TW325579B - Fabrication method of MOS - Google Patents

Fabrication method of MOS

Info

Publication number
TW325579B
TW325579B TW086110631A TW86110631A TW325579B TW 325579 B TW325579 B TW 325579B TW 086110631 A TW086110631 A TW 086110631A TW 86110631 A TW86110631 A TW 86110631A TW 325579 B TW325579 B TW 325579B
Authority
TW
Taiwan
Prior art keywords
isolation layer
active device
device region
gate electrode
sidewall spacer
Prior art date
Application number
TW086110631A
Other languages
English (en)
Inventor
Wenn-Guan Yeh
Jinn-Lai Chen
Jyh-Wenn Jou
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW086110631A priority Critical patent/TW325579B/zh
Application granted granted Critical
Publication of TW325579B publication Critical patent/TW325579B/zh

Links

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
TW086110631A 1997-07-25 1997-07-25 Fabrication method of MOS TW325579B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW086110631A TW325579B (en) 1997-07-25 1997-07-25 Fabrication method of MOS

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW086110631A TW325579B (en) 1997-07-25 1997-07-25 Fabrication method of MOS

Publications (1)

Publication Number Publication Date
TW325579B true TW325579B (en) 1998-01-21

Family

ID=58262182

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086110631A TW325579B (en) 1997-07-25 1997-07-25 Fabrication method of MOS

Country Status (1)

Country Link
TW (1) TW325579B (zh)

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