TW325606B - Amplifier circuit and multistage amplifier circuit - Google Patents

Amplifier circuit and multistage amplifier circuit

Info

Publication number
TW325606B
TW325606B TW086102591A TW86102591A TW325606B TW 325606 B TW325606 B TW 325606B TW 086102591 A TW086102591 A TW 086102591A TW 86102591 A TW86102591 A TW 86102591A TW 325606 B TW325606 B TW 325606B
Authority
TW
Taiwan
Prior art keywords
amplifier circuit
drain
fet
multistage
supplied
Prior art date
Application number
TW086102591A
Other languages
English (en)
Inventor
Takahisa Kawaai
Itsuo Okamoto
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of TW325606B publication Critical patent/TW325606B/zh

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H03F3/1935—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices with junction-FET devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/306—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in junction-FET amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0017—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0017—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier
    • H03G1/0029—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier using FETs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0035—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements
    • H03G1/007—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements using FET type devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/15—Indexing scheme relating to amplifiers the supply or bias voltage or current at the drain side of a FET being continuously controlled by a controlling signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/18—Indexing scheme relating to amplifiers the bias of the gate of a FET being controlled by a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/211—Indexing scheme relating to amplifiers the input of an amplifier can be attenuated by a continuously controlled transistor attenuator
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/405—Indexing scheme relating to amplifiers the output amplifying stage of an amplifier comprising more than three power stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/54—Two or more capacitor coupled amplifier stages in cascade
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/75—Indexing scheme relating to amplifiers the amplifier stage being a common source configuration MOSFET

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
TW086102591A 1996-07-12 1997-03-04 Amplifier circuit and multistage amplifier circuit TW325606B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18291596A JP3508401B2 (ja) 1996-07-12 1996-07-12 増幅回路および多段増幅回路

Publications (1)

Publication Number Publication Date
TW325606B true TW325606B (en) 1998-01-21

Family

ID=16126617

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086102591A TW325606B (en) 1996-07-12 1997-03-04 Amplifier circuit and multistage amplifier circuit

Country Status (7)

Country Link
US (1) US5994963A (zh)
EP (2) EP0818879B1 (zh)
JP (1) JP3508401B2 (zh)
KR (1) KR100302685B1 (zh)
CN (1) CN1090839C (zh)
DE (2) DE69738890D1 (zh)
TW (1) TW325606B (zh)

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FR2763183A1 (fr) * 1997-05-07 1998-11-13 Philips Electronics Nv Dispositif incluant un circuit amplificateur large-bande
JP2000223960A (ja) * 1999-02-01 2000-08-11 Fujitsu Ltd 歪み補償器
US6097253A (en) * 1999-02-12 2000-08-01 Pmc-Sierra Ltd. High speed process-controlled transresistance amplifier
US6784837B2 (en) * 2000-04-07 2004-08-31 Chief Controller, Research And Development Ministry Of Defence, Government Of India Transmit/receiver module for active phased array antenna
US6549071B1 (en) * 2000-09-12 2003-04-15 Silicon Laboratories, Inc. Power amplifier circuitry and method using an inductance coupled to power amplifier switching devices
US6323731B1 (en) * 2000-10-06 2001-11-27 Tropion, Inc. Corp. Variable bias control for switch mode RF amplifier
JP2002151982A (ja) 2000-11-15 2002-05-24 Hitachi Ltd 高周波電力増幅回路及び無線通信機並びに無線通信システム
DE10123395A1 (de) * 2001-05-14 2002-11-28 Infineon Technologies Ag Schaltungsanordnung mit kaskadierten Feldeffekttransistoren
US6701138B2 (en) * 2001-06-11 2004-03-02 Rf Micro Devices, Inc. Power amplifier control
US6647172B2 (en) 2001-06-29 2003-11-11 Lucent Technologies Inc. Imaging technique for use with optical MEMS devices
JP2003037454A (ja) 2001-07-23 2003-02-07 Hitachi Ltd 高周波電力増幅回路
US6724252B2 (en) * 2002-02-21 2004-04-20 Rf Micro Devices, Inc. Switched gain amplifier circuit
US6701134B1 (en) 2002-11-05 2004-03-02 Rf Micro Devices, Inc. Increased dynamic range for power amplifiers used with polar modulation
US7177370B2 (en) 2003-12-17 2007-02-13 Triquint Semiconductor, Inc. Method and architecture for dual-mode linear and saturated power amplifier operation
US7109791B1 (en) 2004-07-09 2006-09-19 Rf Micro Devices, Inc. Tailored collector voltage to minimize variation in AM to PM distortion in a power amplifier
JP4583967B2 (ja) * 2005-02-23 2010-11-17 パナソニック株式会社 高周波電力増幅器及びその出力電力調整方法
JP4650026B2 (ja) * 2005-03-01 2011-03-16 日本電気株式会社 電力増幅器
US7336127B2 (en) * 2005-06-10 2008-02-26 Rf Micro Devices, Inc. Doherty amplifier configuration for a collector controlled power amplifier
US7330071B1 (en) 2005-10-19 2008-02-12 Rf Micro Devices, Inc. High efficiency radio frequency power amplifier having an extended dynamic range
EP2045915A1 (en) * 2007-10-03 2009-04-08 Seiko Epson Corporation Low noise amplifier and mixer front-end circuit and method for gain control
FR2942681B1 (fr) * 2009-02-27 2011-05-13 Commissariat Energie Atomique Dispositif resonant micrometrique ou nanometrique a transistors
US8666339B2 (en) * 2012-03-29 2014-03-04 Triquint Semiconductor, Inc. Radio frequency power amplifier with low dynamic error vector magnitude
DE102015107655B4 (de) * 2015-05-15 2019-06-13 Brandenburgische Technische Universität Cottbus-Senftenberg Elektrischer Signalstärker, Schaltkreisanordnung sowie Verfahren zum Verstärken eines elektrischen Signals
CN110365207B (zh) * 2018-04-10 2020-10-09 中芯国际集成电路制造(上海)有限公司 放大电路
US10769511B2 (en) * 2019-01-03 2020-09-08 Wiliot, Ltd Low energy transmitter
WO2023150714A2 (en) * 2022-02-04 2023-08-10 ChargeStar, Inc. High voltage multipliers

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4015219A (en) * 1974-01-16 1977-03-29 Hitachi, Ltd. Electronic circuit using field effect transistor with compensation means
US3913026A (en) * 1974-04-08 1975-10-14 Bulova Watch Co Inc Mos transistor gain block
US4255716A (en) * 1977-09-10 1981-03-10 Tokyo Shibaura Denki Kabushiki Kaisha Automatic gain control circuit
FR2558659B1 (fr) * 1984-01-20 1986-04-25 Thomson Csf Circuit de polarisation d'un transistor a effet de champ
US4672327A (en) * 1986-03-10 1987-06-09 Rca Corporation Self-biasing for enhancement-mode field effect transistors
US4701646A (en) * 1986-11-18 1987-10-20 Northern Telecom Limited Direct coupled FET logic using a photodiode for biasing or level-shifting
FR2623951B1 (fr) * 1987-11-27 1990-03-09 Thomson Hybrides Microondes Amplificateur lineaire hyperfrequence a tres large bande passante
DE3814041A1 (de) * 1988-04-26 1989-11-09 Standard Elektrik Lorenz Ag Steuerbarer wechselspannungsverstaerker
TW198152B (zh) * 1990-10-18 1993-01-11 Hitachi Seisakusyo Kk
JPH05267585A (ja) * 1992-03-19 1993-10-15 Mitsubishi Electric Corp 増幅器
JPH0851318A (ja) * 1994-08-08 1996-02-20 Oki Electric Ind Co Ltd 利得可変回路とその集積回路

Also Published As

Publication number Publication date
EP1387486A2 (en) 2004-02-04
KR980012845A (ko) 1998-04-30
EP1387486B1 (en) 2008-08-06
JP3508401B2 (ja) 2004-03-22
EP0818879B1 (en) 2003-11-12
US5994963A (en) 1999-11-30
KR100302685B1 (ko) 2001-09-22
DE69726058T2 (de) 2004-08-26
EP0818879A2 (en) 1998-01-14
DE69726058D1 (de) 2003-12-18
DE69738890D1 (de) 2008-09-18
CN1170988A (zh) 1998-01-21
EP1387486A3 (en) 2005-11-23
CN1090839C (zh) 2002-09-11
JPH1028020A (ja) 1998-01-27
EP0818879A3 (en) 1999-04-07

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees