TW324073B - Half-tone phase shift mask - Google Patents

Half-tone phase shift mask

Info

Publication number
TW324073B
TW324073B TW085116018A TW85116018A TW324073B TW 324073 B TW324073 B TW 324073B TW 085116018 A TW085116018 A TW 085116018A TW 85116018 A TW85116018 A TW 85116018A TW 324073 B TW324073 B TW 324073B
Authority
TW
Taiwan
Prior art keywords
phase shift
exposure light
shift mask
tone phase
shift pattern
Prior art date
Application number
TW085116018A
Other languages
English (en)
Inventor
Kim Hyoung-Joon
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of TW324073B publication Critical patent/TW324073B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
TW085116018A 1995-12-26 1996-12-24 Half-tone phase shift mask TW324073B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR19950056971 1995-12-26

Publications (1)

Publication Number Publication Date
TW324073B true TW324073B (en) 1998-01-01

Family

ID=19444578

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085116018A TW324073B (en) 1995-12-26 1996-12-24 Half-tone phase shift mask

Country Status (3)

Country Link
JP (1) JPH09222719A (zh)
KR (1) KR100219570B1 (zh)
TW (1) TW324073B (zh)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8715893B2 (en) 2010-03-18 2014-05-06 Micron Technology, Inc. Masks for use in lithography including image reversal assist features, lithography systems including such masks, and methods of forming such masks
TWI461833B (zh) * 2010-03-15 2014-11-21 Hoya Corp 多調式光罩、多調式光罩之製造方法及圖案轉印方法
TWI479257B (zh) * 2008-06-30 2015-04-01 Hoya Corp 光罩基板、光罩及其製造方法
TWI480675B (zh) * 2004-03-31 2015-04-11 Shinetsu Chemical Co 半色調相移空白光罩，半色調相移光罩，以及圖案轉移方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100355228B1 (ko) 2000-01-18 2002-10-11 삼성전자 주식회사 하프톤 위상반전 마스크 및 그 제조방법
KR100732757B1 (ko) * 2005-05-18 2007-06-27 주식회사 하이닉스반도체 독립된 패턴 형성을 위한 마스크 및 이를 이용한 독립된패턴 형성방법
JP5409238B2 (ja) * 2009-09-29 2014-02-05 Ｈｏｙａ株式会社 フォトマスク、フォトマスクの製造方法、パターン転写方法及び表示装置用画素電極の製造方法
KR101403391B1 (ko) * 2013-05-06 2014-06-03 주식회사 피케이엘 하프톤 위상반전마스크를 이용한 복합파장 노광 방법 및 이에 이용되는 하프톤 위상반전마스크
KR102337235B1 (ko) * 2019-08-05 2021-12-09 주식회사 포트로닉스 천안 하프톤 위상반전마스크 및 그 제조 방법

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI480675B (zh) * 2004-03-31 2015-04-11 Shinetsu Chemical Co 半色調相移空白光罩，半色調相移光罩，以及圖案轉移方法
TWI480676B (zh) * 2004-03-31 2015-04-11 Shinetsu Chemical Co 半色調相移空白光罩，半色調相移光罩，以及圖案轉移方法
TWI479257B (zh) * 2008-06-30 2015-04-01 Hoya Corp 光罩基板、光罩及其製造方法
TWI461833B (zh) * 2010-03-15 2014-11-21 Hoya Corp 多調式光罩、多調式光罩之製造方法及圖案轉印方法
US8715893B2 (en) 2010-03-18 2014-05-06 Micron Technology, Inc. Masks for use in lithography including image reversal assist features, lithography systems including such masks, and methods of forming such masks
TWI461834B (zh) * 2010-03-18 2014-11-21 Micron Technology Inc 包含影像反轉輔助特徵之微影蝕刻光罩，包含此等光罩之微影蝕刻系統及形成此等光罩之方法

Also Published As

Publication number Publication date
JPH09222719A (ja) 1997-08-26
KR100219570B1 (ko) 1999-09-01
KR970049088A (ko) 1997-07-29

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees