TW336334B - Aperture for charged beam plotter and method of manufacturing thereof - Google Patents

Aperture for charged beam plotter and method of manufacturing thereof

Info

Publication number
TW336334B
TW336334B TW086112734A TW86112734A TW336334B TW 336334 B TW336334 B TW 336334B TW 086112734 A TW086112734 A TW 086112734A TW 86112734 A TW86112734 A TW 86112734A TW 336334 B TW336334 B TW 336334B
Authority
TW
Taiwan
Prior art keywords
aperture
manufacturing
charged beam
plotter
beam plotter
Prior art date
Application number
TW086112734A
Other languages
English (en)
Inventor
Katsushi Itou
Original Assignee
Nippon Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co filed Critical Nippon Electric Co
Application granted granted Critical
Publication of TW336334B publication Critical patent/TW336334B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/045—Diaphragms
    • H01J2237/0451—Diaphragms with fixed aperture
    • H01J2237/0453—Diaphragms with fixed aperture multiple apertures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24273—Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24273—Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture
    • Y10T428/24322—Composite web or sheet
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24273—Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture
    • Y10T428/24322—Composite web or sheet
    • Y10T428/24331—Composite web or sheet including nonapertured component

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
TW086112734A 1996-09-04 1997-09-04 Aperture for charged beam plotter and method of manufacturing thereof TW336334B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23451796A JP2904145B2 (ja) 1996-09-04 1996-09-04 荷電ビーム描画装置用アパチャおよびその製造方法

Publications (1)

Publication Number Publication Date
TW336334B true TW336334B (en) 1998-07-11

Family

ID=16972271

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086112734A TW336334B (en) 1996-09-04 1997-09-04 Aperture for charged beam plotter and method of manufacturing thereof

Country Status (4)

Country Link
US (1) US6296925B1 (zh)
JP (1) JP2904145B2 (zh)
KR (1) KR100282541B1 (zh)
TW (1) TW336334B (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1196175C (zh) 2000-05-25 2005-04-06 凸版印刷株式会社 转印掩模的制造方法
US6372391B1 (en) * 2000-09-25 2002-04-16 The University Of Houston Template mask lithography utilizing structured beam
US20040104454A1 (en) * 2002-10-10 2004-06-03 Rohm Co., Ltd. Semiconductor device and method of producing the same
JP2004207572A (ja) * 2002-12-26 2004-07-22 Toshiba Corp ステンシルマスク及びマスク形成用基板並びにステンシルマスクの製造方法及びマスク形成用基板の製造方法
JP4582299B2 (ja) * 2004-07-09 2010-11-17 凸版印刷株式会社 ステンシルマスクの製造方法
JP4648134B2 (ja) * 2005-09-02 2011-03-09 大日本印刷株式会社 Ｓｏｉ基板、荷電粒子線露光用マスクブランクスおよび荷電粒子線露光用マスク

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4022927A (en) * 1975-06-30 1977-05-10 International Business Machines Corporation Methods for forming thick self-supporting masks
JP2606138B2 (ja) * 1994-06-02 1997-04-30 日本電気株式会社 電子ビーム描画装置用アパチャ
JP2792453B2 (ja) * 1995-01-13 1998-09-03 日本電気株式会社 アパーチャ及びその製造方法
JPH0934103A (ja) * 1995-05-17 1997-02-07 Nikon Corp 荷電粒子線転写用マスク
JP3193863B2 (ja) * 1996-01-31 2001-07-30 ホーヤ株式会社 転写マスクの製造方法
JPH10135103A (ja) * 1996-10-25 1998-05-22 Nikon Corp 荷電粒子線転写用マスクまたはｘ線転写用マスクの製造方法
DE19710799A1 (de) * 1997-03-17 1998-10-01 Ibm Membranmaske für Belichtungsverfahren mit kurzwelliger Strahlung
US5942760A (en) * 1997-11-03 1999-08-24 Motorola Inc. Method of forming a semiconductor device utilizing scalpel mask, and mask therefor

Also Published As

Publication number Publication date
JPH1078650A (ja) 1998-03-24
KR100282541B1 (ko) 2001-04-02
US6296925B1 (en) 2001-10-02
JP2904145B2 (ja) 1999-06-14
KR19980024346A (ko) 1998-07-06

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Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent