TW330303B - Manufacturing method of bonding SOI substrate and bonding SOI substrate - Google Patents

Manufacturing method of bonding SOI substrate and bonding SOI substrate

Info

Publication number
TW330303B
TW330303B TW084113188A TW84113188A TW330303B TW 330303 B TW330303 B TW 330303B TW 084113188 A TW084113188 A TW 084113188A TW 84113188 A TW84113188 A TW 84113188A TW 330303 B TW330303 B TW 330303B
Authority
TW
Taiwan
Prior art keywords
soi substrate
bonding soi
manufacturing
bonding
dislocation
Prior art date
Application number
TW084113188A
Other languages
English (en)
Inventor
Mitsuo Kawano
Junsuke Tomioka
Original Assignee
Komatsu Denshi Kinzoku Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Komatsu Denshi Kinzoku Kk filed Critical Komatsu Denshi Kinzoku Kk
Application granted granted Critical
Publication of TW330303B publication Critical patent/TW330303B/zh

Links

Landscapes

  • Mechanical Treatment Of Semiconductor (AREA)
  • Element Separation (AREA)
TW084113188A 1994-07-15 1995-12-11 Manufacturing method of bonding SOI substrate and bonding SOI substrate TW330303B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18651694A JPH0832038A (ja) 1994-07-15 1994-07-15 貼り合わせｓｏｉ基板の製造方法および貼り合わせｓｏｉ基板

Publications (1)

Publication Number Publication Date
TW330303B true TW330303B (en) 1998-04-21

Family

ID=16189870

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084113188A TW330303B (en) 1994-07-15 1995-12-11 Manufacturing method of bonding SOI substrate and bonding SOI substrate

Country Status (2)

Country Link
JP (1) JPH0832038A (zh)
TW (1) TW330303B (zh)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10311354A (ja) * 1997-05-12 1998-11-24 Sumitomo Electric Ind Ltd 車両ブレーキ用制振装置
JPH1187200A (ja) * 1997-09-05 1999-03-30 Toshiba Corp 半導体基板及び半導体装置の製造方法
US6388290B1 (en) * 1998-06-10 2002-05-14 Agere Systems Guardian Corp. Single crystal silicon on polycrystalline silicon integrated circuits
JP3936987B2 (ja) * 1998-07-30 2007-06-27 Ｄｏｗａエレクトロニクス株式会社 被処理体の処理方法
DE10014650A1 (de) * 2000-03-24 2001-10-04 Wacker Siltronic Halbleitermat Halbleiterscheibe aus Silicium und Verfahren zur Herstellung der Halbleiterscheibe
JP3785067B2 (ja) * 2001-08-22 2006-06-14 株式会社東芝 半導体素子の製造方法
JP4182323B2 (ja) * 2002-02-27 2008-11-19 ソニー株式会社 複合基板、基板製造方法
JP4103447B2 (ja) * 2002-04-30 2008-06-18 株式会社Ｉｈｉ 大面積単結晶シリコン基板の製造方法
US7807520B2 (en) * 2007-06-29 2010-10-05 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8431451B2 (en) * 2007-06-29 2013-04-30 Semicondutor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
TW200914653A (en) * 2007-08-24 2009-04-01 Sumco Corp Semiconductor wafer and its manufacturing method
CN101504930B (zh) * 2008-02-06 2013-10-16 株式会社半导体能源研究所 Soi衬底的制造方法
JP2010087345A (ja) * 2008-10-01 2010-04-15 Semiconductor Energy Lab Co Ltd 半導体基板の作製方法
JP6802966B2 (ja) * 2014-12-17 2020-12-23 日本電気硝子株式会社 支持ガラス基板及びこれを用いた積層体

Also Published As

Publication number Publication date
JPH0832038A (ja) 1996-02-02

Similar Documents

Publication Publication Date Title
TW330303B (en) Manufacturing method of bonding SOI substrate and bonding SOI substrate
EP0635879A3 (en) Semiconductor silicon wafer and process for its production.
TW350143B (en) Method for producing semiconductor device
TW330306B (en) A semiconductor substrate and its fabrication method
AU1670597A (en) Cerium oxide abrasive, semiconductor chip, semiconductor device, process for the production of them, and method for the polishing of substrates
EP0553852A3 (en) Process for producing semiconductor substrate
EP1405333A4 (en) APPARATUS AND METHOD FOR MANUFACTURING NON-SLIDING TRENCH DOOR NACELLE
AU1683899A (en) Abrasive, method of polishing wafer, and method of producing semiconductor device
MY114349A (en) Etching solution for etching porous silicon, etching method using the etching solution and method of prepa- ring semiconductor member using the etching solution
NO882812L (no) Temperatur-resistente slipelegemer av polykrystallinsk diamant.
EP0250153A3 (en) Silicon nitride sintered bodies and process for manufacturing the same
EP1035235A4 (en) METHOD FOR PRODUCING SILICON SINGLE CRYSTAL WAFERS AND SILICON SINGLE CRYSTAL WAFERS
EP0663689A3 (en) Diffusion process for integrated circuits
EP0589411A3 (en) Sintered body made of silicon nitride and process for its production.
EP0559986A3 (en) Method for producing semiconductor wafer and substrate used for producing the semiconductor
EP0875607A4 (en) SILICON SINGLE CRYSTAL, WITHOUT DEFECT OF CRYSTAL IN THE PERIPHERAL PART OF THE WAFER, AND PROCESS FOR PRODUCING SAME
EP0846667A3 (en) Ceramic parts and a producing process thereof
EP1087040A4 (en) APPARATUS AND METHOD FOR PRODUCING A SINGLE CRYSTAL OF SILICON, SINGLE CRYSTAL, AND WAFER OBTAINED BY THIS METHOD
EP1020546A4 (en) QUARTZ-GLASS-POT FOR DRAWING SILICON MONOCRYSTALS AND METHOD FOR THE PRODUCTION THEREOF
AU2045188A (en) Crystal article, method for producing the same and semiconductor device utilizing the same
EP1154049A4 (en) PROCESS FOR THE PRODUCTION OF MONOCRYSTAL SILICON CARBIDE
TW331017B (en) Manufacturing and checking method of semiconductor substrate
EP0177894A3 (en) Method of producing metallic silicon particularly for use in the photovoltaic industry
EP1074643A4 (en) CRYSTAL SILICON WAFERS WITH LITTLE CRYSTAL DEFECTS AND METHOD FOR THE PRODUCTION THEREOF
EP0553854A3 (en) Semiconductor wafer, and process for production thereof

Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent