TW328139B - Pulsed plate plasma implantation system - Google Patents

Pulsed plate plasma implantation system

Info

Publication number
TW328139B
TW328139B TW086104147A TW86104147A TW328139B TW 328139 B TW328139 B TW 328139B TW 086104147 A TW086104147 A TW 086104147A TW 86104147 A TW86104147 A TW 86104147A TW 328139 B TW328139 B TW 328139B
Authority
TW
Taiwan
Prior art keywords
chamber
workpieces
gas
implantation system
plate plasma
Prior art date
Application number
TW086104147A
Other languages
English (en)
Inventor
Shao Jiqun
S Denholm Alex
Original Assignee
Eaton Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US08/728,000 external-priority patent/US5654043A/en
Application filed by Eaton Corp filed Critical Eaton Corp
Application granted granted Critical
Publication of TW328139B publication Critical patent/TW328139B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
TW086104147A 1996-10-10 1997-04-01 Pulsed plate plasma implantation system TW328139B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/728,000 US5654043A (en) 1996-10-10 1996-10-10 Pulsed plate plasma implantation system and method

Publications (1)

Publication Number Publication Date
TW328139B true TW328139B (en) 1998-03-11

Family

ID=24925020

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086104147A TW328139B (en) 1996-10-10 1997-04-01 Pulsed plate plasma implantation system

Country Status (4)

Country Link
KR (1) KR19980032745A (zh)
DE (1) DE69735986D1 (zh)
SG (1) SG101917A1 (zh)
TW (1) TW328139B (zh)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6091629A (ja) * 1983-10-25 1985-05-23 Nec Corp プラズマ気相成長装置
JPH01185918A (ja) * 1988-01-21 1989-07-25 Fuji Electric Co Ltd 半導体基体への不純物導入装置
JPH0536620A (ja) * 1991-07-25 1993-02-12 Canon Inc 半導体表面処理方法及び装置
US5572038A (en) * 1993-05-07 1996-11-05 Varian Associates, Inc. Charge monitor for high potential pulse current dose measurement apparatus and method
JPH0786603A (ja) * 1993-09-16 1995-03-31 Sharp Corp 半導体膜の製造方法
KR0137704B1 (ko) * 1994-11-25 1998-06-01 김은영 이중 모드 플라즈마 이온 주입 장치 및 이를 사용한 표면 개질 방법

Also Published As

Publication number Publication date
KR19980032745A (ko) 1998-07-25
DE69735986D1 (de) 2006-07-06
SG101917A1 (en) 2004-02-27

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees