TW325598B - Electrically programmable memory cell arrangement and method for its production - Google Patents
Electrically programmable memory cell arrangement and method for its productionInfo
- Publication number
- TW325598B TW325598B TW085115623A TW85115623A TW325598B TW 325598 B TW325598 B TW 325598B TW 085115623 A TW085115623 A TW 085115623A TW 85115623 A TW85115623 A TW 85115623A TW 325598 B TW325598 B TW 325598B
- Authority
- TW
- Taiwan
- Prior art keywords
- memory cell
- rows
- electrically programmable
- cell arrangement
- programmable memory
- Prior art date
Links
- 238000009413 insulation Methods 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 230000004888 barrier function Effects 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19600422A DE19600422C1 (de) | 1996-01-08 | 1996-01-08 | Elektrisch programmierbare Speicherzellenanordnung und Verfahren zu deren Herstellung |
Publications (1)
Publication Number | Publication Date |
---|---|
TW325598B true TW325598B (en) | 1998-01-21 |
Family
ID=7782302
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW085115623A TW325598B (en) | 1996-01-08 | 1996-12-18 | Electrically programmable memory cell arrangement and method for its production |
Country Status (6)
Country | Link |
---|---|
US (1) | US5959328A (zh) |
EP (1) | EP0783180B1 (zh) |
JP (1) | JPH09199697A (zh) |
KR (1) | KR970060503A (zh) |
DE (2) | DE19600422C1 (zh) |
TW (1) | TW325598B (zh) |
Families Citing this family (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19652547C2 (de) | 1996-12-17 | 2002-04-25 | Infineon Technologies Ag | Speicherzellenanordnung mit Grabenstruktur und einem Gatedielektrikum, das ein Material mit Ladungsträger-Haftstellen enthält, und Verfahren zu deren Herstellung |
FR2767219B1 (fr) * | 1997-08-08 | 1999-09-17 | Commissariat Energie Atomique | Dispositif memoire non volatile programmable et effacable electriquement compatible avec un procede de fabrication cmos/soi |
EP1068645B1 (de) * | 1998-03-24 | 2014-05-07 | Infineon Technologies AG | Speicherzellenanordnung und verfahren zu ihrer herstellung |
US6255155B1 (en) * | 1998-04-23 | 2001-07-03 | Hyundai Electronics Industries Co., Ltd. | Nonvolatile memory and method for fabricating the same |
TW395055B (en) * | 1998-06-22 | 2000-06-21 | United Microelectronics Corp | Structure of read-only memory and the manufacturing method thereof |
US6204529B1 (en) * | 1999-08-27 | 2001-03-20 | Hsing Lan Lung | 8 bit per cell non-volatile semiconductor memory structure utilizing trench technology and dielectric floating gate |
JP4730999B2 (ja) | 2000-03-10 | 2011-07-20 | スパンション エルエルシー | 不揮発性メモリの製造方法 |
US6596617B1 (en) | 2000-06-22 | 2003-07-22 | Progressant Technologies, Inc. | CMOS compatible process for making a tunable negative differential resistance (NDR) device |
US6754104B2 (en) * | 2000-06-22 | 2004-06-22 | Progressant Technologies, Inc. | Insulated-gate field-effect transistor integrated with negative differential resistance (NDR) FET |
US6594193B2 (en) | 2000-06-22 | 2003-07-15 | Progressent Technologies, Inc. | Charge pump for negative differential resistance transistor |
US6479862B1 (en) | 2000-06-22 | 2002-11-12 | Progressant Technologies, Inc. | Charge trapping device and method for implementing a transistor having a negative differential resistance mode |
US6512274B1 (en) | 2000-06-22 | 2003-01-28 | Progressant Technologies, Inc. | CMOS-process compatible, tunable NDR (negative differential resistance) device and method of operating same |
US6518589B2 (en) | 2000-06-22 | 2003-02-11 | Progressant Technologies, Inc. | Dual mode FET & logic circuit having negative differential resistance mode |
US6559470B2 (en) | 2000-06-22 | 2003-05-06 | Progressed Technologies, Inc. | Negative differential resistance field effect transistor (NDR-FET) and circuits using the same |
US6724655B2 (en) | 2000-06-22 | 2004-04-20 | Progressant Technologies, Inc. | Memory cell using negative differential resistance field effect transistors |
EP1307920A2 (de) | 2000-08-11 | 2003-05-07 | Infineon Technologies AG | Speicherzelle, speicherzellenanordnung und herstellungsverfahren |
DE10039441A1 (de) * | 2000-08-11 | 2002-02-28 | Infineon Technologies Ag | Speicherzelle, Speicherzellenanordnung und Herstellungsverfahren |
JP2002170891A (ja) * | 2000-11-21 | 2002-06-14 | Halo Lsi Design & Device Technol Inc | デュアルビット多準位バリスティックmonosメモリの製造、プログラミング、および動作のプロセス |
JP2002261175A (ja) * | 2000-12-28 | 2002-09-13 | Sony Corp | 不揮発性半導体記憶装置およびその製造方法 |
GB0101695D0 (en) * | 2001-01-23 | 2001-03-07 | Koninkl Philips Electronics Nv | Manufacture of trench-gate semiconductor devices |
US6956262B1 (en) | 2001-12-21 | 2005-10-18 | Synopsys Inc. | Charge trapping pull up element |
US7453083B2 (en) * | 2001-12-21 | 2008-11-18 | Synopsys, Inc. | Negative differential resistance field effect transistor for implementing a pull up element in a memory cell |
US6912151B2 (en) * | 2002-06-28 | 2005-06-28 | Synopsys, Inc. | Negative differential resistance (NDR) based memory device with reduced body effects |
US7098472B2 (en) * | 2002-06-28 | 2006-08-29 | Progressant Technologies, Inc. | Negative differential resistance (NDR) elements and memory device using the same |
US6795337B2 (en) * | 2002-06-28 | 2004-09-21 | Progressant Technologies, Inc. | Negative differential resistance (NDR) elements and memory device using the same |
US7095659B2 (en) * | 2002-06-28 | 2006-08-22 | Progressant Technologies, Inc. | Variable voltage supply bias and methods for negative differential resistance (NDR) based memory device |
US6864104B2 (en) * | 2002-06-28 | 2005-03-08 | Progressant Technologies, Inc. | Silicon on insulator (SOI) negative differential resistance (NDR) based memory device with reduced body effects |
US6847562B2 (en) * | 2002-06-28 | 2005-01-25 | Progressant Technologies, Inc. | Enhanced read and write methods for negative differential resistance (NDR) based memory device |
US6567292B1 (en) | 2002-06-28 | 2003-05-20 | Progressant Technologies, Inc. | Negative differential resistance (NDR) element and memory with reduced soft error rate |
US6861707B1 (en) * | 2002-06-28 | 2005-03-01 | Progressant Technologies, Inc. | Negative differential resistance (NDR) memory cell with reduced soft error rate |
DE10241171A1 (de) * | 2002-09-05 | 2004-03-18 | Infineon Technologies Ag | Wort- und Bitleitungsanordnung für einen FINFET-Halbleiterspeicher |
US6806117B2 (en) * | 2002-12-09 | 2004-10-19 | Progressant Technologies, Inc. | Methods of testing/stressing a charge trapping device |
US6980467B2 (en) * | 2002-12-09 | 2005-12-27 | Progressant Technologies, Inc. | Method of forming a negative differential resistance device |
US7012833B2 (en) * | 2002-12-09 | 2006-03-14 | Progressant Technologies, Inc. | Integrated circuit having negative differential resistance (NDR) devices with varied peak-to-valley ratios (PVRs) |
US6979580B2 (en) | 2002-12-09 | 2005-12-27 | Progressant Technologies, Inc. | Process for controlling performance characteristics of a negative differential resistance (NDR) device |
US6812084B2 (en) * | 2002-12-09 | 2004-11-02 | Progressant Technologies, Inc. | Adaptive negative differential resistance device |
US6849483B2 (en) * | 2002-12-09 | 2005-02-01 | Progressant Technologies, Inc. | Charge trapping device and method of forming the same |
US7005711B2 (en) * | 2002-12-20 | 2006-02-28 | Progressant Technologies, Inc. | N-channel pull-up element and logic circuit |
US6963104B2 (en) * | 2003-06-12 | 2005-11-08 | Advanced Micro Devices, Inc. | Non-volatile memory device |
US6933558B2 (en) * | 2003-12-04 | 2005-08-23 | Advanced Micro Devices, Inc. | Flash memory device |
JP2007517386A (ja) * | 2003-12-19 | 2007-06-28 | インフィネオン テクノロジーズ アクチエンゲゼルシャフト | ブリッジ電界効果トランジスタメモリセル、上記セルを備えるデバイス、および、ブリッジ電界効果トランジスタメモリセルの製造方法 |
KR100540478B1 (ko) * | 2004-03-22 | 2006-01-11 | 주식회사 하이닉스반도체 | 전하 트랩을 갖는 게이트유전체를 포함한 휘발성 메모리셀 트랜지스터 및 그 제조 방법 |
KR100682899B1 (ko) * | 2004-11-10 | 2007-02-15 | 삼성전자주식회사 | 저항 변화층을 스토리지 노드로 구비하는 메모리 소자의제조 방법 |
JP2006196622A (ja) * | 2005-01-12 | 2006-07-27 | Nec Electronics Corp | 不揮発性半導体記憶装置及び不揮発性半導体記憶装置の製造方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4047974A (en) * | 1975-12-30 | 1977-09-13 | Hughes Aircraft Company | Process for fabricating non-volatile field effect semiconductor memory structure utilizing implanted ions to induce trapping states |
DE3032364C2 (de) * | 1980-08-28 | 1987-11-12 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Elektrisch programmierbarer Halbleiter-Festwertspeicher und Verfahren zu seiner Herstellung |
JPS61107762A (ja) * | 1984-10-31 | 1986-05-26 | Toshiba Corp | 半導体記憶装置の製造方法 |
JPH0715953B2 (ja) * | 1985-08-09 | 1995-02-22 | 株式会社リコー | 書換え可能なメモリ装置とその製造方法 |
JPH05102436A (ja) * | 1991-10-09 | 1993-04-23 | Ricoh Co Ltd | 半導体メモリ装置とその製造方法 |
JPH05326976A (ja) * | 1992-05-20 | 1993-12-10 | Rohm Co Ltd | 半導体記憶装置およびその製法 |
EP0655788B1 (en) * | 1993-11-29 | 1998-01-21 | STMicroelectronics S.A. | A volatile memory cell |
JPH07254651A (ja) * | 1994-03-16 | 1995-10-03 | Toshiba Corp | 半導体集積回路装置 |
US5467308A (en) * | 1994-04-05 | 1995-11-14 | Motorola Inc. | Cross-point eeprom memory array |
US5387534A (en) * | 1994-05-05 | 1995-02-07 | Micron Semiconductor, Inc. | Method of forming an array of non-volatile sonos memory cells and array of non-violatile sonos memory cells |
-
1996
- 1996-01-08 DE DE19600422A patent/DE19600422C1/de not_active Expired - Fee Related
- 1996-11-29 DE DE59611290T patent/DE59611290D1/de not_active Expired - Lifetime
- 1996-11-29 EP EP96119226A patent/EP0783180B1/de not_active Expired - Lifetime
- 1996-12-18 TW TW085115623A patent/TW325598B/zh active
-
1997
- 1997-01-06 JP JP9010090A patent/JPH09199697A/ja active Pending
- 1997-01-07 US US08/779,446 patent/US5959328A/en not_active Expired - Lifetime
- 1997-01-08 KR KR1019970000220A patent/KR970060503A/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
KR970060503A (ko) | 1997-08-12 |
US5959328A (en) | 1999-09-28 |
EP0783180B1 (de) | 2005-11-02 |
EP0783180A1 (de) | 1997-07-09 |
DE19600422C1 (de) | 1997-08-21 |
JPH09199697A (ja) | 1997-07-31 |
DE59611290D1 (de) | 2005-12-08 |
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