus |
Country Status (7)
Country | Link |
---|---|
US (1) | US3705091A (en) |
JP (1) | JPS4844176A (en) |
BE (1) | BE788661A (en) |
CA (1) | CA978140A (en) |
DE (1) | DE2245753A1 (en) |
FR (1) | FR2156582A1 (en) |
GB (1) | GB1358647A (en) |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3904529A (en) * | 1973-04-27 | 1975-09-09 | Lfe Corp | Gas discharge apparatus |
US4362632A (en) * | 1974-08-02 | 1982-12-07 | Lfe Corporation | Gas discharge apparatus |
EP0073963A2 (en) * | 1981-09-01 | 1983-03-16 | The Perkin-Elmer Corporation | Inductively coupled discharge for plasma etching and resist stripping |
DE3632340A1 (en) * | 1986-09-24 | 1988-03-31 | Leybold Heraeus Gmbh & Co Kg | INDUCTIVELY EXCITED ION SOURCE |
US5277751A (en) * | 1992-06-18 | 1994-01-11 | Ogle John S | Method and apparatus for producing low pressure planar plasma using a coil with its axis parallel to the surface of a coupling window |
US5280154A (en) * | 1992-01-30 | 1994-01-18 | International Business Machines Corporation | Radio frequency induction plasma processing system utilizing a uniform field coil |
US5433812A (en) * | 1993-01-19 | 1995-07-18 | International Business Machines Corporation | Apparatus for enhanced inductive coupling to plasmas with reduced sputter contamination |
US5558722A (en) * | 1994-09-14 | 1996-09-24 | Matsushita Electric Industrial Co., Ltd. | Plasma processing apparatus |
US5962923A (en) * | 1995-08-07 | 1999-10-05 | Applied Materials, Inc. | Semiconductor device having a low thermal budget metal filling and planarization of contacts, vias and trenches |
US6045666A (en) * | 1995-08-07 | 2000-04-04 | Applied Materials, Inc. | Aluminum hole filling method using ionized metal adhesion layer |
US6217937B1 (en) | 1998-07-15 | 2001-04-17 | Cornell Research Foundation, Inc. | High throughput OMVPE apparatus |
US6239553B1 (en) * | 1999-04-22 | 2001-05-29 | Applied Materials, Inc. | RF plasma source for material processing |
US20050020080A1 (en) * | 1997-11-26 | 2005-01-27 | Tony Chiang | Method of depositing a diffusion barrier layer and a metal conductive layer |
US7253109B2 (en) | 1997-11-26 | 2007-08-07 | Applied Materials, Inc. | Method of depositing a tantalum nitride/tantalum diffusion barrier layer system |
US8454810B2 (en) | 2006-07-14 | 2013-06-04 | 4D-S Pty Ltd. | Dual hexagonal shaped plasma source |
US20170301514A1 (en) * | 2016-04-19 | 2017-10-19 | Psk Inc. | Plasma source and substrate treating apparatus including the same |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP4351281A1 (en) * | 2021-05-27 | 2024-04-10 | Asahi Kasei Kabushiki Kaisha | Plasma generation device, plasma treatment device, and plasma etching device for seamless roller mold |
-
0
- BE BE788661D patent/BE788661A/en unknown
-
1971
- 1971-10-05 US US186739A patent/US3705091A/en not_active Expired - Lifetime
-
1972
- 1972-07-20 JP JP47073000A patent/JPS4844176A/ja active Pending
- 1972-09-06 CA CA151,067A patent/CA978140A/en not_active Expired
- 1972-09-07 FR FR7231705A patent/FR2156582A1/fr not_active Withdrawn
- 1972-09-08 GB GB4189072A patent/GB1358647A/en not_active Expired
- 1972-09-18 DE DE2245753A patent/DE2245753A1/en active Pending
Cited By (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3904529A (en) * | 1973-04-27 | 1975-09-09 | Lfe Corp | Gas discharge apparatus |
US4362632A (en) * | 1974-08-02 | 1982-12-07 | Lfe Corporation | Gas discharge apparatus |
EP0073963A2 (en) * | 1981-09-01 | 1983-03-16 | The Perkin-Elmer Corporation | Inductively coupled discharge for plasma etching and resist stripping |
EP0073963A3 (en) * | 1981-09-01 | 1984-10-17 | The Perkin-Elmer Corporation | Inductively coupled discharge for plasma etching and resist stripping |
DE3632340A1 (en) * | 1986-09-24 | 1988-03-31 | Leybold Heraeus Gmbh & Co Kg | INDUCTIVELY EXCITED ION SOURCE |
DE3632340C2 (en) * | 1986-09-24 | 1998-01-15 | Leybold Ag | Inductively excited ion source |
US5280154A (en) * | 1992-01-30 | 1994-01-18 | International Business Machines Corporation | Radio frequency induction plasma processing system utilizing a uniform field coil |
US5277751A (en) * | 1992-06-18 | 1994-01-11 | Ogle John S | Method and apparatus for producing low pressure planar plasma using a coil with its axis parallel to the surface of a coupling window |
US5433812A (en) * | 1993-01-19 | 1995-07-18 | International Business Machines Corporation | Apparatus for enhanced inductive coupling to plasmas with reduced sputter contamination |
US5622635A (en) * | 1993-01-19 | 1997-04-22 | International Business Machines Corporation | Method for enhanced inductive coupling to plasmas with reduced sputter contamination |
US5558722A (en) * | 1994-09-14 | 1996-09-24 | Matsushita Electric Industrial Co., Ltd. | Plasma processing apparatus |
US5711850A (en) * | 1994-09-14 | 1998-01-27 | Matsuhita Electric Industrial Co., Ltd. | Plasma processing apparatus |
US6136095A (en) * | 1995-08-07 | 2000-10-24 | Applied Materials, Inc. | Apparatus for filling apertures in a film layer on a semiconductor substrate |
US6313027B1 (en) | 1995-08-07 | 2001-11-06 | Applied Materials, Inc. | Method for low thermal budget metal filling and planarization of contacts vias and trenches |
US5962923A (en) * | 1995-08-07 | 1999-10-05 | Applied Materials, Inc. | Semiconductor device having a low thermal budget metal filling and planarization of contacts, vias and trenches |
US6217721B1 (en) | 1995-08-07 | 2001-04-17 | Applied Materials, Inc. | Filling narrow apertures and forming interconnects with a metal utilizing a crystallographically oriented liner layer |
US6045666A (en) * | 1995-08-07 | 2000-04-04 | Applied Materials, Inc. | Aluminum hole filling method using ionized metal adhesion layer |
US6238533B1 (en) | 1995-08-07 | 2001-05-29 | Applied Materials, Inc. | Integrated PVD system for aluminum hole filling using ionized metal adhesion layer |
US20050020080A1 (en) * | 1997-11-26 | 2005-01-27 | Tony Chiang | Method of depositing a diffusion barrier layer and a metal conductive layer |
US20050085068A1 (en) * | 1997-11-26 | 2005-04-21 | Tony Chiang | Method of depositing a metal seed layer on semiconductor substrates |
US7074714B2 (en) | 1997-11-26 | 2006-07-11 | Applied Materials, Inc. | Method of depositing a metal seed layer on semiconductor substrates |
US20070020922A1 (en) * | 1997-11-26 | 2007-01-25 | Tony Chiang | Method of depositing a metal seed layer on semiconductor substrates |
US7253109B2 (en) | 1997-11-26 | 2007-08-07 | Applied Materials, Inc. | Method of depositing a tantalum nitride/tantalum diffusion barrier layer system |
US7381639B2 (en) | 1997-11-26 | 2008-06-03 | Applied Materials, Inc. | Method of depositing a metal seed layer on semiconductor substrates |
US7687909B2 (en) | 1997-11-26 | 2010-03-30 | Applied Materials, Inc. | Metal / metal nitride barrier layer for semiconductor device applications |
US9390970B2 (en) | 1997-11-26 | 2016-07-12 | Applied Materials, Inc. | Method for depositing a diffusion barrier layer and a metal conductive layer |
US6332928B2 (en) | 1998-07-15 | 2001-12-25 | Cornell Research Foundation, Inc. | High throughput OMPVE apparatus |
US6217937B1 (en) | 1998-07-15 | 2001-04-17 | Cornell Research Foundation, Inc. | High throughput OMVPE apparatus |
US6239553B1 (en) * | 1999-04-22 | 2001-05-29 | Applied Materials, Inc. | RF plasma source for material processing |
US8454810B2 (en) | 2006-07-14 | 2013-06-04 | 4D-S Pty Ltd. | Dual hexagonal shaped plasma source |
US20170301514A1 (en) * | 2016-04-19 | 2017-10-19 | Psk Inc. | Plasma source and substrate treating apparatus including the same |
Also Published As
Publication number | Publication date |
---|---|
GB1358647A (en) | 1974-07-03 |
BE788661A (en) | 1973-03-12 |
CA978140A (en) | 1975-11-18 |
JPS4844176A (en) | 1973-06-25 |
DE2245753A1 (en) | 1973-04-12 |
FR2156582A1 (en) | 1973-06-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: MARINE MIDLAND BANK, N.A., ONE MIDLAND CENTER, BUF Free format text: SECURITY INTEREST;ASSIGNOR:LFE CORPORATION, A CORP. OF DE.;REEL/FRAME:004526/0096 Effective date: 19860214 |
|
AS | Assignment |
Owner name: MARINE MIDLAND BANK, N.A.,NEW YORK Free format text: SECURITY INTEREST;ASSIGNOR:LFE CORPORATION, A CORP. OF DE.;REEL/FRAME:004804/0379 Effective date: 19870416 Owner name: MARINE MIDLAND BANK, N.A., ONE MARINE MIDLAND CENT Free format text: SECURITY INTEREST;ASSIGNOR:LFE CORPORATION, A CORP. OF DE.;REEL/FRAME:004804/0379 Effective date: 19870416 |
|
AS | Assignment |
Owner name: MARK IV INDUSTRIES, INC., Free format text: ASSIGNMENT OF ASSIGNORS INTEREST.;ASSIGNOR:AUDUBORN HOLDINGS INC., A DE. CORP.;REEL/FRAME:005020/0118 Effective date: 19871231 Owner name: MARK IV INDUSTRIES INC. Free format text: ASSIGNMENT OF ASSIGNORS INTEREST.;ASSIGNOR:AUDUBON ENTERPRISES INC.;REEL/FRAME:005020/0091 Effective date: 19871231 Owner name: PARKWAY INDUSTRIES INC. Free format text: ASSIGNS TO EACH ASSIGNEE THE AMOUNT SPECIFIED BY THEIR RESPECTIVE NAMES.;ASSIGNOR:CONRAC CORPORATION;REEL/FRAME:005020/0035 Effective date: 19871231 Owner name: CODE-A-PHONE CORPORATION Free format text: MERGER;ASSIGNOR:LFE CORPORATION, (MERGED INTO);REEL/FRAME:005020/0027 Effective date: 19870930 Owner name: MARK IV INDUSTRIES, INC. Free format text: ASSIGNMENT OF ASSIGNORS INTEREST.;ASSIGNOR:MARK IV VENTURES INC.;REEL/FRAME:005020/0082 Effective date: 19871231 Owner name: MARK IV INDUSTRIES, INC. Free format text: ASSIGNMENT OF ASSIGNORS INTEREST.;ASSIGNOR:PARKWAY HOLDINGS INC.;REEL/FRAME:005044/0710 Effective date: 19871231 Owner name: MARK IV HOLDINGS INC. Free format text: ASSIGNS TO EACH ASSIGNEE THE AMOUNT SPECIFIED BY THEIR RESPECTIVE NAMES.;ASSIGNOR:CONRAC CORPORATION;REEL/FRAME:005020/0035 Effective date: 19871231 Owner name: MARK IV INDUSTRIES, INC. Free format text: ASSIGNMENT OF ASSIGNORS INTEREST.;ASSIGNOR:AUDUBON INDUSTRIES, INC.;REEL/FRAME:005020/0100 Effective date: 19881231 Owner name: MARK IV VENTURES INC. Free format text: ASSIGNS TO EACH ASSIGNEE THE AMOUNT SPECIFIED BY THEIR RESPECTIVE NAMES.;ASSIGNOR:CONRAC CORPORATION;REEL/FRAME:005020/0035 Effective date: 19871231 Owner name: MARK IV INDUSTRIES, INC. Free format text: ASSIGNMENT OF ASSIGNORS INTEREST.;ASSIGNOR:PARKWAY ENTERPRISES INC.;REEL/FRAME:005020/0046 Effective date: 19871231 Owner name: MARK IV INDUSTRIES, INC. Free format text: ASSIGNMENT OF ASSIGNORS INTEREST.;ASSIGNOR:AUDUBON VENTURES INC.;REEL/FRAME:005020/0055 Effective date: 19871231 Owner name: MARK IV INDUSTRIES, INC. Free format text: ASSIGNMENT OF ASSIGNORS INTEREST.;ASSIGNOR:PARKWAY INDUSTRIES INC.;REEL/FRAME:005020/0064 Effective date: 19871231 Owner name: PARKWAY ENTERPRISES INC. Free format text: ASSIGNS TO EACH ASSIGNEE THE AMOUNT SPECIFIED BY THEIR RESPECTIVE NAMES.;ASSIGNOR:CONRAC CORPORATION;REEL/FRAME:005020/0035 Effective date: 19871231 Owner name: PARKWAY VENTURES INC. Free format text: ASSIGNS TO EACH ASSIGNEE THE AMOUNT SPECIFIED BY THEIR RESPECTIVE NAMES.;ASSIGNOR:CONRAC CORPORATION;REEL/FRAME:005020/0035 Effective date: 19871231 Owner name: MARK IV INDUSTRIES, INC. Free format text: ASSIGNMENT OF ASSIGNORS INTEREST.;ASSIGNOR:MARK IV HOLDINGS INC.;REEL/FRAME:005020/0073 Effective date: 19871231 Owner name: AUDUBON VENTURES INC. Free format text: ASSIGNS TO EACH ASSIGNEE THE AMOUNT SPECIFIED BY THEIR RESPECTIVE NAMES.;ASSIGNOR:CONRAC CORPORATION;REEL/FRAME:005020/0035 Effective date: 19871231 Owner name: PARKWAY HOLDINGS INC. Free format text: ASSIGNS TO EACH ASSIGNEE THE AMOUNT SPECIFIED BY THEIR RESPECTIVE NAMES.;ASSIGNOR:CONRAC CORPORATION;REEL/FRAME:005020/0035 Effective date: 19871231 Owner name: MARK IV INDUSTRIES, INC. Free format text: ASSIGNMENT OF ASSIGNORS INTEREST.;ASSIGNOR:PARKWAY VENTURES INC.;REEL/FRAME:005020/0109 Effective date: 19871231 Owner name: AUDUBON HOLDINGS INC. Free format text: ASSIGNS TO EACH ASSIGNEE THE AMOUNT SPECIFIED BY THEIR RESPECTIVE NAMES.;ASSIGNOR:CONRAC CORPORATION;REEL/FRAME:005020/0035 Effective date: 19871231 Owner name: AUDUBON ENTERPRISES INC. Free format text: ASSIGNS TO EACH ASSIGNEE THE AMOUNT SPECIFIED BY THEIR RESPECTIVE NAMES.;ASSIGNOR:CONRAC CORPORATION;REEL/FRAME:005020/0035 Effective date: 19871231 Owner name: AUDUBON INDUSTRIES INC. Free format text: ASSIGNS TO EACH ASSIGNEE THE AMOUNT SPECIFIED BY THEIR RESPECTIVE NAMES.;ASSIGNOR:CONRAC CORPORATION;REEL/FRAME:005020/0035 Effective date: 19871231 |
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AS | Assignment |
Owner name: LFE CORPORATION Free format text: RELEASED BY SECURED PARTY;ASSIGNOR:MARINE MIDLAND BANK, N.A.;REEL/FRAME:005041/0045 Effective date: 19880223 |
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STCF | Information on status: patent grant |
Free format text: PATENTED FILE - (OLD CASE ADDED FOR FILE TRACKING PURPOSES) |
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AS | Assignment |
Owner name: CONRAC CORPORATION (80%) Free format text: ASSIGNS TO EACH ASSIGNEE THE PERCENTAGES OPPOSITE THEIR RESPECTIVE NAME;ASSIGNOR:CODE-A-PHONE CORPORATION, A CORP. DE;REEL/FRAME:005136/0610 Effective date: 19871231 Owner name: MARK IV INDUSTRIES, INC., (20%) Free format text: ASSIGNS TO EACH ASSIGNEE THE PERCENTAGES OPPOSITE THEIR RESPECTIVE NAME;ASSIGNOR:CODE-A-PHONE CORPORATION, A CORP. DE;REEL/FRAME:005136/0610 Effective date: 19871231 |