TW330303B - Manufacturing method of bonding SOI substrate and bonding SOI substrate - Google Patents
Manufacturing method of bonding SOI substrate and bonding SOI substrateInfo
- Publication number
- TW330303B TW330303B TW084113188A TW84113188A TW330303B TW 330303 B TW330303 B TW 330303B TW 084113188 A TW084113188 A TW 084113188A TW 84113188 A TW84113188 A TW 84113188A TW 330303 B TW330303 B TW 330303B
- Authority
- TW
- Taiwan
- Prior art keywords
- soi substrate
- bonding soi
- manufacturing
- bonding
- dislocation
- Prior art date
Links
Landscapes
- Mechanical Treatment Of Semiconductor (AREA)
- Element Separation (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18651694A JPH0832038A (ja) | 1994-07-15 | 1994-07-15 | 貼り合わせsoi基板の製造方法および貼り合わせsoi基板 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW330303B true TW330303B (en) | 1998-04-21 |
Family
ID=16189870
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW084113188A TW330303B (en) | 1994-07-15 | 1995-12-11 | Manufacturing method of bonding SOI substrate and bonding SOI substrate |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPH0832038A (zh) |
TW (1) | TW330303B (zh) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10311354A (ja) * | 1997-05-12 | 1998-11-24 | Sumitomo Electric Ind Ltd | 車両ブレーキ用制振装置 |
JPH1187200A (ja) * | 1997-09-05 | 1999-03-30 | Toshiba Corp | 半導体基板及び半導体装置の製造方法 |
US6388290B1 (en) * | 1998-06-10 | 2002-05-14 | Agere Systems Guardian Corp. | Single crystal silicon on polycrystalline silicon integrated circuits |
JP3936987B2 (ja) * | 1998-07-30 | 2007-06-27 | Dowaエレクトロニクス株式会社 | 被処理体の処理方法 |
DE10014650A1 (de) * | 2000-03-24 | 2001-10-04 | Wacker Siltronic Halbleitermat | Halbleiterscheibe aus Silicium und Verfahren zur Herstellung der Halbleiterscheibe |
JP3785067B2 (ja) * | 2001-08-22 | 2006-06-14 | 株式会社東芝 | 半導体素子の製造方法 |
JP4182323B2 (ja) * | 2002-02-27 | 2008-11-19 | ソニー株式会社 | 複合基板、基板製造方法 |
JP4103447B2 (ja) * | 2002-04-30 | 2008-06-18 | 株式会社Ihi | 大面積単結晶シリコン基板の製造方法 |
US7807520B2 (en) * | 2007-06-29 | 2010-10-05 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US8431451B2 (en) * | 2007-06-29 | 2013-04-30 | Semicondutor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
TW200914653A (en) * | 2007-08-24 | 2009-04-01 | Sumco Corp | Semiconductor wafer and its manufacturing method |
CN101504930B (zh) * | 2008-02-06 | 2013-10-16 | 株式会社半导体能源研究所 | Soi衬底的制造方法 |
JP2010087345A (ja) * | 2008-10-01 | 2010-04-15 | Semiconductor Energy Lab Co Ltd | 半導体基板の作製方法 |
JP6802966B2 (ja) * | 2014-12-17 | 2020-12-23 | 日本電気硝子株式会社 | 支持ガラス基板及びこれを用いた積層体 |
-
1994
- 1994-07-15 JP JP18651694A patent/JPH0832038A/ja active Pending
-
1995
- 1995-12-11 TW TW084113188A patent/TW330303B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JPH0832038A (ja) | 1996-02-02 |
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Legal Events
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MK4A | Expiration of patent term of an invention patent |