TW328618B - A method for isolating an active region of an MOS semiconductor device using a planarized refill layer which is not substantially overpolished and an MOS device fabricated thereby - Google Patents

A method for isolating an active region of an MOS semiconductor device using a planarized refill layer which is not substantially overpolished and an MOS device fabricated thereby

Info

Publication number
TW328618B
TW328618B TW086103545A TW86103545A TW328618B TW 328618 B TW328618 B TW 328618B TW 086103545 A TW086103545 A TW 086103545A TW 86103545 A TW86103545 A TW 86103545A TW 328618 B TW328618 B TW 328618B
Authority
TW
Taiwan
Prior art keywords
mos
isolating
active region
overpolished
planarized
Prior art date
Application number
TW086103545A
Other languages
English (en)
Inventor
Chatterjee Amitava
W Houston Theodore
Chen Ih-Chin
L Esquivel Agerico
Nag Somnath
Ali Iqbal
A Joyner Keith
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of TW328618B publication Critical patent/TW328618B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76229—Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/05—Etch and refill

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
TW086103545A 1996-02-21 1997-03-21 A method for isolating an active region of an MOS semiconductor device using a planarized refill layer which is not substantially overpolished and an MOS device fabricated thereby TW328618B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US1198896P 1996-02-21 1996-02-21

Publications (1)

Publication Number Publication Date
TW328618B true TW328618B (en) 1998-03-21

Family

ID=21752842

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086103545A TW328618B (en) 1996-02-21 1997-03-21 A method for isolating an active region of an MOS semiconductor device using a planarized refill layer which is not substantially overpolished and an MOS device fabricated thereby

Country Status (5)

Country Link
US (1) US5909628A (zh)
EP (1) EP0813239A1 (zh)
JP (1) JPH09232417A (zh)
KR (1) KR100510232B1 (zh)
TW (1) TW328618B (zh)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6140691A (en) * 1997-12-19 2000-10-31 Advanced Micro Devices, Inc. Trench isolation structure having a low K dielectric material isolated from a silicon-based substrate
US5882983A (en) * 1997-12-19 1999-03-16 Advanced Micro Devices, Inc. Trench isolation structure partially bound between a pair of low K dielectric structures
US6008109A (en) * 1997-12-19 1999-12-28 Advanced Micro Devices, Inc. Trench isolation structure having a low K dielectric encapsulated by oxide
EP0939432A1 (de) * 1998-02-17 1999-09-01 Siemens Aktiengesellschaft Verfahren zum Entwurf einer Maske zur Herstellung eines Dummygebiets in einem Isolationsgrabengebiet zwischen elektrisch aktiven Gebieten einer mikroelektronischen Vorrichtung
JPH11289094A (ja) * 1998-04-04 1999-10-19 Toshiba Corp 半導体装置及びその製造方法
US6121078A (en) * 1998-09-17 2000-09-19 International Business Machines Corporation Integrated circuit planarization and fill biasing design method
US6471735B1 (en) 1999-08-17 2002-10-29 Air Liquide America Corporation Compositions for use in a chemical-mechanical planarization process
KR20010063432A (ko) * 1999-12-22 2001-07-09 박종섭 반도체 소자의 정렬자 형성방법
US6559055B2 (en) 2000-08-15 2003-05-06 Mosel Vitelic, Inc. Dummy structures that protect circuit elements during polishing
US6355524B1 (en) 2000-08-15 2002-03-12 Mosel Vitelic, Inc. Nonvolatile memory structures and fabrication methods
US6358816B1 (en) 2000-09-05 2002-03-19 Motorola, Inc. Method for uniform polish in microelectronic device
US20050090073A1 (en) * 2000-12-20 2005-04-28 Actel Corporation, A California Corporation MOS transistor having improved total radiation-induced leakage current
US20050090047A1 (en) * 2000-12-20 2005-04-28 Actel Corporation, A California Corporation. Method of making a MOS transistor having improved total radiation-induced leakage current
TW567575B (en) * 2001-03-29 2003-12-21 Toshiba Corp Fabrication method of semiconductor device and semiconductor device
US8158527B2 (en) * 2001-04-20 2012-04-17 Kabushiki Kaisha Toshiba Semiconductor device fabrication method using multiple resist patterns
US6821847B2 (en) * 2001-10-02 2004-11-23 Mosel Vitelic, Inc. Nonvolatile memory structures and fabrication methods
US7092205B1 (en) 2002-10-29 2006-08-15 Seagate Technology Llc Isolated transducer portions in magnetic heads
US20050233540A1 (en) * 2004-04-15 2005-10-20 Texas Instruments, Incorporated Minimizing transistor variations due to shallow trench isolation stress
US7271431B2 (en) * 2004-06-25 2007-09-18 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit structure and method of fabrication
US7446039B2 (en) * 2006-01-25 2008-11-04 Chartered Semiconductor Manufacturing Ltd. Integrated circuit system with dummy region
JP2007250705A (ja) * 2006-03-15 2007-09-27 Nec Electronics Corp 半導体集積回路装置及びダミーパターンの配置方法
FR2923914B1 (fr) 2007-11-21 2010-01-08 Commissariat Energie Atomique Dispositif pour mesures d'epaisseur et de resistivite carree de lignes d'interconnexions
JP5193582B2 (ja) 2007-12-12 2013-05-08 株式会社東芝 半導体装置の製造方法
US8551886B2 (en) * 2007-12-28 2013-10-08 Texas Instruments Incorporated CMP process for processing STI on two distinct silicon planes
KR102282136B1 (ko) 2017-07-07 2021-07-27 삼성전자주식회사 반도체 장치

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4836885A (en) * 1988-05-03 1989-06-06 International Business Machines Corporation Planarization process for wide trench isolation
US5234861A (en) * 1989-06-30 1993-08-10 Honeywell Inc. Method for forming variable width isolation structures
US5292689A (en) * 1992-09-04 1994-03-08 International Business Machines Corporation Method for planarizing semiconductor structure using subminimum features
US5264387A (en) * 1992-10-27 1993-11-23 International Business Machines Corporation Method of forming uniformly thin, isolated silicon mesas on an insulating substrate
US5426070A (en) * 1993-05-26 1995-06-20 Cornell Research Foundation, Inc. Microstructures and high temperature isolation process for fabrication thereof
US5372968A (en) * 1993-09-27 1994-12-13 United Microelectronics Corporation Planarized local oxidation by trench-around technology
US5308786A (en) * 1993-09-27 1994-05-03 United Microelectronics Corporation Trench isolation for both large and small areas by means of silicon nodules after metal etching
US5516720A (en) * 1994-02-14 1996-05-14 United Microelectronics Corporation Stress relaxation in dielectric before metallization
US5374583A (en) * 1994-05-24 1994-12-20 United Microelectronic Corporation Technology for local oxidation of silicon
US6069081A (en) * 1995-04-28 2000-05-30 International Buiness Machines Corporation Two-step chemical mechanical polish surface planarization technique
KR100190048B1 (ko) * 1996-06-25 1999-06-01 윤종용 반도체 소자의 소자 분리 방법
US5691230A (en) * 1996-09-04 1997-11-25 Micron Technology, Inc. Technique for producing small islands of silicon on insulator

Also Published As

Publication number Publication date
EP0813239A1 (en) 1997-12-17
KR970063522A (ko) 1997-09-12
US5909628A (en) 1999-06-01
KR100510232B1 (ko) 2005-10-27
JPH09232417A (ja) 1997-09-05

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees