KR100219570B1 - 하프톤 위상 반전 마스크 및 그 제조방법 - Google Patents

하프톤 위상 반전 마스크 및 그 제조방법 Download PDF

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Publication number
KR100219570B1
KR100219570B1 KR1019960070946A KR19960070946A KR100219570B1 KR 100219570 B1 KR100219570 B1 KR 100219570B1 KR 1019960070946 A KR1019960070946 A KR 1019960070946A KR 19960070946 A KR19960070946 A KR 19960070946A KR 100219570 B1 KR100219570 B1 KR 100219570B1
Authority
KR
South Korea
Prior art keywords
phase shifter
pattern
phase
phase shift
exposure light
Prior art date
Application number
KR1019960070946A
Other languages
English (en)
Korean (ko)
Other versions
KR970049088A (ko
Inventor
김형준
Original Assignee
윤종용
삼성전자주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 윤종용, 삼성전자주식회사 filed Critical 윤종용
Publication of KR970049088A publication Critical patent/KR970049088A/ko
Application granted granted Critical
Publication of KR100219570B1 publication Critical patent/KR100219570B1/ko

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1019960070946A 1995-12-26 1996-12-24 하프톤 위상 반전 마스크 및 그 제조방법 KR100219570B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US08/567,630 1995-12-05
JP95-327002 1995-12-15
KR101995056971 1995-12-26
KR19950056971 1995-12-26
KR56971 1995-12-26
US08/579658 1995-12-27

Publications (2)

Publication Number Publication Date
KR970049088A KR970049088A (ko) 1997-07-29
KR100219570B1 true KR100219570B1 (ko) 1999-09-01

Family

ID=19444578

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960070946A KR100219570B1 (ko) 1995-12-26 1996-12-24 하프톤 위상 반전 마스크 및 그 제조방법

Country Status (3)

Country Link
JP (1) JPH09222719A (zh)
KR (1) KR100219570B1 (zh)
TW (1) TW324073B (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100355228B1 (ko) * 2000-01-18 2002-10-11 삼성전자 주식회사 하프톤 위상반전 마스크 및 그 제조방법
KR100732757B1 (ko) * 2005-05-18 2007-06-27 주식회사 하이닉스반도체 독립된 패턴 형성을 위한 마스크 및 이를 이용한 독립된패턴 형성방법
KR20210016813A (ko) * 2019-08-05 2021-02-17 주식회사 포트로닉스 천안 하프톤 위상반전마스크 및 그 제조 방법

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI348590B (en) * 2004-03-31 2011-09-11 Shinetsu Chemical Co Halftone phase shift mask blank, halftone phase shift mask, and pattern transfer method
JP5615488B2 (ja) * 2008-06-30 2014-10-29 Hoya株式会社 位相シフトマスクの製造方法
JP5409238B2 (ja) * 2009-09-29 2014-02-05 Ｈｏｙａ株式会社 フォトマスク、フォトマスクの製造方法、パターン転写方法及び表示装置用画素電極の製造方法
TWI461833B (zh) * 2010-03-15 2014-11-21 Hoya Corp 多調式光罩、多調式光罩之製造方法及圖案轉印方法
US8298729B2 (en) * 2010-03-18 2012-10-30 Micron Technology, Inc. Microlithography masks including image reversal assist features, microlithography systems including such masks, and methods of forming such masks
KR101403391B1 (ko) * 2013-05-06 2014-06-03 주식회사 피케이엘 하프톤 위상반전마스크를 이용한 복합파장 노광 방법 및 이에 이용되는 하프톤 위상반전마스크

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100355228B1 (ko) * 2000-01-18 2002-10-11 삼성전자 주식회사 하프톤 위상반전 마스크 및 그 제조방법
KR100732757B1 (ko) * 2005-05-18 2007-06-27 주식회사 하이닉스반도체 독립된 패턴 형성을 위한 마스크 및 이를 이용한 독립된패턴 형성방법
KR20210016813A (ko) * 2019-08-05 2021-02-17 주식회사 포트로닉스 천안 하프톤 위상반전마스크 및 그 제조 방법
KR102337235B1 (ko) 2019-08-05 2021-12-09 주식회사 포트로닉스 천안 하프톤 위상반전마스크 및 그 제조 방법

Also Published As

Publication number Publication date
TW324073B (en) 1998-01-01
JPH09222719A (ja) 1997-08-26
KR970049088A (ko) 1997-07-29

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